CM400ST-24S1

<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current IC .............…..............................… 4 0
Collector-emitter voltage VCES ..............................…
BRIDGE 1 2 0
AC SWITCH
6 5
Maximum junction temperature T v j m a x ........................ 1 7
●Flat base Type
●Copper base plate
●Tin plating pin terminals
●RoHS Directive compliant*
0A
0V
0V
5 °C
fourpack (BRIDGE & AC SWITCH)
APPLICATION
3level inverter, UPS, PV
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
TERMINAL t=0.8
SECTION A
Tolerance otherwise specified
P
C
Cs2
Tr2
Division of Dimension
N
Di2
Cs1
Es4
Tr1
G2
Di4
Di1
G1
G4
Es23
Tr4
Es1
Cs4
Di3
G3
Tr3
NTC
Cs3
AC
Publication Date : April 2015
CMH-10632
1
Ver.1
TH1
TH2
3
Tolerance
0.5
to
±0.2
over
3
to
6
±0.3
over
6
to
30
±0.5
over
30
to 120
±0.8
over 120
to 400
±1.2
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tvj=25 °C, unless otherwise specified)
BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)
Rating
Unit
VCES
Symbol
Collector-emitter voltage
G-E short-circuited
1200
V
VGES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
Item
Conditions
DC, TC=103 °C
Collector current
ICRM
Ptot
IE
IERM
(Note1)
400
Pulse, Repetitive, VGE15 V
Total power dissipation
(Note1)
(Note2, 4)
TC=25 °C
DC
Emitter current
(Note3)
A
800
(Note2, 4)
2340
(Note2)
W
400
Pulse, Repetitive
(Note3)
A
800
AC SWITCH PART IGBT/DIODE (Tr2, Tr3, Di2, Di3)
Symbol
Item
Conditions
Rating
Unit
VCES
Collector-emitter voltage
G-E short-circuited
650
V
VGES
Gate-emitter voltage
C-E short-circuited
± 20
V
IC
DC, TC=95°C
Collector current
ICRM
Ptot
IE
IERM
(Note1)
400
Pulse, Repetitive, VGE15 V
Total power dissipation
(Note1)
(Note2, 4)
TC=25 °C
DC
Emitter current
(Note3)
A
800
(Note2, 4)
1415
(Note2)
W
400
Pulse, Repetitive
(Note3)
A
800
MODULE
Symbol
Item
Conditions
Rating
Unit
V
Visol
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
4000
Tv jmax
Maximum junction temperature
Instantaneous event (overload)
175
TCmax
Maximum case temperature
(Note4)
125
Tv jop
Operating junction temperature
Continuous operation (under switching)
-40 ~ +150
Tst g
Storage temperature
-
-40 ~ +125
°C
°C
ELECTRICAL CHARACTERISTICS (T v j =25 °C, unless otherwise specified)
BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)
Symbol
Item
Conditions
Min.
Limits
Typ.
Max.
Unit
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
-
-
1.0
mA
IGES
Gate-emitter leakage current
VGE=VGES, C-E short-circuited
-
-
0.5
μA
V G E (t h )
Gate-emitter threshold voltage
IC=40mA, VCE=10 V
5.4
6.0
6.6
V
V C E sa t
(Terminal)
Collector-emitter saturation voltage
V C E sa t
(Chip)
Cies
IC=400 A, VGE=15 V,
T v j =25 °C
-
1.80
2.25
Auxiliary Terminal
T v j =125 °C
-
2.00
-
(Note5)
T v j =150 °C
-
2.05
-
IC=400 A, VGE=15 V,
T v j =25 °C
-
1.70
2.15
Chip
T v j =125 °C
-
1.90
-
(Note5)
T v j =150 °C
-
1.95
-
-
-
40
-
-
8.0
-
-
0.67
-
840
-
-
-
700
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
VCE=10 V, G-E short-circuited
VCC/2=300 V, IC=400A, VGE=15 V
VCC/2=300 V, IC=400 A, VGE=±15 V,
RG=1.6 Ω, Inductive load
VEC (Note1)
(Terminal)
Emitter-collector voltage
VEC (Note1)
(Chip)
Publication Date : April 2015
CMH-10632
-
200
-
600
-
-
150
IE=400 A, G-E short-circuited,
T v j =25 °C
-
2.60
3.40
Auxiliary Terminal
T v j =125 °C
-
2.16
-
(Note5)
T v j =150 °C
-
2.10
-
IE=400 A, G-E short-circuited,
T v j =25 °C
-
2.50
3.30
Chip
T v j =125 °C
-
2.06
-
(Note5)
T v j =150 °C
-
2.00
-
2
Ver.1
-
V
V
nF
nC
ns
V
V
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (Cont; T v j =25 °C, unless otherwise specified)
BRIDGE PART IGBT/DIODE (Tr1, Tr4, Di1, Di4)
Symbol
(Note1)
trr
Item
Conditions
Reverse recovery time
VCC/2=300 V, IE=400 A, VGE=±15 V,
Reverse recovery charge
RG=0 Ω(Tr2/Tr3), Inductive load
Eon
Turn-on switching energy per pulse
VCC/2=300 V, IC=IE=400A,
E of f
Turn-off switching energy per pulse
VGE=±15 V, T v j =150 °C,
(Note1)
Qrr
(Note1)
Err
RG(Tr1,4) =1.6 Ω
RG(Tr2,3) =0 Ω
Min.
