Formosa MS SMD Switching Diode Array BAS21T List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Rating and characteristic curves........................................................ 3 Pinning information........................................................................... 4 Marking........................................................................................... 4 Suggested solder pad layout............................................................. 4 Packing information.......................................................................... 5 Reel packing.................................................................................... 5 Suggested thermal profiles for soldering processes............................. 6 High reliability test capabilities...........................................................7 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 1 Document ID Issued Date DS-221948 2009/08/10 Revised Date - Revision Page. A 7 Formosa MS SMD Switching Diode BAS21T 150mW Surface Mount Switching Diode Array - 200V Package outline Features (B) 0.006 (0.15) 0.012 (0.30) .044(1.10) Mechanical data .036(0.90) 0.068 (1.70) • Fast speed switching. • For general purpose switching application. • High conductance. • Silicon epitaxial planar chip. • Suffix "-H" indicates Halogen-free part, ex.BAS21T-H. • Lead-free parts meet RoHS requirments. 0.060 (1.50) 0.020 (0.50)Max SOT-523 (C) (A) 0.034 (0.85) 0.004 (0.10)Min. 0.030 (0.75) 0.070 (1.75) • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, SOT-523 • Terminals : Solder plated, solderable per 0.032 (0.80) MIL-STD-750, Method 2026 0.004 (0.10) 0.008(0.20) 0.058 (1.45) 0.024 (0.60) • Polarity : Indicated by cathode band • Mounting Position : Any • Weight : Approximated 0.003 gram Dimensions in inches and (millimeters) Maximum ratings (AT T =25 C unless otherwise noted) o A PARAMETER Symbol Value UNIT VR 200 V Average Rectified Current IO 200 mA Forward Continuous Current I FM 400 mA DC Reverse Voltage Non-Repetitive Peak Forward Surge Current @ t = 1.0us @ t = 1.0 s Repetitive Peak Forward Surge Current 2.5 I FSM I FRM Thermal Resistance Junction to Ambient R èJA A 0.5 625 mA O 833 C/W Total Device Dissipation PD Operating Temperature Range Tj -55 ~ +150 o C Storage Temperature Range T STG -65 ~ +175 o C mW 150 V BR 250 V IR 0.1 15 uA Diode Capacitance,VR = 0V, f = 1.0MHz CT 5.0 pF Reverse Recovery Time T rr 50 nS Reverse Breakdown Voltage, IBR = 100µA Reverse Voltage Leakage Current O at T J =25 C at TJ =100 OC IF = IR = 10mA, RL = 50Ù Forward Voltage at IF = 100mAdc at IF = 200mAdc http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 2 1000 VF mV 1250 Document ID Issued Date DS-221948 2009/08/10 Revised Date - Revision Page. A 7 Rating and characteristic curves for each diode(BAS21T) FIG.1-TYPICAL FORWARD CHARACTERISTICS FIG.2-TYPICAL REVERSE CHARACTERISTICS 1 100 IR, INSTANTANEOUS RVERSE CURRENT,(uA) IF, INSTANTANEOUS FORWARD CURRENT,(A) TA = 150OC 0.1 TA = -40OC TA = 0OC 0.01 TA = 25OC TA = 75OC TA = 125OC 10 TA = 125OC 1 TA = 75OC 0.1 TA = 25OC 0.01 TA = 0OC 0.001 TA = -40OC TA = 150OC 0.001 0.0001 0 .2 .4 .6 .8 1.0 1.2 1.4 0 50 100 150 200 250 VF,INSTANTANOUS FORWARD VOLTAGE,(V) VR,INSTANTANOUS REVERSE VOLTAGE,(V) FIG.3-TYPICAL CAPACITANCE VS REVERSE VOLTAGE FIG.4-POWER DERATING CURVE, TOTAL PACKAGE 4.0 200 3.5 f = 1MHz Pd, POWER DISSIPATION,(mW) CT, TOTAL CAPALCAPACITANCE,(pF) 3.0 2.5 2.0 1.5 1.0 150 100 50 0.5 0 0 0 10 20 30 40 http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 0 100 200 TA, AMBIENT TEMPERATURE, (OC) VR, REVERSE VOLTAGE,(V) Page 3 Document ID Issued Date DS-221948 2009/08/10 Revised Date - Revision Page. A 7 Formosa MS SMD Switching Diode BAS21T Pinning