BF1206F Dual N-channel dual gate MOSFET Rev. 01 — 30 January 2006 Product data sheet 1. Product profile 1.1 General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Automatic Gain Control (AGC). Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features ■ ■ ■ ■ ■ Two low noise gain controlled amplifiers in a single package Superior cross-modulation performance during AGC High forward transfer admittance High forward transfer admittance to input capacitance ratio Suited for 3 volt applications 1.3 Applications ■ Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High Frequency (UHF) applications with 3 V supply voltage, such as digital and analog television tuners BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 1.4 Quick reference data Table 1: Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter VDS Conditions drain current (DC) |yfs| forward transfer admittance NF Xmod Typ Max Unit - - 6 V - - 30 mA amplifier A 17 22 32 mS amplifier B 17 22 32 mS amplifier A - 2.4 2.9 pF amplifier B - 1.7 2.2 pF amplifier A; f = 400 MHz - 1.0 1.6 dB amplifier B; f = 800 MHz - 1.0 1.6 dB drain-source voltage (DC) ID Ciss(G1) Min input capacitance at gate1 ID = 4 mA ID = 4 mA; f = 100 MHz ID = 4 mA noise figure cross modulation input level for k = 1 % at 40 dB AGC amplifier A 92 97 - dBµV amplifier B 93 98 - dBµV 2. Pinning information Table 2: Discrete pinning Pin Description Simplified outline 1 gate1 (AMP A) 2 source 6 3 gate1 (AMP B) 4 drain (AMP B) 5 drain (AMP A) 6 gate2 5 Symbol 4 AMP A G1A G2 DA S AMP B 1 2 3 G1B DB sym111 3. Ordering information Table 3: Ordering information Type number BF1206F Package Name Description Version - plastic surface mounted package; 6 leads SOT666 BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 2 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 4. Marking Table 4: Marking Type number Marking code BF1206F 2N 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per MOSFET VDS drain-source voltage (DC) - 6 V ID drain current (DC) - 30 mA IG1 gate1 current - ±10 mA IG2 gate2 current - ±10 mA - 180 mW Tsp ≤ 107 °C [1] Ptot total power dissipation Tstg storage temperature −65 +150 °C Tj junction temperature - 150 °C [1] Tsp is the temperature at the solder point of the source lead. 001aac193 250 Ptot (mW) 200 150 100 50 0 0 50 100 150 200 Tsp (˚C) Fig 1. Power derating curve 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to solder point Conditions BF1206F_1 Product data sheet Typ Unit 240 K/W © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 3 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 7. Static characteristics Table 7: Static characteristics Tj = 25 °C. Symbol Parameter Conditions Min Typ Max Unit amplifier A 6 - - V amplifier B 6 - - V 6 - 10 V Per MOSFET; unless otherwise specified V(BR)DSS drain-source breakdown voltage VG1-S = VG2-S = 0 V; ID = 10 µA V(BR)G1-SS gate1-source breakdown voltage VGS = VDS = 0 V; IG1-S = 10 mA V(BR)G2-SS gate2-source breakdown voltage VGS = VDS = 0 V; IG2-S = 10 mA 6 - 10 V VF(S-G1) forward source-gate1 voltage VG2-S = VDS = 0 V; IS-G1 = 10 mA 0.5 - 1.5 V VF(S-G2) forward source-gate2 voltage VG1-S = VDS = 0 V; IS-G2 = 10 mA 0.5 - 1.5 V VG1-S(th) gate1-source threshold voltage VDS = 5 V; VG2-S = 4 V; ID = 100 