SAMWIN SW50CPF06 DIODE TO-3P Features ■ Ultrafast recovery time ■ Low forward voltage drop ■ 150 °C operating junction temperature ■ Low leakage current ■ Designed and qualified according to JEDEC-JESD47 VR : 620V IF(AV) : 50A VF at IF : 1.5V 1 2 3 1. Anode 2. Gathode 3. Anode General Description This FRED is designed with optimized performance of forward voltage drop and ultrafast recovery time. the platinum doped life time control, guarantee the best overall performance ruggedness and reliability characteristics. This devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as freewheeling diode in low voltage inverters. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element. Order Codes Item Sales Type Marking Package Packaging 1 SW W 50CPF06 SW50CPF06 TO-3P TUBE Absolute maximum ratings Symbol VR IF(AV) TJ, TStg Parameter Value Unit Repetitive peak reverse voltage 620 V Average rectified forward current (@TC=150oC) 50 A -55 ~ + 150 oC Operating junction and storage temperatures Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol VR Parameter Breakdown voltage,blocking voltage Test conditions IR=100uA IF=3A VF IR CT Forward voltage Min. Typ. Max. 620 Unit V 0.9 1.13 V IF=50A 1.5 V IF=50A, TJ= 150 °C 1.3 V VR=600V 500 nA VR=600V, TJ= 150 °C 500 uA Reverse leakage current Junction capacitance VR=600V Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. 30 May. 2014. Rev.2.0 pF 1/4 SW50CPF06 SAMWIN DYNAMIC RECOVERY CHARACTERISTICS (TJ= 25 °C unless otherwise specified) Symbol Irrm Parameter Test conditions Min. Peak recovery current Trr Reverse recovery time Qrr Reverse recovery Charge I F=50A, di/dt=200A/us, VR =100V Typ. Max. Unit 5.9 A 59 ns 190 nC THERMAL - MECHANICAL SPECIFICATIONS Symbol Value Unit Rthjc Thermal resistance, Junction to case (Per Leg) Parameter 0.57 oC/W Rthjc Thermal resistance, Junction to case (Per Package) 0.62 oC/W Rthja Thermal resistance, Junction to ambient(Per Leg) 35.5 oC/W Rthja Thermal resistance, Junction to ambient(Per Package) 34.3 oC/W Fig. 1. Typical Forward Voltage Drop Characteristics Fig. 3. Typical Junction Capacitance vs. Reverse Voltage Fig. 2. Typical Values of Reverse Current vs. Reverse Voltage Fig. 4. Max. Thermal Impedance Z thJC Characteristics (Per Leg) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev.2.0 2/4 SAMWIN SW50CPF06 Fig 5. Max. Thermal Impedance Z thJC Characteristics (Per Package) Fig. 7. Typical Reverse Recovery Time vs. di/dt Fig. 6. Typical Reverse Recovery Current vs. di/dt Fig. 8. Typical Stored Charge vs. di/dt Fig. 9. Reverse Recovery Parameter Test Circuit & waveform 10V VGS (DRIVER) di/dt IF (DUT) IRM Diode reverse current Diode recovery dv/dt VR (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev.2.0 3/4 SAMWIN SW50CPF06 Fig. 10. Unclamped Inductive Test Circuit Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. May. 2014. Rev.2.0 4/4