Transistor 2SA1739 Silicon PNP epitaxial planer type For high speed switching Unit: mm 2.1±0.1 ■ Features +0.1 0.3–0 0.65 1.3±0.1 0.65 3 Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –15 V Emitter to base voltage VEBO –4 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 Unit 0.15–0.05 Ratings 0 to 0.1 Symbol 1:Base 2:Emitter 3:Collector 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : AX (Ta=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO VCB = –8V, IE = 0 Emitter cutoff current IEBO VEB = –3V, IC = 0 hFE1* VCE = –1V, IC = –10mA 50 30 Forward current transfer ratio 1 2 (Ta=25˚C) Parameter ■ Electrical Characteristics 0.425 0.2 ■ Absolute Maximum Ratings 1.25±0.1 0.7±0.1 ● High-speed switch (pair with 2SC3938) Low collector to emitter saturation voltage VCE(sat). S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.0±0.2 ● 0.9±0.1 ● 0.425 typ max Unit – 0.1 µA – 0.1 µA 150 hFE2 VCE = –1V, IC = –1mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz 1500 MHz Collector output capacitance Cob VCB = –5V, IE = 0, f = 1MHz 1 pF Turn-on time ton (Note 1) Next page 12 ns Turn-off time toff (Note 1) Next page 20 ns Storage time tstg (Note 1) Next page 19 ns *h FE1 – 0.1 800 – 0.2 V Rank classification Rank Q R hFE1 50 ~ 120 90 ~ 150 1 Transistor 2SA1739 Switching time measurement circuit ton, toff Test Circuit VBB VCC=–1.5V VBB=–10V VCC=–3V 2kΩ 62Ω 508Ω 30Ω Vout 52Ω 0.1µF Vin Vout 34Ω 51Ω 51Ω Vin 240 Collector power dissipation PC (mW) 0.1µF Vin PC — Ta tstg Test Circuit 0 10% Vin 90% 90% Vout 0 90% 90% Vout 10% toff Vin=9.0V ton toff Vin=–5.8V Vin=9.8V VBB=Ground VBB=–8.0V 200 160 120 80 40 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) VCE(sat) — IC Ta=25˚C IB=–600µA –50 –500µA –400µA –40 –300µA –30 –200µA Collector to emitter saturation voltage VCE(sat) (V) –100 –60 Collector current IC (mA) VBE(sat) — IC IC/IB=10 –30 –10 Ta=75˚C 25˚C –25˚C –3 –1 – 0.3 –20 –100µA –10 – 0.1 –2 –4 –6 –8 –10 –12 – 0.01 –1 –3 –10 –30 Transition frequency fT (MHz) Forward current transfer ratio hFE 2000 160 120 80 25˚C –25˚C 800 400 0 –3 –10 –30 Collector current IC (mA) –100 1 3 10 –10 –30 –100 –300 –1000 Cob — VCB 1200 Ta=75˚C –3 2.4 1600 –1 – 0.01 –1 Collector current IC (mA) VCB=–10V f=200MHz Ta=25˚C VCE=–10V 2 –100 –300 –1000 fT — IE 2400 200 Ta=–25˚C 25˚C 75˚C –1 Collector current IC (mA) hFE — IC 240 0 – 0.1 –0.3 –3 – 0.03 Collector to emitter voltage VCE (V) 40 –10 – 0.1 Collector output capacitance Cob (pF) 0 IC/IB=10 –30 – 0.3 – 0.03 0 –100 Base to emitter saturation voltage VBE(sat) (V) IC — VCE 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V)