CGHV50200F 200 W, 4400 - 5000 MHz, 50-Ohm Input/Output Matched, GaN HEMT Cree’s CGHV50200F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0 GHz C-Band SatCom applications and Beyond Line of Sight. The transistor is supplied in a ceramic/metal flange package, type 440215. PN: CGHV502 00F Package Type : 440215 Typical Performance Over 4.4-5.0 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 4.4 GHz 4.6 GHz 4.8 GHz 5.0 GHz Units Small Signal Gain 14.9 14.9 14.9 15.1 dB CW Output Power1 198 213 233 218 W Output Power2 100 100 126 101 W Power Gain2 11.4 11.6 11.0 11.8 dB 49 47 48 48 % Power Added Efficiency2 1 Note: Measured CW in the CGHV50200F-AMP at PIN = 43 dBm Note: Measured at -30 dBc, 1.6 MHz from carrier, in the CGHV50200F-AMP1 under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2. 2 2015 Rev 1.0 – May Features Applications • 4.4 - 5.0 GHz Operation • Troposcatter Communications • 180 W Typical PSAT • Beyond Line of Sight – BLOS • 11.5 dB Typical Power Gain • Satellite Communications • 48% Typical Power Efficiency • 50 Ohm Internally Matched Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-Source Voltage VDSS 125 Volts 25˚C Gate-to-Source Voltage VGS 10, +2 Volts 25˚C Storage Temperature TSTG -65, +150 ˚C Operating Junction Temperature TJ 225 ˚C Maximum Forward Gate Current IGMAX 41.6 mA 25˚C Maximum Drain Current IDMAX 17 A 25˚C Soldering Temperature TS 245 ˚C τ 40 in-oz RθJC 0.81 ˚C/W CW, 85˚C, PDISS = 166.4 W TC -40, +150 ˚C 30 seconds 1 2 Screw Torque Thermal Resistance, Junction to Case Case Operating Temperature 3 Note: Current limit for long term, reliable operation Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 See also, Power Dissipation Derating Curve on page 12 1 2 Electrical Characteristics Characteristics Symbol Min. Typ. Max. Units Conditions Gate Threshold Voltage VGS(th) -3.4 -3.0 -2.6 VDC Gate Quiescent Voltage VGS(Q) – -2.7 – VDC Saturated Drain Current2 IDS 33.28 37.4 – A Drain-Source Breakdown Voltage VBR 150 – – VDC VGS = -8 V, ID = 41.6 mA DC Characteristics1 (TC = 25˚C) VDS = 10 V, ID = 41.6 mA VDS = 50 V, ID = 1.0 A VDS = 6 V, VGS = 2 V RF Characteristics (TC = 25˚C, F0 = 4.4 - 5.0 GHz unless otherwise noted) 3 Small Signal Gain GSS1 – 15.4 – dB VDD = 40 V, ID = 1.0 A, PIN = 10 dBm Small Signal Gain GSS2 – 15.3 – dB VDD = 40 V, ID = 1.0 A, PIN = 10 dBm Small Signal Gain GSS3 – 15.2 – dB VDD = 40 V, ID = 1.0 A, PIN = 10 dBm Power Gain4 GP1 – 12.1 – dB VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz Power Gain4 GP2 – 12.4 – dB VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz Power Gain4 GP3 – 12.2 – dB VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz Power Added Efficiency4 PAE1 – 45 – % VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz Power Added Efficiency4 PAE2 – 36 – % VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz Power Added Efficiency4 PAE3 – 35 – % VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz OQPSK Linearity4 ACLR1 – -29 – dBc VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.4 GHz OQPSK Linearity4 ACLR2 – -34 – dBc VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 4.8 GHz OQPSK Linearity4 ACLR3 – -34 – dBc VDD = 40 V, ID = 1.0 A, POUT = 48 dBm, Freq = 5.0 GHz Output Mismatch Stress VSWR – – 3:1 Y No damage at all phase angles, VDD = 40 V, ID = 1.0 A, CW POUT = 180 W Notes: 1 Measured on wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV50200F-AMP 4 Measured under 1.6 Msps OQPSK Modulation, PN23, Alpha Filter = 0.2 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 2 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Small Signal S-parameters Figure 1. - Small Signal S-parameters CGHV50200F in Test Fixture CGHV50200F in Test Fixture Vdd = 40 V, Idq = 1 A, Tcase = 25°C VDD = 40 V, IDQ = 1 A, Tcase = 25°C Gain, Return Loss (dB) 16 14 S21 12 S11 10 S22 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 -16 3.0 3.2 3.4 3.6 3.8 4.0 4.2 4.4 4.6 4.8 5.0 5.2 5.4 5.6 5.8 6.0 Frequency (GHz) Figure 2. -Modulated