BLM9926

Pb Free Product
BLM9926
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The BLM9926 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =20V,ID =6A
Schematic diagram
RDS(ON) < 30mΩ @ VGS=4.5V
RDS(ON) < 40mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
Application
●
Power switching application
●
Hard Switched and High Frequency Circuits
●
Uninterruptible Power Supply
Marking and pin Assignment
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
9926
BLM9926
SOP-8
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
Unit
20
V
±12
V
ID
6
A
ID (100℃)
3.8
A
Pulsed Drain Current
IDM
25
A
Maximum Power Dissipation
PD
1.25
W
TJ,TSTG
-55 To 150
℃
RθJA
100
℃/W
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
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BLM9926
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
22
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.5
1.2
V
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=6A
-
26
30
VGS=2.5V, ID=5A
-
36
40
VDS=5V,ID=6A
20
-
-
S
-
640
-
PF
-
140
-
PF
-
80
-
PF
-
8
-
nS
On Characteristics (Note 3)
Forward Transconductance
gFS
mΩ
Dynamic Characteristics (Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS=10V,VGS=0V,
F=1.0MHz
Switching Characteristics (Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=10V,ID=1A
-
9
-
nS
td(off)
VGEN=4.5V,RG=6Ω
-
15
-
nS
-
4
-
nS
-
10
-
nC
-
1.5
-
nC
-
1.6
-
nC
-
-
1.2
V
-
-
6
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=10V,ID=3A,
VGS=4.5V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
VGS=0V,IS=1.7A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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BLM9926
Test circuit
1）EAS test Circuits
2）Gate charge test Circuit:
3）Switch Time Test Circuit：
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BLM9926
ID- Drain Current (A)
Normalized On-Resistance
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves)
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 4 Rdson-JunctionTemperature
ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Rdson On-Resistance(Ω)
Vgs Gate-Source Voltage (V)
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
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Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
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Pb Free Product
Normalized BVdss
C Capacitance (pF)
BLM9926
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Figure 9
BVDSS vs Junction Temperature
Vth (V) Variance
ID- Drain Current (A)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Safe Operation Area
Figure 10
VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Figure 8
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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BLM9926
SOP-8 PACKAGE IN FORMATION
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