Transistors SMD Type NPN Transistors 2SD1007 1.70 Features 0.1 High collector to emitter voltage: VCEO 120V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current Collector current (pulse) * Collector power dissipation IC 0.7 A IC (pu) 1.2 A Pc 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 *. PW 10ms,duty cycle 50% Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 120 Collector- emitter breakdown voltage VCEO Ic=1 mA， IB= 0 120 Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 Collector-base cut-off current ICBO VCB= 120 V , IE= 0 0.1 Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 V 5 Collector-emitter saturation voltage * VCE(sat) IC=500 mA, IB=50mA 0.6 Base - emitter saturation voltage * VBE(sat) IC=500 mA, IB=50mA 1.5 Base - emitter voltage * DC current gain VBE * hFE Collector output capacitance Cob Transition frequency *. PW fT 350us,duty cycle VCE= 10V, IC= 10mA Unit 0.55 uA V 0.68 VCE= 1V, IC= 5mA 45 200 VCE= 1V, IC= 100mA 90 200 400 VCB= 10V, IE=0,f=1MHz 10 pF VCE= 10V, IC= 10mA 90 MHz 2% hFE Classification(2) Type 2SD1007-R 2SD1007-Q 2SD1007-P Range 90-180 135-270 200-400 Marking HR HQ HP www.kexin.com.cn 1 Transistors SMD Type NPN Transistors 2SD1007 ■ Typical Characterisitics 2 www.kexin.com.cn Transistors SMD Type NPN Transistors 2SD1007 ■ Typical Characterisitics www.kexin.com.cn 3