µA 0.3 - 1.0 V VG2-S(th) gate2-source threshold voltage VDS = 5 V; VG1-S = 5 V; ID = 100 µA 0.35 - 1.0 V IDSX drain cut-off current VG2-S = 2.5 V; VDS = 2.8 V amplifier A; RG1 = 270 kΩ 3 - 6.5 mA amplifier B; RG1 = 220 kΩ 3 - 6.5 mA amplifier A - - 50 nA amplifier B - - 50 nA - - 20 nA Min Typ Max Unit IG1-S IG2-S [1] gate1 cut-off current [1] VG1-S = 5 V; VG2-S = VDS = 0 V gate2 cut-off current VG2-S = 5 V; VG1-S = VDS = 0 V; RG1 connects gate 1 to VGG = 2.8 V. 8. Dynamic characteristics 8.1 Dynamic characteristics for amplifier A Table 8: Dynamic characteristics for amplifier A Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter Conditions |yfs| forward transfer admittance Tj = 25 °C Ciss(G1) input capacitance at gate1 17 22 32 mS f = 100 MHz [1] - 2.4 2.9 pF Ciss(G2) input capacitance at gate2 f = 100 MHz [1] - 3.2 - pF Coss output capacitance f = 100 MHz [1] - 1.1 - pF f = 100 MHz [1] - 15 30 fF BS = BS(opt); BL = BL(opt) [1] Crss Gtr NF reverse transfer capacitance transducer power gain noise figure f = 200 MHz; GS = 2 mS; GL = 0.5 mS - 31 - dB f = 400 MHz; GS = 2 mS; GL = 1 mS - 28 - dB f = 800 MHz; GS = 3.3 mS; GL = 1 mS - 23 - dB f = 11 MHz; GS = 20 mS; BS = 0 - 3.5 - dB f = 400 MHz; YS = YS(opt) - 1.0 1.6 dB f = 800 MHz; YS = YS(opt) - 1.1 1.7 dB BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 4 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET Table 8: Dynamic characteristics for amplifier A …continued Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter Xmod Conditions cross modulation Min input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [1] Calculated from measured S-parameters. [2] Measured in Figure 32 test circuit. Typ Max Unit [2] at 0 dB AGC 88 - - dBµV at 10 dB AGC - 85 - dBµV at 40 dB AGC 92 97 - dBµV 8.1.1 Graphs for amplifier A 001aad896 15 (1) (1) ID (mA) (3) ID (mA) 001aad897 16 (2) (2) 12 (3) 10 8 5 (4) (5) (4) (6) 4 (7) 0 0 0 0.4 0.8 1.2 1.6 2.0 VG1−S (V) 0 1 3 4 VDS (V) (1) VG2-S = 2.5 V. (1) VG1-S(A) = 1.4 V. (2) VG2-S = 2.0 V. (2) VG1-S(A) = 1.3 V. (3) VG2-S = 1.5 V. (3) VG1-S(A) = 1.2 V. (4) VG2-S = 1.0 V. (4) VG1-S(A) = 1.0 V. VDS(A) = 2.8 V; Tj = 25 °C. 2 (5) VG1-S(A) = 0.9 V. (6) VG1-S(A) = 0.85 V. (7) VG1-S(A) = 0.8 V. VG2-S = 2.5 V; Tj = 25 °C. Fig 2. Amplifier A: transfer characteristics; typical values Fig 3. Amplifier A: output characteristics; typical values BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 5 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 001aad898 100 IG1 (µA) 001aad899 40 Yfs (mS) (1) 80 30 (1) (2) 60 20 (2) 40 10 (3) 20 (4) (3) (4) 0 0 0 0.5 1.0 1.5 2.0 2.5 VG1−S (V) 0 4 8 12 16 ID (mA) (1) VG2-S = 2.5 V. (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. (4) VG2-S = 1.0 V. VDS(A) = 2.8 V; Tj = 25 °C. VDS(A) = 2.8 V; Tj = 25 °C. Fig 4. Amplifier A: gate1 current as a function of gate1 voltage; typical values Fig 5. Amplifier A: forward transfer admittance as a function of drain current; typical values 001aad900 16 ID (mA) 001aad901 6 ID (mA) 12 4 8 2 4 0 0 10 20 30 IG1 (µA) 0 0 2 3 VGG (V) VDS(A) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C. VDS(A) = 2.8 V; VG2 = 2.5 V; RG1(A) = 270 kΩ; see Figure 32. Fig 6. Amplifier A: drain current as a function of gate1 current; typical values Fig 7. Amplifier