2N7002K1DW

Formosa MS
SMD MOSFET
2N7002K1DW
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 3
Rating and characteristic curves........................................................ 4
Pinning information........................................................................... 5
Marking........................................................................................... 5
Suggested solder pad layout............................................................. 5
Packing information.......................................................................... 6
Reel packing.................................................................................... 7
Suggested thermal profiles for soldering processes............................. 7
High reliability test capabilities........................................................... 8
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 1
DS-231153
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
8
Formosa MS
SMD MOSFET
2N7002K1DW
Package outline
Dual Channel 60V N-Channel
Enhancement Mode MOSFET
SOT-363
Features
.087(2.20)
.079(2.00)
• R DS(ON), V [email protected], I [email protected]=7.5 Ω (max.)
• R DS(ON), V [email protected], I [email protected]=7.5 Ω (max.)
• Fast switching speed
• Easily designed drive
• ESD protection: 1000V
• In compliance with EU RoHS 2002/95/EC directives.
• Suffix "-H" indicates Halogen-free part, ex. 2N7002K1DW-H.
8°
.096(2.45)
.085(2.15)
.018(0.46)
.010(0.26)
.053(1.35)
.045(1.15)
.026(0.65)Typ. .006(0.15)
.003(0.08)
.014(0.35)
.006(0.15)
.004(0.10)
Max.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-363
• Terminals : Solder plated, solderable per
.043(1.10)
.035(0.90)
.016(0.40)
.012(0.30)
Dimensions in inches and (millimeters)
MIL-STD-750, Method 2026
• Polarity : See Diagram
• Mounting Position : Any
• Weight : Approximated 0.006 gram
M aximum ratings (AT T
A
D
G
S
S
G
D
=25 oC unless otherwise noted)
PARAMETER
CONDITIONS
Drain-source voltage
Drain to current-continue
Symbol
MIN.
TYP.
MAX.
UNIT
V DSS
60
V
ID
±115
I DM
±800
V GSS
±20
mA
-pulsed
Gate to source voltage-continue
O
Total power dissipation (Derate above 25 C)
TJ
Storage temperature
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T STG
Document ID
Page 2
DS-231153
o
375
R θJA
Operation junction temperature
mW
225
PD
Junction to ambient thermal resistance
V
-55
-65
Issued Date
2009/08/10
o
+150
o
Revised Date
2010/05/10
C/W
+150
Revision
B
C
C
Page.
8
Formosa MS
SMD MOSFET
2N7002K1DW
Electrical characteristics (At T =25 C unless otherwise noted)
o
A
PARAMETER
CONDITIONS
Symbol
MIN.
V GS = 0V, I D = 10µA
BV DSS
60
TYP.
MAX.
UNIT
OFF CHARACTERISTICS
Drain-source breakdown voltage
V
1.0
V DS = 60V, V GS = 0V
V DS = 60V, V GS = 0V, T J = 125 OC
I DSS
Gate-body leakage current-forward
V GS = 20V, V DS =0
I GSSF
10
Gate-body leakage current-reverse
V GS = -20V, V DS =0
I GSSR
-10
µA
Gate threshold voltage
V DS = 10V, I D = 1mA
V GS(th)
2.0
V
Static drain-source on-resistance
V GS = 10V, I D = 0.5A
V GS = 5V, I D = 50mA
7.5
7.5
Ω
Forward transconductance, Note 1
V DS =10V, I D = 200mA*
Zero gate voltage drain current
µA
10
A
ON CHARACTERISTICS (Note 1)
1.0
1.85
R DS(ON)
g FS
msec
80
DYNAMIC CHARACTERISTICS
Intput capacitance
V DS = 25V, V GS = 0V,
f=1.0MHz
Output capacitance
Reverse transfer capacitance
C ISS
25
50
C OSS
10
25
C RSS
3.0
5.0
C ISS
25
50
C OSS
10
25
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time, Note 1
V DD = 30V, I D = 0.2A,
V GS =10V, R L =150Ω, R G =10Ω
Turn-Off Delay Time, Note 1
ns
Note 1. Pulse duration = 300µs, duty cycle >=1%
Gate Charge
Test Circuit
Switching
Test Circuit
V DD
V DD
RL
V IN
RL
V GS
D
D
V OUT
V GS
1mA
RG
G
DUT
G
RG
S
S
