PANASONIC 2SC5243

Power Transistors
2SC5243
Silicon NPN triple diffusion mesa type
For horizontal deflection output
Unit: mm
φ 3.3±0.2
5.0±0.3
3.0
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
1700
V
Collector to emitter voltage
VCES
1700
V
Emitter to base voltage
VEBO
6
V
Collector current
IC
15
A
Peak collector current
ICP*
30
A
Peak base current
IBP
10
A
Collector power TC=25°C
Ta=25°C
dissipation
Junction temperature
Tj
Storage temperature
Tstg
*Non-repetitive
200
PC
3.5
4.0
2.0
2.0
26.0±0.5
10.0
1.5
1.5
2.0±0.3
Solder Dip
●
1.5
●
High breakdown voltage, and high reliability through the use of a
glass passivation layer
High-speed switching
Wide area of safe operation (ASO)
20.0±0.5
2.5
●
6.0
■ Features
3.0
20.0±0.5
2.7±0.3
3.0±0.3
1.0±0.2
0.6±0.2
5.45±0.3
10.9±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TOP–3L Package
W
150
˚C
–55 to +150
˚C
peak
■ Electrical Characteristics
(TC=25˚C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector cutoff current
ICBO
VCB = 1700V, IE = 0
1
µA
Emitter cutoff current
IEBO
VEB = 5V, IC = 0
50
µA
Forward current transfer ratio
hFE
VCE = 5V, IC = 10A
Collector to emitter saturation voltage
VCE(sat)
IC = 10A, IB = 2.8A
5
12
Base to emitter saturation voltage
VBE(sat)
IC = 10A, IB = 2.8A
Transition frequency
fT
VCE = 10V, IC = 0.1A, f = 0.5MHz
Storage time
tstg
IC = 12A, IB1 = 2.4A, IB2 = –4.8A,
1.5
2.5
µs
Fall time
tf
Resistance loaded
0.12
0.2
µs
3
1.5
3
V
V
MHz
1
Power Transistors
2SC5243
PC — Ta
IC — VCE
(1)
180
14
160
140
120
100
80
60
12
IB=1000mA
800mA
600mA
10
400mA
8
200mA
6
4
40
(3)
20
2
0
20
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
6
8
10
25˚C
10
–25˚C
1
0.1
0.01
12
10
3
1
0.3
TC=–25˚C
0.03
0.01
0.1
25˚C
100˚C
0.3
1
3
10
30
50
10
TC=–25˚C
1
25˚C
100˚C
0.1
100
Collector current IC (A)
Note: Rth was measured at Ta=25˚C and under natural convection
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
100
(1)
10
(2)
1
0.1
10–2
10–1
1
Time t (s)
20
<1mA
10
Rth(t) — t
10–3
30
0
1
1000
0.01
10–4
40
10
0.01
0.1
100
10
f=64kHz, TC=25˚C
Area of safe operation for
the single pulse load curve
due to discharge in the
high-voltage rectifier tube
during horizontal operation
IC/IB=3.5
Collector current IC (A)
Base to emitter saturation voltage VBE(sat) (V)
30
1
Area of safe operation, horizontal operation ASO
100
IC/IB=3.5
0.1
Collector current IC (A)
VBE(sat) — IC
100
Collector current IC (A)
Thermal resistance Rth(t) (˚C/W)
TC=100˚C
Collector to emitter voltage VCE (V)
VCE(sat) — IC
2
100
(2)
0
0.1
VCE=5V
Forward current transfer ratio hFE
200
1000
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.0W)
220
0
Collector to emitter saturation voltage VCE(sat) (V)
hFE — IC
16
Collector current IC (A)
Collector power dissipation PC (W)
240
10
102
103
104
0
400
800
1200
1600
2000
Collector to emitter voltage VCE (V)