A: drain current as a function of gate1 supply voltage (=VGG); typical values BF1206F_1 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 6 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 001aad902 10 ID (mA) 001aad903 6 (1) ID (mA) (2) 8 (1) (3) 4 (4) 6 (2) (5) (6) (3) (7) (8) (9) 4 2 (4) 2 (5) 0 0 0 1 2 3 4 VGG = VDS (V) 0 1 2 3 4 VG2−S (V) (1) RG1 = 100 kΩ. (1) VGG = 1.0 V (2) RG1 = 120 kΩ. (2) VGG = 1.5 V (3) RG1 = 150 kΩ. (3) VGG = 2.0 V (4) RG1 = 180 kΩ. (4) VGG = 2.5 V (5) RG1 = 220 kΩ. (5) VGG = 3.0 V Tj = 25 °C; RG1(A) = 270 kΩ (connected to VGG); see Figure 32. (6) RG1 = 270 kΩ. (7) RG1 = 330 kΩ. (8) RG1 = 390 kΩ. (9) RG1 = 470 kΩ. VG2-S = 2.5 V; Tj = 25 °C; see Figure 32. Fig 8. Amplifier A: drain current as a function of VDS and VGG; typical values Fig 9. Amplifier A: drain current as a function of gate2 voltage; typical values BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 7 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 001aad904 0 gain reduction (dB) 10 001aad905 110 Vunw (dBµV) 100 20 30 90 40 80 50 0 1 2 3 0 20 40 60 gain reduction (dB) VAGC (V) VDS(A) = 2.8 V; VGG = 2.8 V; ID(nom) = 4 mA; Tamb = 25 °C. VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V; fw = 50 MHz; funw = 60 MHz; ID(nom) = 4 mA; Tamb = 25 °C. Fig 10. Amplifier A: typical gain reduction as a function of the AGC voltage; typical values Fig 11. Amplifier A: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values 001aad906 5 ID (mA) 4 3 2 1 0 0 20 40 60 gain reduction (dB) VDS(A) = 2.8 V; VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(A) = 270 kΩ; f = 50 MHz; Tamb = 25 °C. Fig 12. Amplifier A: typical drain current as a function of gain reduction; typical values BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 8 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 001aad907 102 001aad908 102 −102 bis, gis (mS) Yfs (mS) 10 ϕfs (deg) Yfs bis 1 10 −10 ϕfs gis 10−1 10−2 10 102 1 103 10 −1 103 102 f (MHz) f (MHz ) VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V; ID(A) = 4 mA. VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V; ID(A) = 4 mA. Fig 13. Amplifier A: input admittance and phase as a function of frequency; typical values 001aad909 102 ϕrs Yrs (µS) 102 ϕrs (deg) Fig 14. Amplifier A: forward transfer admittance and phase as a function of frequency; typical values 001aad910 10 bos, gos (mS) bos 1 Yrs 10 10 10−1 gos 1 10 1 103 102 10−2 10 f (MHz ) 103 f (MHz) VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V; ID(A) = 4 mA. VDS(A) = 2.8 V; VG2-S = 2.5 V; VDS(B) = 0 V; ID(A) = 4 mA. Fig 15. Amplifier A: reverse transfer admittance and phase as a function of frequency: typical values Fig 16. Amplifier A: output admittance and phase as a function of frequency; typical values BF1206F_1 Product data sheet 102 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 9 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 8.1.2 Scattering parameters for amplifier A Table 9: Scattering parameters for amplifier A VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) 50 0.9923 −4.11 2.18 174.68 0.00038 102.27 0.995 −1.83 100 0.9930 −8.29 2.18 169.51 0.00080 85.65 0.996 −3.75 200 0.9877 −16.41 2.16 159.20 0.00161 80.93 0.995 −7.49 300 0.9802 −24.48 2.12 149.04 