information Type number Symbol Marking code A BAS21T B T3 C Suggested solder pad layout SOT-523 0.02(0.50) 0.02(0.50) 0.056(1.40) 0.02(0.50) 0.02(0.50) Dimensions in inches and (millimeters) http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 4 Document ID Issued Date DS-221948 2009/08/10 Revised Date - Revision Page. A 7 Formosa MS SMD Switching Diode BAS21T Packing information P0 P1 d E F B A W P D2 D1 T C W1 D unit:mm Item Symbol Tolerance SOT-523 Carrier width Carrier length Carrier depth Sprocket hole 13" Reel outside diameter 13" Reel inner diameter 7" Reel outside diameter 7" Reel inner diameter Feed hole diameter Sprocket hole position Punch hole position Punch hole pitch Sprocket hole pitch Embossment center Overall tape thickness Tape width Reel width A B C d D D1 D D1 D2 E F P P0 P1 T W W1 0.1 0.1 0.1 0.1 2.0 min 2.0 min 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.3 1.0 1.73 1.85 0.90 1.5 178.00 60.00 13.00 1.75 3.50 4.00 4.00 2.00 0.23 8.00 11.40 Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 5 Document ID Issued Date DS-221948 2009/08/10 Revised Date - Revision Page. A 7 Formosa MS SMD Switching Diode BAS21T Reel packing PACKAGE REEL SIZE SOT-523 7" REEL (pcs) COMPONENT SPACING (m/m) BOX (pcs) INNER BOX (m/m) REEL DIA, (m/m) 3,000 4.0 30,000 183*183*123 178 CARTON SIZE (m/m) 382*262*387 CARTON (pcs) APPROX. GROSS WEIGHT (kg) 240,000 9.5 Suggested thermal profiles for soldering processes 1.Storage environment: Temperature=10 oC~35 oC Humidity=65%±15% 2.Reflow soldering of surface-mount devices Critical Zone T L to T P tt P TP Ramp-up TL tt L Temperature T smax T smin TS tt s Preheat 25 Ramp-down T t25 oC to Peak Wave Soldering IR Reflow Time 3.Flow (wave)soldering (solder dipping) Profile Feature Soldering Condition Average ramp-up rate(T L to TP ) <3oC/sec Preheat -Temperature Min(Tsmin) -Temperature Max(Tsmax) -Time(min to max)(t s ) 100oC 150oC 60~120sec Tsmax to TL -Ramp-upRate <3oC/sec Time maintained above: -Temperature(TL ) -Time(tL ) 183oC 60~150sec 255oC-0/+5 oC Peak Temperature(T P ) Time within 5 oC of actual Peak Temperature(tP ) 10~30sec Ramp-down Rate <6 oC/sec Time 25 <6minutes to Peak Temperature http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 Page 6 Document ID Issued Date DS-221948 2009/08/10 Revised Date - Revision Page. A 7 Formosa MS SMD Switching Diode BAS21T High reliability test capabilities Item Test Conditions Reference O 1. Solder Resistance at 260±5 C for 10±2sec. immerse body into solder 1/16"±1/32" MIL-STD-750D METHOD-2031 2. Solderability at 245±5 OC for 5 sec. MIL-STD-202F METHOD-208 3. High Temperature Reverse Bias V R=80% rate at T A=150 OC for 168 hrs. MIL-STD-750D METHOD-1026 4. Forward Operation Life Rated average rectifier current at T=25 OC for 500hrs. MIL-STD-750D METHOD-1027 T A = 25 OC, I F = I O On state: power on for 5 min. off state: power off for 5 min. on and off for 500 cycles. MIL-STD-750D METHOD-1036 5. Intermittent Operation Life 6. Pressure Cooker 15P SIG at TA=121 OC for 4 hrs. 7. Temperature Cycling -55 OC to +125OC dwelled for 30 min. and transferred for 5min. total 10 cycles. 8. Thermal Shock 9. Forward Surge 10. Humidity 11. High Temperature Storage Life 12. Solvent Resistance http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 MIL-STD-750D METHOD-1051 MIL-STD-750D METHOD-1056 0 OC for 5 min. rise to 100 OC for 5 min. total 10 cycles. MIL-STD-750D METHOD-4066-2 8.3ms single half sine-wave superimposed on rated load, one surge. at TA=65 OC, RH=98% for 1000hrs. MIL-STD-750D METHOD-1038 at 175OC for 1000 hrs. MIL-STD-750D METHOD-1031 Dip into Freon at 25OC for 1 min. MIL-STD-202F METHOD-215 Page 7 Document ID Issued Date DS-221948 2009/08/10 Revised Date - Revision Page. A 7