Green Product STU/D452S S a mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low R DS(ON). PRODUCT SUMMARY V DSS R DS(ON) (m Ω) Max ID Rugged and reliable. 10 @ VGS=10V 40V TO-252 and TO-251 Package. 50A 12.5 @ VGS=4.5V G G D S STU SERIES TO - 252AA( D - PAK ) S STD SERIES TO - 251 ( I - PAK ) ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol Parameter VDS VGS ID IDM Limit Units Drain-Source Voltage 40 V Gate-Source Voltage ±20 V 50 A 40 A 146 A 14 mJ TC=25°C 42 W TC=70°C 27 W -55 to 150 °C 3 °C/W 50 °C/W Drain Current-Continuous -Pulsed TC=25°C TC=70°C a b EAS Single Pulse Avalanche Energy PD Maximum Power Dissipation TJ, TSTG Operating Junction and Storage Temperature Range a d THERMAL CHARACTERISTICS R JC R JA Thermal Resistance, Junction-to-Case a Thermal Resistance, Junction-to-Ambient a Details are subject to change without notice. Dec,10,2009 1 www.samhop.com.tw STU/D452S Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA IDSS Zero Gate Voltage Drain Current VDS=32V , VGS=0V IGSS Gate-Body Leakage Current VGS= ±20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) Drain-Source On-State Resistance gFS Forward Transconductance Min Typ Max 40 Units V 1 uA ±100 nA 1.6 3 8 10 V m ohm VGS=4.5V , ID=22A 9.5 13 m ohm VDS=10V , ID=25A 65 S VDS=20V,VGS=0V f=1.0MHz 1370 220 162 pF pF pF 24 30 ns ns VDS=VGS , ID=250uA VGS=10V , ID=25A 1 c DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge c VDD=20V ID=1A VGS=10V RGEN= 6 ohm 66 ns 17 ns VDS=20V,ID=25A,VGS=10V 26 nC VDS=20V,ID=25A,VGS=4.5V 12.5 nC 3 nC 6.8 nC VDS=20V,ID=25A, VGS=10V DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Diode Forward Voltage b VGS=0V,IS=3A 0.76 3 A 1.3 V Notes _ 10sec. a.Surface Mounted on FR4 Board,t < _ 2%. _ 300us, Duty Cycle < b.Pulse Test:Pulse Width < c.Guaranteed by design, not subject to production testing. d.Starting TJ=25°C,L=0.5mH,VDD = 30V.(See Figure13) Dec,10,2009 2 www.samhop.com.tw STU/D452S Ver 1.0 35 100 VGS=10V I D, Drain Current(A) ID, Drain Current(A) VGS=4V 80 VGS=3.5V 60 40 VGS=3V 20 21 Tj=125 C 14 25 C 0 2.0 1.5 1.0 0.5 0 3.0 2.5 1.4 2.1 2.8 4.2 3.5 V GS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 15 1.8 R DS(on), On-Resistance Normalized 2.0 12 V G S =4.5V 9 V G S =10V 6 V G S =10V I D =25A 1.6 1.4 V G S =4.5V I D =22A 1.2 1.0 3 20 1 40 60 80 0 100 0 I D, Drain Current(A) BVDSS, Normalized Drain-Source Breakdown Voltage V DS =V G S I D =250uA 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 50 75 100 125 150 T j ( °C ) Figure 4. On-Resistance Variation with Drain Current and Temperature 1.6 1.4 25 Tj, Junction Temperature(° C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Vth, Normalized Gate-Source Threshold Voltage 0.7 VDS, Drain-to-Source Voltage(V) 18 1 -55 C 7 0 0 RDS(on)(m Ω) 28 75 100 125 150 Tj, Junction Temperature(° C ) 1.15 I D =250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature(° C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature Dec,10,2009 3 www.samhop.com.tw STU/D452S Ver 1.0 60.0 30 Is, Source-drain current(A) I D =25A 25 R DS(on)(m Ω) 20 125 C 15 75 C 10 25 