0.00233 76.76 0.994 −11.22 400 0.9705 −32.34 2.07 138.99 0.00303 73.21 0.992 −14.96 500 0.9596 −39.91 2.01 129.15 0.00354 69.83 0.989 −18.68 600 0.9483 −47.34 1.94 119.45 0.00394 67.19 0.987 −22.39 700 0.9361 −54.59 1.87 109.95 0.00426 65.26 0.984 −26.11 800 0.9239 −61.64 1.79 100.69 0.00453 63.89 0.981 −29.82 900 0.9129 −68.28 1.72 91.66 0.00457 64.06 0.979 −33.57 1000 0.9018 −74.57 1.64 82.86 0.00456 65.60 0.976 −37.31 8.2 Noise data for amplifier A Table 10: Noise data for amplifier A VDS(A) = 2.8 V; VG2-S = 2.5 V; ID(A) = 4 mA. f (MHz) NFmin (dB) Γopt rn (ratio) ratio (deg) 400 1.0 0.78 26 0.84 800 1.1 0.87 53 0.87 8.3 Dynamic characteristics for amplifier B Table 11: Dynamic characteristics for amplifier B Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter Conditions |yfs| Tj = 25 °C Ciss(G1) forward transfer admittance input capacitance at gate1 Min Typ Max Unit - 22 - mS f = 100 MHz [1] - 1.7 2.2 pF Ciss(G2) input capacitance at gate2 f = 100 MHz [1] - 4.0 - pF Coss output capacitance f = 100 MHz [1] - 0.85 - pF reverse transfer capacitance f = 100 MHz [1] - 30 45 fF transducer power gain [1] Crss Gtr NF noise figure BS = BS(opt); BL = BL(opt) f = 200 MHz; GS = 2 mS; GL = 0.5 mS - 32 - dB f = 400 MHz; GS = 2 mS; GL = 1 mS - 29 - dB f = 800 MHz; GS = 3.3 mS; GL = 1 mS - 25 - dB f = 11 MHz; GS = 20 mS; BS = 0 - 4.5 - dB f = 400 MHz; YS = YS(opt) - 0.9 1.5 dB f = 800 MHz; YS = YS(opt) - 1.0 1.6 dB BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 10 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET Table 11: Dynamic characteristics for amplifier B …continued Common source; Tamb = 25 °C; VG2-S = 2.5 V; VDS = 2.8 V; ID = 4 mA. Symbol Parameter Xmod Conditions cross modulation Min Typ Max Unit at 0 dB AGC 89 - - dBµV at 10 dB AGC - 85 - dBµV at 40 dB AGC 93 98 - dBµV input level for k = 1 %; fw = 50 MHz; funw = 60 MHz [1] Calculated from measured S-parameters. [2] Measured in Figure 32 test circuit. [2] 8.3.1 Graphs for amplifier B 001aad911 15 (1) (1) ID (mA) (3) ID (mA) 001aad912 16 (2) (2) 12 10 (3) 8 5 (4) (4) (5) 4 (6) (7) 0 0 0 0.4 0.8 1.2 1.6 2.0 VG1−S (V) 0 1 3 4 VDS (V) (1) VG2-S = 2.5 V. (1) VG1-S(B) = 1.3 V. (2) VG2-S = 2.0 V. (2) VG1-S(B) = 1.2 V. (3) VG2-S = 1.5 V. (3) VG1-S(B) = 1.1 V. (4) VG2-S = 1.0 V. (4) VG1-S(B) = 1.0 V. VDS(B) = 2.8 V; Tj = 25 °C. 2 (5) VG1-S(B) = 0.9 V. (6) VG1-S(B) = 0.85 V. (7) VG1-S(B) = 0.8 V. VG2-S = 2.5 V; Tj = 25 °C. Fig 17. Amplifier B: transfer characteristics; typical values Fig 18. Amplifier B: output characteristics; typical values BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 11 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 001aad913 100 IG1 (µA) 001aad914 40 Yfs (mS) (1) 80 (1) 30 (2) 20 (3) 10 (2) 60 40 (4) 20 (3) (4) 0 0 0 0.5 1.0 1.5 2.0 2.5 VG1−S (V) 0 4 8 12 16 ID (mA) (1) VG2-S = 2.5 V. (1) VG2-S = 2.5 V. (2) VG2-S = 2.0 V. (2) VG2-S = 2.0 V. (3) VG2-S = 1.5 V. (3) VG2-S = 1.5 V. (4) VG2-S = 1.0 V. (4) VG2-S = 1.0 V. VDS(B) = 2.8 V; Tj = 25 °C. VDS(B) = 2.8 V; Tj = 25 °C. Fig 19. Amplifier B: gate1 current as a function of gate1 voltage; typical values Fig 20. Amplifier B: forward transfer admittance as a function of drain current; typical values 001aad915 16 ID (mA) 001aad916 6 ID (mA) 12 4 8 2 4 0 0 10 20 30 IG1 (µA) 