INFINEON BGB420

BGB420, Aug. 2001
BGB 420
Active Biased Transistor
MMIC
W ir e le ss
S i l ic o n D is c r e t e s
N e v e r
s t o p
t h i n k i n g .
Edition 2001-08-10
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 2001
All Rights Reserved.
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circuits, descriptions and charts stated herein.
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Information
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BGB420
Data sheet
Revision History:
2001-08-10
Previous Version:
2000-11-28
Page
Subjects (major changes since last revision)
7
S-Parameter table added
8
Figure “Output Compression Point” added
9
SPICE Model added
For questions on technology, delivery and prices please contact the Infineon
Technologies Offices in Germany or the Infineon Technologies Companies and
Representatives worldwide: see our webpage at http://www.infineon.com
BGB420 Active Biased Transistor
BGB420
Features
• For high gain low noise amplifiers
• Ideal for wideband applications, cellular telephones,
cordless telephones, SAT-TV and high frequency
oscillators
• Gma=17.5dB at 1.8GHz
• Small SOT343 package
• Current easy adjustable by an external resistor
• Open collector output
• Typical supply voltage: 1.4-3.3V
• SIEGET®-25 technology
Bias,4
C,3
Description
SIEGET®-25 NPN Transistor with integrated
biasing for high gain low noise figure
applications. IC can be controlled using IBias
according to IC=10*IBias .
Bias
B,1
E,2
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Marking
Chip
BGB420
SOT343
MBs
T0514
Data sheet
4
2001-08-10
BGB420
Maximum Ratings
Parameter
Symbol
Value
Unit
VCE
3.5
V
Maximum collector-emitter voltage
Maximum collector current
IC
30
mA
Maximum bias current
IBias
3
mA
Maximum emitter-base voltage
VEB
1.5
V
IB
0.7
mA
Ptot
120
mW
Maximum base current
Total power dissipation, TS < 107°C1)
Junction temperature
Tj
150
°C
Operating temperature range
TOP
-40 ..+85
°C
Storage temperature range
TSTG
-65 ... +150
°C
Thermal resistance: junction-soldering point
Rth JS
<270
K/W
Notes:
For detailed symbol description refer to figure 1.
1)
TS is measured on the emitter lead at the soldering point to the PCB
IBias
IC
Bias,4
C,3
Bias
VCE
B,1
VEB
IB
E,2
Fig. 1: Symbol definition
Data sheet
5
2001-08-10
BGB420
ID
RBias
Bias-T
IBias
Bias,4
VD
RF Out
IC
C,3
Bias
B,1
E,2
N.C.
RF In
Bias-T
Fig. 2: Test Circuit for Electrical Characteristics and S-Parameter
Electrical Characteristics at TA=25°C (measured in test circuit specified in fig. 2,
min./max. values verified by random sampling)
Parameter
Symbol
min.
typ.
Maximum available power gain
VD=2V, Ic=20mA, f=1.8GHz
GMA
16.0
17.5
dB
Insertion power gain
VD=2V, Ic=20mA
f=0.9GHz
f=1.8GHz
|S21|2
22
16
dB
Insertion loss
VD=2V, Ic=0mA
f=0.9GHz
f=1.8GHz
IL
21
15
dB
Noise figure (ZS=50Ω)
VD=2V, Ic=5mA
f=0.9GHz
f=1.8GHz
F50Ω
1.3
1.5
Output power at 1dB gain compression
VD=2V, Ic=20mA, f=1.8GHz ZL=ZLOPT
ZL=50Ω
P-1dB
Output third order intercept point
VD=2V, Ic=20mA, f=1.8GHz ZL/S=ZL/SOPT
ZL/S=50Ω
OIP3
Collector-base capacitance
VCB=2V, f=1MHz
CCB
Current Ratio IC/IBias
IBias=0.5mA, VD=3V
CR
Data sheet
6
max.
1.8
2.0
Unit
dB
12
10
dBm
7
22
20
dBm
17
0.16
pF
7
10
13
2001-08-10
BGB420
S-Parameter VD=2V, IC=20mA (see Electrical Characteristics for conditions)
Frequency S11
[GHz]
Mag
S11
Ang
S21
Mag
S21
Ang
S12
Mag
S12
Ang
S22
Mag
S22
Ang
0.1
0.4412
-24.8
35.7070
160.6
0.0078
83.5
0.9225
-14.1
0.2
0.4064
-47.4
31.7670
143.9
0.0157
77.5
0.8321
-26.2
0.4
0.3261
-81.6
23.1980
120.9
0.0261
70.9
0.6380
-41.4
0.6
0.2854
-105.8
17.2590
106.9
0.0351
69.4
0.5012
-49.6
0.8
0.2615
-124.2
13.5050
97.5
0.0444
68.9
0.4100
-54.2
1.0
0.2525
-136.4
10.9810
90.6
0.0537
68.2
0.3435
-57.4
1.2
0.2505
-148.9
9.1940
84.8
0.0628
67.3
0.2946
-60.2
1.4
0.2476
-158.2
7.8930
80.1
0.0720
65.9
0.2571
-62.6
1.6
0.2533
-167.1
6.9070
75.6
0.0819
64.6
0.2228
-64.2
1.8
0.2579
-173.3
6.1460
71.7
0.0915
62.9
0.1966
-66.0
2.0
0.2584
-178.7
5.5300
68.2
0.1009
61.4
0.1751
-66.3
3.0
0.2874
157.6
3.6990
51.6
0.1495
51.7
0.0802
-70.1
4.0
0.3505
139.0
2.7770
36.1
0.1970
40.4
0.0366
-178.8
5.0
0.4061
125.9
2.1930
21.5
0.2392
29.4
0.0913
126.7
6.0
0.4450
117.1
1.8050
8.6
0.2864
18.9
0.1340
99.8
Device Current I
D
= f(V , R
D
)
Bias
30
270Ω
25
820Ω
I D [mA]
20
1.5kΩ
15
2.7kΩ
10
4.7kΩ
5
8.2kΩ
0
0
0.5
1
1.5
2
2.5
3
3.5
VD [V]
Data sheet
7
2001-08-10
BGB420
2
Power Gain |S | , Gma, Gms=f(f)
21
V = 3V, I =20mA
D
Power Gain Gma, Gms=f(I )
C
V = 3V
C
D
30
35
0.3GHz
30
25
Gma/Gms
0.9GHz
Gma, Gms [dB]
|S21|2, Gma, Gms [dB]
25
20
15
|S |2
21
20
1.9GHz
15
2.5GHz
10
10
5
5
0
0
0
1
2
3
4
5
6
0
5
10
15
Matching |S11|,|S22|=f(f)
V = 3V, I =20mA
D
20
25
30
35
IC [mA]
Frequency [GHz]
Output Compression Point
P
= f(I )
−1dB
C
V = 3V, f = 1.8GHz, Z = 50Ω
C
D
0
L
16
14
−5
S11
12
[dBm]
10
−1dB
−15
−20
8
P
|S11|, |S22| [dB]
−10
6
−25
4
S22
−30
2
−35
0
0
1
2
3
4
5
6
0
Data sheet
5
10
15
20
25
30
IC [mA]
Frequency [GHz]
8
2001-08-10
BGB420
SPICE Model
BGB420-Chip
4
3
R2
R1
Q2
Q1
2
Q1
T502
Q2
T502 (area factor: 0.1)
R1
2.7kΩ
R2
27kΩ
1
Transistor Chip Data T502 (Berkley-SPICE 2G.6 Syntax)
.MODEL T502 NPN(
+ IS = 2.0045e-16
+ IKF = 0.48731
+ NR = 1.3325
+ NC = 1.1724
+ RE = 0.31111
+ MJE = 0.46576
+ ITF = 0.001
+ MJC = 0.30232
+ VJS = 0.75
+ XTI = 3
BF = 72.534
ISE = 1.9049e-14
VAR = 19.705
RB = 8.5757
RC = 0.10105
TF = 6.7661e-12
PTF = 0
XCJC = 0.3
MJS = 0
FC = 0.73234)
NF = 1.2432
NE = 2.0518
IKR = 0.69141
IRB = 0.00072983
CJE = 1.8063e-15
XTF = 0.42199
CJC = 2.3453e-13
TR = 2.3249e-09
XTB = 0
VAF = 28.383
BR = 7.8287
ISC = 1.9237e-17
RBM = 3.4849
VJE = 0.8051
VTF = 0.23794
VJC = 0.81969
CJS= 0
EG = 1.11
Package Equivalent Circuit
L2
Bias
C1
L1
CCB
C3
C2
4
B
LBO
LBI
1
BGB420
Chip
3
LCI
LCO
C
2
CBE
CCE
LEI
LEO
0.36
nH
LB0
0.4
nH
LEI
0.3
nH
LEO
0.15
nH
LCI
0.36
nH
LCO
0.4
nH
L1
0.6
nH
L2
0.4
nH
CBE
95
fF
CCB
6
fF
CCE
132
fF
C1
28
fF
C2
88
fF
C3
8
fF
Valid up to 3GHz
E
Data sheet
LBI
9
2001-08-10
BGB420
Typical Application
Voltage
Supply
DC Bypass
L
RF Out
VBias
RBias
IC
IBias
4
C
3
Fig. 3: Typical application circuit.
This proposal demonstrates
how to use the BGB420 as a
Self-Biased Transistor. As for a
discrete Transistor matching
circuits have to be applied. A
good starting point for various
applications are the Application
Notes provided for the BFP420.
BGB420
1
IC=10*IBias
2
C
RF In
Package Outline
2 ±0.2
0.9 ±0.1
B
1.3 ±0.1
0.20
M
0.1 max
B
0.3
1
2
+0.2
acc. to
DIN 6784
2.1±0.1
3
1.25 ±0.1
A
4
0.15 +0.1
-0.05
+0.1
0.6
+0.1
0.20
M
A
GPS05605
Data sheet
10
2001-08-10