-
Limits
Typ.
-
Max.
250
-
16
-
-
17.0
-
-
23.5
-
Unit
ns
μC
mJ
Reverse recovery energy per pulse
Inductive load
-
7.0
-
mJ
R CC'+EE'
Internal lead resistance
Main terminals-chip, per switch,
TC=25 °C (Note4)
-
-
0.25
mΩ
rg
Internal gate resistance
Per switch
-
4.9
-
Ω
Min.
-
Limits
Typ.
-
Max.
1.0
AC SWITCH PART IGBT/DIODE (Tr2, Tr3, Di2, Di3)
Symbol
Item
Conditions
ICES
Collector-emitter cut-off current
VCE=VCES, G-E short-circuited
IGES
Gate-emitter leakage current
VGE=VGES, C-E short-circuited
V G E (t h )
Gate-emitter threshold voltage
IC=40mA, VCE=10 V
(Terminal)
Collector-emitter saturation voltage
V C E sa t
(Chip)
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
QG
Gate charge
td(on)
Turn-on delay time
tr
Rise time
td(off)
Turn-off delay time
tf
Fall time
-
-
0.5
μA
6.0
6.6
V
T v j =25 °C
-
1.35
1.75
Auxiliary Terminal
T v j =125 °C
-
1.43
-
(Note5)
T v j =150 °C
-
1.45
-
IC=400 A, VGE=15 V,
T v j =25 °C
-
1.25
1.65
Chip
T v j =125 °C
-
1.33
-
(Note5)
T v j =150 °C
-
1.35
-
VCE=10 V, G-E short-circuited
VCC/2=300 V, IC=400 A, VGE=15 V
VCC/2=300 V, IC=400 A, VGE=±15 V,
RG=0 Ω, Inductive load
VEC (Note1)
(Terminal)
Emitter-collector voltage
VEC (Note1)
(Chip)
mA
5.4
IC=400 A, VGE=15 V,
V C E sa t
Unit
-
-
48
-
-
3.1
-
-
0.9
-
1450
-
-
-
350
-
-
150
-
-
500
-
-
300
IE=400 A, G-E short-circuited,
T v j =25 °C
-
2.00
2.80
Auxiliary Terminal
T v j =125 °C
-
1.95
-
(Note5)
T v j =150 °C
-
1.90
-
IE=400A, G-E short-circuited,
T v j =25 °C
-
1.90
2.70
Chip
T v j =125 °C
-
1.85
-
(Note5)
T v j =150 °C
V
V
nF
nC
ns
V
V
-
1.80
-
Reverse recovery time
VCC/2=300 V, IE=400 A, VGE=±15 V,
-
-
200
ns
Reverse recovery charge
RG=1.6 Ω(Tr1/Tr4), Inductive load
-
16
-
μC
Eon
Turn-on switching energy per pulse
VCC/2=300 V, IC=IE=400 A,
E of f
Turn-off switching energy per pulse
VGE=±15 V, T v j =150 °C,
Reverse recovery energy per pulse
Inductive load
Main terminals-chip, per switch,
TC=25 °C (Note4)
(Note1)
trr
(Note1)
Qrr
Err
(Note1)
R CC'+EE'
Internal lead resistance
rg
Internal gate resistance
RG(Tr2,3) =0 Ω
Per switch
RG(Tr1,4) =1.6 Ω
-
0.2
-
-
21.2
-
-
15.3
-
mJ
-
-
0.25
mΩ
-
1.5
-
Ω
Min.
4.85
Limits
Typ.
5.00
Max.
5.15
-7.3
-
+7.8
-
3375
-
K
-
-
10
mW
mJ
NTC THERMISTOR PART
Symbol
R25
Item
Conditions
Zero-power resistance
TC=25 °C
(Note4)
∆R/R
Deviation of resistance
R100=493 Ω, TC=100 °C
B(25/50)
B-constant
Approximate by equation
P25
Power dissipation
TC=25 °C
Publication Date : April 2015
CMH-10632
(Note4)
3
Ver.1
(Note4)
(Note6)
Unit
kΩ
%
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
THERMAL RESISTANCE CHARACTERISTICS
Symbol
Item
Conditions
Rth(j -c)Q
(Note4)
Junction to case, per half bridge IGBT
Rth(j -c)D
Rth(j -c)Q
(Note4)
Junction to case, per half bridge DIODE
Thermal resistance
Junction to case, per AC switch IGBT
Rth(j -c)D
Junction to case, per AC switch DIODE
Rth(c-s)
Case to heat sink, per 1 module,
Thermal grease applied (Note4, 7)
Contact thermal resistance
(Note4)
(Note4)
Min.
-
Limits
Typ.
-
Max.
0.064
Unit
-
-
0.105
-
-
0.106
-
-
0.165
-
0.011
-
Limits
Typ.
4.0
Max.
4.5
N·m
K/W
K/W
MECHANICAL CHARACTERISTICS
Symbol
Item
Conditions
Unit
Mt
Mounting torque
Main terminals
M 6 screw
Min.
3.5
Ms
Mounting torque
Mounting to heat sink
M 5 screw
2.5
3.0
3.5
N·m
m
mass
-
-
560
-
g
Terminal to terminal
14.4
-
-
Terminal to base plate
16.7
-
-
ds
Creepage distance
da
Clearance
ec
Flatness of base plate
Terminal to terminal
8.0
-
-
Terminal to base plate
16.7
-
-
-50
-
+100
On the centerline X, Y
(Note8)
mm
mm
μm
Note1.
2.
3.
4.
Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
Junction temperature (T v j ) should not increase beyond T v j m a x rating.
Pulse width and repetition rate should be such that the device junction temperature (T v j ) dose not exceed T v j m a x rating.
Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
R 25
1
1
) /(
)

6. B ( 25 / 50 )  ln(
R 50
T25 T50
-:Concave
+:Convex
R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
Y
X
mounting side
mounting side
-:Concave
mounting side
+:Convex
RECOMMENDED OPERATING CONDITIONS
Symbol
Item
V C C /2
(DC) Supply voltage
Applied across each of N to M and M to P
VGEon
Gate (-emitter drive) voltage
Applied across emitter to gate of each IGBT
RG
External gate resistance
Publication Date : April 2015
CMH-10632
Limits
Conditions
Per switch
4
Ver.1
Min.
Typ.
Max.
Unit
-
300
425
V
13.5
15.0
16.5
V
Tr1, Tr4
1.6
-
16
Tr2, Tr3
0
-
16
Ω
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr4: BRIDGE IGBT, Tr2/Tr3: AC SWITCH IGBT, Di1/Di4: BRIDGE DIODE, Di2/Di3: AC SWITCH DIODE, Th: NTC thermistor.r
Publication Date : April 2015
CMH-10632
5
Ver.1
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
-VGE
vGE
P
G
Es
iE
AC
Tr1,Di1
Tr3
Di3
C
Tr4,Di4
G
C
+VGE
0
RG
-VGE
Es
Tr2
Di2
E
Es G
0
iC
t
90 %
+
-VGE
iC
N
E
VCC
C
C
+VGE
vC
vGE G
0V
+
Load
E
90 %
～
～
C
～
～
TEST CIRCUIT AND WAVEFORMS
10%
0A
tr
td(on)
tf
td(off)
t
Switching test circuit and waveforms (BRIDGE PART switching)
C
-VGE
P
iE
G
Es
E
iC
AC
Tr1,Di1
Tr3
Di3
C
Tr4,Di4
G
C
-VGE
G
Es
N
E
Tr2
Di2
iE
+
Load
IE
VCC
C
C
E
+
0.5×I r r
-VGE
t r r , Q r r test waveform
iE
vCE
0
iC
iC
VCC
0.1×ICM
0.1×VCC
ICM
VCC
t
ti
0
t
Irr
Switching test circuit and waveforms (AC SWITCH PART switching)
ICM
trr
0A
Es G
RG +VGE
0
-VGE
Q r r =0.5×I r r ×t rr
0.1×VCC
vEC
vCE
0.02×ICM
