Power Management Switch ICs for PCs and Digital Consumer Products 1ch Small Package High Side Switch ICs for USB Devices and Memory Cards BD2232G, BD2233G No.11029EAT23 ●Description BD2232G and BD2233G are low on-resistance N-channel MOSFET high-side power switches, optimized for Universal Serial Bus (USB) applications. BD2232G and BD2233G are equipped with the function of over-current detection, thermal shutdown, under-voltage lockout and soft-start. ●Features 1) Low On-Resistance (Typ. 100mΩ) N-channel MOSFET Built-in 2) Output Discharge Function 3) Over-Current Detection 4) Thermal Shutdown 5) Open-Drain Fault Flag Output 6) Under-Voltage Lockout 7) Soft-Start Circuit 8) Input Voltage Range: 2.7V ~ 5.5V 9) Control Input Logic Active-High (BD2232G), Active-Low (BD2233G) 10) SSOP5 Package ●Absolute Maximum Ratings (Ta=25℃) Parameter Symbol Ratings Unit VIN -0.3 ~ 6.0 V VEN(/EN) -0.3 ~ 6.0 V /OC voltage V/OC -0.3 ~ 6.0 V /OC sink current I/OC 5 mA VOUT voltage VOUT -0.3 ~ VIN + 0.3 V Storage temperature TSTG -55 ~ 150 ℃ Pd 675 *1 mW VIN supply voltage EN(/EN) input voltage Power dissipation *1 Mounted on 70mm x 70mm x 1.6mm glass epoxy board. Reduce 5.4mW per 1℃ above 25℃ * This IC is not designed to be radiation-proof. ●Operating Conditions Parameter Symbol Ratings Min. Typ. Max. Unit VIN operating voltage VIN 2.7 5.0 5.5 V Operating temperature TOPR -40 - 85 ℃ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/12 2011.02 - Rev.A Technical Note BD2232G, BD2233G ●Electrical Characteristics DC Characteristics (VIN= 5V, Ta= 25℃, unless otherwise specified.) Parameter Symbol Limits Min. Typ. Max. Unit Conditions Operating current IDD - 110 160 μA VEN = 5V (BD2232G) V/EN = 0V (BD2233G) VOUT = open Standby current ISTB - 0.01 5 μA VEN = 0V (BD2232G) V/EN = 5V (BD2233G) VOUT = open VENH(/ENH) 2.0 - - V High input VENL(/ENL) - - 0.8 V Low input IEN(/EN) -1 0.01 1 μA VEN(/EN) = 0V or 5V On-resistance RON - 100 145 mΩ IOUT= 500mA Over-current threshold ITH 1150 1275 1400 mA Short circuit output current ISC 500 - - mA Output discharge resistance RDISC 30 60 120 Ω IDISC= 1mA /OC output low voltage V/OC - - 0.4 V I/OC= 0.5mA VTUVH 2.1 2.3 2.5 V VIN increasing VTUVL 2.0 2.2 2.4 V VIN decreasing EN(/EN) input voltage EN(/EN) input leakage UVLO threshold VOUT= 0V, RMS AC Characteristics Parameter Symbol Limits Min. Typ. Max. Unit Conditions Output rise time TON1 - 1 6 ms RL= 100Ω Output turn-on time TON2 - 1.5 10 ms RL= 100Ω Output fall time TOFF1 - 1 20 μs RL= 100Ω Output turn-off time TOFF2 - 3 40 μs RL= 100Ω T/OC 10 15 20 ms /OC delay time www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/12 2011.02 - Rev.A Technical Note BD2232G, BD2233G ●Measurement Circuit VIN VIN A A VIN VOUT VIN 1µF RL GND VEN(/EN) VOUT 1µF GND VEN(/EN) /OC EN(/EN) Operating current EN(/EN) /OC EN,/EN Input voltage, Output rise/fall time VIN VIN A A 10kΩ IOC VIN VOUT 1µF EN(/EN) VOUT 1µF IOUT GND VEN(/EN) VIN GND VEN(/EN) /OC On-resistance, Over-current detection EN(/EN) /OC /OC Output low voltage Fig.1 Measurement circuit ●Timing Diagram VEN 50% 50% TON2 TOFF2 10% TON1 www.rohm.com TOFF2 90% 90% V OUT 10% TOFF1 10% 10% TON1 TOFF1 Fig.3 Output rise/fall time (BD2233G) Fig.2 Output rise/fall time (BD2232G) © 2011 ROHM Co., Ltd. All rights reserved. 