RENESAS BCR1AM-12A

BCR1AM-12A
Triac
Low Power Use
REJ03G1248-0200
Rev.2.00
Nov 30, 2007
Features
• IT (RMS) : 1 A
• VDRM : 600 V
• IFGTI , IRGTI, IRGT III : 7 mA
• Non-Insulated Type
• Planar Passivation Type
Outline
RENESAS Package code: PRSS0003EA-A
(Package name: TO-92)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
3
2
Applications
Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric
fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications
Maximum Ratings
Parameter
Symbol
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
REJ03G1248-0200
Page 1 of 4
Rev.2.00
Nov 30, 2007
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR1AM-12A
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
1.0
Unit
A
Surge on-state current
ITSM
10
A
I2 t
0.41
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
1
0.1
6
0.5
– 40 to +125
– 40 to +125
0.23
W
W
V
A
°C
°C
g
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 56°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Symbol
Repetitive peak off-state current
On-state voltage
IDRM
VTM
Rated value
Min.
Typ.
Max.
—
—
0.5
—
—
1.6
Unit
mA
V
Test conditions
Tj = 125°C, VDRM applied
Tc = 25°C, ITM = 1.5 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
2.0
2.0
2.0
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
—
—
—
0.1
—
—
—
—
—
—
7
7
7
—
50
mA
mA
mA
V
°C/W
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 125°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
2
—
—
V/µs
Tj = 125°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.5 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G1248-0200
Page 2 of 4
Rev.2.00
Nov 30, 2007
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR1AM-12A
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
A
6V
330 Ω
V
Test Procedure I
A
V
330 Ω
Test Procedure III
REJ03G1248-0200
Page 3 of 4
Rev.2.00
Nov 30, 2007
V
330 Ω
Test Procedure II
6Ω
6V
A
6V
BCR1AM-12A
Package Dimensions
Package Name
TO-92*
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003EA-A
Previous Code

MASS[Typ.]
0.23g
Unit: mm
φ5.0Max
11.5Min
5.0Max
4.4
1.25 1.25
3.6
1.1
Circumscribed circle φ0.7
Order Code
Lead form
Straight type
Lead form
Form A8
Standard packing
Vinyl sack
Vinyl sack
Taping
Quantity
500
500
2000
Standard order code
Type name
Type name – Lead forming code
Type name – TB
Note : Please confirm the specification about the shipping in detail.
REJ03G1248-0200
Page 4 of 4
Rev.2.00
Nov 30, 2007
Standard order
code example
BCR1AM-12A
BCR1AM-12A-A6
BCR1AM-12A-TB
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Colophon .7.2