DMP2033UVT P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features V(BR)DSS RDS(ON) max -20V 65mΩ @VGS = -4.5V 100mΩ @VGS = -2.5V ID TA = +25°C -4.2A -3.4A Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data • Case: TSOT26 Applications • • Backlighting • Moisture Sensitivity: Level 1 per J-STD-020 • Power Management Functions • Terminal Connections: See Diagram • DC-DC Converters • • Motor Control Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Terminals: Finish – MatteTin annealed over Copper leadframe. e3 Solderable per MIL-STD-202, Method 208 • TSOT26 Weight: 0.0013 grams (approximate) D 1 6 D D 2 5 D G 3 4 S Top View Pin-Out Top View Internal Schematic Ordering Information (Note 4) Notes: Part Number Case Packaging DMP2033UVT-7 TSOT26 3000/Tape & Reel DMP2033UVT -13 TSOT26 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 20X = Product Type Marking Code YM = Date Code Marking for SAT (Shanghai Assembly/ Test site) YM = Date Code Marking for CAT (Chengdu Assembly/ Test site) Y or Y = Year (ex: A = 2013) M = Month (ex: 9 = September) Chengdu A/T Site Date Code Key Year Code Month Code 2011 Y Jan 1 Shanghai A/T Site 2012 Z Feb 2 DMP2033UVT Document number: DS36617 Rev. 2 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 5 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D March 2014 © Diodes Incorporated DMP2033UVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Drain-Source Voltage Characteristic VDSS -20 V Gate-Source Voltage VGSS ±8 V ID -4.2 -3.4 A IDM -10 A Steady State ADVANCED INFORMATION Continuous Drain Current (Note 6) TA = +25°C TA = +70°C Pulsed Drain Current (Note 6) Units Thermal Characteristics Characteristic Symbol Value PD 1.2 W Steady State RθJA 100 °C/W PD 1.7 W Steady State RθJA 74 °C/W TJ, TSTG -55 to 150 °C Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Units Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage Symbol Min Typ Max Unit Test Condition BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250µA IDSS ⎯ ⎯ -1.0 µA VDS = -20V, VGS = 0V IGSS ⎯ ⎯ ±100 nA VGS = ±8V, VDS = 0V VGS(th) -0.5 V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) ⎯ — -0.9 45 65 57 100 80 200 mΩ VGS = -2.5V, ID = -3.4A VGS = -1.8V, ID = -2A |Yfs| ⎯ 9 ⎯ S Input Capacitance Ciss ⎯ 845 ⎯ pF Output Capacitance Coss ⎯ 72 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 63 ⎯ pF Forward Transfer Admittance VDS = VGS, ID = -250µA VGS = -4.5V, ID = -4.2A VDS = -5V, ID = -4A DYNAMIC CHARACTERISTICS (Note 8) VDS = -15V, VGS = 0V f = 1.0MHz SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge Qg ⎯ 10.4 ⎯ nC Gate-Source Charge Qgs ⎯ 1.5 ⎯ nC Gate-Drain Charge Qgd ⎯ 1.9 ⎯ nC Turn-On Delay Time tD(on) ⎯ 6.5 ⎯ ns Turn-On Rise Time tr ⎯ 13.4 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 51.5 ⎯ ns tf ⎯ 21.8 ⎯ ns Turn-Off Fall Time Notes: VGS = -4.5V, VDS = -4V, ID = -3.5A VDS = -4V, VGS = -4.5V, RG = 6Ω, ID = -1A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMP2033UVT Document number: DS36617 Rev. 2 - 2 2 of 5 www.diodes.com March 2014 © Diodes Incorporated DMP2033UVT 20 20 18 16 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 18 VGS = -4.5V 16 VGS = -3V 14 VGS = -2.5V 12 VGS = -2V VGS = -1.8V 10 8 6 VGS = -1.5V VGS = -1.2V 2 12 10 8 6 T A = 150 °C 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 2 5 0.12 0.11 0.10 0.09 0.08 0.07 VGS = -2.5V 0.06 0.05 VGS = -4.5V 0.04 0.03 0.02 0.01 0 5 10 15 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.8 VGS = -4.5V ID = -10A 1.6 1.4 VGS = -2.5V ID = -5A 1.2 1.0 0.8 0.6 -50 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0 0.00 14 4 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCED INFORMATION VDS = -5.0V VGS = -8V -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 5 On-Resistance Variation with Temperature DMP2033UVT Document number: DS36617 Rev. 2 - 2 3 of 5 www.diodes.com TA = 125°C 0 TA = 85°C T A = 25°C TA = -55°C 0.5 1 1.5 2 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.1 VGS = -4.5V 0.09 0.08 0.07 TA = 150°C 0.06 TA = 125°C TA = 85° C 0.05 0.04 TA = 25° C 0.03 TA = -55° C 0.02 0.01 0 0 1 2 3 4 5 6 7 8 9 -ID, DRAIN SOURCE CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.1 0.09 0.08 0.07 0.06 0.05 VGS = -4.5V ID = -10A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature March 2014 © Diodes Incorporated DMP2033UVT 20 VGS(TH), GATE THRESHOLD VOLTAGE (V) 18 -IS, SOURCE CURRENT (A) 1 -ID = 1mA 0.8 -ID = 250µA 0.6 0.4 16 14 T A= 150°C 12 10 0.2 TA= 125°C T A= 25°C 8 6 TA= 85°C TA= -55°C 4 2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 8 10000 -VGS, GATE-SOURCE VOLTAGE (V) f = 1MHz CT, JUNCTION CAPACITANCE (pF) ADVANCED INFORMATION 1.2 Ciss 1000 Coss 100 Crss 10 0 2 4 6 8 10 12 14 16 18 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 7 6 5 3 2 1 0 20 VDS = -4V ID = -3.5A 4 0 2 4 6 8 10 12 14 16 18 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate-Charge Characteristics 20 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D e1 E E1 L2 c 4x θ1 e L θ 6x b A A2 A1 DMP2033UVT Document number: DS36617 Rev. 2 - 2 4 of 5 www.diodes.com TSOT26 Dim Min Max Typ A 1.00 − − A1 0.01 0.10 − A2 0.84 0.90 − D 2.90 − − E 2.80 − − E1 1.60 − − b 0.30 0.45 − c 0.12 0.20 − e 0.95 − − e1 1.90 − − L 0.30 0.50 L2 0.25 − − θ 0° 8° 4° θ1 4° 12° − All Dimensions in mm March 2014 © Diodes Incorporated DMP2033UVT Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. ADVANCED INFORMATION C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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