Data Sheet

CGHV50200F
200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT
Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT)
designed specifically with high efficiency, high gain and wide bandwidth capabilities,
which makes the CGHV50200F ideal for troposcatter communications, 4.4 -
5.0
GHz C-Band SatCom applications and Beyond Line of Sight. The transistor is supplied in
a ceramic/metal flange package, type 440215.
PN: CGHV502
00F
Package Type
: 440215
Typical Performance Over 4.4-5.0 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
4.4 GHz
4.6 GHz
4.8 GHz
5.0 GHz
Units
Small Signal Gain
14.9
14.9
14.9
15.1
dB
CW Output Power1
198
213
233
218
W
Output Power2
100
100
126
101
W
Power Gain2
11.4
11.6
11.0
11.8
dB
49
47
48
48
%
Power Added Efficiency2
1
Note: Measured CW in the CGHV50200F-AMP at PIN = 43 dBm
Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV50200F-AMP1 under OQPSK modulation, 1.6 Msps, PN23,
Alpha Filter = 0.2.
2
2015
Rev 1.0 – May
Features
Applications
•
4.4 - 5.0 GHz Operation
•
Troposcatter Communications
•
180 W Typical PSAT
•
Beyond Line of Sight – BLOS
•
11.5 dB Typical Power Gain
•
Satellite Communications
•
48% Typical Power Efficiency
•
50 Ohm Internally Matched
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Conditions
Drain-Source Voltage
VDSS
125
Volts
25˚C
Gate-to-Source Voltage
VGS
10, +2
Volts
25˚C
Storage Temperature
TSTG
-65, +150
˚C
Operating Junction Temperature
TJ
225
˚C
Maximum Forward Gate Current
IGMAX
41.6
mA
25˚C
Maximum Drain Current
IDMAX
17
A
25˚C
Soldering Temperature
TS
245
˚C
τ
40
in-oz
RθJC
0.81
˚C/W
CW, 85˚C, PDISS = 166.4 W
TC
-40, +150
˚C
30 seconds
1
2
Screw Torque
Thermal Resistance, Junction to Case
Case Operating Temperature
3
Note:
Current limit for long term, reliable operation
Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
3
See also, Power Dissipation Derating Curve on page 12
1
2
Electrical Characteristics
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
Gate Threshold Voltage
VGS(th)
-3.4
-3.0
-2.6
VDC
Gate Quiescent Voltage
VGS(Q)
–
-2.7
–
VDC
Saturated Drain Current2
IDS
33.28
37.4
–
A
Drain-Source Breakdown Voltage
VBR
150
–
–
VDC
VGS = -8 V, ID = 41.6 mA
DC Characteristics1 (TC = 25˚C)
VDS = 10 V, ID = 41.6 mA
VDS = 50 V, ID = 1.0 A
VDS = 6 V, VGS = 2 V
RF Characteristics (TC = 25˚C, F0 = 4.4 - 5.0 GHz unless otherwise noted)
3
Small Signal Gain
GSS1
–
15.4
–
dB
VDD = 40 V, ID = 1.0 A, PIN = 10 dBm
Small Signal Gain
GSS2
–
15.3
–
dB
VDD = 40 V, ID = 1.0 A, PIN = 10 dBm
Small Signal Gain
GSS3
–
15.2
–
dB
VDD = 40 V, ID = 1.0 A, PIN = 10 dBm
Power Gain4
GP1
–
12.1
–
dB
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz
Power Gain4
GP2
–
12.4
–
dB
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz
Power Gain4
GP3
–
12.2
–
dB
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz
Power Added Efficiency4
PAE1
–
45
–
%
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz
Power Added Efficiency4
PAE2
–
36
–
%
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz
Power Added Efficiency4
PAE3
–
35
–
%
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz
OQPSK Linearity4
ACLR1
–
-29
–
dBc
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz
OQPSK Linearity4
ACLR2
–
-34
–
dBc
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz
OQPSK Linearity4
ACLR3
–
-34
–
dBc
VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz
Output Mismatch Stress
VSWR
–
–
3:1
Y
No damage at all phase angles,
VDD = 40 V, ID = 1.0 A, CW POUT = 180 W
Notes:
1
Measured on wafer prior to packaging.