ti
IEM
t
VCC
0A
t
0V
t
ti
IGBT Turn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : April 2015
CMH-10632
6
Ver.1
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
C
V
P
C
IC
G
Es
VGE
=15V Tr1
E
Tr3
Di3
C
Tr4
Di4
G
Tr2
Di2
Es
G
E
Es
Tr3
Di3
Tr4
Di4
G
Es
IC
E
C
Tr1
C
Tr4
Di4
P
C
IC
E
G
Es
Tr1
Di1
C
Tr4
Di4
G
C
G
Es
Tr3
Di3
E
Tr2
Di2
Es
E
C
C
P
E
C
G
C
V
N
V
G
Short- Es
circuited
Tr3
Di3
E
Tr2
Tr2
Di2
E
C
Es G
G
C
C
E
Short-circuited
G
Es
Tr2
Di2
Es G
C
IE
E
V
N
Di4
C
P
Es
C
Tr4
Di4
Es G
Tr3
Di3
G
C
VGE=15V
VGE=15V
G
N
Es
E
N
Tr2
Di2
C
Di2
IE
E
Tr1
Di1
AC
C
E
C
Tr4
Di4
Es G
V
Tr3
Di3
G
C
V
G
Short- Es
circuited
Short-circuited
P
G
AC
C
Tr3
E
Tr2
Di2
E
Es G
VGE=15V
N
Di3
VEC characteristics test circuit (AC SWITCH PART)
7
Ver.1
E
Tr1
Di1
C
V CEsa t characteristics test circuit (AC SWITCH PART)
Publication Date : April 2015
CMH-10632
Tr3
Di3
Tr4
Di4
IE
Es
Tr4
Di4
Es G
Shortcircuited V =15V
GE
Tr1
Di1
C
E
N
G
AC
C
AC
VEC characteristics test circuit (BRIDGE PART)
IC
E
C
E
Tr1
Di1
Di1
G
AC
Tr2
Di2
Short-circuited
Tr4
G
Es
G
C
V CEsa t characteristics test circuit (BRIDGE PART)
C
Es
Tr3
Di3
P
G
AC
C
E
V
N
E
Tr1
Di1
Short-circuited
G
N
Tr2
Di2
Es G
C
VGE
=15V
Short-circuited
IE
Es
AC
C
Es G
C
E
C
E
C
P
G
Tr1
Di1
C
C
V
G
AC
Di1
P
C
C
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRIDGE PART
OUTPUT
CHARACTERISTICS
(TYPICAL)
T v j =25 °C
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
(Chip)
VGE=15 V
800
VGE=20 V
15 V
12 V
600
11 V
500
400
10 V
300
200
T v j =150 °C
3
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
COLLECTOR CURRENT IC (A)
700
9V
T v j =125 °C
2.5
2
T v j =25 °C
1.5
1
0.5
100
0
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCE
10
0
100
(V)
300
400
500
600
700
800
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
(Chip)
G-E short-circuited
10
(Chip)
1000
IC=800 A
8
(A)
T v j =125 °C
IC=400 A
EMITTER CURRENT IE
(V)
T v j =25 °C
200
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat
(Chip)
3.5
6
IC=160 A
4
T v j =150 °C
100
T v j =25 °C
2
10
0
6
8
10
12
14
16
18
0
20
GATE-EMITTER VOLTAGE VGE (V)
Publication Date : April 2015
CMH-10632
8
Ver.1
0.5
1
1.5
2
EMITTER-COLLECTOR VOLTAGE
2.5
3
VEC (V)
3.5
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRIDGE PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, RG=1.6 Ω(Tr1/Tr4), INDUCTIVE LOAD
---------------: T v j =150 °C, - - - - -: T v j =125 °C
VCE=300 V, VGE=±15 V, IC=400 A, INDUCTIVE LOAD
---------------: T v j =150 °C, - - - - -: T v j =125 °C
1000
1000
td(off)
td(on)
100
tr
td(off)
10
10
100
1000
0.1
COLLECTOR CURRENT IC (A)
1
10
EXTERNAL GATE RESISTANCE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, RG=1.6 (Tr1/Tr4) Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T v j =150 °C, - - - - -: T v j =125 °C
100
RG (Tr1/Tr4) (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, IC=400 A,
INDUCTIVE LOAD, PER PULSE
---------------: T v j =150 °C, - - - - -: T v j =125 °C
100
SWITCHING ENERGY (mJ)
10
E off
Eon
1
0.1
REVERSE RECOVERY ENERGY (mJ)
100
REVERSE RECOVERY ENERGY (mJ)
(ns)
tf
100
10
SWITCHING ENERGY (mJ)
tr
SWITCHING TIME tr, tf
(ns)
(ns)
SWITCHING TIME td(on), tr, td(off), tf
td(on)
