HTSEMI S9012

S901 2
SOT-23
TRANSISTOR(PNP)
FEATURES
Complementary to S9013
z
Excellent hFE linearity
z
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: 2T1
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-500
mA
PC
Collector Power Dissipation
300
mW
Tj
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
Collector-base breakdown voltage
V(BR)CBO
IC= -100μA, IE=0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -1mA, IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-0.1
μA
Collector cut-off current
ICEO
VCE=-20V, IB=0
-0.1
μA
Emitter cut-off current
IEBO
VEB= -5V, IC=0
-0.1
μA
DC current gain
hFE
VCE=-1V, IC= -50mA
Collector-emitter saturation voltage
VCE(sat)
IC=-500mA, IB= -50mA
-0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA, IB= -50mA
-1.2
V
Transition frequency
fT
Collector output capacitance
Cob
VCE=-6V,
conditions
IC= -20mA
f=30MHz
MIN
TYP
MAX
120
400
150
MHz
VCB=-10V,IE=0,f=1MHz
5
CLASSIFICATION OF hFE
Rank
L
H
J
Range
120-200
200-350
300-400
1 JinYu
semiconductor
UNIT
www.htsemi.com
Date:2011/05
pF
S901 2
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05