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TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 3
DS-231153
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
8
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE: R DS(ON) (Ω)
Rating and characteristic curves (2N7002K1DW)
GATE-SOURCE VOLTAGE: V GS (V)
Fig.3 Static drain-source on-state
resistance vs. gate-source voltage
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Document ID
Page 4
DS-231153
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
8
Formosa MS
SMD MOSFET
2N7002K1DW
Pinning information
Pinning information
Type number
Symbol
Marking code
RS
G
S
S
G
D
M
2N7002K1DW
D
RS: Device Marking Code
M: Date code
M
Jan
Feb
Odd
Years
1
2
3
4
5
6
7
8
E
F
H
J
K
L
N
P
Even
Years
Mar Apr
May Jun
Jul
Aug Sep
Oct
Nov
Dec
9
T
V
C
U
X
Y
Z
Suggested solder pad layout
SOT-363
0.025(0.65)
0.025(0.65)
0.051(1.3)
0.075(1.9) 0.098(2.5)
0.024(0.60)
0.0165(0.42)
Dimensions in inches and (millimeters)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 5
DS-231153
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
8
Formosa MS
SMD MOSFET
2N7002K1DW
Packing information
P0
P1
d
E
F
B
A
W
P
D2
D1
T
C
W1
D
unit:mm
Item
Symbol
Tolerance
SOT-363
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D1
D
D1
D2
E
F
P
P0
P1
T
W
W1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.36
2.40
1.20
1.50
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 6
DS-231153
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
8
Formosa MS
SMD MOSFET
2N7002K1DW
Reel packing
PACKAGE
SOT-363
REEL SIZE
7"
REEL
(pcs)
COMPONENT
SPACING
(m/m)
BOX
(pcs)
INNER
BOX
(m/m)
REEL
DIA,
(m/m)
3000
4.0
30,000
183*183*123
178
CARTON
SIZE
(m/m)
382*262*387
CARTON
(pcs)
APPROX.
GROSS WEIGHT
(kg)
9.50
240,000
Suggested thermal profiles for soldering processes
1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25%
2.Reflow soldering of surface-mount devices
Critical Zone
TL to TP
Tp
TP
Ramp-up
TL
TL
Tsmax
Temperature
Tsmin
tS
Preheat
Ramp-down
25
t25o C to Peak
Time
3.Reflow soldering
Profile Feature
Soldering Condition
Average ramp-up rate(T L to T P )
o
<3 C /sec
Preheat
-Temperature Min(Tsmin)
-Temperature Max(Tsmax)
-Time(min to max)(t s )
150 oC
200 oC
60~120sec
Tsmax to T L
-Ramp-upRate
<3 oC/sec
Time maintained above:
-Temperature(T L )
-Time(t L )
217 oC
60~260sec
255 oC-0/+5 oC
Peak Temperature(T P )
Time within 5 oC of actual Peak
Temperature(t P )
10~30sec
Ramp-down Rate
<6 oC/sec
Time 25 oC to Peak Temperature
<6minutes
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Page 7
DS-231153
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
8
Formosa MS
SMD MOSFET
2N7002K1DW
High reliability test capabilities
Item Test
Conditions
Reference
MIL-STD-750D
METHOD-2031
O
1. Solder Resistance
at 260 ± 5 C for 10 ± 2sec.
immerse body into solder 1/16"±1/32"
at 245±5 C for 5 sec.
MIL-STD-202F
METHOD-208
V DS =0.8 X BV DSS, V GS =0V at T J=150 OC for 168 hrs.
MIL-STD-750D
METHOD-1026
O
2. Solderability
3. High Temperature Reverse Bias
MIL-STD-750D
METHOD-1027
O
4. Operation Life Test
Continuous operation at max rated T A=25 C,
P C=P C(max) for 500hrs.
5. Pressure Cooker
15P SIG at T A=121 OC for 4 hrs.
6. Temperature Cycling
-55 C to +125 C dwelled for 30 min.
and transferred for 5min. total 10 cycles.
7. Thermal Shock
0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles.
MIL-STD-750D
METHOD-1056
8. Humidity
at T A=85 OC, RH=85% for 1000hrs.
MIL-STD-750D
METHOD-1038
9. High Temperature Storage Life
at 175 OC for 1000 hrs.
MIL-STD-750D
METHOD-1031
O
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FAX:886-2-22696141
JESD22-A102
MIL-STD-750D
METHOD-1051
O
Document ID
Page 8
DS-231153
Issued Date
2009/08/10
Revised Date
2010/05/10
Revision
B
Page.
8