0 0 2 3 VGG (V) VDS(B) = 2.8 V; VG2-S = 2.5 V, Tamb = 25 °C. VDS(B) = 2.8 V; VG2-S = 2.5 V; RG1(B) = 220 kΩ; see Figure 32. Fig 21. Amplifier B: drain current as a function of gate1 current; typical values Fig 22. Amplifier B: drain voltage as a function of gate1 supply voltage (=VGG); typical values BF1206F_1 Product data sheet 1 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 12 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 001aad917 10 ID (mA) 001aad918 6 ID (mA) (1) 8 (2) (1) 4 (3) 6 (2) (4) (3) (5) 4 (6) (7) (8) 2 (4) 2 (5) 0 0 0 1 2 3 4 VGG = VDS (V) 0 1 2 3 4 VG2−S (V) (1) RG1 = 120 kΩ. (1) VGG = 3.0 V. (2) RG1 = 150 kΩ. (2) VGG = 2.5 V. (3) RG1 = 180 kΩ. (3) VGG = 2.0 V. (4) RG1 = 220 kΩ. (4) VGG = 1.5 V. (5) RG1 = 270 kΩ. (1) VGG = 1.0 V. RG1(B) = 220 kΩ; Tj = 25 °C; see Figure 32. (6) RG1 = 330 kΩ. (7) RG1 = 390 kΩ. (8) RG1 = 470 kΩ. VG2-S = 2.5 V; RG1(B) connected to VGG; see Figure 32. Fig 23. Amplifier B: drain current as a function of VDS and VGG; typical values Fig 24. Amplifier B: drain current as a function of gate2 voltage; typical values BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 13 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 001aad919 0 gain reduction (dB) 10 001aad920 110 Vunw (dBµV) 100 20 30 90 40 80 50 0 1 2 3 0 20 40 60 gain reduction (dB) VAGC (V) VDS(A) = 2.8 V; VG2(nom) = 2.5 V; ID(nom) = 4 mA; Tamb = 25 °C. VDS(B) = 2.8 V; VG2 = 2.5 V; ID(nom) = 4 mA; fw = 50 MHz; funw = 60 MHz; Tamb = 25 °C. Fig 25. Amplifier B: typical gain reduction as a function of the AGC voltage; typical values Fig 26. Amplifier B: unwanted voltage for 1 % cross-modulation as a function of gain reduction; typical values 001aad921 5 ID (mA) 4 3 2 1 0 0 20 40 60 gain reduction (dB) VDS(B) = VGG = 2.8 V; VG2(nom) = 2.5 V; RG1(B) = 220 kW; f = 50 MHz; Tamb = 25 °C. Fig 27. Amplifier B: typical drain current as a function of gain reduction; typical values BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 14 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 001aad922 102 001aad923 102 −102 bis, gis (mS) Yfs (mS) 10 ϕfs (deg) Yfs bis 1 −10 10 ϕfs 10−1 gis 10−2 10 102 1 103 10 −1 103 102 f (Mhz) f (MHz ) VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V; ID(B) = 4 mA. VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V; ID(B) = 4 mA. Fig 28. Amplifier B: input admittance and phase as a function of frequency; typical values 001aad924 1 Yrs (µS) 103 ϕrs (deg) ϕrs 10−1 10−2 10−3 10X 102 Yrs 10 1 103 102 Fig 29. Amplifier B: forward transfer admittance and phase as a function of frequency; typical values 001aad925 10 bos, gos (mS) bos 1 10−1 gos 10−2 10 f (MHz) 103 f (MHz) VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V; ID(B) = 4 mA. VDS(B) = 2.8 V; VG2-S = 2.5 V; VDS(A) = 0 V; ID(B) = 4 mA. Fig 30. Amplifier B: reverse transfer admittance and phase as a function of frequency: typical values Fig 31. Amplifier B: output admittance and phase as a function of frequency; typical values BF1206F_1 Product data sheet 102 © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 15 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 8.3.2 Scattering parameters for amplifier B Table 12: Scattering parameters for amplifier B VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA; VDS(A) = 