PRELIMINARY < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .............….......................… 100A Collector-emitter voltage V CES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ●Flat base Type ●Copper base plate (non-plating) ●Tin plating pin terminals ●RoHS Directive compliant sevenpack (3φ Inverter+Chopper Brake) ●Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, etc. OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm TERMINAL t=0.8 SECTION A INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension GUP(20) GVP(16) GWP(12) EUP(19) EVP(15) EWP(11) U(1) N(22) NTC P(21) V(2) W(3) B(4) GUN(18) GVP(14) GWN(10) GB(6) EUN(17) EVP(13) EWN(9) EB(5) Publication Date : December 2013 1 0.5 to over 3 over 6 TH1(7) TH2(8) Tolerance 3 ±0.2 to 6 ±0.3 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ± 20 V IC Item DC, TC=107 °C Collector current ICRM Ptot (Note1) IERM (Note1) (Note2, 4) 100 (Note3) 200 Pulse, Repetitive Total power dissipation IE Conditions TC=25 °C DC Emitter current (Note2, 4) A 625 (Note2) W 100 (Note3) Pulse, Repetitive A 200 BRAKE PART IGBT/DIODE Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ± 20 V IC ICRM Item Conditions (Note2, 4) DC, TC=113 °C Collector current Total power dissipation TC=25 °C VRRM Repetitive peak reverse voltage G-E short-circuited IFRM DC Forward current A 100 (Note2, 4) Ptot IF 50 (Note3) Pulse, Repetitive (Note2) 340 W 1200 V 50 Pulse, Repetitive (Note3) A 100 MODULE Rating Unit Visol Symbol Isolation voltage Item Terminals to base plate, RMS, f=60 Hz, AC 1 min Conditions 4000 V Tjmax Maximum junction temperature Instantaneous event (overload) 175 TCmax Maximum case temperature (Note4) 125 Tjop Operating junction temperature Continuous operation (under switching) -40 ~ +150 Tstg Storage temperature - -40 ~ +125 °C °C ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=10 mA, VCE=10 V 5.4 6.0 6.6 V T j =25 °C - 1.80 2.25 Refer to the figure of test circuit T j =125 °C - 2.00 - (Note5) IC=100 A, VGE=15 V, VCEsat (Terminal) Collector-emitter saturation voltage VCEsat (Chip) Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time T j =150 °C - 2.05 - IC=100 A, T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - (Note5) T j =150 °C - 1.95 - - - 10 - - 2.0 - - 0.17 - 210 - - - 300 - - 200 - - 600 - - 300 VCE=10 V, G-E short-circuited VCC=600 V, IC=100 A, VGE=15 V VCC=600 V, IC=100 A, VGE=±15 V, RG=6.2 Ω, Inductive load Publication Date : December 2013 2 V V nF nC ns < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified) INVERTER PART IGBT/DIODE Symbol Item IE=100 A, G-E short-circuited, (Note1) VEC (Terminal) Emitter-collector voltage (Note1) VEC (Chip) Limits Conditions Min. Typ. Max. 3.40 T j =25 °C - 2.60 Refer to the figure of test circuit T j =125 °C - 2.16 - (Note5) T j =150 °C - 2.10 - IE=100 A, T j =25 °C - 2.50 3.30 G-E short-circuited, T j =125 °C - 2.06 - (Note5) T j =150 °C Unit V V - 2.00 - trr (Note1) Reverse recovery time VCC=600 V, IE=100 A, VGE=±15 V, - - 300 ns Qrr (Note1) Reverse recovery charge RG=6.2 Ω, Inductive load - 2.7 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=100 A, - 5.9 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=6.2 Ω, T j =150 °C, - 9.7 - Reverse recovery energy per pulse Inductive load - 9.7 - mJ R CC'+EE' Internal lead resistance Main terminals-chip, per switch, TC=25 °C (Note4) - - 0.8 mΩ rg Internal gate resistance Per switch - 0 - Ω (Note1) Err mJ BRAKE PART IGBT/DIODE Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=5 mA, VCE=10 V V 5.4 6.0 6.6 T j =25 °C - 1.80 2.25 Refer to the figure of test circuit T j =125 °C - 2.00 - (Note5) T j =150 °C - 2.05 - T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - (Note5) T j =150 °C - 1.95 - - - 5.0 - - 1.0 - - 0.08 - 105 - - - 300 - - 200 - - 600 - - 300 - - 1.0 IC=50 A, VGE=15 V, VCEsat (Terminal) Collector-emitter saturation voltage VCEsat (Chip) Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time IRRM Repetitive peak reverse current IC=50 A, VCE=10 V, G-E short-circuited VCC=600 V, IC=50 A, VGE=15 V VCC=600 V, IC=50 A, VGE=±15 V, RG=13 Ω, Inductive load VR=VRRM, G-E short-circuited IF=50 A, VF (Terminal) Forward voltage VF (Chip) T j =25 °C - 2.60 3.40 Refer to the figure of test circuit T j =125 °C - 2.16 - (Note5) T j =150 °C - 2.10 - IF=50 A, (Note5) T j =25 °C - 2.50 3.30 T j =125 °C - 2.06 - T j =150 °C V V nF nC ns mA V V - 2.00 - trr Reverse recovery time VCC=600 V, IE=50 A, VGE=±15 V, - - 300 ns Qrr Reverse recovery charge RG=13 Ω, Inductive load - 1.3 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=50 A, - 3.2 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=13 Ω, T j =150 °C, - 5.0 - Err Reverse recovery energy per pulse Inductive load - 4.4 - mJ rg Internal gate resistance - - 0 - Ω Publication Date : December 2013 3 mJ < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified) NTC THERMISTOR PART Symbol Item Limits Conditions (Note4) R25 Zero-power resistance TC=25 °C ΔR/R Deviation of resistance R100=493 Ω, TC=100 °C B(25/50) B-constant Approximate by equation P25 Power dissipation TC=25 °C Typ. 4.85 5.00 5.15 kΩ -7.3 - +7.8 % - 3375 - K - - 10 mW (Note4) (Note6) (Note4) Max. Unit Min. THERMAL RESISTANCE CHARACTERISTICS Symbol Item Limits Conditions Min. (Note4) Rth(j-c)Q Junction to case, per Inverter IGBT Rth(j-c)D Junction to case, per Inverter DIODE Thermal resistance Rth(j-c)Q Junction to case, per Brake IGBT Rth(j-c)D Junction to case, per Brake DIODE Rth(c-s) (Note4) (Note4) (Note4) Case to heat sink, per 1 module, Thermal grease applied (Note4, 7) Contact thermal resistance Typ. Max. - - 0.24 - - 0.37 - - 0.44 - - 0.66 - 15 - Unit K/W K/W K/kW MECHANICAL CHARACTERISTICS Symbol Item Limits Conditions Min. Typ. Max. Unit Mt Mounting torque Main terminals M 5 screw 2.5 3.0 3.5 N·m Ms Mounting torque Mounting to heat sink M 5 screw 2.5 3.0 3.5 N·m ds Creepage distance 17 - - 20.1 - - da Clearance m mass - ec Flatness of base plate On the centerline X, Y Terminal to terminal Terminal to base plate Terminal to terminal Terminal to base plate 10 - - 14.8 - - - 370 - g ±0 - +100 μm (Note8) Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE). 2. Junction temperature (T j ) should not increase beyond T j m a x rating. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. R 1 1 6. B( 25 / 50) = ln( 25 ) /( ), − R 50 T25 T50 -:Concave +:Convex R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K] 7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X mounting side mounting side mounting side -:Concave +:Convex 9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "φ2.6×10 or φ2.6×12 B1 tapping screw" The length of the screw depends on the thickness (t1.6~t2.0) of the PCB. Publication Date : December 2013 4 mm mm < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS Symbol Item VCC Limits Conditions Unit