50% 50% TON2 90% 90% VOUT V/EN 3/12 2011.02 - Rev.A Technical Note BD2232G, BD2233G ●Reference Data 140 140 1.0 120 100 80 60 40 20 VIN=5.0V 120 100 80 60 40 20 0 0 2 3 4 5 SUPPLY VOLTAGE : VIN[V] 0.6 0.4 0.2 0.0 1.5 Low to High High to Low 1.0 0.5 Low to High 1.5 High to Low 1.0 0.5 3 4 5 SUPPLY VOLTAGE : VIN[V] 6 -50 150 1.5 Ta=25°C 50 OVER CURRENT THRESHOLD:ITH[A] VIN=5.0V 100 100 50 0 0 -50 6 Fig.10 On-resistance 1.2 1.1 1.0 0.9 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.13 Over-current threshold www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1.2 1.1 1.0 0.9 2 3 4 5 SUPPLY VOLTAGE : VIN[V] 6 Fig.12 Over-current threshold 100 /OC OUTPUT LOW VOLTAGE:V/OC[mV] 1.3 /OC OUTPUT LOW VOLTAGE:V/OC[mV] 1.4 1.3 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 100 VIN=5.0V Ta=25°C 1.4 Fig.11 On-resistance 1.5 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.9 EN,/EN input voltage Fig.8 EN,/EN input voltage ON RESISTANCE : RON[mΩ] ON RESISTANCE : RON[mΩ] VIN=5.0V 0.0 2 Fig.7 Standby current EN,/EN disable 150 6 2.0 0.0 -50 3 4 5 SUPPLY VOLTAGE : VIN [V] Fig.6 Standby current EN,/EN disable Ta=25°C 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 3 4 5 SUPPLY VOLTAGE : VIN[V] 0.2 2 ENABLE INPUT VOLTAGE : VEN[V] ENABLE INPUT VOLTAGE : VEN[V] STANDBY CURRENT : ISTB[μA] 0.8 2 0.4 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 2.0 VIN=5.0V 200 0.6 Fig.5 Operating current EN,/EN enable 1.0 -50 0.8 0.0 -50 6 Fig.4 Operating current EN,/EN enable OVER CURRENT THRESHOLD:ITH[A] Ta=25°C STANDBY CURRENT : ISTB[µA] OPERATING CURRENT : IDD[μA] OPERATING CURRENT : IDD[μA] Ta=25°C Ta=25°C 80 60 40 20 0 2 3 4 5 SUPPLY VOLTAGE : VIN[V] 6 Fig.14 /OC output low voltage 4/12 VIN=5.0V 80 60 40 20 0 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.15 /OC output low voltage 2011.02 - Rev.A Technical Note BD2232G, BD2233G 2.4 2.3 VTUVH 2.2 VTUVL 2.1 2.0 -50 VIN=5.0V 4.0 0.8 0.6 0.4 0.2 0.0 2.0 5.0 VIN=5.0V 4.0 3.0 2.0 1.0 0.0 0.0 Fig.19 Output rise time 3.0 2.0 1.0 3 4 5 SUPPLY VOLTAGE : VIN[V] 6 -50 5.0 6.0 VIN=5.0V Ta=25°C 4.0 Ta=25°C 2.0 1.0 TURN OFF TIME : TOFF2[μs] FALL TIME : TOFF1[μs] 4.0 3.0 3.0 2.0 1.0 0.0 0.0 6 Fig.22 Output fall time 1.0 0.0 Fig.25 Output turn-off time www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3 4 5 SUPPLY VOLTAGE : VIN[V] 6 Fig.24 Output turn-off time 20 VIN=5.0V 18 16 14 12 10 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 1.0 2 /OC DDLAY TIME : T/OC [ms] 2.0 2.0 Ta=25°C /OC DDLAY TIME : T/OC [ms] 3.0 3.0 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 20 4.0 4.0 Fig.23 Output fall time VIN=5.0V 5.0 5.0 0.0 -50 6.0 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.21 Output turn-on time Fig.20 Output turn-on time 5.0 -50 4.0 0.0 2 0 50 100 AMBIENT TEMPERATURE : Ta[℃] 6 Fig.18 Output rise time TURN ON TIME : TON2[ms] TURN ON TIME : TON2[ms] 3.0 3 4 5 SUPPLY VOLTAGE : VIN [V] 3 4 5 SUPPLY VOLTAGE : VIN [V] Ta=25°C 1.0 FALL TIME : TOFF1 [µs] 2 5.0 4.0 RISE TIME : TON1[ms] 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.17 UVLO hysteresis voltage VIN=5.0V 2 2.0 0.0 -50 5.0 -50 3.0 1.0 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.16 UVLO threshold TURN OFF TIME : TOFF2[μs] Ta=25°C RISE TIME : TON1 [ms] VIN=5.0V UVLO HYSTERESIS VOLTAGE:VHSY[V] UVLO THRESHOLD : VTUVH, VTUVL[V] 5.0 1.0 2.5 18 16 14 12 10 2 3 4 5 SUPPLY VOLTAGE : VIN [V] Fig.26 /OC delay time 5/12 6 -50 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.27 /OC delay time 2011.02 - Rev.A Technical Note BD2232G, BD2233G 200 VIN=5.0V Ta=25°C DISC ON RESISTANCE : RDISC[Ω] DISC O N RESISTANCE : RDISC[Ω ] 200 150 100 50 150 100 50 0 0 2 3 4 5 SUPPLY VOLTAGE : V IN[V] -50 6 Fig.28 Discharge on resistance 0 50 100 AMBIENT TEMPERATURE : Ta[℃] Fig.29 Discharge on resistance ●Waveform Data (BD2232G) VEN (5V/div.) VEN (5V/div.) VEN (5V/div.) V/OC (5V/div.) V/OC (5V/div.) V/OC (5V/div.) VOUT (5V/div.) VOUT (5V/div.) CL=220uF CL=100uF VIN=5V RL=20Ω IOUT (0.5A/div.) VIN=5V IOUT (0.5A/div.) RL=20Ω IOUT (0.2A/div.) VIN=5V RL=20Ω CL=47uF TIME(1ms/div.) Fig.30 Output rise characteristic TIME(1us/div.) TIME (1ms/div.) Fig.31 Output fall characteristic Fig.32 Inrush current response V/OC (5V/div.) VEN (5V/div.) VEN (5V/div.) VOUT (5V/div.) V/OC (5V/div.) V/OC (5V/div.) VOUT (5V/div.) VOUT (5V/div.) IOUT (0.5A/div.) IOUT (0.5A/div.) IOUT (0.5A/div.) VIN=5V VIN=5V TIME (100ms/div.) TIME (5ms/div.) TIME (5ms/div.) Fig.33 Over-current response ramped load Fig.34 Over-current response enable to shortcircuit VOUT (5V/div.) V/OC (5V/div.) VIN=5V Fig.35 Over-current response enable to shortcircuit VIN (5V/div.) VIN (5V/div.) VOUT (5V/div.) VOUT (5V/div.) VIN=5V IOUT (0.2A/div.) IOUT (1A/div.) TIME (5ms/div.) Fig.36 Over-current response 1 load to enabled device www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. RL=20Ω TIME (10ms/div.) Fig.37 UVLO response increasing VIN 6/12 IOUT (0.2A/div.) RL=20Ω TIME (10ms/div.) Fig.38 UVLO response decreasing VIN 2011.02 - Rev.A Technical Note BD2232G, BD2233G ●Block Diagram VOUT VIN /EN Under-voltage Lockout Charge Pump EN(/EN) Over-current Protection Thermal Shutdown /OC Delay Counter GND 2 GND Top View EN(/EN) 3 Fig.39 Block diagram ●Pin Description Pin No. 5 VOUT VIN 1 4 /OC Fig.40 Pin configuration Symbol I/O 1 VIN - Switch input and the supply voltage for the IC. 2 GND - Ground. 3 EN, /EN I Enable input. EN: High level input turns on the switch. (BD2232G) /EN: Low level input turns on the switch. (BD2233G) 4 /OC O Over-current notification terminal. Low level output during over-current or over-temperature condition. Open-drain fault flag output. 5 VOUT O Switch output. ●I/O Circuit Symbol Pin No. EN (/EN) 3 VOUT 5 Function Equivalent Circuit EN (/EN) VOUT /OC /OC 4 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 7/12 2011.02 - Rev.A Technical Note BD2232G, BD2233G ●Functional Description 1. Switch Operation VIN terminal and VOUT terminal are connected to the drain and the source of switch MOSFET respectively. And the VIN terminal is used also as power source input to internal control circuit. When the switch is turned on from EN,/EN control input, VIN terminal and VOUT terminal are connected by a 100mΩ(Typ.) switch. In on status, the switch is bidirectional. Therefore, when the potential of VOUT terminal is higher than that of VIN terminal, current flows from VOUT terminal to VIN terminal. 2. Thermal Shutdown Circuit (TSD) If over-current would continue, the temperature of the IC would increase drastically. If the junction temperature were beyond 135℃(Typ.) in the condition of over-current detection, thermal shutdown circuit operates and makes power switch turn off and outputs fault flag (/OC). Then, when the junction temperature decreases lower than 115℃(Typ.), power switch is turned on and fault flag (/OC) is cancelled. Unless the fact of the increasing chips temperature is removed or the output of power switch is turned off, this operation repeats. The thermal shutdown circuit operates when the switch is on (EN,/EN signal is active). 3. Over-Current Detection (OCD) The over-current detection circuit limits current (ISC) and outputs fault flag (/OC) when current flowing in each switch MOSFET exceeds a specified value. There are three types of response against over-current. The over-current detection circuit works when the switch is on (EN,/EN signal is active). 