KEXIN 2SA1738

Transistors
IC
SMD Type
Silicon PNP Epitaxial Planar Type
2SA1738
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
High-speed switch
1
0.55
Features
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
2
+0.1
0.95-0.1
+0.1
1.9-0.1
Low collector to emitter saturation voltage VCE(sat).
+0.05
0.1-0.01
+0.1
0.97-0.1
Mini type package, allowing downsizing of the equipment and
0-0.1
+0.1
0.38-0.1
automatic insertion through the tape packing and the magazine packing.
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
-15
V
Collector-emitter voltage
VCEO
-15
V
Emitter-base voltage
VEBO
-4
V
Collector current
IC
-50
mA
Peak collector current
ICP
-100
mA
mW
Collector power dissipation
PC
200
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
IC
SMD Type
2SA1738
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
VCB = -8 V, IE = 0
Emitter cutoff current
IEBO
VCE = -3 V, IC = 0
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
fT
Collector output capacitance
Cob
Turn-on time
ton
Turn-off time
toff
Storage time
tstg
Note 1:
hFE Classification
AK
Marking
Rank
Q
R
hFE
50 120
90 150
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Min
VCE = -1 V, IC = -10 mA
50
VCE = -1 V, IC = -1 mA
30
VCE(sat) IC = -10 mA, IB = -1 mA
Transition frequency
2
Testconditons
VCB = -10 V, IE = 10 mA, f = 200 MHz
VCB = -5 V, IE = 0, f = 1 MHz
Note 1
Typ
Unit
-0.1
ìA
-0.1
ìA
150
-0.1
800
Max
-0.2
V
1500
MHz
1
pF
12
ns
20
ns
19
ns