Formosa MS SMD MOSFET 2N7002K1DW List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 3 Rating and characteristic curves........................................................ 4 Pinning information........................................................................... 5 Marking........................................................................................... 5 Suggested solder pad layout............................................................. 5 Packing information.......................................................................... 6 Reel packing.................................................................................... 7 Suggested thermal profiles for soldering processes............................. 7 High reliability test capabilities........................................................... 8 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 1 DS-231153 Issued Date 2009/08/10 Revised Date 2010/05/10 Revision B Page. 8 Formosa MS SMD MOSFET 2N7002K1DW Package outline Dual Channel 60V N-Channel Enhancement Mode MOSFET SOT-363 Features .087(2.20) .079(2.00) • R DS(ON), V GS@10V, I DS@500mA=7.5 Ω (max.) • R DS(ON), V GS@5V, I DS@50mA=7.5 Ω (max.) • Fast switching speed • Easily designed drive • ESD protection: 1000V • In compliance with EU RoHS 2002/95/EC directives. • Suffix "-H" indicates Halogen-free part, ex. 2N7002K1DW-H. 8° .096(2.45) .085(2.15) .018(0.46) .010(0.26) .053(1.35) .045(1.15) .026(0.65)Typ. .006(0.15) .003(0.08) .014(0.35) .006(0.15) .004(0.10) Max. Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-363 • Terminals : Solder plated, solderable per .043(1.10) .035(0.90) .016(0.40) .012(0.30) Dimensions in inches and (millimeters) MIL-STD-750, Method 2026 • Polarity : See Diagram • Mounting Position : Any • Weight : Approximated 0.006 gram M aximum ratings (AT T A D G S S G D =25 oC unless otherwise noted) PARAMETER CONDITIONS Drain-source voltage Drain to current-continue Symbol MIN. TYP. MAX. UNIT V DSS 60 V ID ±115 I DM ±800 V GSS ±20 mA -pulsed Gate to source voltage-continue O Total power dissipation (Derate above 25 C) TJ Storage temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 T STG Document ID Page 2 DS-231153 o 375 R θJA Operation junction temperature mW 225 PD Junction to ambient thermal resistance V -55 -65 Issued Date 2009/08/10 o +150 o Revised Date 2010/05/10 C/W +150 Revision B C C Page. 8 Formosa MS SMD MOSFET 2N7002K1DW Electrical characteristics (At T =25 C unless otherwise noted) o A PARAMETER CONDITIONS Symbol MIN. V GS = 0V, I D = 10µA BV DSS 60 TYP. MAX. UNIT OFF CHARACTERISTICS Drain-source breakdown voltage V 1.0 V DS = 60V, V GS = 0V V DS = 60V, V GS = 0V, T J = 125 OC I DSS Gate-body leakage current-forward V GS = 20V, V DS =0 I GSSF 10 Gate-body leakage current-reverse V GS = -20V, V DS =0 I GSSR -10 µA Gate threshold voltage V DS = 10V, I D = 1mA V GS(th) 2.0 V Static drain-source on-resistance V GS = 10V, I D = 0.5A V GS = 5V, I D = 50mA 7.5 7.5 Ω Forward transconductance, Note 1 V DS =10V, I D = 200mA* Zero gate voltage drain current µA 10 A ON CHARACTERISTICS (Note 1) 1.0 1.85 R DS(ON) g FS msec 80 DYNAMIC CHARACTERISTICS Intput capacitance V DS = 25V, V GS = 0V, f=1.0MHz Output capacitance Reverse transfer capacitance C ISS 25 50 C OSS 10 25 C RSS 3.0 5.0 C ISS 25 50 C OSS 10 25 pF SWITCHING CHARACTERISTICS Turn-On Delay Time, Note 1 V DD = 30V, I D = 0.2A, V GS =10V, R L =150Ω, R G =10Ω Turn-Off Delay Time, Note 1 ns Note 1. Pulse duration = 300µs, duty