ABB 5SNE0800M1701

VCE
IC
=
=
1700 V
800 A
ABB HiPakTM
IGBT Module
5SNE 0800M170100
Doc. No. 5SYA1590-00 Oct 06
• Low-loss, rugged SPT chip-set
• Smooth switching SPT chip-set for
good EMC
• Industry standard package
• High power density
• AlSiC base-plate for high power
cycling capability
• AlN substrate for low thermal
resistance
Maximum rated values
1)
Parameter
Symbol
Collector-emitter voltage
max
Unit
VGE = 0 V, Tvj ≥ 25 °C
1700
V
IC
Tc = 80 °C
800
A
Peak collector current
ICM
tp = 1 ms, Tc = 80 °C
1600
A
20
V
4800
W
IF
800
A
Peak forward current
IFRM
1600
A
Surge current
IFSM
6600
A
10
µs
4000
V
150
°C
Total power dissipation
DC forward current
VGES
Ptot
-20
Tc = 25 °C, per switch (IGBT)
VR = 0 V, Tvj = 125 °C,
tp = 10 ms, half-sinewave
IGBT short circuit SOA
tpsc
VCC = 1200 V, VCEM CHIP ≤ 1700 V
VGE ≤ 15 V, Tvj ≤ 125 °C
Isolation voltage
Visol
1 min, f = 50 Hz
Junction temperature
Tvj
Junction operating temperature
Tvj(op)
-40
125
°C
Case temperature
Tc
-40
125
°C
Storage temperature
Tstg
-40
125
°C
Mounting torques
2)
min
DC collector current
Gate-emitter voltage
1)
VCES
Conditions
2)
Ms
Base-heatsink, M6 screws
4
6
Mt1
Main terminals, M8 screws
8
10
Mt2
Auxiliary terminals, M4 screws
2
3
Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Nm
5SNE 0800M170100
IGBT characteristic values
3)
Parameter
Symbol
Conditions
min
Collector (-emitter)
breakdown voltage
V(BR)CES
VGE = 0 V, IC = 10 mA, Tvj = 25 °C
1700
Collector-emitter 4)
saturation voltage
VCE sat
IC = 800 A, VGE = 15 V
2.6
V
Tvj = 125 °C
2.3
2.6
2.9
V
Tvj = 25 °C
4
mA
Tvj = 125 °C
40
mA
-500
500
nA
4.5
6.5
V
Gate leakage current
IGES
VCE = 0 V, VGE = ±20 V, Tvj = 125 °C
Qge
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
Turn-on switching energy
Turn-off switching energy
Short circuit current
tr
td(off)
tf
Eon
Eoff
ISC
IC = 80 mA, VCE = VGE, Tvj = 25 °C
IC = 800 A, VCE = 900 V,
VGE = -15 V .. 15 V
µC
76
7.3
nF
3.2
VCC = 900 V,
IC = 800 A,
RG = 1.2 Ω,
VGE = ±15 V,
Lσ = 80 nH, inductive load
Tvj = 25 °C
485
Tvj = 125 °C
485
Tvj = 25 °C
165
Tvj = 125 °C
170
VCC = 900 V,
IC = 800 A,
RG = 1.8 Ω,
VGE = ±15 V,
Lσ = 80 nH, inductive load
Tvj = 25 °C
790
Tvj = 125 °C
875
Tvj = 25 °C
160
Tvj = 125 °C
185
VCC = 900 V, IC = 800 A,
VGE = ±15 V, RG = 1.2 Ω,
Lσ = 80 nH, inductive load
Tvj = 25 °C
160
Tvj = 125 °C
250
VCC = 900 V, IC = 800 A,
VGE = ±15 V, RG = 1.8 Ω,
Lσ = 80 nH, inductive load
Tvj = 25 °C
220
Tvj = 125 °C
300
tpsc ≤ 10 μs, VGE = 15 V, Tvj = 125 °C,
VCC = 1200 V, VCEM CHIP ≤ 1700 V
Lσ CE
Leg 1
Resistance, terminal-chip
RCC’+EE’
Leg 1
4)
7.3
VCE = 25 V, VGE = 0 V, f = 1 MHz,
Tvj = 25 °C
Module stray inductance
3)
V
2.3
VCE = 1700 V, VGE = 0 V
Gate charge
Unit
2.0
ICES
VGE(TO)
max
Tvj = 25 °C
Collector cut-off current
Gate-emitter threshold voltage
typ
ns
ns
ns
ns
mJ
mJ
3600
A
24
nH
TC = 25 °C
0.18
TC = 125 °C
0.255
mΩ
Characteristic values according to IEC 60747 – 9
Collector-emitter saturation voltage is given at chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06
page 2 of 9
5SNE 0800M170100
