Transistors SMD Type PNP Transistors 2SB800 1.70 0.1 ■ Features ● High Collector to Emitter Voltage:VCEO>-80V ● Complement to 2SD1001 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -80 Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -300 Collector Current - Pulse (Note.1) ICP -500 Collector Power Dissipation PC 2 Junction Temperature Storage Temperature range TJ 150 Tstg -55 to 150 Unit V mA W ℃ Note.1: PW≦10ms,Duty Cycle≦50% ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= -100 μA， IE=0 -80 Collector- emitter breakdown voltage VCEO Ic= -1 mA， IB=0 -80 -5 Typ Max V Emitter - base breakdown voltage VEBO IE= -100μA， IC=0 Collector-base cut-off current ICBO VCB= -80 V , IE=0 -0.1 Emitter cut-off current IEBO VEB= -5V , IC=0 -0.1 Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain (Note.1) (Note.1) (Note.1) (Note.1) VCE(sat) IC=-300mA, IB=-30mA -0.3 -0.6 VBE(sat) IC=-300mA, IB=-30mA -0.9 -1.2 VBE VCE= -6V, IC= -10mA -600 -660 -700 VCE= -1V, IC= -50mA 90 200 400 VCE= -2V, IC= -300mA 30 80 hFE Collector output capacitance Cob Transition frequency fT Unit uA V mV VCB= -6V, IE= 0,f=1MHz 13 pF VCE= -6V, IE= 10mA 100 MHz Note.1:Pulse test : Pulse width ≤350μs,Duty Cycle≤2%. ■ Classification of hfe(1) Type 2SB800-M 2SB800-L 2SB800-K Range 90-180 135-270 200-400 Marking FM FL FK www.kexin.com.cn 1 Transistors SMD Type PNP Transistors ■ Typical Characterisitics 2 www.kexin.com.cn 2SB800 Transistors SMD Type PNP Transistors 2SB800 ■ Typical Characterisitics www.kexin.com.cn 3