Min. Typ. Max. - 600 850 V 13.5 15.0 16.5 V Inverter IGBT 6.2 - 62 Brake IGBT 13 - 130 Ω (DC) Supply voltage Applied across P-N terminals VGEon Gate (-emitter drive) voltage Applied across GB-EB/ G*P-E*P/G*N-E*N(*=U, V, W) terminals RG External gate resistance Per switch CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm Tr*P/Tr*N/TrBr: IGBT, Di*P/Di*N: DIODE (*=U/V/W), DiBr: Brake DIODE, Th: NTC thermistor TEST CIRCUIT AND WAVEFORMS ～ ～ iE *: U, V, W vGE P 0V iE 0 IE + * iC VCC 90 % RG 0A t Irr vCE 0 trr ～ ～ E*P +VGE Q r r =0.5×I r r ×t r r t Load G*P -VGE 90 % 0.5×I r r G*N vGE 10% iC -VGE 0A E*N N tr td(on) tf td(off) Switching test circuit and waveforms t t r r , Q r r characteristics test waveform iE iC iC ICM vCE VCC 0.1×ICM 0.1×VCC 0 ti vEC VCC vCE VCC 0.1×VCC t IEM ICM 0.02×ICM 0 ti t 0A t 0V t ti IGBT Turn-on switching energy IGBT Turn-off switching energy DIODE Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : December 2013 5 < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT 21 21 VGE=15V VGE=15V IC 20 VGE=15V IC 16 19 V 21 V 15 1 3 Shortcircuited Shortcircuited 14 18 17 22 13 21 10 22 9 Shortcircuited 20 V 12 V 15 1 13 Gate-emitter GVP-EVP GVN-EVN, short-circuited GWP-EWP, GWN-EWN, GB-EB VGE=15V IC 10 22 9 Gate-emitter GUP-EUP, GUN-EUN, short-circuited GWP-EWP, GWN-EWN, GB-EB UP / UN IGBT 4 VGE=15V IC 14 22 V 3 VGE=15V IC 18 V 11 2 VGE=15V 21 Shortcircuited 16 19 22 21 21 Shortcircuited 17 11 V 2 Shortcircuited IC 12 22 IC 6 5 22 Gate-emitter GUP-EUP, GUN-EUN, short-circuited GVP-EVP, GVN-EVN, GB-EB VP / VN IGBT Brake IGBT WP / WN IGBT V CE s a t characteristics test circuit 21 21 Shortcircuited IE 20 Shortcircuited IE 16 19 V 21 Shortcircuited V 15 1 3 Shortcircuited 18 Shortcircuited 14 22 13 21 10 22 9 21 Shortcircuited 20 V V IE Shortcircuited Shortcircuited IE 13 IE 6 10 22 9 Gate-emitter GUP-EUP, GUN-EUN, short-circuited GWP-EWP, GWN-EWN, GB-EB UP / UN DIODE 4 3 14 22 V 11 2 18 Gate-emitter GVP-EVP GVN-EVN, short-circuited GWP-EWP, GWN-EWN, GB-EB IE 12 15 1 Shortcircuited 21 Shortcircuited 16 19 22 21 Shortcircuited 17 11 V 2 Shortcircuited 17 IE 12 22 5 22 Gate-emitter GUP-EUP, GUN-EUN, short-circuited GVP-EVP, GVN-EVN, GB-EB VP / VN DIODE WP / WN DIODE VEC / VF characteristics test circuit Publication Date : December 2013 6 Brake DIODE V < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 °C VGE=15 V (Chip) (V) 200 15 V VCEsat VGE=20 V COLLECTOR-EMITTER SATURATION VOLTAGE 150 COLLECTOR CURRENT IC (A) 12 V 11 V 100 10 V 50 9V 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCE 10 3 T j =150 °C T j =125 °C 2.5 2 1.5 T j =25 °C 1 0.5 0 0 50 (V) 200 (A) G-E short-circuited (Chip) (Chip) 1000 IC=40 A T j =125 °C IE IC=100 A (A) IC=200 A 8 EMITTER CURRENT (V) 150 IC FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE 100 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C (Chip) 3.5 6 4 100 T j =150 °C T j =25 °C 2 0 10 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 VGE 18 0.5 20 (V) 1 1.5 2 2.5 EMITTER-COLLECTOR VOLTAGE Publication Date : December 2013 7 3 3.5 VEC (V) 4 < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C VCC=600 V, VGE=±15 V, IC=100 A, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 1000 td(off) td(off) tf (ns) SWITCHING TIME SWITCHING TIME (ns) tf 100 td(on) tr 10 100 td(on) tr 10 1 10 100 COLLECTOR CURRENT 1000 1 IC (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 10 Eoff 10 EXTERNAL