DMG6968U-7

DMG6968U
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data


Low On-Resistance
 25mΩ @ VGS = 4.5V

29mΩ @ VGS = 2.5V

36mΩ @ VGS = 1.8V

Low Input Capacitance

Fast Switching Speed

Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish — Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3

Low Input/Output Leakage

Terminals Connections: See Diagram Below

ESD Protected Up To 2kV

Weight: 0.008 grams (approximate)

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

PPAP Capable (Note 4)
Drain
D
Gate
Gate
Protection
Diode
ESD PROTECTED TO 2kV
Source
Top View
Internal Schematic
Top View
S
G
Ordering Information (Note 5)
Part Number
DMG6968U-7
DMG6968UQ-7
Notes:
Compliance
Standard
Automotive
Case
SOT23
SOT23
Packaging
3000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
2N4
Month
Code
2009
W
Jan
1
2010
X
Feb
2
DMG6968U
Document number: DS31738 Rev. 6 - 2
2N4 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site
Chengdu A/T Site
Date Code Key
Year
Code
YM
2N4
YM
Marking Information
Mar
3
2011
Y
Apr
4
May
5
2012
Z
Jun
6
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2013
A
Jul
7
Aug
8
2014
B
Sep
9
Oct
O
2015
C
Nov
N
Dec
D
October 2013
© Diodes Incorporated
DMG6968U
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Symbol
Value
Units
Drain-Source Voltage
Characteristic
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
ID
6.5
5.2
A
IDM
30
A
Symbol
Value
Unit
PD
1.3
W
RθJA
157
°C/W
TJ, TSTG
-55 to +150
°C
Continuous Drain Current (Note 6)
Steady
State
TA = +25°C
TA = +70°C
Pulsed Drain Current
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @ TA = +25°C
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
20


V
IDSS


1.0
µA
VDS = 20V, VGS = 0V
IGSS


±10
µA
VGS = 10V, VDS = 0V
BVSGS
±12
—
—
V
VDS = 0V, IG = 250µA
VGS(th)
0.5
V
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Gate-Source Breakdown Voltage
TJ = +25°C
VGS = 0V, ID = 250µA
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance

0.9
21
25
23
29
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 6.5A
RDS(ON)

28
36
|Yfs|

8

S
mΩ
VGS = 2.5V, ID = 5.5A
VGS = 1.8V, ID = 3.5A
VDS = 10V, ID = 5A
DYNAMIC CHARACTERISTICS (Note 8)
Ciss

151

pF
Output Capacitance
Coss

91

pF
Reverse Transfer Capacitance
Crss

32

pF
Total Gate Charge
Qg

8.5

nC
Gate-Source Charge
Qgs

1.6

nC
nC
Input Capacitance
Gate-Drain Charge
Qgd

2.8

Turn-On Delay Time
tD(on)

54

ns
Turn-On Rise Time
tr

66

ns
Turn-Off Delay Time
tD(off)

613

ns
tf

205

ns
Turn-Off Fall Time
Notes:
VDS = 10V, VGS = 0V
f = 1.0MHz
VGS = 4.5V, VDS = 10V, ID = 6.5A
VDD = 10V, VGS = 4.5V,
RL = 10, RG = 6, ID = 1A
6. Device mounted on FR-4 substrate PC board, 2oz. copper, with thermal vias to bottom layer 1 inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMG6968U
Document number: DS31738 Rev. 6 - 2
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October 2013
© Diodes Incorporated
DMG6968U
20
VDS = 5V
VGS = 4.5V
16
16
VGS = 3.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
20
VGS = 10V
VGS = 2.5V
VGS = 2.0V
12
12
VGS = 1.5V
8
4
8
TA = 150°C
4
T A = 125°C
TA = 85°C
TA = 25°C
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
5
0.04
VGS = 1.8V
0.03
VGS = 2.5V
VGS = 4.5V
0.02
0.01
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
1
1.5
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
2
0.06
VGS = 4.5V
0.05
0.04
TA = 150°C
TA = 125°C
0.03
TA = 85°C
T A = 25°C
0.02
TA = -55°C
0.01
30
0
0
4
8
12
16
ID, DRAIN CURRENT (A)
20
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.6
0.06
VGS = 2.5V
ID = 5.5A
1.4
0.05
RDSON, DRAIN-SOURCE
ON-RESISTANCE ()
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
T A = -55°C
0
0.5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
VGS = 4.5V
ID = 6.5A
1.2
1.0
0.8
0.04
VGS = 2.5V
ID = 5.5A
0.03
VGS = 4.5V
ID = 6.5A
0.02
0.01
0.6
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
DMG6968U
Document number: DS31738 Rev. 6 - 2
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
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DMG6968U
20
1.2
16
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.4
1.0
12
ID = 250µA
0.8
0.6
0.4
T A = 25°C
ID = 1mA
8
4
0.2
0
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100,000
500
IDSS, LEAKAGE CURRENT (nA)
450
C, CAPACITANCE (pF)
400
350
300
250
200
Ciss
150
100
10,000
TA = 150°C
1,000
Coss
TA = 125°C
100
TA = 85°C
10
TA = -55°C
50
0
Crss
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
1
20
0
2
TA = 25°C
4
6
8 10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RJA(t) = r(t) * RJA
RJA = 162°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = 0.005
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t 1/t2
D = Single Pulse
0.001
0.000001 0.00001
DMG6968U
Document number: DS31738 Rev. 6 - 2
t1
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
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10
100
1,000
October 2013
© Diodes Incorporated
DMG6968U
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
B C
H
K
J
M
K1
D
F
L
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.903 1.10
1.00
K1
0.400
L
0.45
0.61
0.55
M
0.085 0.18
0.11
0°
8°

All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
Y
Z
C
X
DMG6968U
Document number: DS31738 Rev. 6 - 2
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
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DMG6968U
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DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
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website, harmless against all damages.
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final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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DMG6968U
Document number: DS31738 Rev. 6 - 2
6 of 6
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October 2013
© Diodes Incorporated