VCE IC = = 3300 V 1500 A ABB HiPakTM IGBT Module 5SNA 1500E330300 Doc. No. 5SYA 1595-00 July 07 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V 3300 V DC collector current IC Tc = 85 °C 1500 A Peak collector current ICM tp = 1 ms, Tc = 85 °C 3000 A 20 V 11750 W 1500 A 3000 A 14000 A 10 µs 6000 V 150 °C Total power dissipation DC forward current Peak forward current Surge current VGES Ptot -20 Tc = 25 °C, per switch (IGBT) IF IFRM IFSM VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 2500 V, VCEM CHIP ≤ 3300 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 °C Case temperature Tc -40 125 °C Storage temperature Tstg -40 125 °C Mounting torques 2) min VCES Gate-emitter voltage 1) Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB Document No. 5SYA2039 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNA 1500E330300 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 3300 Collector-emitter 4) saturation voltage VCE sat IC = 1500 A, VGE = 15 V Collector cut-off current ICES VCE = 3300 V, VGE = 0 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C VGE(TO) IC = 240 mA, VCE = VGE, Tvj = 25 °C Gate-emitter threshold voltage Gate charge Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC Module stray inductance Lσ CE Resistance, terminal-chip RCC’+EE’ 3) 4) typ max Unit V Tvj = 25 °C 2.4 Tvj = 125 °C 3.0 V 3.4 V Tvj = 25 °C 12 mA Tvj = 125 °C 120 mA -500 500 nA 4.5 6.5 V IC = 1500 A, VCE = 1800 V, VGE = -15 V .. 15 V 11.0 µC 152 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C 12.2 nF 3.77 VCC = 1800 V, IC = 1500 A, RG = 1.0 Ω, CGE = 220 nF, VGE = ±15 V, Lσ = 100 nH, inductive load Tvj = 25 °C 600 Tvj = 125 °C 570 Tvj = 25 °C 220 Tvj = 125 °C 250 VCC = 1800 V, IC = 1500 A, RG = 1.5 Ω, CGE = 220 nF, VGE = ±15 V, Lσ = 100 nH, inductive load Tvj = 25 °C 1480 Tvj = 125 °C 1680 Tvj = 25 °C 380 Tvj = 125 °C 470 VCC = 1800 V, IC = 1500 A, RG = 1.0 Ω, CGE = 220 nF, VGE = ±15 V, Lσ = 100 nH, inductive load Tvj = 25 °C 1380 Tvj = 125 °C 2000 VCC = 1800 V, IC = 1500 A, RG = 1.5 Ω, CGE = 220 nF, VGE = ±15 V, Lσ = 100 nH, inductive load Tvj = 25 °C 1940 ns ns ns ns mJ mJ Tvj = 125 °C tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 2500 V, VCEM CHIP ≤ 3300 V 2680 6500 A 10 nH TC = 25 °C 0.06 TC = 125 °C 0.085 mΩ Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 2 of 9 5SNA 1500E330300 Diode characteristic values Parameter Forward voltage 6) Reverse recovery current 5) Symbol Conditions VF IF = 1500 A Irr Recovered charge Qrr Reverse recovery time trr Reverse recovery energy 5) 6) VCC = 1800 V, IF = 1500 A, VGE = ±15 V, RG = 1.0 Ω, CGE = 220 nF, Lσ = 100 nH inductive load Erec min typ Tvj = 25 °C 2.0 Tvj = 125 °C 2.1 Tvj = 25 °C 1850 Tvj = 125 °C 2100 Tvj = 25 °C 960 Tvj = 125 °C 1590 Tvj = 25 °C 750 Tvj = 125 °C 1160 Tvj = 25 °C 1200 Tvj = 125 °C 2030 max 2.55 Unit V A µC ns mJ Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level Thermal properties 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT 0.0085 K/W Diode thermal resistance junction to case Rth(j-c)DIODE 0.017 K/W IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) 2) Conditions min max Unit Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K 0.009 K/W Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K 0.018 K/W For detailed mounting instructions refer to ABB Document No. 5SYA2039 Mechanical properties 7) Parameter Symbol Dimensions LxW x Conditions H Typical , see outline drawing min typ max 190 x 140 x 38 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 23 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 33 Mass m 7) typ Unit mm mm 19 mm 32 1380 g Thermal and mechanical properties according to IEC 60747 – 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 3 of 9 5SNA 1500E330300 Electrical configuration Outline drawing 2) Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB Document No. 5SYA2039 