GATE RESISTANCE 100 RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, IC/IE=100 A, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 100 Err 0.1 10 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) 1 REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) Eon 1 10 100 Eon 10 Eoff Err 1 1000 1 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 10 EXTERNAL GATE RESISTANCE Publication Date : December 2013 8 100 RG (Ω) < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART CAPACITANCE CHARACTERISTICS (TYPICAL) FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 °C VCC=600 V, VGE=±15 V, RG=6.2 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 100 Cies (ns), I r r CAPACITANCE (A) (nF) 10 1 0.1 10 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 100 VCE 10 1000 EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=600 V, IC=100 A, Tj=25 °C Single pulse, TC=25 °C R t h ( j - c ) Q =0.24 K/W, R t h ( j - c ) D =0.37 K/W Zth(j-c) NORMALIZED TRANSIENT THERMAL RESISTANCE VGE 15 10 5 0 0 100 (V) 20 (V) trr Cres 0.01 GATE-EMITTER VOLTAGE 100 trr Coes Irr 50 100 150 GATE CHARGE 200 QG 250 300 (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 TIME Publication Date : December 2013 9 0.01 (S) 0.1 1 10 < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES BRAKE PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) (Chip) 1000 3.5 3 2.5 (V) T j =150 °C VF T j =125 °C FORWARD VOLTAGE COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) VGE=15 V CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) 2 T j =25 °C 1.5 1 T j =125 °C 100 T j =150 °C 0.5 T j =25 °C 10 0 0 20 40 60 COLLECTOR CURRENT 80 IC 0.5 100 (A) 1 1.5 2 2.5 FORWARD CURRENT 3 IF 3.5 4 (A) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C VCC=600 V, IC=50 A, VGE=±15 V, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 1000 td(off) td(off) tf (ns) 100 SWITCHING TIME SWITCHING TIME (ns) tf td(on) 10 td(on) 100 tr tr 10 1 1 10 COLLECTOR CURRENT 100 IC 10 (A) 100 EXTERNAL GATE RESISTANCE Publication Date : December 2013 10 1000 RG (Ω) < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES BRAKE PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IF=50 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 100 10 Eon 0.1 1 Err 0.01 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) Eoff 1 REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) 10 0.1 1 10 Eon 10 Eoff Err 1 100 10 COLLECTOR CURRENT IC (A) FORWARD CURRENT IF (A) (Ω) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C Single pulse, TC=25 °C R t h ( j - c ) Q =0.44 K/W, R t h ( j - c ) D =0.66 K/W Zth(j-c) NORMALIZED TRANSIENT THERMAL RESISTANCE (A) trr 100 trr (ns), I r r 1000 RG BRAKE DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 1000 Irr 10 1 100 EXTERNAL GATE RESISTANCE 10 FORWARD CURRENT 100 IF (A) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME Publication Date : December 2013 11 (S) 0.1 1 10 < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES NTC thermistor part TEMPERATURE CHARACTERISTICS (TYPICAL) 10 RESISTANCE R (kΩ) 100 1 0.1 -50 -25 0 25 50 TEMPERATURE T 75 100 125 (°C) Publication Date : December 2013 12 < IGBT MODULES > CM100RX-24S1 HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! 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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2013 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : December 2013 13