cycle >=1% Gate Charge Test Circuit Switching Test Circuit V DD V DD RL V IN RL V GS D D V OUT V GS 1mA RG G DUT G RG S S http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 3 DS-231153 Issued Date 2009/08/10 Revised Date 2010/05/10 Revision B Page. 8 STATIC DRAIN-SOURCE ON-STATE RESISTANCE: R DS(ON) (Ω) Rating and characteristic curves (2N7002K1DW) GATE-SOURCE VOLTAGE: V GS (V) Fig.3 Static drain-source on-state resistance vs. gate-source voltage http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 4 DS-231153 Issued Date 2009/08/10 Revised Date 2010/05/10 Revision B Page. 8 Formosa MS SMD MOSFET 2N7002K1DW Pinning information Pinning information Type number Symbol Marking code RS G S S G D M 2N7002K1DW D RS: Device Marking Code M: Date code M Jan Feb Odd Years 1 2 3 4 5 6 7 8 E F H J K L N P Even Years Mar Apr May Jun Jul Aug Sep Oct Nov Dec 9 T V C U X Y Z Suggested solder pad layout SOT-363 0.025(0.65) 0.025(0.65) 0.051(1.3) 0.075(1.9) 0.098(2.5) 0.024(0.60) 0.0165(0.42) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 5 DS-231153 Issued Date 2009/08/10 Revised Date 2010/05/10 Revision B Page. 8 Formosa MS SMD MOSFET 2N7002K1DW Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-363 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 2.36 2.40 1.20 1.50 178.00 62.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 6 DS-231153 Issued Date 2009/08/10 Revised Date 2010/05/10 Revision B Page. 8 Formosa MS SMD MOSFET 2N7002K1DW Reel packing PACKAGE SOT-363 REEL SIZE 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 9.50 240,000 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=5 oC ~40 oC Humidity=55%±25% 2.Reflow soldering of surface-mount devices Critical Zone TL to TP Tp TP Ramp-up TL TL Tsmax Temperature Tsmin tS Preheat Ramp-down 25 t25o C to Peak Time 3.Reflow soldering Profile Feature Soldering Condition Average ramp-up rate(T L to T P ) o <3 C /sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 150 oC 200 oC 60~120sec Tsmax to T L -Ramp-upRate <3 oC/sec Time maintained above: -Temperature(T L ) -Time(t L ) 217 oC 60~260sec 255 oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(t P ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 oC to Peak Temperature <6minutes http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Document ID Page 7 DS-231153 Issued Date 2009/08/10 Revised Date 2010/05/10 Revision B Page. 8 Formosa MS SMD MOSFET 2N7002K1DW High reliability test capabilities Item Test Conditions Reference MIL-STD-750D METHOD-2031 O 1. Solder Resistance at 260 ± 5 C for 10 ± 2sec. immerse body into solder 1/16"±1/32" at 245±5 C for 5 sec. MIL-STD-202F METHOD-208 V DS =0.8 X BV DSS, V GS =0V at T J=150 OC for 168 hrs. MIL-STD-750D METHOD-1026 O 2. Solderability 3. High Temperature Reverse Bias MIL-STD-750D METHOD-1027 O 4. Operation Life Test Continuous operation at max rated T A=25 C, P C=P C(max) for 500hrs. 5. Pressure Cooker 15P SIG at T A=121 OC for 4 hrs. 6. Temperature Cycling -55 C to +125 C dwelled for 30 min. and transferred for 5min. total 10 cycles. 7. Thermal Shock 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. MIL-STD-750D METHOD-1056 8. Humidity at T A=85 OC, RH=85% for 1000hrs. MIL-STD-750D METHOD-1038 9. High Temperature Storage Life at 175 OC for 1000 hrs. MIL-STD-750D METHOD-1031 O http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 JESD22-A102 MIL-STD-750D METHOD-1051 O Document ID Page 8 DS-231153 Issued Date 2009/08/10 Revised Date 2010/05/10 Revision B Page. 8