SOT-723 Plastic-Encapsulate MOSFETS CJ3139K

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-723 Plastic-Encapsulate MOSFETS
CJ3139K
P-Channel MOSFET
SOT-723
FEATURES
z Lead Free Product is Acquired
z Surface Mount Package
z P-Channel Switch with Low RDS(on)
z Operated at Low Logic Level Gate Drive
APPLICATION
z Load/Power Switching
z Interfacing, Logic Switching
z Battery Management for Ultra Small Portable Electronics
1. GATE
2. SOURCE
3. DRAIN
MARKING: KD
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±6
V
Continuous Drain Current (note 1)
ID
-0.66
A
Pulsed Drain Current
IDM
-1.2
A
PD
150
mW
RθJA
833
℃/W
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-55~+150
℃
TL
260
℃
(tp=10μs)
Power Dissipation (note 1)
Thermal Resistance from Junction to Ambient (note 1)
Lead Temperature for Soldering Purposes(1/8” from case for 10 s)
A-2,Jan,2013
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC CHARACTERISTICS
Drain-source breakdown voltage
V (BR)DSS
VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-20V,VGS = 0V
-1
µA
Gate-body leakage current
IGSS
VGS =±12V, VDS = 0V
20
µA
VGS(th)
VDS =VGS, ID =-250µA
-0.8
V
VGS =-4.5V, ID =-1A
520
mΩ
VGS =-2.5V, ID =-0.8A
700
mΩ
VGS =-1.8V, ID =-0.5A
950
mΩ
Gate threshold voltage (note 2)
Drain-source on-resistance (note 2)
RDS(on)
Forward transconductance (note 2)
gFS
VDS =-10V, ID =-0.54A
Diode forward voltage
VSD
IS=-0.5A, VGS = 0V
-20
V
-0.35
1.2
S
-1.2
V
113
170
pF
15
25
pF
15
pF
DYNAMIC CHARACTERISTICS (note 4)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
9
td(on)
9
ns
VDS =-16V,VGS =0V,f =1MHz
SWITCHING CHARACTERISTICS (note 4)
Turn-on delay time (note 3)
Turn-on rise time (note 3)
tr
VGS=-4.5V,VDS=-10V,
5.8
ns
Turn-off delay time (note3)
td(off)
ID =-200mA,RGEN=10Ω
32.7
ns
20.3
ns
Turn-off fall time (note 3)
tf
Notes :
1. Surface mounted on FR4 board using the minimum recommended pad size.
2. Pulse Test : Pulse Width=300µs, Duty Cycle=2%.
3. Switching characteristics are independent of operating junction temperatures.
4. Guaranteed by design, not subject to producting.
A-2,Jan,2013