DMP3018SFK P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V(BR)DSS RDS(on)max -30V 14.5mΩ @ VGS = -10V 25.5mΩ @ VGS = -4.5V ID TA = +25°C -10.2A -7.7A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Low On-Resistance Low Input Capacitance Low Input/Output Leakage ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Case: U-DFN2523-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Load Switch Power Management Functions DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.008 grams (Approximate) D U-DFN2523-6 Pin 1 G Pin 1, 2 = Source Pin 3 = Gate Pin 4, 5, 6 = Drain S Gate Protection Diode ESD PROTECTED Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number DMP3018SFK-7 DMP3018SFK-13 Notes: Case U-DFN2523-6 U-DFN2523-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2523-6 Date Code Key Year Code Month Code 2014 B Jan 1 7P 2015 C Feb 2 DMP3018SFK Document number: DS37604 Rev. 2 - 2 Mar 3 P7 = Product Type Marking Code 7P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) YM P7 YM ADVANCE INFORMATION ADVANCED INFORMATION Product Summary 2016 D Apr 4 May 5 2017 E Jun 6 2018 F Jul 7 1 of 6 www.diodes.com Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D January 2015 © Diodes Incorporated DMP3018SFK Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS ADVANCE INFORMATION ADVANCED INFORMATION Drain-Source Voltage Gate-Source Voltage Value -30 Units V VGSS ±25 V Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C ID -10.2 -8.1 A Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25°C TA = +70°C ID -7.7 -6.1 A A Maximum Continuous Body Diode Forward Current (Note 6) IS -3 IDM -80 A Avalanche Current (Note 7) IAS -14 A Avalanche Energy (Note 7) EAS 104 mJ Symbol PD Value 1 Units W RJA 123 °C/W PD 2.2 W RJA 55 °C/W Pulsed Drain Current (10µs pulse, duty cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 6) PD 17 W RJC 7.2 °C/W TJ, TSTG -55 to +150 °C TC = +25°C Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Zero Gate Voltage Drain Current TJ = +150°C (Note 9) Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS -30 — — V VGS = 0V, ID = -10mA — — -1 — — -100 µA VDS = -24V, VGS = 0V — — ±10 µA VGS = ±25V, VDS = 0V V IDSS IGSS Test Condition -1 -1.6 -3 — 9.5 14.5 — 15 25.5 VSD — -0.7 -1.2 V VGS = 0V, IS = -1A On State Drain Current (Note 9) DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance ID(ON) -20 — — A VDS ≦-5V, VGS = -10V Ciss — 2,207 4,414 Output Capacitance Coss — 390 780 pF Reverse Transfer Capacitance Crss — 343 686 VDS = -15V, VGS = 0V, f = 1MHz Gate Resistance Rg — 8.4 20 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -10V) Qg — 42.7 90 Total Gate Charge (VGS = -4.5V) Gate-Source Charge Qg — 21.6 45 Qgs — 7.9 16 nC VDS = -15V, ID = -9.5A 20 15 ns VDD = -15V, VGS = -10V, RGEN = 6Ω, ID = -9.5A Static Drain-Source On-Resistance Diode Forward Voltage VGS(th) RDS(ON) Gate-Drain Charge Qgd — 10 Turn-On Delay Time tD(on) — 7.35 mΩ Turn-On Rise Time tr — 16.4 30 Turn-Off Delay Time tD(off) — 67.2 110 Turn-Off Fall Time tf 60 trr — — 37.5 Reverse Recovery Time 18.6 35 ns Reverse Recovery Charge Qrr — 8.6 17.5 nC Notes: VDS = VGS, ID = -250μA VGS = -10V, ID = -9.5A VGS = -4.5V, ID = -6.9A IS = -9.5A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. UIS in production with L = 1mH, TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMP3018SFK Document number: DS37604 Rev. 2 - 2 2 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP3018SFK 30.0 30 VDS = -5.0V VGS = -10V 20.0 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25 VGS = -4.0V VGS = -3.5V VGS = -3.0V 15.0 10.0 5.0 20 15 10 TA = 150C 5 VGS = -2.5V TA = 125C 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.02 0.018 0.016 VGS = -4.5V 0.014 0.012 VGS = -10V 0.01 0.008 0.006 0.004 0.002 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.2 ID = -9.5A 0.18 0.16 ID = -6.9A 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 5 10 15 20 -VGS, GATE SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 25 1.8 0.02 VGS = -10V 0.018 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 TA = 85C T A = 25C T A = -55C VGS = -2.2V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION ADVANCED INFORMATION 25.0 TA = 150C 0.016 TA = 125C 0.014 TA = 85C 0.012 T A = 25C 0.01 0.008 TA = -55C 0.006 0.004 1.6 1.4 VGS = -4.5V ID = -5A 1.2 1 0.8 0.002 0 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP3018SFK Document number: DS37604 Rev. 2 - 2 30 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP3018SFK 2.8 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE () 3 0.025 0.02 VGS = -4.5V ID = -5A 0.015 0.01 0.005 2.6 2.4 2.2 2 1.8 -I D = 1mA 1.6 1.4 -ID = 250µA 1.2 1 0.8 0.6 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 10000 30 f = 1MHz CT, JUNCTION CAPACITANCE (pF) -IS, SOURCE CURRENT (A) 25 20 TA= 150C 15 TA= 125C 10 TA= 85C 5 0 0 T A= 25C TA= -55C Ciss 1000 Coss Crss 100 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 100 9 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 RDS(ON) Limited 8 -ID, DRAIN CURRENT (A) -VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION ADVANCED INFORMATION 0.03 7 6 VDS = -15V ID = -9.5A 5 4 3 10 DC PW = 10s PW = 100ms PW = 10ms PW = 1ms 0.1 T J(max) = 150°C T A = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 2 1 0 PW = 1s 1 0 5 10 15 20 25 30 35 40 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMP3018SFK Document number: DS37604 Rev. 2 - 2 45 0.01 0.1 4 of 6 www.diodes.com PW = 100µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 January 2015 © Diodes Incorporated DMP3018SFK 1 D = 0.9 D = 0.7 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 59°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A3 A1 D e L (3x) Pin #1 ID R0.150 E E1 D1 L1 (2x) U-DFN2523-6 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.02 A3 0.152 b 0.25 0.35 0.30 D 2.45 2.55 2.50 D1 1.55 1.65 1.60 e 0.65 E 2.25 2.35 2.30 E1 1.18 1.28 1.23 L 0.30 0.40 0.35 L1 0.30 0.40 0.35 All Dimensions in mm b (6x) Suggested Pad Layout Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. U-DFN2523-6 X1 Y1 Y2 Y3 Y C DMP3018SFK Document number: DS37604 Rev. 2 - 2 Dimensions Value (in mm) C 0.650 X 0.400 X1 1.700 Y 0.650 Y1 0.450 Y2 1.830 Y3 2.700 X 5 of 6 www.diodes.com January 2015 © Diodes Incorporated DMP3018SFK ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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