Gre r Pro STU/D816S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m ) Max ID Rugged and reliable. 46 @ VGS=10V 80V 20A TO-252 and TO-251 Package. 68 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM Limit Units Drain-Source Voltage 80 V Gate-Source Voltage ±20 V 20 A 16 A 59 A 64 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C Thermal Resistance, Junction-to-Case 3 °C/W Thermal Resistance, Junction-to-Ambient 50 °C/W Drain Current-Continuous -Pulsed TC=25°C TC=70°C a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range d THERMAL CHARACTERISTICS R JC R JA Details are subject to change without notice. May,12,2011 1 www.samhop.com.tw STU/D816S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=64V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance VDS=VGS , ID=250uA VGS=10V , ID=10A VGS=4.5V , ID=8.25A VDS=10V , ID=10A Min Typ Max 80 1 Units V 1 uA ±100 nA V m ohm 2 3 37 46 50 26 68 m ohm S c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 1580 108 89 pF pF pF VDD=40V ID=1A VGS=10V RGEN= 6 ohm 28 26 ns ns 58 ns 12 ns VDS=40V,ID=10A,VGS=10V 25 nC VDS=40V,ID=10A,VGS=4.5V 12.5 nC 2.8 nC 8.1 nC VDS=25V,VGS=0V f=1.0MHz c VDS=40V,ID=10A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS VGS=0V,IS=2A Diode Forward Voltage VSD 0.76 1.3 V Notes a.The maximum current rating is limited by bond-wires. _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 40V.(See Figure13) May,12,2011 2 www.samhop.com.tw STU/D816S Ver 1.0 25 25 VGS=5V VGS=4V 10 VGS=3.5V 5 0 RDS(on)(m Ω) I D, Drain Current(A) VGS=4.5V 15 0 1.0 0.5 2.0 1.5 2.5 20 Tj=125 C 15 -55 C 10 25 C 5 0 3.0 0 6 5 Figure 2. Transfer Characteristics 100 2.2 80 V G S =4.5V 60 40 V G S =10V V G S =10V I D =10A 1.9 1.6 1.3 V G S =4.5V I D =8.25A 1.0 20 1 5 10 15 20 0 25 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 4 Figure 1. Output Characteristics 2.5 0.2 3 2 V GS, Gate-to-Source Voltage(V) 120 1 1 VDS, Drain-to-Source Voltage(V) R DS(on), On-Resistance Normalized ID, Drain Current(A) VGS=10V 20 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature May,12,2011 3 www.samhop.com.tw STU/D816S Ver 1.0 20.0 120 Is, Source-drain current(A) I D =10A 100 125 C RDS(on)(m Ω) 80 75 C 60 25 C 40 20 0 2 0 4 6 8 5.0 75 C 25 C 10 0 0.25 0.50 0.75 1.00 1.25 V GS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current V GS, Gate to Source Voltage(V) Ciss 1500 C, Capacitance(pF) 10.0 1.0 1800 1200 900 600 300 Coss Crss 0 0 125 C 10 5 15 20 25 10 VDS = 40V ID = 10A 8 6 4 2 0 30 0 4 8 12 16 20 24 28 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 32 100 Switching Time(ns) TD(off ) I D, Drain Current(A) 100 Tr TD(on) Tf 10 1 10 R ( DS ) ON L im it 10 1m 10 m DC s 0u s s 1 VGS=10V Single Pulse TC=25 C V DS =40V,I D =1A V GS =10V 0.1 0.1 1 10 100 0.1 1 10 100 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area May,12,2011 4 www.samhop.com.tw STU/D816S Ver 1.0 V ( BR )D S S tp L V DS D .U .T RG + - IA S VDD 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve May,12,2011 5 www.samhop.com.tw STU/D816S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS INCHES MIN MAX 2.100 2.500 0.000 0.200 0.889 0.400 0.770 1.140 5.460 4.800 0.400 0.600 6.223 5.300 4.900 5.515 6.300 6.731 4.320 5.004 2.290 REF 8.900 10.400 1.780 1.397 2.743 REF. 0.508 REF. 0.890 1.700 1.100 0.500 ° 10° 0 15° 0° MIN MAX 0.083 0.098 0.008 0.000 0.035 0.016 0.030 0.045 0.189 0.215 0.024 0.016 0.245 0.209 0.193 0.217 0.265 0.248 0.170 0.197 0.090 BSC 0.350 0.409 0.055 0.070 0.108 REF. 0.020 REF. 0.035 0.067 0.020 0.043 10 ° 0° ° 15° 0 May,12,2011 7 www.samhop.com.tw STU/D816S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC May,12,2011 6 www.samhop.com.tw STU/D816S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N ӿ97 ² 1.0 W 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V May,12,2011 8 www.samhop.com.tw