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for Industrial Level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 4 of 9 5SNA 1500E330300 3000 3000 VCE = 20 V 2500 2500 25 °C 2000 2000 IC [A] IC [A] 125 °C 1500 1500 125 °C 1000 1000 25 °C 500 500 VGE = 15V 0 0 0 1 2 3 4 5 0 1 2 3 4 5 VCE [V] Fig. 1 Fig. 2 Typical on-state characteristics, chip level 7 8 9 10 11 12 13 Typical transfer characteristics, chip level 3000 3000 19 V 19 V 17 V 17 V 15 V 2500 2500 15 V 13 V 13 V 2000 IC [A] 2000 IC [A] 6 VGE [V] 1500 11 V 1000 11 V 1500 1000 9V 500 500 9V Tvj = 125 °C T vj = 25 °C 0 0 0 1 2 3 4 5 0 V CEsat [V] Fig. 3 Typical output characteristics, chip level 1 2 3 4 5 6 VCEsat [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 5 of 9 5SNA 1500E330300 6 12 VCC = 1800 V VGE = ±15 V R Gon = 1.0 ohm R Goff = 1.5 ohm C GE = 220 nF Tvj = 125 °C Lσ = 100 nH E on, E off [J] 4 10 9 E off 8 E on, E off [J] 5 VCC = 1800 V IC = 1500 A VGE = ±15 V Tvj = 125 °C Lσ = 100 nH C GE = 220 nF 11 E on 3 E on 7 6 5 4 2 E off 3 2 1 1 E sw [J] = 445 x 10 -9 x I C 2 + 1.95 x 10 -3 x I C + 745 x 10 -3 0 0 0 500 1000 1500 2000 2500 0 3000 1 2 3 4 Fig. 5 Typical switching energies per pulse vs collector current Fig. 6 10 7 8 9 10 11 10 VCC = 1800 V IC = 1500 A VGE = ±15 V Tvj = 125 °C L σ = 100 nH C GE = 220 nF 1 tf td(on) VCC = 1800 V RGon = 1.0 ohm RGoff = 1.5 ohm CGE = 220 nF VGE = ±15 V Tvj = 125 °C Lσ = 100 nH 0.1 tr t d(on) , t r, t d(off) , t f [µs] td(on) , t r, t d(off) , t f [µs] 6 Typical switching energies per pulse vs gate resistor t d(off) td(off) td(on) tr 1 tf 0.1 0.01 0 500 1000 1500 2000 2500 0 3000 Typical switching times vs collector current 1 2 3 4 5 6 7 8 9 10 11 R G [ohm] IC [A] Fig. 7 5 R G [ohm] IC [A] Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 6 of 9 5SNA 1500E330300 1000 20 VCC = 1800 V C ies 15 100 VGE = 0V f OSC = 1 MHz VOSC = 50 mV C oes V GE [V] C [nF] VCC = 2400 V 10 10 5 C res IC = 1500 A Tvj = 25 °C 0 1 0 Fig. 9 5 10 15 20 V CE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 1 2 3 4 5 6 Q g [µC] 7 8 9 10 Typical gate charge characteristics 2.5 VCC ≤ 2500 V, Tvj = 125 °C VGE = ±15 V, R G = 1.5 ohm 2 ICpulse / I C 1.5 1 0.5 Chip Module 0 0 500 1000 1500 2000 2500 3000 3500 VCE [V] Fig. 11 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 7 of 9 5SNA 1500E330300 E rec 2500 1000 500 E rec 500 VCC = 1800 V IF = 1500 A Tvj = 125 °C L σ = 100 nH C GE = 220 nF Irr E rec [mJ] = -239 x 10 -6 x I F 2 + 1.45 x IF + 355 0 0 0 500 1000 1500 2000 2500 0 3000 1 2 3 4 5 6 7 di/dt [kA/µs] IF [A] Fig. 12 R G = 1.0 ohm Q rr 1000 R G = 1.2 ohm R G = 3.3 ohm R G = 1.5 ohm VCC = 1800 V VGE = ±15 V R Gon = 1.0 ohm R Goff = 1.5 ohm C GE = 220 nF Tvj = 125 °C L σ = 100 nH R G = 1.8 ohm 1500 1500 R G = 5.6 ohm Q rr Irr R G = 10 ohm E rec [mJ],I rr [A], Q rr [µC] E rec [mJ], I rr [A], Q rr [µC] 2000 R G = 2.2 ohm 2000 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 3000 VCC ≤ 2500 V di/dt ≤ 10 kA/µs Tvj = 125 °C 3000 2500 25 °C 2500 2000 2000 IF [A] IF [A] 125 °C 1500 1000 1500 1000 500 500 0 0 0 0.5 1 1.5 2 2.5 3 0 VF [V] Fig. 14 Typical diode forward characteristics, chip level 500 1000 1500 2000 2500 3000 3500 VR [V] Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA 1595-00 July 07 page 8 of 9 5SNA 1500E330300 0.1 Analytical function for transient thermal impedance: Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) 0.01 i =1 0.001 i 1 2 3 4 IGBT Zth(j-c) IGBT Ri(K/kW) 5.854 1.375 0.641 0.632 τi(ms) 207.4 30.1 7.55 1.57 DIODE Zth(j-h) [K/W] IGBT, DIODE n Zth(j-c) Diode Ri(K/kW) 11.54 2.887 1.229 1.295 τi(ms) 203.6 30.1 7.53 1.57 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: • 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays • 5SYA 2043-01 Load – cycle capability of HiPaks • 5SZK 9120-00 Specification of environmental class for HiPak (available upon request) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA 1595-00 July 07