SWITCHING TIME tr
SWITCHING TIME td(on), tr, td(off) tf
(ns)
tf
E off
Eon
10
1
0.01
10
100
0.1
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
Publication Date : April 2015
CMH-10632
9
Ver.1
1
EXTERNAL GATE RESISTANCE
10
RG (Tr1/Tr4) (Ω)
100
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRIDGE PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, RG=0 Ω (Tr2/Tr3),
INDUCTIVE LOAD, PER PULSE
---------------: T v j =150 °C, - - - - -: T v j =125 °C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, IE=400 A,
INDUCTIVE LOAD, PER PULSE
---------------: T v j =150 °C, - - - - -: T v j =125 °C
Err
1
0.1
0.01
100
1000
VCE=300 V, VGE=±15 V, RG=0 Ω (Tr2/Tr3), INDUCTIVE LOAD
---------------: T v j =150 °C, - - - - -: T v j =125 °C
Irr
trr
EMITTER CURRENT IE
EMITTER CURRENT IE
Publication Date : April 2015
CMH-10632
(A)
(A)
10
Ver.1
(ns)
1
EXTERNAL GATE RESISTANCE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
t r r (ns)
Err
0.1
COLLECTOR CURRENT IE (A)
(A)
10
1
10
Irr
SWITCHING TIME tr, tf
(ns)
10
REVERSE RECOVERY ENERGY (mJ)
100
SWITCHING TIME tr
REVERSE RECOVERY ENERGY (mJ)
100
10
RG (Tr2/Tr3) (Ω)
100
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
AC SWITCH PART
OUTPUT
CHARACTERISTICS
(TYPICAL)
T v j =25 °C
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
(Chip)
VGE=15 V
800
15 V
VGE=20 V
11 V
3
COLLECTOR-EMITTER
SATURATION VOLTAGE VCEsat (V)
COLLECTOR CURRENT IC (A)
700
600
12 V
10 V
500
400
300
9V
200
2.5
T v j =150 °C
2
1.5
T v j =125 °C
1
0.5
100
0
0
0
2
4
6
8
COLLECTOR-EMITTER VOLTAGE
VCE
10
0
100
(V)
300
400
500
600
700
800
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
(Chip)
G-E short-circuited
10
(Chip)
1000
(A)
IC=800 A
8
IC=400 A
EMITTER CURRENT IE
(V)
T v j =25 °C
200
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat
(Chip)
3.5
6
IC=160 A
4
100
T v j =125 °C
2
0
10
6
8
10
12
14
16
18
20
0
GATE-EMITTER VOLTAGE VGE (V)
Publication Date : April 2015
CMH-10632
11
Ver.1
0.5
1
1.5
2
EMITTER-COLLECTOR VOLTAGE
2.5
3
VEC (V)
3.5
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
AC SWITCH PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, RG=0 Ω(Tr2/Tr3), INDUCTIVE LOAD
---------------: T v j =150 °C, - - - - -: T v j =125 °C
VCE=300 V, VGE=±15 V, IC=400 A, INDUCTIVE LOAD
---------------: T v j =150 °C, - - - - -: T v j =125 °C
1000
1000
tf
td(on)
td(off)
tr
(ns)
tr
tf
SWITCHING TIME tr, tf
100
SWITCHING TIME td(on), tr, td(off), tf
(ns)
td(on)
SWITCHING TIME tr
SWITCHING TIME td(on), tr, td(off) tf
(ns)
(ns)
td(off)
100
10
10
10
100
1000
0.1
COLLECTOR CURRENT IC (A)
1
10
EXTERNAL GATE RESISTANCE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, RG=0 (Tr2/Tr3) Ω,
INDUCTIVE LOAD, PER PULSE
---------------: T v j =150 °C, - - - - -: T v j =125 °C
100
RG (Tr2/Tr3) (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, IC=400 A,
INDUCTIVE LOAD, PER PULSE
---------------: T v j =150 °C, - - - - -: T v j =125 °C
100
100
E off
1
0.1
Eon
0.01
REVERSE RECOVERY ENERGY (mJ)
10
SWITCHING ENERGY (mJ)
REVERSE RECOVERY ENERGY (mJ)
SWITCHING ENERGY (mJ)
Eon
E off
10
1
0.1
10
100
0.1
1000
COLLECTOR CURRENT IC (A)
EMITTER CURRENT IE (A)
Publication Date : April 2015
CMH-10632
