STU/D622S

Gre
r e
Pro
STU/D622S
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
R DS(ON) (m ) Max
ID
Rugged and reliable.
74 @ VGS=10V
60V
TO-252 and TO-251 Package.
17A
96 @ VGS=4.5V
G
G
D
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
VDS
VGS
ID
IDM
Limit
Units
Drain-Source Voltage
60
V
Gate-Source Voltage
±20
V
17
A
13.6
A
50
A
20
mJ
TC=25°C
42
W
TC=70°C
27
W
-55 to 150
°C
3
°C/W
50
°C/W
Drain Current-Continuous
-Pulsed
TC=25°C
TC=70°C
a
b
EAS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
a
d
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Oct,28,2010
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STU/D622S
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
Symbol
Parameter
Conditions
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=48V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
Drain-Source On-State Resistance
gFS
Forward Transconductance
Min
Typ
Max
60
Units
V
1
uA
±100
nA
1.9
3
59
74
V
m ohm
VGS=4.5V , ID=7A
71
96
m ohm
VDS=5V , ID=8A
18
S
VDS=25V,VGS=0V
f=1.0MHz
810
53
40
pF
pF
pF
VDD=30V
ID=1A
VGS=10V
RGEN= 6 ohm
15
12.3
18.5
ns
ns
ns
20
ns
VDS=30V,ID=8A,VGS=10V
13
nC
VDS=30V,ID=8A,VGS=4.5V
6.4
nC
VDS=30V,ID=8A,
VGS=10V
1.8
nC
3.5
nC
VDS=VGS , ID=250uA
VGS=10V , ID=8A
1
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=2A
0.81
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13)
Oct,28,2010
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STU/D622S
Ver 1.1
10
20
VGS=4V
16
I D, Drain Current(A)
ID, Drain Current(A)
VGS=10V
VGS=4.5V
12
VGS=3.5V
8
4
VGS=3V
-55 C
6
Tj=125 C
4
25 C
2
0
0
0
2.0
1.5
1.0
0.5
2.5
0
3.0
2.4
3.2
4.8
4.0
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.0
100
1.8
80
V G S =4.5V
60
V G S =10V
40
20
V G S =10V
I D =8A
1.6
1.4
1.2
V G S =4.5V
I D =7A
1.0
4
1
8
12
16
0
20
0
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.6
V GS, Gate-to-Source Voltage(V)
120
1
0.8
VDS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
8
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50
75 100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,28,2010
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STU/D622S
Ver 1.1
20.0
240
Is, Source-drain current(A)
I D =8A
200
RDS(on)(m Ω)
160
120
125 C
80
75 C
25 C
40
0
2
4
6
8
0
0.25
0.50
0.75
1.00
1.25
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
C, Capacitance(pF)
25 C
V GS, Gate-to-Source Voltage(V)
1000
Ciss
800
600
400
200
Coss
Crss
10
VDS=30V
ID=8A
8
6
4
2
0
0
5
10
15
20
25
30
0
2
4
8
6
10
14 16
12
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
100
300
TD(off )
TD(on)
I D, Drain Current(A)
100
Switching Time(ns)
75 C
10
1200
0
5.0
1.0
0
125 C
10.0
Tf
Tr
10
10
R
(
DS
ON
im
)L
10
it
1m
0u
s
s
10
m
DC s
1
VGS=10V
Single Pulse
TC=25 C
VDS=30V,ID=1A
VGS=10V
0.1
1
1
10
100
0.1
1
10
60
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Oct,28,2010
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STU/D622S
Ver 1.1
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Oct,28,2010
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STU/D622S
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
A
E
E2
TO-251
C
L
D1
D2
E1
1
2
H
B2
D
3
L2
L1
B1
D3
P
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
A1
B
MILLIMETERS
MIN
MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
5.300
4.900
6.700
7.300
8.000
7.000
15.300
13.700
6.700
6.300
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
INCHES
MIN
MAX
0.083
0.098
0.014
0.026
0.031
0.016
0.041
0.026
0.035
0.020
0.024
0.016
0.224
0.209
0.209
0.193
0.287
0.264
0.315
0.276
0.539
0.602
0.264
0.248
0.193
0.181
0.189
0.205
0.051
0.067
0.071
0.055
0.020
0.035
0.091 BSC
Oct,28,2010
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STU/D622S
Ver 1.1
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.290
8.900
1.397
2.743
0.508
0.890
0.500
0°
7°
INCHES
MAX
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
REF
10.400
1.770
REF.
REF.
1.700
1.100
10°
REF.
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
0.090
0.350
0.055
0.108
0.020
0.035
0.020
0°
7°
MAX
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.067
0.043
10 °
REF.
Oct,28,2010
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STU/D622S
Ver 1.1
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
ӿ97
² 1.0
W
17.0
+ 1.5
- 0
T
H
K
S
2.2
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
G
R
V
Oct,28,2010
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