2SD874A TRANSISTOR (NPN) FEATURES SOT-89 z Large collector power dissipation PC z Low collector-emitter saturation voltage VCE(sat) Complementary to 2SB766A z 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 0.5 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ 1 2 3. EMITTER 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=2mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=10μA,IC=0 5 V Collector cut-off current ICBO VCB=20V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V,IC=0 0.1 μA hFE(1) VCE=10V,IC=500mA 85 hFE(2) VCE=5V,IC=1A 50 340 DC current gain Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=50mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=500mA,IB=50mA 1.2 V fT Transition frequency Cob Collector output capacitance CLASSIFICATION OF Rank Range Marking VCE=10V,IC=50mA,f=200MHz 200 MHz VCB=10V,IE=0,f=1MHz 20 pF hFE(1) Q R S 85-170 120-240 170-340 YQ YR YS １ JinYu semiconductor www.htsemi.com 2SD874A ２ JinYu semiconductor www.htsemi.com