0 V; VG1-S(A) = 0 V; Tamb = 25 °C; typical values. f (MHz) s11 s21 s12 s22 Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) Magnitude (ratio) Angle (deg) 50 0.9939 −3.12 2.27 176.11 0.00089 94.68 0.993 −1.62 100 0.9936 −6.29 2.26 172.41 0.00170 84.37 0.993 −3.23 200 0.9896 −12.47 2.25 164.98 0.00336 81.29 0.992 −6.44 300 0.9845 −18.59 2.23 157.64 0.00503 77.17 0.990 −9.65 400 0.9779 −24.66 2.20 150.35 0.00642 73.23 0.988 −12.85 500 0.9703 −30.55 2.16 143.16 0.00769 69.72 0.986 −16.00 600 0.9620 −36.37 2.13 136.02 0.00873 66.28 0.983 −19.18 700 0.9529 −42.10 2.08 129.01 0.00967 63.19 0.980 −22.37 800 0.9439 −47.79 2.04 122.01 0.01024 60.51 0.977 −25.50 900 0.9353 −53.24 1.99 115.30 0.01058 58.52 0.975 −28.66 1000 0.9266 −58.46 1.94 108.64 0.01074 57.24 0.973 −31.85 8.3.3 Noise data for amplifier B Table 13: Noise data for amplifier B VDS(B) = 2.8 V; VG2-S = 2.5 V; ID(B) = 4 mA. f (MHz) Γopt NFmin (dB) rn (ratio) ratio (deg) 400 0.9 0.8 19 0.9 800 1.0 0.83 46 0.96 9. Test information VAGC R1 10 kΩ C1 C3 4.7 nF 4.7 nF C2 RGEN 50 Ω VI 4.7 nF R2 50 Ω DUT L1 ≈ 2.2 µH RL 50 Ω C4 RG1 VGG 4.7 nF VDS 001aad926 Fig 32. Cross-modulation test setup (for one MOSFET) BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 16 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 10. Package outline Plastic surface mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.1 OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 01-08-27 04-11-08 SOT666 Fig 33. Package outline SOT666 BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 17 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 11. Revision history Table 14: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BF1206F_1 20060130 product data sheet - BF1206F_1 - BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 18 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 12. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 13. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 15. Trademarks 14. Disclaimers Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] BF1206F_1 Product data sheet © Koninklijke Philips Electronics N.V. 2006. All rights reserved. Rev. 01 — 30 January 2006 19 of 20 BF1206F Philips Semiconductors Dual N-channel dual gate MOSFET 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 8.1.1 8.1.2 8.2 8.3 8.3.1 8.3.2 8.3.3 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics for amplifier A. . . . . . . 4 Graphs for amplifier A . . . . . . . . . . . . . . . . . . . . 5 Scattering parameters for amplifier A . . . . . . . 10 Noise data for amplifier A . . . . . . . . . . . . . . . . 10 Dynamic characteristics for amplifier B. . . . . . 10 Graphs for amplifier B . . . . . . . . . . . . . . . . . . . 11 Scattering parameters for amplifier B . . . . . . . 16 Noise data for amplifier B . . . . . . . . . . . . . . . . 16 Test information . . . . . . . . . . . . . . . . . . . . . . . . 16 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 19 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Contact information . . . . . . . . . . . . . . . . . . . . 19 © Koninklijke Philips Electronics N.V. 2006 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 30 January 2006 BF1206F_1 Published in The Netherlands