CYSTEKEC BTD1768BA3

CYStech Electronics Corp.
Spec. No. : C304A3-B
Issued Date : 2006.08.21
Revised Date :
Page No. : 1/4
General Purpose NPN Epitaxial Planar Transistor
BTD1768BA3
Description
The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose
application.
Features
• Low collector saturation voltage
• High breakdown voltage, VCEO=80V (min.)
• High collector current, IC(max)=1A (DC)
• Pb-free package
Symbol
Outline
BTD1768BA3
TO-92
B:Base
C:Collector
E:Emitter
E BC
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
100
80
5
1
2 (Note)
750
167
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
BTD1768BA3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C304A3-B
Issued Date : 2006.08.21
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*hFE
fT
Cob
Min.
100
80
5
120
-
Typ.
0.15
100
20
Max.
1
1
0.4
560
-
Unit
V
V
V
μA
μA
V
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=80V, IE=0
VEB=4V, IC=0
IC=500mA, IB=20mA
VCE=3V, IC=100mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank
Q
R
S
Range
120~270
180~390
270~560
Ordering Information
Device
BTD1768BA3
BTD1768BA3
Package
TO-92
(Pb-free)
Shipping
Marking
1000 pcs / Bag, 10 Bags/Box
D1768
CYStek Product Specification
Spec. No. : C304A3-B
Issued Date : 2006.08.21
Revised Date :
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
Saturation Voltage---(mV)
Current Gain---HFE
[email protected]=3V
100
[email protected]=2V
10
[email protected]=20IB
100
[email protected]=20IB
10
1
10
100
1000
1
Collector Current---IC(mA)
10
100
1000
Collector Current---IC(mA)
On Voltage vs Collector Current
Power Derating Curve
800
Power Dissipation---PD(mW)
On Voltage---(mV)
1000
VBE(on)@VCE=2V
100
700
600
500
400
300
200
100
0
1
10
100
Collector Current---IC(mA)
BTD1768BA3
1000
0
50
100
150
200
Ambient Temperature---TA(℃)
CYStek Product Specification
Spec. No. : C304A3-B
Issued Date : 2006.08.21
Revised Date :
Page No. : 4/4
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
3
D1768
α3
C
D
H
I
G
α1
Style: Pin 1.Emitter 2.Base 3.Collector
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTD1768BA3
CYStek Product Specification