INTERSIL IRF610

IRF610
Data Sheet
June 1999
3.3A, 200V, 1.500 Ohm, N-Channel Power
MOSFET
This N-Channel enhancement mode silicon gate power field
effect transistor is an advanced power MOSFET designed,
tested, and guaranteed to withstand a specified level of
energy in the breakdown avalanche mode of operation. All of
these power MOSFETs are designed for applications such
as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17442.
Ordering Information
PART NUMBER
File Number
1576.3
Features
• 3.3A, 200V
• rDS(ON) = 1.500Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
PACKAGE
BRAND
D
IRF610
TO-220AB
IRF610
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
4-190
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999
IRF610
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg
IRF610
200
200
3.3
2.1
8
±20
43
0.34
46
-55 to 150
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications
TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BVDSS
VGS = 0V, ID = 250µA (Figure 10)
200
-
-
V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250µA
2
-
4
V
VDS = Max Rating, VGS = 0V
-
-
25
µA
VDS = Max Rating x 0.8, VGS = 0V, TJ = 125oC
-
-
250
µA
3.3
-
-
A
-
-
±100
nA
-
1.0
1.5
Ω
0.8
1.3
-
S
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current (Note 2)
ID(ON)
Gate to Source Leakage Current
IGSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
rDS(ON)
gfs
td(ON)
Rise Time
tr
Turn-Off Delay Time
td(OFF)
Fall Time
VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7)
VGS = ±20V
VGS = 10V, ID = 1.6A (Figures 8, 9)
VDS ≥ 50V, ID = 1.6A (Figure 12)
VDD = 100V, ID ≈ 3.3A, RG = 24Ω, RL = 30Ω
MOSFET Switching Times are
Essentially Independent of Operating
Temperature
tf
Total Gate Charge
(Gate to Source + Gate to Drain)
Qg(TOT)
Gate to Source Charge
Qgs
Gate to Drain “Miller” Charge
Qgd
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Internal Drain Inductance
LD
VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS,
Ig(REF) = 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating
Temperature
VGS = 0V, VDS = 25V, f = 1MHz
(Figure 11)
Measured From the
Contact Screw on Tab to
Center of Die
Measured From the Drain
Lead, 6mm (0.25in) From
Package to Center of Die
Internal Source Inductance
LS
Thermal Resistance Junction to Case
RθJC
Thermal Resistance Junction to Ambient
RθJA
4-191
Measured From the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
Free Air Operation
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
D
-
8
12
ns
-
17
26
ns
-
13
21
ns
-
9
13
ns
-
5.3
8.2
nC
-
1.2
-
nC
-
3.0
-
nC
-
135
-
pF
-
60
-
pF
-
16
-
pF
-
3.5
-
nH
-
4.5
-
nH
-
7.5
-
nH
-
-
2.9
oC/W
-
-
80
oC/W
LD
G
LS
S
IRF610
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Continuous Source to Drain Current
TEST CONDITIONS
ISD
Pulse Source to Drain Current
(Note 3)
Modified MOSFET Symbol
Showing the Integral
Reverse P-N Junction
Rectifier
ISDM
D
MIN
TYP
MAX
UNITS
-
-
3.3
A
-
-
8
A
-
-
2.0
V
75
160
310
ns
0.33
0.9
1.4
µC
G
S
Source to Drain Diode Voltage (Note 2)
TJ = 25oC, ISD = 3.3A, VGS = 0V (Figure 13)
VSD
Reverse Recovery Time
TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs
TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs
trr
Reverse Recovery Charge
QRR
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 6.4mH, RG = 25Ω, peak IAS = 3.3A.