2
Scaled from PCM data.
3
Measured in CGHV50200F-AMP
4
Measured under 1.6 Msps OQPSK Modulation, PN23, Alpha Filter = 0.2
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
2
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Small
Signal
S-parameters
Figure 1.
- Small
Signal
S-parameters
CGHV50200F in Test Fixture
CGHV50200F in Test Fixture
Vdd = 40 V, Idq = 1 A, Tcase = 25°C
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
Gain, Return Loss (dB)
16
14
S21
12
S11
10
S22
8
6
4
2
0
-2
-4
-6
-8
-10
-12
-14
-16
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
Frequency (GHz)
Figure 2. -Modulated
Modulated
Spectral
Regrowth
= -30dBc,
1.6from
MHzCarrier
from Carrier
@@
Spectral
Regrowth
= -30dBc,
1.6 MHz
1.61.6
Msps
MspsOQPSK
OQPSKModulation
Modulation
= 40
1 A,
Tcase==25°C
25°C
VDDVdd
= 40
V, V,
IDQIdq
= 1= A,
Tcase
60
Output Power (dBm), Gain (dB), PAE (%)
55
50
45
40
35
30
25
Pout
20
Gain
15
PAE
10
5
0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
Frequency (GHz)
4.9
5.0
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
3
CGHV50200F Rev 1.0
5.1
5.2
5.3
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 3.Spectral
- Spectral
Mask
@ Average
Mask
@ Average
OutputOutput
Power =Power
48dBm= 48dBm
1.6Msps
Msps OQPSK
OQPSK Modulation
1.6
Modulation
Idq = 1 A, Tcase = 25°C
VVdd
= =4040V,V,IDQ
= 1 A, Tcase = 25°C
DD
10
5
Spectral Regrowth (dBc)
0
4.4 GHz
-5
-10
4.8 GHz
-15
5 GHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
Frequency Offset (MHz)
20
65
15
60
10
55
5
50
Gain 4.4 GHz
SR 4.4 GHz
0
45
Gain 4.8 GHz
-5
-10
SR 4.8 GHz
40
Gain 5 GHz
35
SR 5 GHz
-15
30
PAE 4.4 GHz
-20
PAE 4.8 GHz
25
-25
PAE 5 GHz
20
-30
15
-35
10
-40
5
-45
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52
Power Added Efficiency (%)
Gain (dB), Spectral Regrowth @ 1.6MHz Offset (dBc)
Figure 4. Modulated
- Modulated
Power
Sweep
Power
Sweep
1.6 Msps
OQPSK
Modulation
1.6 Msps
OQPSK
Modulation
40I V, =
Idq
A, Tcase
= 25°C
VDD Vdd
= 40=V,
1 =A,1 Tcase
= 25°C
DQ
0
Average Output Power (dBm)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 5.Modulated
- Modulated
Power
Sweep
Power
Sweep
Msps
OQPSK
Modulation
1.61.6
Msps
OQPSK
Modulation
= 40
Idq
A, Tcase
= 25°C
VDDVdd
= 40
V, IV,
= 1=A,1 Tcase
= 25°C
DQ
7.0
6.5
6.0
5.5
Id 4.4 GHz
Drain Current (A)
5.0
Id 4.8 GHz
4.5
Id 5 GHz
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52
Average Output Power (dBm)
Figure 6. - Two Tone Power Sweep
Two Tone Power Sweep
IMD3
CarrierSpacing
Spacing
IMD3@@11MHz
MHz Carrier
VVdd
= =4040V,V,IDQ
25°C
Idq==11A,
A,Tcase
Tcase == 25°C
DD
Third Order Intermodulation (dBc)
0
IMD3 4.4 GHz
-5
IMD3 4.8 GHz
-10
IMD3 5 GHz
-15
-20
-25
-30
-35
-40
-45
30
32
34
36
38
40
42
44
46
48
50
52
Average Output Power (dBm)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
5
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Two
ToneTone
Power
Sweep
Figure 7.
- Two
Power
Sweep
IMD @ 1 MHz Carrier Spacing, 4.4GHz
IMD Vdd
@ 1 =MHz
Carrier
Spacing,
4.4 GHz
40 V, Idq = 1 A, Tcase = 25°C
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
0
IMD3 4.4 GHz
IMD5 4.4 GHz
-10
Intermodulation (dBc)
IMD7 4.4 GHz
-20
-30
-40
-50
-60
-70
30
32
34
36
38
40
42
44
Average Output Power (dBm)
46
48
50
52
Tone
Carrier
Spacing
Sweep
Figure 8.Two
- Two
Tone
Carrier
Spacing
Sweep
@ 48dBm Average Ouput Power
@ 48 dBm
Average
Ouput
Power,
4.4
GHz
Vdd = 40 V, Idq = 1 A, Tcase = 25°C
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
0
-IMD3
+IMD3
-IMD5
+IMD5
-IMD7
+IMD7
-5
-10
IMD (dBc)
-15
-20
-25
-30
-35
-40
-45
-50
0.1
1.0
10.0
100.0
Carrier Spacing (MHz)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
6
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 9. - CW
[email protected]=43dBm
Frequency @ PIN = 43 dBm
CW
CGHV50200F
TestFixture
Fixture
CGHV50200F ininTest
Vdd
40 V,
VDD == 40
V, Idq
IDQ = 1 A,
A, Tcase
Tcase==25°C
25°C
60
Output Power (dBm), Gain (dB), PAE (%)
55
50
45
40
35
30
25
Pout
20
Gain
15
PAE
10
5
0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
Frequency (GHz)
5.0
5.1
5.2
5.3
44
46
Figure 10. - CW Power Sweep
CW Power Sweep
CGHV50200F
in Test Fixture
CGHV50200F in Test Fixture
VDD =
40 V,
V,Idq
IDQ =
= 11 A,
A,Tcase
Tcase==25°C
25°C
Vdd
= 40
60
Output Power (dBm), Gain (dB), PAE (%)
55
50
Pout 4.4 GHz
Gain 4.4 GHz
PAE 4.4 GHz
Pout 4.8 GHz
Gain 4.8 GHz
PAE 4.8 GHz
Pout 5 GHz
Gain 5 GHz
PAE 5 GHz
45
40
35
30
25
20
15
10
5
0
20
22
24
26
28
30
32
34
36
Input Power (dBm)
38
40
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7
CGHV50200F Rev 1.0
42
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 11. - Pulsed vs Frequency @ PIN = 43 dBm
Pulsed @Pin=43dBm
CGHV50200F
in Test Fixture
10% Duty,
Duty, 100
Width
10%
100uS
uSPulse
Pulse
Width
Vdd = 40 V, Idq = 1 A, Tcase = 25°C
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
65
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
Output Power (dBm), Gain (dB), PAE (%)
60
55
50
45
40
35
30
25
Pout
20
Gain
15
PAE
10
5
0
4.1
4.2
4.3
4.4
4.5
4.6
4.7
4.8
4.9
5.0
5.1
5.2
5.3
44
46
Frequency (GHz)
Figure 12. - Pulsed Power Sweep
CGHV50200F
in Test
Fixture
Pulsed Power
Sweep
10%Duty,
Duty, 100
100 uS
Width
10%
uSPulse
Pulse
Width
40 V, Idq = 1 A, Tcase = 25°C
VVdd
= =40
V, IDQ = 1 A, Tcase = 25°C
DD
65
Output Power (dBm), Gain (dB), PAE (%)
60
55
50
Pout 4.4 GHz
Gain 4.4 GHz
PAE 4.4 GHz
Pout 4.8 GHz
Gain 4.8 GHz
PAE 4.8 GHz
Pout 5 GHz
Gain 5 GHz
PAE 5 GHz
45
40
35
30
25
20
15
10
5
0
20
22
24
26
28
30
32
34
36
Input Power (dBm)
38
40
42
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
8
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Typical Performance
Figure 13.
