SAMWIN SW640U N-channel TO-220 MOSFET Features TO-220 BVDSS :200 V ID ■ High ruggedness ■ RDS(ON) (Max180mΩ)@VGS=10V ■ Gate Charge (Typical 25nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 18A RDS(ON) :180mΩ 1 2 2 3 1. Gate 2. Drain 3. Source 1 General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and switch mode power supply. 3 Order Codes Item 1 Sales Type SW P 640 Marking SW640U Package TO-220 Packaging TUBE Absolute maximum ratings Symbol VDSS ID Parameter Drain to Source Voltage Unit 200 V (@TC=25oC) 18* A (@TC=100oC) 11.3* A 72 A ± 30 V Continuous Drain Current Continuous Drain Current Value IDM Drain current pulsed VGS Gate to Source Voltage EAS Single pulsed Avalanche Energy (note 2) 428 mJ EAR Repetitive Avalanche Energy (note 1) 50 mJ dv/dt Peak diode Recovery dv/dt (note 3) 5 V/ns PD TSTG, TJ TL Total power dissipation (note 1) (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 178.2 W 1.4 W/oC -55 ~ + 150 oC 300 oC *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Rthjc Thermal resistance, Junction to case Rthcs Thermal resistance, Case to Sink Rthja Thermal resistance, Junction to ambient Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Value Unit 0.7 oC/W oC/W 54.4 Oct. 2014. Rev.1.0 oC/W 1/5 SAMWIN SW640U Electrical characteristic ( TC = 25oC unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient ID=250uA, referenced to 25oC IDSS Drain to source leakage current IGSS 200 V V/oC 0.2 VDS=200V, VGS=0V 1 uA VDS=160V, TC=125oC 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -100 nA 4 V 180 mΩ On characteristics VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA RDS(ON) Drain to source on state resistance VGS=10V, ID =9A 143 Forward Transconductance VDS = 20V, ID =9 A 11 Gfs 2 S Dynamic characteristics Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance 74 td(on) Turn on delay time 7 tr td(off) tf Qg Rising time Turn off delay time 907 VGS=0V, VDS=25V, f=1MHz 280 pF 42 VDS=100V, ID=18A，RG=25Ω (note 4，5) ns 54 Fall time 38 Total gate charge Qgs Gate-source charge Qgd Gate-drain charge 25 VDS=160V, VGS=10V, ID=18A (note 4，5) 6 nC 12 Source to drain diode ratings characteristics Symbol Parameter Test conditions IS Continuous source current ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET VSD Diode forward voltage drop. IS=18A, VGS=0V Trr Reverse recovery time Qrr Reverse recovery Charge IS=18A, VGS=0V, dIF/dt=100A/us Min. Typ. Max. Unit 18 A 72 A 1.5 V 142 ns 965 nC ※. Notes 1. Repeatitive rating : pulse width limited by junction temperature. 2. L = 2.65mH, IAS =18A, VDD =50V, RG=25Ω, Starting TJ = 25oC 3. ISD ≤ 18A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC 4. Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2014. Rev.1.0 2/5 SAMWIN Fig. 1. On-state characteristics Fig. 3. Gate charge characteristics Fig 5. Breakdown Voltage Variation vs. Junction Temperature SW640U Fig. 2. On-resistance variation vs. drain current and gate voltage Fig. 4. On state current vs. diode forward voltage Fig. 6. On resistance variation vs. junction temperature Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2014. Rev.1.0 3/5 SAMWIN SW640U Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Capacitance Characteristics Fig. 10. Gate charge test circuit & waveform VGS Same type as DUT QG 10V VDS QGS QGD DUT VGS 2mA Charge Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. nC Oct. 2014. Rev.1.0 4/5 SAMWIN SW640U Fig. 11. Switching time test circuit & waveform VDS RL 90% VDS RGS VDD 10VIN DUT 10% 10% VIN td(on) td(off) tr tON tf tOFF Fig. 12. Unclamped Inductive switching test circuit & waveform Fig. 13. Peak diode recovery dv/dt test circuit & waveform DUT + V DS 10V VGS (DRIVER) L IS di/dt IS (DUT) IRM VDS RG 10VGS Diode reverse current VDD Diode recovery dv/dt Same type as DUT VDS (DUT) *. dv/dt controlled by RG *. Is controlled by pulse period VF VDD Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Oct. 2014. Rev.1.0 5/5