Diode characteristic values
Parameter
Forward voltage
5)
Symbol
VF
6)
Reverse recovery current
Irr
Recovered charge
Qrr
Reverse recovery time
trr
Conditions
IF = 800 A
VCC = 900 V,
IF = 800 A,
VGE = ±15 V,
RG = 1.2 Ω
Lσ = 80 nH
inductive load
Reverse recovery energy
Erec
Module stray inductance
Lσ AE
Leg 2
Resistance, terminal-chip
RAA’+CC’
Leg 2
5)
6)
typ
max
Tvj = 25 °C
1.65
2.0
Tvj = 125 °C
1.7
2.0
Tvj = 25 °C
560
Tvj = 125 °C
730
Tvj = 25 °C
210
Tvj = 125 °C
385
Tvj = 25 °C
690
Tvj = 125 °C
975
Tvj = 25 °C
150
Tvj = 125 °C
270
0.18
TC = 125 °C
0.255
µC
ns
mJ
nH
mΩ
7)
Parameter
Symbol
IGBT thermal resistance
junction to case
Rth(j-c)IGBT
Diode thermal resistance
junction to case
Rth(j-c)DIODE
Conditions
min
typ
max
Unit
0.021 K/W
per switch
IGBT thermal resistance
case to heatsink
2)
Diode thermal resistance
case to heatsink
7)
0.036 K/W
Rth(c-s)IGBT IGBT per switch, λ grease = 1W/m x K
0.024
K/W
Rth(c-s)DIODE Diode per switch, λ grease = 1W/m x K
0.048
K/W
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
Mechanical properties
Parameter
Dimensions
7)
Symbol
x
L W
x
Conditions
H Typical , see outline drawing
min
typ
x
max
x
130 140 38
Clearance distance in air
da
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
10
Surface creepage distance
ds
according to IEC 60664-1 Term. to base:
and EN 50124-1
Term. to term:
15
Mass
m
7)
V
A
24
TC = 25 °C
Unit
Characteristic values according to IEC 60747 – 2
Forward voltage is given at chip level
Thermal properties
2)
min
Unit
mm
mm
10
mm
15
900
g
Thermal and mechanical properties according to IEC 60747 – 15
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06
page 3 of 9
5SNE 0800M170100
Electrical configuration
Leg 1
Leg 2
C2
E1
E1
G1
C1
C1
Outline drawing
E2
2)
E1
C2
C1
E2
E1
G1
C1
Note: all dimensions are shown in mm
2)
For detailed mounting instructions refer to ABB document no. 5SYA 2039 - 01
This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, chap. IX.
This product has been designed and qualified for industrial level.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06
page 4 of 9
5SNE 0800M170100
1600
1600
1400
1400
VCE = 25 V
25 °C
1200
1000
1000
IC [A]
IC [A]
125 °C
1200
800
800
600
600
400
400
200
125 °C
200
25 °C
VGE = 15 V
0
0
0
1
2
3
4
5
0
1
2
3
4
VCE [V]
Fig. 1
6
7
8
Fig. 2
Typical on-state characteristics, chip level
10 11 12
Typical transfer characteristics, chip level
1600
17V
17V
1400
1400
15V
15V
13V
13V
1200
1200
11V
11V
1000
9V
1000
IC [A]
9V
800
800
600
600
400
400
200
200
Tvj = 125 °C
Tvj = 25 °C
0
0
0
1
2
3
4
5
6
0
VCE [V]
Fig. 3
9
VGE [V]
1600
IC [A]
5
Typical output characteristics, chip level
1
2
3
4
5
6
VCE [V]
Fig. 4
Typical output characteristics, chip level
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06
page 5 of 9
5SNE 0800M170100
0.90
2.0
VCC = 900 V
VGE = ±15 V
RGon = 1.2 ohm
RGoff = 1.8 ohm
Tvj = 125 °C
Lσ = 80 nH
0.80
0.70
1.5
Eoff
Eon, Eoff [J]
Eon, Eoff [J]
0.60
VCC = 900 V
IC = 800 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 80 nH
Eon
0.50
0.40
Eon
1.0
0.30
0.5
0.20
Eoff