12
Ver.1
1
EXTERNAL GATE RESISTANCE
10
RG (Tr2/Tr3) (Ω)
100
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
AC SWITCH PART
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, RG=1.6 Ω (Tr1/Tr4),
INDUCTIVE LOAD, PER PULSE
---------------: T v j =150 °C, - - - - -: T v j =125 °C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCE=300 V, VGE=±15 V, IE=400 A,
INDUCTIVE LOAD, PER PULSE
---------------: T v j =150 °C, - - - - -: T v j =125 °C
0.1
10
100
1000
VCE=300 V, VGE=±15 V, RG=1.6 Ω (Tr1/Tr4), INDUCTIVE LOAD
---------------: T v j =150 °C, - - - - -: T v j =125 °C
1000
Irr
trr
100
10
10
100
1000
EMITTER CURRENT IE
EMITTER CURRENT IE
Publication Date : April 2015
CMH-10632
(A)
(A)
13
Ver.1
1
EXTERNAL GATE RESISTANCE
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
t r r (ns)
Err
0.1
COLLECTOR CURRENT IE (A)
(A)
10
1
0.01
Irr
SWITCHING TIME tr, tf
1
REVERSE RECOVERY ENERGY (mJ)
(ns)
Err
SWITCHING TIME tr
REVERSE RECOVERY ENERGY (mJ)
10
(ns)
100
100
10
RG (Tr1/Tr4) (Ω)
100
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRIDGE PART
CAPACITANCE
CHARACTERISTICS
(TYPICAL)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T v j =25 °C
VCC=600 V, IC=400 A, Tvj=25 °C
20
100
GATE-EMITTER VOLTAGE VGE (V)
Cies
CAPACITANCE
(nF)
10
Coes
1
Cres
0.1
0.01
15
10
5
0
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
100
VCE
0
200
(V)
400
600
GATE CHARGE
800
QG
1000
1200
(nC)
AC SWITCH PART
CAPACITANCE
CHARACTERISTICS
(TYPICAL)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T v j =25 °C
VCC=300 V, IC=400 A, Tvj=25 °C
20
100
GATE-EMITTER VOLTAGE VGE (V)
Cies
CAPACITANCE
(nF)
10
1
Coes
Cres
0.1
0.01
15
10
5
0
0.1
1
10
COLLECTOR-EMITTER VOLTAGE
Publication Date : April 2015
CMH-10632
100
VCE
0
(V)
1000
GATE CHARGE
14
Ver.1
500
1500
QG
(nC)
2000
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON PART
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
(MAXIMUM)
Single pulse, TC=25 °C
NORMALIZED TRANSIENT THERMAL RESISTANCE Z t h ( j - c )
B R I D G E PA RT: R t h ( j - c ) Q =0.064 K/W, R t h ( j - c ) D =0.105 K/W
A C SW I T C H PA RT: R t h ( j - c ) Q =0.106 K/W, R t h ( j - c ) D =0.165 K/W
10
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
TIME
0.1
1
10
(S)
NTC THERMISTOR PART
TEMPERATURE
CHARACTERISTICS
(TYPICAL)
RESISTANCE
R (kΩ)
100
10
1
0.1
-50
-25
0
25
50
75
100
125
TEMPERATURE T (°C)
Publication Date : April 2015
CMH-10632
15
Ver.1
<IGBT Modules>
CM400ST-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
Keep safety first in your circuit designs!
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more
reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead
to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit
designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of
non-flammable material or (iii) prevention against any malfunction or mishap.
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•These materials are intended as a reference to assist our customers in the selection of the Mitsubishi
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© 2015 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED.
Publication Date : April 2015
CMH-10632
16
Ver.1