3-1. When the switch is turned on while the output is in shortcircuit status When the switch is turned on while the output is in shortcircuit status or so, the switch gets in current limit status soon. 3-2. When the output shortcircuits while the switch is on When the output shortcircuits or large capacity is connected while the switch is on, very large current flows until the over-current limit circuit reacts. When the current detection, limit circuit works, current limitation is carried out. 3-3. When the output current increases gradually When the output current increases gradually, current limitation does not work until the output current exceeds the over-current detection value. When it exceeds the detection value, current limitation is carried out. 4. Under-Voltage Lockout (UVLO) UVLO circuit prevents the switch from turning on until the VIN exceeds 2.3V(Typ.). If the VIN drops below 2.2V(Typ.) while the switch turns on, then UVLO shuts off the power switch. UVLO has hysteresis of a 100mV(Typ). Under-voltage lockout circuit works when the switch is on (EN,/EN signal is active). 5. Fault Flag (/OC) Output Fault flag output is N-MOS open drain output. At detection of over-current, thermal shutdown, low level is output. Over-current detection has delay filter. This delay filter prevents instantaneous current detection such as inrush current at switch on, hot plug from being informed to outside. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 8/12 2011.02 - Rev.A Technical Note BD2232G, BD2233G Over Current Detection Over Current Load Removed VOUT ITH ISC IOUT T/OC V/OC Fig.41 Over-current detection VEN Output Shortcircuit VOUT Thermal Shutdown IOUT V/OC Delay Fig.42 Over-current detection, Thermal shutdown timing (BD2232G) V/EN Output Shortcircuit VOUT Thermal Shutdown IOUT V/OC Delay Fig.43 Over-current detection, Thermal shutdown timing (BD2233G) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 9/12 2011.02 - Rev.A Technical Note BD2232G, BD2233G ●Typical Application Circuit 5V (Typ.) 10kΩ~ 100kΩ Ferrite Beads CIN VIN VOUT GND Controller EN(/EN) CL + - /OC Fig.44 Typical application circuit ●Application Information When excessive current flows owing to output shortcircuit or so, ringing occurs by inductance of power source line to IC, and may cause bad influences upon IC actions. In order to avoid this case, connect a bypath capacitor CIN by VIN terminal and GND terminal of IC. 1μF or higher is recommended. In order to decrease voltage fluctuations of power source line to IC, connect a low ESR capacitor in parallel with CIN. 10μF ~ 100μF or higher is effective. Pull up /OC output by resistance 10kΩ ~ 100kΩ. Set up value which satisfies the application as CL and Ferrite Beads. This system connection diagram doesn’t guarantee operating as the application. When using the circuit with changes to the external circuit constants, make sure to leave an adequate margin for external components including static and transitional characteristics as well as dispersion of the IC. ●Power Dissipation Characteristic (SSOP5 package) 700 POWER DISSIPATION : Pd [mW] 600 500 400 300 200 100 0 0 25 50 75 85 100 AMBIENT TEMPERATURE : Ta [℃] 125 150 * 70mm x 70mm x 1.6mm Glass Epoxy Board Fig.45 Power Dissipation Curve (Pd-Ta Curve) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 10/12 2011.02 - Rev.A Technical Note BD2232G, BD2233G ●Notes for use (1) Absolute maximum ratings An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc., can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical safety measures