Modulated Spectral Regrowth = -30dBc, 1.6from MHzCarrier from Carrier @@ Spectral Regrowth = -30dBc, 1.6 MHz 1.61.6 Msps MspsOQPSK OQPSKModulation Modulation = 40 1 A, Tcase==25°C 25°C VDDVdd = 40 V, V, IDQIdq = 1= A, Tcase 60 Output Power (dBm), Gain (dB), PAE (%) 55 50 45 40 35 30 25 Pout 20 Gain 15 PAE 10 5 0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 Frequency (GHz) 4.9 5.0 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 3 CGHV50200F Rev 1.0 5.1 5.2 5.3 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 3.Spectral - Spectral Mask @ Average Mask @ Average OutputOutput Power =Power 48dBm= 48dBm 1.6Msps Msps OQPSK OQPSK Modulation 1.6 Modulation Idq = 1 A, Tcase = 25°C VVdd = =4040V,V,IDQ = 1 A, Tcase = 25°C DD 10 5 Spectral Regrowth (dBc) 0 4.4 GHz -5 -10 4.8 GHz -15 5 GHz -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 -70 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 Frequency Offset (MHz) 20 65 15 60 10 55 5 50 Gain 4.4 GHz SR 4.4 GHz 0 45 Gain 4.8 GHz -5 -10 SR 4.8 GHz 40 Gain 5 GHz 35 SR 5 GHz -15 30 PAE 4.4 GHz -20 PAE 4.8 GHz 25 -25 PAE 5 GHz 20 -30 15 -35 10 -40 5 -45 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 Power Added Efficiency (%) Gain (dB), Spectral Regrowth @ 1.6MHz Offset (dBc) Figure 4. Modulated - Modulated Power Sweep Power Sweep 1.6 Msps OQPSK Modulation 1.6 Msps OQPSK Modulation 40I V, = Idq A, Tcase = 25°C VDD Vdd = 40=V, 1 =A,1 Tcase = 25°C DQ 0 Average Output Power (dBm) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 4 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 5.Modulated - Modulated Power Sweep Power Sweep Msps OQPSK Modulation 1.61.6 Msps OQPSK Modulation = 40 Idq A, Tcase = 25°C VDDVdd = 40 V, IV, = 1=A,1 Tcase = 25°C DQ 7.0 6.5 6.0 5.5 Id 4.4 GHz Drain Current (A) 5.0 Id 4.8 GHz 4.5 Id 5 GHz 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 Average Output Power (dBm) Figure 6. - Two Tone Power Sweep Two Tone Power Sweep IMD3 CarrierSpacing Spacing IMD3@@11MHz MHz Carrier VVdd = =4040V,V,IDQ 25°C Idq==11A, A,Tcase Tcase == 25°C DD Third Order Intermodulation (dBc) 0 IMD3 4.4 GHz -5 IMD3 4.8 GHz -10 IMD3 5 GHz -15 -20 -25 -30 -35 -40 -45 30 32 34 36 38 40 42 44 46 48 50 52 Average Output Power (dBm) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 5 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Two ToneTone Power Sweep Figure 7. - Two Power Sweep IMD @ 1 MHz Carrier Spacing, 4.4GHz IMD Vdd @ 1 =MHz Carrier Spacing, 4.4 GHz 40 V, Idq = 1 A, Tcase = 25°C VDD = 40 V, IDQ = 1 A, Tcase = 25°C 0 IMD3 4.4 GHz IMD5 4.4 GHz -10 Intermodulation (dBc) IMD7 4.4 GHz -20 -30 -40 -50 -60 -70 30 32 34 36 38 40 42 44 Average Output Power (dBm) 46 48 50 52 Tone Carrier Spacing Sweep Figure 8.Two - Two Tone Carrier Spacing Sweep @ 48dBm Average Ouput Power @ 48 dBm Average Ouput Power, 4.4 GHz Vdd = 40 V, Idq = 1 A, Tcase = 25°C VDD = 40 V, IDQ = 1 A, Tcase = 25°C 0 -IMD3 +IMD3 -IMD5 +IMD5 -IMD7 +IMD7 -5 -10 IMD (dBc) -15 -20 -25 -30 -35 -40 -45 -50 0.1 1.0 10.0 100.0 Carrier Spacing (MHz) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 6 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 9. - CW vs@Pin=43dBm Frequency @ PIN = 43 dBm CW CGHV50200F TestFixture Fixture CGHV50200F ininTest Vdd 40 V, VDD == 40 V, Idq IDQ = 1 A, A, Tcase Tcase==25°C 25°C 60 Output Power (dBm), Gain (dB), PAE (%) 55 50 45 40 35 30 25 Pout 20 Gain 15 PAE 10 5 0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 Frequency (GHz) 5.0 5.1 5.2 5.3 44 46 Figure 10. - CW Power Sweep CW Power Sweep CGHV50200F in Test Fixture CGHV50200F in Test Fixture VDD = 40 V, V,Idq IDQ = = 11 A, A,Tcase Tcase==25°C 25°C Vdd = 40 60 Output Power (dBm), Gain (dB), PAE (%) 55 50 Pout 4.4 GHz Gain 4.4 GHz PAE 4.4 GHz Pout 4.8 GHz Gain 4.8 GHz PAE 4.8 GHz Pout 5 GHz Gain 5 GHz PAE 5 GHz 45 40 35 30 25 20 15 10 5 0 20 22 24 26 28 30 32 34 36 Input Power (dBm) 38 40 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 7 CGHV50200F Rev 1.0 42 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 