C 5 0 2 4 6 8 75 C 10 0 0.25 0.50 0.75 1.00 1.25 V GS, Gate-to-Source Voltage(V) V SD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 1500 V GS, Gate to Source Voltage(V) 1800 C, Capacitance(pF) 25 C 5.0 1.0 0 Ciss 1200 900 600 Coss 300 125 C 10.0 Crss 10 VDS=20V ID=25A 8 6 4 2 0 0 0 5 10 15 20 25 30 0 4 12 8 16 20 24 28 V DS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 32 Switching Time(ns) 100 I D, Drain Current(A) 300 TD(off ) Tr TD(on) Tf 10 RD 0.3 0.1 1 10 100 ON S( )L im it 10 1m 10 m DC s 10 1 VDS=20V,ID=1A VGS=10V 1 100 0u s s VGS=10V Single Pulse TA=25 C 1 10 60 Rg, Gate Resistance(Ω) V DS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Dec,10,2009 4 www.samhop.com.tw STU/D452S Ver 1.0 V ( BR )D S S 15V tp D R IVE R L VDS D .U .T RG + - VD D IA S A 20V tp 0.0 1 IAS Unclamped Inductive Test Circuit Unclamped Inductive Waveforms Figure 13b. Figure 13a. 2 1 Normalized Transient Thermal Resistance D=0.5 0.2 0.1 P DM 0.1 0.05 t1 t2 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E R J J A (t)=r (t) * R J J A R J J A =S ee Datas heet T J M-T A = P DM* R J J A (t) Duty C ycle, D=t1/t2 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Dec,10,2009 5 www.samhop.com.tw STU/D452S Ver 1.0 PACKAGE OUTLINE DIMENSIONS A E E2 TO-251 C L D1 D2 E1 1 2 H B2 D 3 L2 L1 B1 D3 P SYMBOL A A1 B B1 B2 C D D1 D2 D3 H E E1 E2 L L1 L2 P A1 B MILLIMETERS MIN MAX 2.100 2.500 0.350 0.650 0.400 0.800 0.650 1.050 0.500 0.900 0.400 0.600 5.300 5.700 5.300 4.900 6.700 7.300 8.000 7.000 15.300 13.700 6.700 6.300 4.600 4.900 4.800 5.200 1.300 1.700 1.400 1.800 0.500 0.900 2.300 BSC INCHES MIN MAX 0.083 0.098 0.014 0.026 0.031 0.016 0.041 0.026 0.035 0.020 0.024 0.016 0.224 0.209 0.209 0.193 0.287 0.264 0.315 0.276 0.539 0.602 0.264 0.248 0.193 0.181 0.189 0.205 0.051 0.067 0.071 0.055 0.020 0.035 0.091 BSC Dec,10,2009 6 www.samhop.com.tw STU/D452S Ver 1.0 E TO-252 A b2 C L3 1 D1 D E1 H 1 2 3 DETAIL "A" L4 b1 e b L2 L A1 DETAIL "A" L1 SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.100 0.000 0.400 0.770 4.800 0.400 5.300 4.900 6.300 4.400 2.290 8.900 1.397 2.743 0.508 0.890 0.500 0° 7° INCHES MAX 2.500 0.200 0.889 1.140 5.460 0.600 6.223 5.515 6.731 5.004 REF 10.400 1.770 REF. REF. 1.700 1.100 10° REF. MIN 0.083 0.000 0.016 0.030 0.189 0.016 0.209 0.193 0.248 0.173 0.090 0.350 0.055 0.108 0.020 0.035 0.020 0° 7° MAX 0.098 0.008 0.035 0.045 0.215 0.024 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.067 0.043 10 ° REF. Dec,10,2009 7 www.samhop.com.tw STU/D452S Ver 1.0 TO-251 Tube/TO-252 Tape and Reel Data TO-251 Tube 0.4 5.25 4.5 1.4 2.25 " A" 1.65 5.5 2~ӿ3.0 7.50 1.25 1.90 540 + 1.5 6.60 19.75 TO-252 Carrier Tape B0 E E2 T E1 P1 P2 D1 K0 FEED DIRECTION A0 D0 P0 UNIT:р PACKAGE TO-252 (16 р* A0 6.96 ²0.1 B0 10.49 ²0.1 K0 2.79 ²0.1 D0 D1 E E1 E2 P0 P1 P2 T ӿ2 ӿ1.5 + 0.1 - 0 16.0 ²0.3 1.75 ²0.1 7.5 ²0.15 8.0 ²0.1 4.0 ²0.1 2.0 ²0.15 0.3 ²0.05 TO-252 Reel T S M N K G V R H W UNIT:р TAPE SIZE 16 р REEL SIZE ӿ 330 M ӿ330 ² 0.5 N W ӿ97 ² 1.0 17.0 + 1.5 - 0 T H K S 2.2 ӿ13.0 + 0.5 - 0.2 10.6 2.0 ²0.5 G R V Dec,10,2009 8 www.samhop.com.tw