including the use of fuses, etc. (2) Operating conditions These conditions represent a range within which characteristics can be provided approximately as expected. The electrical characteristics are guaranteed under the conditions of each parameter. (3) Reverse connection of power supply connector The reverse connection of power supply connector can break down ICs. Take protective measures against the breakdown due to the reverse connection, such as mounting an external diode between the power supply and the IC’s power supply terminal. (4) Power supply line Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this regard, for the digital block power supply and the analog block power supply, even though these power supplies has the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus suppressing the diffraction of digital noises to the analog block power supply resulting from impedance common to the wiring patterns. For the GND line, give consideration to design the patterns in a similar manner. Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal. At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus determining the constant. (5) GND voltage Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state. Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric transient. (6) Short circuit between terminals and erroneous mounting In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or between the terminal and the power supply or the GND terminal, the ICs can break down. (7) Operation in strong electromagnetic field Be noted that using ICs in the strong electromagnetic field can malfunction them. (8) Inspection with set PCB On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress. Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention to the transportation and the storage of the set PCB. (9) Input terminals In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the guaranteed value of electrical characteristics. (10) Ground wiring pattern If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well. (11) External capacitor In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc. (12) Thermal shutdown circuit (TSD) When junction temperatures become detected temperatures or higher, the thermal shutdown circuit operates and turns a switch OFF. The thermal shutdown circuit is aimed at isolating the LSI from thermal runaway as much as possible. Do not continuously use the LSI with this circuit operating or use the LSI assuming its operation. (13) Thermal design Perform thermal design in which there are adequate margins by taking into account the power dissipation (Pd) in actual states of use. www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 11/12 2011.02 - Rev.A Technical Note BD2232G, BD2233G ●Ordering part number B D 2 Part No. 2 3 2 G Part No. 2232 2233 - Package G: SSOP5 T R Packaging and forming specification TR: Embossed tape and reel SSOP5 5 4 1 2 0.2Min. +0.2 1.6 −0.1 2.8±0.2 <Tape and Reel information> +6° 4° −4° 2.9±0.2 3 Tape Embossed carrier tape Quantity 3000pcs Direction of feed TR The direction is the 1pin of product is at the upper right when you hold ( reel on the left hand and you pull out the tape on the right hand 1pin +0.05 0.13 −0.03 1.25Max. ) 0.05±0.05 1.1±0.05 S +0.05 0.42 −0.04 0.95 0.1 S Direction of feed Reel (Unit : mm) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 12/12 ∗ Order quantity needs to be multiple of the minimum quantity. 2011.02 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. 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