- AM-AM
AM-AM
= 40
1 A,Tcase
Tcase =
= 25°C
25°C
VDDVdd
= 40
V, V,
IDQIdq
= 1= A,
S21 Magnitude (dB)
16
15
4.4 GHz
14
4.8 GHz
13
5 GHz
12
11
10
9
8
7
6
5
4
3
2
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
42
44
46
48
Input Power (dBm)
AM-PM
Figure
14.= -1AM-PM
Vdd =
40 V, Idq
A, Tcase = 25°C
VDD = 40 V, IDQ = 1 A, Tcase = 25°C
16
4.4 GHz
14
4.8 GHz
5 GHz
S21 Phase (Degrees)
12
10
8
6
4
2
0
-2
-4
12
14
16
18
20
22
24
26
28
30
32
34
Input Power (dBm)
36
38
40
42
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
9
CGHV50200F Rev 1.0
44
46
48
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV50200F-AMP Demonstration Amplifier Circuit
CGHV50200F-AMP Demonstration Amplifier Circuit Outline
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
10
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV50200F-AMP Demonstration Amplifier Circuit Schematic
CGHV50200F-AMP Demonstration Amplifier Circuit Bill of Materials
Designator
R1
C1,C6
Description
Qty
RES, 5.1,OHM, +/- 1%, 1/16W,0603
2
CAP, 2.4pF, +/- 0.25 pF,250V, 0603
1
C3,C8
CAP, 470PF, 5%, 100V, 0603, X
2
C4,C9
CAP,33000PF, 0805,100V, X7R
2
C5
CAP 10UF 16V TANTALUM
1
C7
CAP, 2.0PF, +/-1%,250V, 0805,
1
C10
CAP, 1.0UF, 100V, 10%, X7R, 1210
1
C11
CAP, 33 UF, 20%, G CASE
1
CONN, SMA, PANEL MOUNT JACK
2
C2
J1,J2
J3
HEADER RT>PLZ .1CEN LK 9POS
1
-
PCB, RF35, 2.5 X 3.0 X 0.250
1
-
2-56 SOC HD SCREW 1/4 SS
4
#2 SPLIT LOCKWASHER SS
4
CGHV50200F
1
Q1
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
11
CGHV50200F Rev 1.0
1
CAP, 4.7PF, +/-1%,250V, 0805,
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
CGHV50200F Power Dissipation De-rating Curve
Power Dissipation De-rating Curve
180
160
Power Dissipation (W)
140
120
100
Note 1
80
60
40
20
0
0
25
50
75
100
125
150
175
200
225
250
Maximum Case Temperature (°C)
Note 1 : Shaded area exceeds Maximum Case Operating Temperature (See Page 2)
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
Class
Test Methodology
Human Body Model
HBM
1A (> 250 V)
JEDEC JESD22 A114-D
Charge Device Model
CDM
2 (125 V to 250 V)
JEDEC JESD22 C101-C
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
12
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Dimensions CGHV50200F (Package Type ­— 440215)
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
13
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Part Number System
CGHV50200F
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Upper Frequency
1
Power Output
Package
Value
Units
5.0
GHz
200
W
Flange
-
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
0
B
1
C
2
D
3
E
4
F
5
G
6
H
7
J
8
K
9
Examples:
1A = 10.0 GHz
2H = 27.0 GHz
Table 2.
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
14
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Product Ordering Information
Order Number
Description
Unit of Measure
CGHV50200F
GaN HEMT
Each
Test board without GaN HEMT
Each
Test board with GaN HEMT installed
Each
CGHV50200F-TB
CGHV50200F-AMP
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
15
CGHV50200F Rev 1.0
Image
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.407.5639
Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
16
CGHV50200F Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf