2N5013 THRU 2N5015 500mA HIGH VOLTAGE NPN TRANSISTOR

, One..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N5013 THRU 2N5015
500mA
HIGH VOLTAGE NPN TRANSISTOR
800-1000 VOLTS
JEDEC TO-5
FEATURES
I-SH
BASE
BVCER AND BVCBO TO 1000 VOLTS
LOW SATURATION VOLTAGE
LOW LEAKAGE AT HIGH TEMPERATURE
200 C OPERATING, GOLD EUTECTIC DIE ATTACH
2N5010 THRU 2N5012 ALSO AVAILABLE
EMITTER''
SLEWS
COLLECTOR
.035
.030
MAXIMUM RATINGS
Rating
Collector -Emitter Voltage, RBE =
Symbol
1K
Ohms
2N5013
VCBO
VEBO
5
'c
'B
PD
500
mAmps
50
mAmps
2
20
Watts
mW/'C
T], Tstg
-65 to +200
°C
Emitter • Base Voltage
Collector Current
Base Current
Total Device Dissipation @ TC =100°C
Derate above
100 °c
Operating and Storage Temperature
Unit
Volts
800
900
1000
VCER
2N5014
2N5015
Collector - Base Voltage
Value
Volts
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction to Case
Symbol
Unit
Value
•c/w
50
R9JC
ELECTRICAL CHARACTERISTICS
Symbol
Characteristics
Collector • Emitter Breakdown Voltage*
2N50 13
dc-
2N5014
2N5015
200
uAde. RBE-
1
K ohms)
Collector • Base Breakdown Voltage
BVC£R'
Quality Semi-Conductors
800
900
1000
HUU
2N5013
BVCBO
Emitter * Base Breakdown Voltage
(IE = 50 uAdc)
Min.
BVEBO
900
Max.
Unit
Vdc
Vdc
1000
5
Vdc
ELECTRICAL CHARACTERISTICS
Symbol
Characteristics
Collector Cutoff Current
Collector Cutoff Current
(VCB
(VCB
(VCB
(VCB
(VCB
(VCB
650
700
750
650
700
750
Vdc)
Vdc)
Vdc)
Vdc, TA=100°C)
Vdcl TA=100°C)
Vdc, TA=100°C)
2N5013
2N5014
2N5015
2N5013
2N5014
2N5015
Min.
ICBO
'CBO
Max.
Unit
12**
uAdc
100**
uAdc
DC Current Gain*
<lc -
5
mAdc, VCE =
10
Vdc)
(lc.
20
mAdc, V C E -
10
vdc)
hFE.
25
30
Collector • Emitter Saturation Voltage'
(I0-
20
mAdc. IB.
5
mAdc)
^5013
180
VCE f"1*'
1.6
1.6
1.8
Vdc
VBE (SAT)-
1.0
Vdc
2N5015
Base - Emitter Saturation Voltage*
(lc -
20
mAdc. IB-
5
mAdc)
Current - Gain - Bandwith Product
(lc -
20
mAdc , VCE =
10
Vdc. f =
1
MHz)
'T
MHz
25
Output Capacitance
(VCB-
10
vdc. IE = 0.1=
Delay Time
Rise Time
(Vcc -
StoraueTlme
Fall Time
XC
125
10°
IB1 = IB2 -
5
MHZ)
Vdc,
I"Adc'
10
mAdc)
'Pulse Test: Pulse width = 300 us, DutyCycle = 2%
cob
<d
»r
V
V
**Typically 1 uA
25
200
1200
3.0
800
P»
ns
ns
us
ns