VCE IC = = 1700 V 800 A ABB HiPakTM IGBT Module 5SNE 0800M170100 Doc. No. 5SYA1590-00 Oct 06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power cycling capability • AlN substrate for low thermal resistance Maximum rated values 1) Parameter Symbol Collector-emitter voltage max Unit VGE = 0 V, Tvj ≥ 25 °C 1700 V IC Tc = 80 °C 800 A Peak collector current ICM tp = 1 ms, Tc = 80 °C 1600 A 20 V 4800 W IF 800 A Peak forward current IFRM 1600 A Surge current IFSM 6600 A 10 µs 4000 V 150 °C Total power dissipation DC forward current VGES Ptot -20 Tc = 25 °C, per switch (IGBT) VR = 0 V, Tvj = 125 °C, tp = 10 ms, half-sinewave IGBT short circuit SOA tpsc VCC = 1200 V, VCEM CHIP ≤ 1700 V VGE ≤ 15 V, Tvj ≤ 125 °C Isolation voltage Visol 1 min, f = 50 Hz Junction temperature Tvj Junction operating temperature Tvj(op) -40 125 °C Case temperature Tc -40 125 °C Storage temperature Tstg -40 125 °C Mounting torques 2) min DC collector current Gate-emitter voltage 1) VCES Conditions 2) Ms Base-heatsink, M6 screws 4 6 Mt1 Main terminals, M8 screws 8 10 Mt2 Auxiliary terminals, M4 screws 2 3 Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Nm 5SNE 0800M170100 IGBT characteristic values 3) Parameter Symbol Conditions min Collector (-emitter) breakdown voltage V(BR)CES VGE = 0 V, IC = 10 mA, Tvj = 25 °C 1700 Collector-emitter 4) saturation voltage VCE sat IC = 800 A, VGE = 15 V 2.6 V Tvj = 125 °C 2.3 2.6 2.9 V Tvj = 25 °C 4 mA Tvj = 125 °C 40 mA -500 500 nA 4.5 6.5 V Gate leakage current IGES VCE = 0 V, VGE = ±20 V, Tvj = 125 °C Qge Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Turn-on delay time td(on) Rise time Turn-off delay time Fall time Turn-on switching energy Turn-off switching energy Short circuit current tr td(off) tf Eon Eoff ISC IC = 80 mA, VCE = VGE, Tvj = 25 °C IC = 800 A, VCE = 900 V, VGE = -15 V .. 15 V µC 76 7.3 nF 3.2 VCC = 900 V, IC = 800 A, RG = 1.2 Ω, VGE = ±15 V, Lσ = 80 nH, inductive load Tvj = 25 °C 485 Tvj = 125 °C 485 Tvj = 25 °C 165 Tvj = 125 °C 170 VCC = 900 V, IC = 800 A, RG = 1.8 Ω, VGE = ±15 V, Lσ = 80 nH, inductive load Tvj = 25 °C 790 Tvj = 125 °C 875 Tvj = 25 °C 160 Tvj = 125 °C 185 VCC = 900 V, IC = 800 A, VGE = ±15 V, RG = 1.2 Ω, Lσ = 80 nH, inductive load Tvj = 25 °C 160 Tvj = 125 °C 250 VCC = 900 V, IC = 800 A, VGE = ±15 V, RG = 1.8 Ω, Lσ = 80 nH, inductive load Tvj = 25 °C 220 Tvj = 125 °C 300 tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C, VCC = 1200 V, VCEM CHIP ≤ 1700 V Lσ CE Leg 1 Resistance, terminal-chip RCC’+EE’ Leg 1 4) 7.3 VCE = 25 V, VGE = 0 V, f = 1 MHz, Tvj = 25 °C Module stray inductance 3) V 2.3 VCE = 1700 V, VGE = 0 V Gate charge Unit 2.0 ICES VGE(TO) max Tvj = 25 °C Collector cut-off current Gate-emitter threshold voltage typ ns ns ns ns mJ mJ 3600 A 24 nH TC = 25 °C 0.18 TC = 125 °C 0.255 mΩ Characteristic values according to IEC 60747 – 9 Collector-emitter saturation voltage is given at chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 2 