Typical Performance Curves
Unless Otherwise Specified
5.0
ID, DRAIN CURRENT (A)
1.0
0.8
0.6
0.4
0.2
0
0
50
100
4.0
3.0
2.0
1.0
0
25
150
50
TC, CASE TEMPERATURE (oC)
75
100
150
125
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10
ZθJC, TRANSIENT
THERMAL IMPEDANCE (oC/W)
POWER DISSIPATION MULTIPLIER
1.2
0.5
1
0.2
0.1
PDM
0.05
0.02
0.1 0.01
0.01
10-5
t1
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC + TC
10-4
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
4-192
1
10
IRF610
Typical Performance Curves
100
5
TJ = 150oC SINGLE PULSE
TC = 25oC
10µs
10
100µs
1ms
1
10ms
VGS = 10V
VGS = 8V
ID, DRAIN CURRENT (A)
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
ID, DRAIN CURRENT (A)
Unless Otherwise Specified (Continued)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
4
VGS = 7V
3
2
VGS = 6V
1
VGS = 5V
DC
0.1
0
1000
100
10
VDS , DRAIN TO SOURCE VOLTAGE (V)
1
20
5
ID, DRAIN CURRENT (A)
VGS = 8V
3
VGS = 7V
2
VGS = 6V
1
1
TJ = 150oC
0.1
TJ = 25oC
VGS = 5V
VGS = 4V
0
6
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
VGS = 10V
4
8
10
10-2
0
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
3.0
NORMALIZED DRAIN TO SOURCE
ON RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
9
6
VGS = 10V
3
VGS = 20V
2.4
4
6
ID, DRAIN CURRENT (A)
8
10
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
4-193
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 3.2A
1.8
1.2
0.6
0
0
2
10
FIGURE 7. TRANSFER CHARACTERISTICS
15
0
100
10
4
2
60
FIGURE 5. OUTPUT CHARACTERISTICS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0
40
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
rDS(ON), ON STATE RESISTANCE (Ω)
VGS = 4V
80
0
-60
-40
-20
0
20
40
60
80 100
120 140 160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
IRF610
Typical Performance Curves
400
ID = 250µA
1.05
0.95
240
CISS
160
COSS
0.85
0.75
-60
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS = CDS + CGD
320
1.15
C, CAPACITANCE (pF)
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.25
Unless Otherwise Specified (Continued)
80
-40
-20
0
20
40
60
80
0
100 120 140 160
CRSS
1
2
TJ, JUNCTION TEMPERATURE (oC)
gfs, TRANSCONDUCTANCE (S)
1.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≥ 50V
1.2
TJ = 25oC
TJ = 150oC
0.9
0.6
0.3
0
102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
ISD, SOURCE TO DRAIN CURRENT (A)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
5
10
2
5
VDS, DRAIN TO SOURCE VOLTAGE (V)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
100
TJ = 150oC
10
TJ = 25oC
1
0
1
2
3
ID, DRAIN CURRENT (A)
4
0
5
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
VGS, GATE TO SOURCE VOLTAGE (V)
20
0.4
0.8
1.2
1.6
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
ID = 3.2A
VDS = 100V
16
VDS = 40V
12
8
VDS = 160V
4
0
0
2
4
6
8
10
Qg, GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
4-194
2.0
IRF610
Test Circuits and Waveforms
VDS
BVDSS
L
tP
VARY tP TO OBTAIN
+
RG
REQUIRED PEAK IAS
VDS
IAS
VDD
VDD
-
VGS
DUT
tP
0V
IAS
0
0.01Ω
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON
tOFF
td(ON)
td(OFF)
tf
tr
RL
VDS
90%
90%
+
RG
-
VDD
10%
10%
0
DUT
90%
VGS
VGS
0
FIGURE 17. SWITCHING TIME TEST CIRCUIT
0.2µF
50%
PULSE WIDTH
10%
FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDS
(ISOLATED
SUPPLY)
CURRENT
REGULATOR
12V
BATTERY
50%
VDD
Qg(TOT)
SAME TYPE
AS DUT
50kΩ
Qgd
0.3µF
VGS
Qgs
D
VDS
DUT
G
0
Ig(REF)
S
0
IG CURRENT
SAMPLING
RESISTOR
VDS
ID CURRENT
SAMPLING
RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT
4-195
IG(REF)
0
FIGURE 20. GATE CHARGE WAVEFORMS
IRF610
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4-196
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