11. - Pulsed vs Frequency @ PIN = 43 dBm Pulsed @Pin=43dBm CGHV50200F in Test Fixture 10% Duty, Duty, 100 Width 10% 100uS uSPulse Pulse Width Vdd = 40 V, Idq = 1 A, Tcase = 25°C VDD = 40 V, IDQ = 1 A, Tcase = 25°C 65 VDD = 40 V, IDQ = 1 A, Tcase = 25°C Output Power (dBm), Gain (dB), PAE (%) 60 55 50 45 40 35 30 25 Pout 20 Gain 15 PAE 10 5 0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 44 46 Frequency (GHz) Figure 12. - Pulsed Power Sweep CGHV50200F in Test Fixture Pulsed Power Sweep 10%Duty, Duty, 100 100 uS Width 10% uSPulse Pulse Width 40 V, Idq = 1 A, Tcase = 25°C VVdd = =40 V, IDQ = 1 A, Tcase = 25°C DD 65 Output Power (dBm), Gain (dB), PAE (%) 60 55 50 Pout 4.4 GHz Gain 4.4 GHz PAE 4.4 GHz Pout 4.8 GHz Gain 4.8 GHz PAE 4.8 GHz Pout 5 GHz Gain 5 GHz PAE 5 GHz 45 40 35 30 25 20 15 10 5 0 20 22 24 26 28 30 32 34 36 Input Power (dBm) 38 40 42 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 8 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Typical Performance Figure 13. - AM-AM AM-AM = 40 1 A,Tcase Tcase = = 25°C 25°C VDDVdd = 40 V, V, IDQIdq = 1= A, S21 Magnitude (dB) 16 15 4.4 GHz 14 4.8 GHz 13 5 GHz 12 11 10 9 8 7 6 5 4 3 2 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 Input Power (dBm) AM-PM Figure 14.= -1AM-PM Vdd = 40 V, Idq A, Tcase = 25°C VDD = 40 V, IDQ = 1 A, Tcase = 25°C 16 4.4 GHz 14 4.8 GHz 5 GHz S21 Phase (Degrees) 12 10 8 6 4 2 0 -2 -4 12 14 16 18 20 22 24 26 28 30 32 34 Input Power (dBm) 36 38 40 42 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 9 CGHV50200F Rev 1.0 44 46 48 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV50200F-AMP Demonstration Amplifier Circuit CGHV50200F-AMP Demonstration Amplifier Circuit Outline Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 10 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV50200F-AMP Demonstration Amplifier Circuit Schematic CGHV50200F-AMP Demonstration Amplifier Circuit Bill of Materials Designator R1 C1,C6 Description Qty RES, 5.1,OHM, +/- 1%, 1/16W,0603 2 CAP, 2.4pF, +/- 0.25 pF,250V, 0603 1 C3,C8 CAP, 470PF, 5%, 100V, 0603, X 2 C4,C9 CAP,33000PF, 0805,100V, X7R 2 C5 CAP 10UF 16V TANTALUM 1 C7 CAP, 2.0PF, +/-1%,250V, 0805, 1 C10 CAP, 1.0UF, 100V, 10%, X7R, 1210 1 C11 CAP, 33 UF, 20%, G CASE 1 CONN, SMA, PANEL MOUNT JACK 2 C2 J1,J2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 - PCB, RF35, 2.5 X 3.0 X 0.250 1 - 2-56 SOC HD SCREW 1/4 SS 4 #2 SPLIT LOCKWASHER SS 4 CGHV50200F 1 Q1 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 11 CGHV50200F Rev 1.0 1 CAP, 4.7PF, +/-1%,250V, 0805, Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV50200F Power Dissipation De-rating Curve Power Dissipation De-rating Curve 180 160 Power Dissipation (W) 140 120 100 Note 1 80 60 40 20 0 0 25 50 75 100 125 150 175 200 225 250 Maximum Case Temperature (°C) Note 1 : Shaded area exceeds Maximum Case Operating Temperature (See Page 2) Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM 2 (125 V to 250 V) JEDEC JESD22 C101-C Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 12 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV50200F (Package Type — 440215) Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 13 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV50200F Package Power Output (W) Upper Frequency (GHz) Cree GaN High Voltage Parameter Upper Frequency 1 Power Output Package Value Units 5.0 GHz 200 W Flange - Table 1. Note1: Alpha characters used in frequency code indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 14 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV50200F GaN HEMT Each Test board without GaN HEMT Each Test board with GaN HEMT installed Each CGHV50200F-TB CGHV50200F-AMP Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 15 CGHV50200F Rev 1.0 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/rf Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2013 - 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. 16 CGHV50200F Rev 1.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf