VCE IC = = 1700 V 1600 A ABB HiPakTM IGBT Module 5SNA 1600N170100 Doc. No. 5SYA1564-01 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V, Tvj ≥ 25 °C 1700 V IC Tc = 80 °C 1600 A Peak collector current ICM tp = 1 ms, Tc = 80 °C 3200 A 20 V 9100 W IF 1600 A Peak forward current IFRM 3200 A Surge current IFSM 13200 A 10 µs 4000 V 150 °C Total power dissipation DC forward current VGES Ptot -20 Tc = 25 °C, per switch (IGBT) VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 1200 V, VCEM CHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 °C Case temperature Tc -40 125 °C Storage temperature Tstg -40 125 °C Mounting torques 2) min DC collector current Gate-emitter voltage 1) VCES Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 1600N170100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 1700 Collector-emitter 4) saturation voltage VCE sat IC = 1600 A, VGE = 15 V Collector cut-off current ICES VCE = 1700 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) IC = 160 mA, VCE = VGE, Tvj = 25 °C Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance Lσ CE Resistance, terminal-chip RCC’+EE’ 3) 4) typ max Unit V Tvj = 25 °C 2.0 2.3 2.6 V Tvj = 125 °C 2.3 2.6 2.9 V Tvj = 25 °C 8 mA Tvj = 125 °C 80 mA -500 500 nA 4.5 6.5 V IC = 1600 A, VCE = 900 V, VGE = -15 V .. 15 V 14.6 µC 152 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C 14.6 nF 6.4 VCC = 900 V, IC = 1600 A, RG = 0.82 Ω, VGE = ±15 V, Lσ = 50 nH, inductive load Tvj = 25 °C 290 Tvj = 125 °C 300 Tvj = 25 °C 175 Tvj = 125 °C 190 VCC = 900 V, IC = 1600 A, RG = 0.82 Ω, VGE = ±15 V, Lσ = 50 nH, inductive load Tvj = 25 °C 1050 Tvj = 125 °C 1140 Tvj = 25 °C 150 Tvj = 125 °C 170 VCC = 900 V, IC = 1600 A, VGE = ±15 V, RG = 0.82 Ω, Lσ = 50 nH, inductive load Tvj = 25 °C 380 Tvj = 125 °C 530 VCC = 900 V, IC = 1600 A, VGE = ±15 V, RG = 0.82 Ω, Lσ = 50 nH, inductive load Tvj = 25 °C 460 Tvj = 125 °C 590 tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 1200 V, VCEM CHIP ≤ 1700 V ns ns ns ns mJ mJ 7200 A 15 nH TC = 25 °C 0.10 TC = 125 °C 0.13 mΩ Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1564-01 Oct 06 page 2 of 9 5SNA 1600N170100 Diode characteristic values Parameter Forward voltage 6) 5) Symbol Conditions VF IF = 1600 A Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) VCC = 900 V, IF = 1600 A, VGE = ±15 V, RG = 0.82 Ω Lσ = 50 nH inductive load Erec min typ max Tvj = 25 °C 1.65 2.0 Tvj = 125 °C 1.7 2.0 Tvj = 25 °C 1090 Tvj = 125 °C 1400 Tvj = 25 °C 390 Tvj = 125 °C 690 Tvj = 25 °C 620 Tvj = 125 °C 830 Tvj = 25 °C 280 Tvj = 125 °C 480 Unit V A µC ns mJ Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level Thermal properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.011 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.018 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) 2) Conditions min max Unit Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K 0.012 K/W Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K 0.024 K/W For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 Mechanical properties 7) Parameter Symbol Dimensions LxW x Conditions H Typical , see outline drawing min typ max 130 x 140 x 38 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 19 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 32 Mass m 7) typ Unit mm mm 19 mm 32 920 g Thermal and mechanical properties according to IEC 60747 – 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1564-01 Oct 06 page 3 of 9 5SNA 1600N170100 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for industrial level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1564-01 Oct 06 page 4 of 9 5SNA 1600N170100 3200 3200 2800 2800 VCE = 25 V 25 °C 2400 2000 2000 IC [A] IC [A] 125 °C 2400 1600 1600 1200 1200 125 °C 800 800 400 400 25 °C VGE = 15 V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VCE [V] Fig. 1 7 8 9 10 11 12 13 VGE [V] Fig. 2 Typical on-state characteristics, chip level 3200 Typical transfer characteristics, chip level 3200 17V 17V 2800 2800 15V 15V 13V 13V 2400 2400 11V 11V 2000 9V 2000 9V IC [A] IC [A] 6 1600 1600 1200 1200 800 800 400 400 Tvj = 125 °C Tvj = 25 °C 0 0 0 1 2 3 4 5 6 0 VCE [V] Fig. 3 Typical output characteristics, chip level 1 2 3 4 5 6 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1564-01 Oct 06 page 5 of 9 5SNA 1600N170100 1.6 4.0 VCC = 900 V VCEM ≤ 1700 V RG = 0.82 ohm VGE = ±15 V Tvj = 125 °C Lσ = 50 nH 1.4 1.2 3.5 3.0 2.5 Eon, Eoff [J] 1.0 Eon, Eoff [J] VCC = 900 V VCEM ≤ 1700 V IC = 1600 A VGE = ±15 V Tvj = 125 °C Lσ = 50 nH 0.8 Eoff 0.6 Eon Eon 2.0 1.5 0.4 1.0 0.2 0.5 Eoff Esw[mJ] = 1.63 x 10-4 x IC2 +0.275 x I C + 258 0.0 0.0 0 1000 2000 3000 4000 0 1 2 3 4 5 IC [A] Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 8 9 10 11 12 13 Typical switching energies per pulse vs gate resistor VCC = 900 V VCEM ≤ 1700 V IC = 1600 A VGE = ±15 V Tvj = 125 °C Lσ = 50 nH 1 td(on) tf 0.1 VCC = 900 V VCEM ≤ 1700 V RG = 0.82 ohm VGE = ±15 V Tvj = 125 °C Lσ = 50 nH tr 0.01 td(on), tr, td(off), tf [µs] td(off) td(on), tr, td(off), tf [µs] 7 10 10 td(off) td(on) 1 tr tf 0.1 0 1000 2000 3000 4000 0 IC [A] Fig. 7 6 RG [ohm] Typical switching times vs collector current 1 2 3 4 5 6 7 8 9 10 11 12 13 RG [ohm] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1564-01 Oct 06 page 6 of 9 5SNA 1600N170100 1000 20 VCC = 900 V Cies 15 100 VGE [V] C [nF] VCC = 1300 V Coes 10 10 Cres 5 VGE = 0 V fOSC = 1 MHz VOSC = 50 mV IC = 1600 A Tvj = 25 °C 0 1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 2 4 6 Qg [µC] 8 10 12 Typical gate charge characteristics 2.5 VCC ≤ 1200 V, Tvj = 125 °C VGE = ±15 V, RG = 0.82 ohm 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 Fig. 11 500 1000 VCE [V] 1500 2000 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1564-01 Oct 06 page 7 of 9 5SNA 1600N170100 800 VCC = 900 V RG = 0.82 ohm Tvj = 125 °C Lσ = 50 nH 700 1400 600 Erec 1000 Qrr 400 300 -5 Erec 2 Erec [mJ] = -4 x 10 x I F + 0.314 x I F + 95 0 0 0 1000 2000 3000 4000 0 1 IF [A] 2 RG = 6.8 Ω 100 200 RG = 12 Ω 200 400 Fig. 12 RG = 4.7 Ω 600 RG = 0.56 Ω 800 500 RG = 0.82 Ω Qrr 1000 1200 RG = 1.2 Ω 1200 Erec [mJ], Qrr [µC] Erec [mJ], Irr [A], Qrr [µC] 1400 Irr RG = 2.2 Ω 1600 1600 Irr VCC = 900 V IC = 1600 A Tvj = 125 °C Lσ = 50 nH Irr [A] 1800 800 600 400 200 0 3 4 5 6 7 8 9 10 11 di/dt [kA/µs] Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 3200 3600 2800 3200 25°C VCC ≤ 1200 V di/dt ≤ 8 kA/µs Tvj = 125 °C 2800 2400 125°C 2400 IR [A] IF [A] 2000 1600 2000 1600 1200 1200 800 800 400 400 0 0 0 0.5 1 1.5 2 2.5 0 VF [V] Fig. 14 Typical diode forward characteristics, chip level 500 1000 1500 2000 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1564-01 Oct 06 page 8 of 9 5SNA 1600N170100 0.1 Analytical function for transient thermal impedance: Zth(j-c) Diode Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) 0.01 i =1 0.001 i 1 2 3 4 IGBT Zth(j-c) IGBT Ri(K/kW) 7.59 1.8 0.743 0.369 τi(ms) 202 20.3 2.01 0.52 DIODE Zth(j-c) [K/W] IGBT, DIODE n Ri(K/kW) 12.6 2.89 1.3 1.26 τi(ms) 210 29.6 7.01 1.49 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: • 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays • 5SYA 2043-01 Load – cycle capability of HiPaks • 5SZK 9120-00 Specification of environmental class for HiPak (available upon request) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1564-01 Oct 06