STU/D10L01

Gre
r
Pro
STU/D10L01
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) (m Ω) Max
100V
10A
213 @ VGS=10V
Rugged and reliable.
TO-252 and TO-251 Package.
G
G
D
S
STU SERIES
TO - 252AA( D - PAK )
S
STD SERIES
TO - 251 ( I - PAK )
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
VDS
VGS
ID
Drain Current-Continuous
IDM
EAS
Limit
Units
Drain-Source Voltage
100
V
Gate-Source Voltage
±20
V
10
A
8
A
29
A
-Pulsed
TC=25°C
TC=70°C
a
b
Single Pulse Avalanche Energy
a
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
d
11
mJ
TC=25°C
50
W
TC=70°C
32
W
-55 to 150
°C
2.5
°C/W
50
°C/W
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
a
Thermal Resistance, Junction-to-Ambient
a
Details are subject to change without notice.
Dec,19,2011
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STU/D10L01
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted )
Symbol
Parameter
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
VGS=0V , ID=250uA
100
IDSS
Zero Gate Voltage Drain Current
VDS=80V , VGS=0V
IGSS
Gate-Body Leakage Current
VGS= ±20V , VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
RDS(ON)
gFS
Typ
Max
V
1
±100
1
Units
1.8
2.5
170
213
uA
nA
Drain-Source On-State Resistance
VDS=VGS , ID=250uA
VGS=10V , ID=5A
Forward Transconductance
VDS=20V , ID=5A
5.5
S
VDS=25V,VGS=0V
f=1.0MHz
310
35
20
pF
pF
pF
8
9
ns
ns
16.5
ns
3.5
ns
5.5
nC
1
nC
2
nC
V
m ohm
c
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Qg
Fall Time
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
c
VDD=50V
ID=1A
VGS=10V
RGEN= 6 ohm
VDS=50V,ID=5A,VGS=10V
VDS=50V,ID=5A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=1A
0.785
1.3
V
Notes
_ 10sec.
a.Surface Mounted on FR4 Board,t <
_ 2%.
_ 300us, Duty Cycle <
b.Pulse Test:Pulse Width <
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=0.5mH,VDD = 50V.(See Figure13)
Dec,19,2011
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STU/D10L01
Ver 1.1
10
10
VGS=6V
8
I D, Drain Current(A)
ID, Drain Current(A)
VGS=10V
VGS=5V
6
4
VGS=4V
2
8
6
Tj=125 C
4
-55 C
25 C
2
VGS=3V
0
0.5
1.5
1.0
2.0
2.5
0
3.0
0
2.4
3.6
4.8
7.2
6.0
V GS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
360
2.5
300
2.2
240
V G S =10V
180
120
60
V G S =10V
I D =5A
1.9
1.6
1.3
1.0
1
1
2
4
6
8
0
10
0
I D, Drain Current(A)
BVDSS, Normalized
Drain-Source Breakdown Voltage
V DS =V G S
I D =250uA
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
50
75
100
125
150
T j ( °C )
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1.6
1.4
25
Tj, Junction Temperature(° C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Vth, Normalized
Gate-Source Threshold Voltage
1.2
VDS, Drain-to-Source Voltage(V)
R DS(on), On-Resistance
Normalized
RDS(on)(m Ω)
0
75 100 125 150
Tj, Junction Temperature(° C )
1.15
I D =250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75
100 125 150
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Dec,19,2011
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STU/D10L01
Ver 1.1
20.0
600
Is, Source-drain current(A)
I D =5A
500
125 C
R DS(on)(m Ω)
400
300
75 C
200
25 C
100
0
0
2
4
6
8
0
0.25
0.50
0.75
1.00
1.25
V SD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
V GS, Gate to Source Voltage(V)
C, Capacitance(pF)
25 C
75 C
V GS, Gate-to-Source Voltage(V)
350
Ciss
280
210
140
Coss
70
Crss
5
10
VDS=50V
ID=5A
8
6
4
2
0
0
10 15 20 25
30 35 40 45 50
0
1
2
4
3
5
7
6
V DS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
8
80
10
TD(on)
Tf
1
10
R
DS
(O N
)L
im i
t
s
Tr
0u
TD(off )
10
I D, Drain Current(A)
100
Switching Time(ns)
5.0
1.0
10
420
0
125 C
10.0
1m
10
DC
m
s
s
1
VGS=10V
Single Pulse
TA=25 C
VDS=50V,ID=1A
VGS=10V
0.1
0.1
1
10
100
0.1
1
10
100
Rg, Gate Resistance(Ω)
V DS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Dec,19,2011
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STU/D10L01
Ver 1.1
V ( BR )D S S
tp
L
V DS
D .U .T
RG
+
-
IA S
VDD
20V
tp
0.0 1
IAS
Unclamped Inductive Test Circuit
Unclamped Inductive Waveforms
Figure 13b.
Figure 13a.
2
1
Normalized Transient
Thermal Resistance
D=0.5
0.2
0.1
P DM
0.1
0.05
t1
t2
0.02
0.01
1.
2.
3.
4.
S ING LE P ULS E
R J J A (t)=r (t) * R J J A
R J J A =S ee Datas heet
T J M-T A = P DM* R J J A (t)
Duty C ycle, D=t1/t2
0.01
10
-5
10
-4
10
-3
10
-2
10
-1
1
10
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Dec,19,2011
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STU/D10L01
Ver 1.1
PACKAGE OUTLINE DIMENSIONS
A
E
E2
TO-251
C
L
D1
D2
E1
1
2
H
B2
D
3
L2
L1
B1
D3
P
SYMBOL
A
A1
B
B1
B2
C
D
D1
D2
D3
H
E
E1
E2
L
L1
L2
P
A1
B
MILLIMETERS
MIN
MAX
2.100
2.500
0.350
0.650
0.400
0.800
0.650
1.050
0.500
0.900
0.400
0.600
5.300
5.700
5.300
4.900
6.700
7.300
8.000
7.000
15.300
13.700
6.700
6.300
4.600
4.900
4.800
5.200
1.300
1.700
1.400
1.800
0.500
0.900
2.300 BSC
INCHES
MIN
MAX
0.083
0.098
0.014
0.026
0.031
0.016
0.041
0.026
0.035
0.020
0.024
0.016
0.224
0.209
0.209
0.193
0.287
0.264
0.315
0.276
0.539
0.602
0.264
0.248
0.193
0.181
0.189
0.205
0.051
0.067
0.071
0.055
0.020
0.035
0.091 BSC
Dec,19,2011
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STU/D10L01
Ver 1.1
E
TO-252
A
b2
C
L3
1
D1
D
E1
H
1
2
3
DETAIL "A"
L4
b1
e
b
L2
L
A1
DETAIL "A"
L1
SYMBOLS
A
A1
b
b1
b2
C
D
D1
E
E1
e
H
L
L1
L2
L3
L4
1
MILLIMETERS
MIN
2.100
0.000
0.400
0.770
4.800
0.400
5.300
4.900
6.300
4.400
2.290
8.900
1.397
2.743
0.508
0.890
0.500
0°
7°
INCHES
MAX
2.500
0.200
0.889
1.140
5.460
0.600
6.223
5.515
6.731
5.004
REF
10.400
1.770
REF.
REF.
1.700
1.100
10°
REF.
MIN
0.083
0.000
0.016
0.030
0.189
0.016
0.209
0.193
0.248
0.173
0.090
0.350
0.055
0.108
0.020
0.035
0.020
0°
7°
MAX
0.098
0.008
0.035
0.045
0.215
0.024
0.245
0.217
0.265
0.197
BSC
0.409
0.070
REF.
REF.
0.067
0.043
10 °
REF.
Dec,19,2011
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STU/D10L01
Ver 1.1
TO-251 Tube/TO-252 Tape and Reel Data
TO-251 Tube
0.4
5.25
4.5
1.4
2.25
" A"
1.65
5.5
2~ӿ3.0
7.50
1.25
1.90
540 + 1.5
6.60
19.75
TO-252 Carrier Tape
B0
E
E2
T
E1
P1
P2
D1
K0
FEED DIRECTION
A0
D0
P0
UNIT:р
PACKAGE
TO-252
(16 р*
A0
6.96
²0.1
B0
10.49
²0.1
K0
2.79
²0.1
D0
D1
E
E1
E2
P0
P1
P2
T
ӿ2
ӿ1.5
+ 0.1
- 0
16.0
²0.3
1.75
²0.1
7.5
²0.15
8.0
²0.1
4.0
²0.1
2.0
²0.15
0.3
²0.05
TO-252 Reel
T
S
M
N
K
G
V
R
H
W
UNIT:р
TAPE SIZE
16 р
REEL SIZE
ӿ 330
M
ӿ330
² 0.5
N
W
ӿ97
² 1.0
17.0
+ 1.5
- 0
T
H
K
S
2.2
ӿ13.0
+ 0.5
- 0.2
10.6
2.0
²0.5
G
R
V
Dec,19,2011
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