0.10
-9
2
-6
Esw [J] = 347 x 10 x I C + 280 x 10 x I C + 97.7 x 10
-3
0.0
0.00
0
400
800
1200
0
1600
5
10
Typical switching energies per pulse
vs collector current
Fig. 6
10
Typical switching energies per pulse
vs gate resistor
VCC = 900 V
IC = 800 A
VGE = ±15 V
Tvj = 125 °C
Lσ = 80 nH
td(off)
td(on), tr, td(off), tf [µs]
td(on), tr, td(off), tf [µs]
25
10
1
td(on)
tf
0.1
td(off)
td(on)
1
tr
VCC = 900 V
RGon = 1.2 ohm
RGoff = 1.8 ohm
VGE = ±15 V
Tvj = 125 °C
Lσ = 80 nH
tr
tf
0.1
0.01
0
400
800
1200
0
1600
Typical switching times
vs collector current
5
10
15
20
25
RG [ohm]
IC [A]
Fig. 7
20
RG [ohm]
IC [A]
Fig. 5
15
Fig. 8
Typical switching times
vs gate resistor
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06
page 6 of 9
5SNE 0800M170100
20
100
Cies
VCC = 900 V
15
10
VGE [V]
C [nF]
VCC = 1300 V
Coes
10
Cres
5
VGE = 0V
fOSC = 1 MHz
VOSC = 50 mV
IC = 800 A
Tvj = 25 °C
0
1
0
Fig. 9
5
10
15
20
VCE [V]
25
30
0
35
Typical capacitances
vs collector-emitter voltage
Fig. 10
1
2
3
Qg [µC]
4
5
6
Typical gate charge characteristics
2.5
VCC ≤ 1200 V, Tvj = 125 °C
VGE = ±15 V, RG = 1.8 ohm
2
ICpulse / IC
1.5
1
0.5
Chip
Module
0
0
Fig. 11
500
1000
VCE [V]
1500
2000
Turn-off safe operating area (RBSOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06
page 7 of 9
5SNE 0800M170100
Erec [mJ] = -0.105 x 10-3 x I F2 + 352 x 10-3 x I F + 49
400
800
400
800
Irr
Irr
100
200
0
400
800
1200
Irr [A]
RG = 1.5 ohm
RG = 2.2 ohm
R G = 1.2 ohm
200
VCC = 900 V
IF = 800 A
Tvj = 125 °C
Lσ = 80 nH
0
0
1600
1
2
3
4
5
di/dt [kA/µs]
IF [A]
Fig. 12
400
0
0
0
R G = 3.9 ohm
Erec
VCC = 900 V
VGE = ±15 V
RG = 1.2 ohm
Tvj = 125 °C
Lσ = 80 nH
100
200
R G = 8.2 ohm
400
Erec
600
RG = 22 ohm
200
Erec [mJ], Qrr [µC]
Qrr
Qrr
300
600
Irr [A], Qrr [µC]
Erec [mJ]
300
Typical reverse recovery characteristics
vs forward current
Fig. 13
Typical reverse recovery characteristics
vs di/dt
1600
VCC ≤ 1200 V
di/dt ≤ 5 kA/µs
Tvj = 125 °C
1600
1400
25°C
1200
125°C
1200
IR [A]
IF [A]
1000
800
800
600
400
400
200
0
0
0
0.5
1
1.5
2
0
2.5
Typical diode forward characteristics,
chip level
1000
1500
2000
VR [V]
VF [V]
Fig. 14
500
Fig. 15
Safe operating area diode (SOA)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1590-00 Oct 06
page 8 of 9
5SNE 0800M170100
0.1
Analytical function for transient thermal
impedance:
Zth(j-c) Diode
Z th (j-c) (t) = ∑ R i (1 - e -t/τ i )
0.01
0.001
i
1
2
3
4
IGBT
i =1
Ri(K/kW)
15.2
3.6
1.49
0.74
τi(ms)
202
20.3
2.01
0.52
DIODE
Zth(j-c) [K/W] IGBT, DIODE
n
Zth(j-c) IGBT
Ri(K/kW)
25.3
5.78
2.6
2.52
τi(ms)
210
29.6
7.01
1.49
0.0001
0.001
Fig. 16
0.01
0.1
t [s]
1
10
Thermal impedance vs time
For detailed information refer to:
• 5SYA 2042-02 Failure rates of HiPak modules due to cosmic rays
• 5SYA 2043-01 Load – cycle capability of HiPaks
• 5SZK 9120-00 Specification of environmental class for HiPak (available upon request)
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone
Fax
Email
Internet
+41 (0)58 586 1419
+41 (0)58 586 1306
abbsem@ch.abb.com
www.abb.com/semiconductors
Doc. No. 5SYA1590-00 Oct 06