2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector −Emitter Voltage VCEO 80 Vdc Collector −Base Voltage VCBO 140 Vdc Emitter −Base Voltage VEBO 7.0 Vdc Collector Current − Continuous IC 1.0 Adc Total Device Dissipation @ TA = 25°C 2N3019, 2N3019S 2N3700 PT Total Device Dissipation @ TC = 25°C 2N3019, 2N3019S 2N3700 PT Operating and Storage Junction Temperature Range TJ, Tstg Symbol Thermal Resistance, Junction to Ambient 2N3019, 2N3019S 2N3700 RqJA Thermal Resistance, Junction to Case 2N3019, 2N3019S 2N3700 RqJC 1 EMITTER mW 800 500 W 5.0 1.0 −65 to +200 °C Max Unit THERMAL CHARACTERISTICS Characteristic 2 BASE TO−5 CASE 205AA STYLE 1 2N3019 TO−39 CASE 205AB STYLE 1 2N3019S TO−18 CASE 206AA STYLE 1 2N3700 °C/W 195 325 °C/W 30 150 ORDERING INFORMATION Device Package Shipping TO−5 Bulk TO−39 Bulk TO−18 Bulk JAN2N3019 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. JANTX2N3019 JANTXV2N3019 JAN2N3019S JANTX2N3019S JANTXV2N3019S JAN2N3700 JANTX2N3700 JANTXV2N3700 © Semiconductor Components Industries, LLC, 2012 August, 2012 − Rev. 2 1 Publication Order Number: 2N3019/D 2N3019, 2N3019S, 2N3700 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max Unit 80 − − − 10 10 nAdc mAdc − 10 nAdc − 10 mAdc 50 90 100 50 15 300 − 300 300 − − − 0.2 0.5 − 1.1 5.0 20 80 400 − 12 − 60 − 4.0 − 400 − 30 OFF CHARACTERISTICS V(BR)CEO Collector −Emitter Breakdown Voltage (IC = 30 mAdc) Emitter−Base Cutoff Current (VEB = 5.0 Vdc) (VEB = 7.0 Vdc) IEBO Collector−Emitter Cutoff Current (VCE = 90 Vdc) ICEO Collector−Base Cutoff Current (VCB = 140 Vdc) ICBO Vdc ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 150 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) (IC = 1.0 Adc, VCE = 10 Vdc) hFE Collector −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) Base −Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) VBE(sat) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Magnitude of Small−Signal Current Gain (IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz) |hfe| Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 5 Vdc, f = 1 kHz) hfe Output Capacitance (VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cibo Noise Figure (VCE = 10 Vdc, IC = 100 mAdc, Rg = 1 kW, PBW = 200 Hz) NF Collector−Base Time Constant (VCB = 10 Vdc, IC = 10 mAdc, f = 79.8 MHz) r’b,CC − − pF pF dB ps SWITCHING CHARACTERISTICS Pulse Response (Reference Figure in MIL−PRF−19500/391) ton + toff 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 ns 2N3019, 2N3019S, 2N3700 PACKAGE DIMENSIONS TO−5 3−Lead CASE 205AA ISSUE B B U P C L R NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. A B DETAIL X F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M N H 2 1 3 J M LEAD IDENTIFICATION DETAIL C DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.53 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 38.10 44.45 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --- INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.021 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 1.500 1.750 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR TO−39 3−Lead CASE 205AB ISSUE A B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL http://onsemi.com 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. 8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 8.89 9.40 8.00 8.51 6.10 6.60 0.41 0.48 0.23 3.18 0.41 0.48 0.71 0.86 0.73 1.02 12.70 14.73 6.35 --45_BSC 5.08 BSC --1.27 1.37 BSC --0.76 2.54 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR INCHES MIN MAX 0.350 0.370 0.315 0.335 0.240 0.260 0.016 0.019 0.009 0.125 0.016 0.019 0.028 0.034 0.029 0.040 0.500 0.580 0.250 --45 _BSC 0.200 BSC --0.050 0.054 BSC --0.030 0.100 --- 2N3019, 2N3019S, 2N3700 PACKAGE DIMENSIONS TO−18 3−Lead CASE 206AA ISSUE A B A B DETAIL X U P C L R F U A SEATING PLANE K NOTE 5 E T NOTE 7 D NOTES 4 & 6 0.007 (0.18MM) A B S C 3X DETAIL X M N H 2 1 3 J M C LEAD IDENTIFICATION DETAIL NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE. 4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE PLANE DEFINED BY DIMENSION R. 5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L. 6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K. 7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN SIONS A, B, AND T. DIM A B C D E F H J K L M N P R T U MILLIMETERS MIN MAX 5.31 5.84 4.52 4.95 4.32 5.33 0.41 0.53 --0.76 0.41 0.48 0.91 1.17 0.71 1.22 12.70 19.05 6.35 --45_BSC 2.54 BSC --1.27 1.37 BSC --0.76 2.54 --- INCHES MIN MAX 0.209 0.230 0.178 0.195 0.170 0.210 0.016 0.021 --0.030 0.016 0.019 0.036 0.046 0.028 0.048 0.500 0.750 0.250 --45 _BSC 0.100 BSC --0.050 0.054 BSC --0.030 0.100 --- STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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