of 9 5SNE 0800M170100 Diode characteristic values Parameter Forward voltage 5) Symbol VF 6) Reverse recovery current Irr Recovered charge Qrr Reverse recovery time trr Conditions IF = 800 A VCC = 900 V, IF = 800 A, VGE = ±15 V, RG = 1.2 Ω Lσ = 80 nH inductive load Reverse recovery energy Erec Module stray inductance Lσ AE Leg 2 Resistance, terminal-chip RAA’+CC’ Leg 2 5) 6) typ max Tvj = 25 °C 1.65 2.0 Tvj = 125 °C 1.7 2.0 Tvj = 25 °C 560 Tvj = 125 °C 730 Tvj = 25 °C 210 Tvj = 125 °C 385 Tvj = 25 °C 690 Tvj = 125 °C 975 Tvj = 25 °C 150 Tvj = 125 °C 270 0.18 TC = 125 °C 0.255 µC ns mJ nH mΩ 7) Parameter Symbol IGBT thermal resistance junction to case Rth(j-c)IGBT Diode thermal resistance junction to case Rth(j-c)DIODE Conditions min typ max Unit 0.021 K/W per switch IGBT thermal resistance case to heatsink 2) Diode thermal resistance case to heatsink 7) 0.036 K/W Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K 0.024 K/W Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K 0.048 K/W For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 Mechanical properties Parameter Dimensions 7) Symbol x L W x Conditions H Typical , see outline drawing min typ x max x 130 140 38 Clearance distance in air da according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 10 Surface creepage distance ds according to IEC 60664-1 Term. to base: and EN 50124-1 Term. to term: 15 Mass m 7) V A 24 TC = 25 °C Unit Characteristic values according to IEC 60747 – 2 Forward voltage is given at chip level Thermal properties 2) min Unit mm mm 10 mm 15 900 g Thermal and mechanical properties according to IEC 60747 – 15 ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 3 of 9 5SNE 0800M170100 Electrical configuration Leg 1 Leg 2 C2 E1 E1 G1 C1 C1 Outline drawing E2 2) E1 C2 C1 E2 E1 G1 C1 Note: all dimensions are shown in mm 2) For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01 This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX. This product has been designed and qualified for industrial level. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 4 of 9 5SNE 0800M170100 1600 1600 1400 1400 VCE = 25 V 25 °C 1200 1000 1000 IC [A] IC [A] 125 °C 1200 800 800 600 600 400 400 200 125 °C 200 25 °C VGE = 15 V 0 0 0 1 2 3 4 5 0 1 2 3 4 VCE [V] Fig. 1 6 7 8 Fig. 2 Typical on-state characteristics, chip level 10 11 12 Typical transfer characteristics, chip level 1600 17V 17V 1400 1400 15V 15V 13V 13V 1200 1200 11V 11V 1000 9V 1000 IC [A] 9V 800 800 600 600 400 400 200 200 Tvj = 125 °C Tvj = 25 °C 0 0 0 1 2 3 4 5 6 0 VCE [V] Fig. 3 9 VGE [V] 1600 IC [A] 5 Typical output characteristics, chip level 1 2 3 4 5 6 VCE [V] Fig. 4 Typical output characteristics, chip level ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 5 of 9 5SNE 0800M170100 0.90 2.0 VCC = 900 V VGE = ±15 V RGon = 1.2 ohm RGoff = 1.8 ohm Tvj = 125 °C Lσ = 80 nH 0.80 0.70 1.5 Eoff Eon, Eoff [J] Eon, Eoff [J] 0.60 VCC = 900 V IC = 800 A VGE = ±15 V Tvj = 125 °C Lσ = 80 nH Eon 0.50 0.40 Eon 1.0 0.30 0.5 0.20 Eoff 0.10 -9 2 -6 Esw [J] = 347 x 10 x I C + 280 x 10 x I C + 97.7 x 10 -3 0.0 0.00 0 400 800 1200 0 1600 5 10 Typical switching energies per pulse vs collector current Fig. 6 10 Typical switching energies per pulse vs gate resistor VCC = 900 V IC = 800 A VGE = ±15 V Tvj = 125 °C Lσ = 80 nH td(off) td(on), tr, td(off), tf [µs] td(on), tr, td(off), tf [µs] 25 10 1 td(on) tf 0.1 td(off) td(on) 1 tr VCC = 900 V RGon = 1.2 ohm RGoff = 1.8 ohm VGE = ±15 V Tvj = 125 °C Lσ = 80 nH tr tf 0.1 0.01 0 400 800 1200 0 1600 Typical switching times vs collector current 5 10 15 20 25 RG [ohm] IC [A] Fig. 7 20 RG [ohm] IC [A] Fig. 5 15 Fig. 8 Typical switching times vs gate resistor ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 6 of 9 5SNE 0800M170100 20 100 Cies VCC = 900 V 15 10 VGE [V] C [nF] VCC = 1300 V Coes 10 Cres 5 VGE = 0V fOSC = 1 MHz VOSC = 50 mV IC = 800 A Tvj = 25 °C 0 1 0 Fig. 9 5 10 15 20 VCE [V] 25 30 0 35 Typical capacitances vs collector-emitter voltage Fig. 10 1 2 3 Qg [µC] 4 5 6 Typical gate charge characteristics 2.5 VCC ≤ 1200 V, Tvj = 125 °C VGE = ±15 V, RG = 1.8 ohm 2 ICpulse / IC 1.5 1 0.5 Chip Module 0 0 Fig. 11 500 1000 VCE [V] 1500 2000 Turn-off safe operating area (RBSOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 7 of 9 5SNE 0800M170100 Erec [mJ] = -0.105 x 10-3 x I F2 + 352 x 10-3 x I F + 49 400 800 400 800 Irr Irr 100 200 0 400 800 1200 Irr [A] RG = 1.5 ohm RG = 2.2 ohm R G = 1.2 ohm 200 VCC = 900 V IF = 800 A Tvj = 125 °C Lσ = 80 nH 0 0 1600 1 2 3 4 5 di/dt [kA/µs] IF [A] Fig. 12 400 0 0 0 R G = 3.9 ohm Erec VCC = 900 V VGE = ±15 V RG = 1.2 ohm Tvj = 125 °C Lσ = 80 nH 100 200 R G = 8.2 ohm 400 Erec 600 RG = 22 ohm 200 Erec [mJ], Qrr [µC] Qrr Qrr 300 600 Irr [A], Qrr [µC] Erec [mJ] 300 Typical reverse recovery characteristics vs forward current Fig. 13 Typical reverse recovery characteristics vs di/dt 1600 VCC ≤ 1200 V di/dt ≤ 5 kA/µs Tvj = 125 °C 1600 1400 25°C 1200 125°C 1200 IR [A] IF [A] 1000 800 800 600 400 400 200 0 0 0 0.5 1 1.5 2 0 2.5 Typical diode forward characteristics, chip level 1000 1500 2000 VR [V] VF [V] Fig. 14 500 Fig. 15 Safe operating area diode (SOA) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1590-00 Oct 06 page 8 of 9 5SNE 0800M170100 0.1 Analytical function for transient thermal impedance: Zth(j-c) Diode Z th (j-c) (t) = ∑ R i (1 - e -t/τ i ) 0.01 0.001 i 1 2 3 4 IGBT i =1 Ri(K/kW) 15.2 3.6 1.49 0.74 τi(ms) 202 20.3 2.01 0.52 DIODE Zth(j-c) [K/W] IGBT, DIODE n Zth(j-c) IGBT Ri(K/kW) 25.3 5.78 2.6 2.52 τi(ms) 210 29.6 7.01 1.49 0.0001 0.001 Fig. 16 0.01 0.1 t [s] 1 10 Thermal impedance vs time For detailed information refer to: • 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays • 5SYA 2043-01 Load – cycle capability of HiPaks • 5SZK 9120-00 Specification of environmental class for HiPak (available upon request) ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1590-00 Oct 06