ESD206-B1-02V Data Sheet (554 KB, EN)

TVS Diode
Transient Voltage Suppressor Diodes
ESD206-B1-02V
Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode
ESD206-B1-02V
Data Sheet
Revision 1.2, 2013-12-19
Final
Power Management & Multimarket
ESD206-B1-02V
Revision History: Rev. 1.1, 2013-11-26
Page or Item
Subjects (major changes since previous revision)
Revision 1.2, 2013-12-19
5
Update Table 2-2)
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Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
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UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
2
Revision 1.2, 2013-12-19
ESD206-B1-02V
Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode
1
Ultra Low Clamping Bi-directional ESD / Transient / Surge
Protection Diode
1.1
Features
•
•
•
•
•
•
•
ESD/Transient/Surge protection of one data / Vbus line exceeding standard:
– IEC61000-4-2 (ESD): ±30 kV (air/contact discharge)
– IEC61000-4-4 (EFT): ±50 A (5/50 ns)
– IEC61000-4-5 (surge): ±6 A (8/20 μs)
Medium capacitance: CL = 12 pF (typ.)
Bi-directional symmetrical working voltage: -5.5 V to +5.5 V
Low leakage current
Very low ESD clamping voltage: 9 V (typ.)
Very low dynamic resistance: 0.15 Ω (typ.)
Pb-free (RoHS compliant) and halogen free package
1.2
•
•
Application Examples
Audio Line, Speaker, Headset, Microphone Protection
Human Interface Devices (Keyboard, Touchpad, Buttons)
1.3
Product Description
Pin 2
Pin 1
Pin 2
Pin 1
PG-SC79-2-1
a) Pin configuration
b) Schematic diagram
PG-SC 79-2-1_PinConf_and_SchematicDiag.vsd
Figure 1-1 Pin Configuration and Schematic Diagram
Table 1-1
Ordering Information
Type
Package
Configuration
Marking code
ESD206-B1-02V
SC79
1 line, bi-directional
e
Final Data Sheet
3
Revision 1.2, 2013-12-19
ESD206-B1-02V
Characteristics
2
Characteristics
2.1
Maximum Ratings
Table 2-1
Maximum Ratings at TA = 25 °C, unless otherwise specified1)
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
-
-
30
kV
IPP
-
-
6
A
Operating temperature range
TOP
-55
-
125
°C
Storage temperature
Tstg
-65
-
150
°C
2)
ESD air / contact discharge
Peak pulse current (tp = 8/20 μs)
3)
1) Device is electrically symmetrical
2) VESD according to IEC61000-4-2
3) IPP according to IEC61000-4-5
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Electrical Characteristics at TA = 25 °C, unless otherwise specified
!"#
Figure 2-1 Definitions of electrical characteristics
Final Data Sheet
4
Revision 1.2, 2013-12-19
ESD206-B1-02V
Characteristics
Table 2-2
DC Characteristics at TA = 25 °C, unless otherwise specified1)
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Reverse working voltage VRWM
-
-
5.5
V
Reverse current
IR
-
-
50
nA
Trigger voltage
Vt1
6.1
-
-
V
Holding voltage
Vh
6.1
8
9.5
V
IR = 10 mA
Unit
Note / Test Condition
pF
VR = 0 V, f = 1 MHz
VR = 5.5 V
1) Device is electrically symmetrical
Table 2-3
AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Line capacitance
Table 2-4
CL
Values
Min.
Typ.
Max.
-
12
20
ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Clamping voltage
VCL
2)
Clamping voltage
Dynamic resistance
1)
RDYN
Values
Unit
Note / Test Condition
V
ITLP = 16 A
Min.
Typ.
Max.
-
8
-
-
11.5
-
ITLP = 30 A
-
8
-
IPP = 1 A
-
10
-
IPP = 6 A
-
0.15
-
Ω
1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP
conditions: Z0 = 50 Ω, tp = 100 ns, tr , = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristic between ITLP1 = 10 A and ITLP2 = 40 A. Please refer to
Application Note AN210[1].
2) IPP according to IEC61000-4-5 (tp = 8/20 μs)
Final Data Sheet
5
Revision 1.2, 2013-12-19
ESD206-B1-02V
Typical Characteristics at TA = 25 °C, unless otherwise specified
3
Typical Characteristics at TA = 25 °C, unless otherwise specified
10-8
-9
IR [A]
10
10-10
10-11
-12
10
-6
-4
-2
0
VR [V]
2
4
6
Figure 3-1 Reverse current, IR = (VR)
13
12
CL [pF]
11
10
9
8
7
6
-6
-5
-4
-3
-2
-1
0
VR [V]
1
2
3
4
5
6
Figure 3-2 Line capacitance: CL = f(VR), f = 1MHz
Final Data Sheet
6
Revision 1.2, 2013-12-19
ESD206-B1-02V
Typical Characteristics at TA = 25 °C, unless otherwise specified
70
40
ESD206-B1-02V
RDYN
35
60
30
50
25
40
20
30
15
RDYN = 0.15 Ω
ITLP [A]
20
10
10
5
0
0
-10
-5
-20
-10
RDYN = 0.15 Ω
-30
-15
-40
-20
-50
-25
-60
-30
-70
-35
-80
-20
-15
-10
-5
Equivalent VIEC [kV]
80
0
5
10
15
-40
20
VTLP [V]
Figure 3-3 Clamping voltage VTLP = f(ITLP)[1]
Note: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of
dynamic resistance using least squares fit of TLP characteristic between ITLP1 = 10 A and ITLP2 = 40 A. The
equivalent stress level VIEC according IEC 61000-4-2 (R = 330 Ω, C = 150 pF) is calculated at the broad
peak of the IEC waveform at t = 30 ns with 2 A / kV
Final Data Sheet
7
Revision 1.2, 2013-12-19
ESD206-B1-02V
Typical Characteristics at TA = 25 °C, unless otherwise specified
8
ESD206-B1-02V
RDYN
7
6
5
4
3
RDYN = 0.5 Ω
2
IPP [A]
1
0
-1
-2
RDYN = 0.7 Ω
-3
-4
-5
-6
-7
-8
-15
-10
-5
0
VCL [V]
5
10
15
Figure 3-4 Pulse current (IEC61000-4-5) versus clamping voltage: IPP = f(VCL)
Final Data Sheet
8
Revision 1.2, 2013-12-19
ESD206-B1-02V
Typical Characteristics at TA = 25 °C, unless otherwise specified
100
Scope: 6 GHz, 20 GS/s
75
VCL [V]
50
VCL-max-peak = 65 V
25
VCL-30ns-peak = 8 V
0
-25
-50
0
100
200
tp [ns]
300
400
Figure 3-5 Clamping voltage at +8 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
50
Scope: 6 GHz, 20 GS/s
25
VCL [V]
0
-25
VCL-max-peak = -65 V
-50
VCL-30ns-peak = -8 V
-75
-100
0
100
200
tp [ns]
300
400
Figure 3-6 Clamping voltage at -8 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
Final Data Sheet
9
Revision 1.2, 2013-12-19
ESD206-B1-02V
Typical Characteristics at TA = 25 °C, unless otherwise specified
150
Scope: 6 GHz, 20 GS/s
125
100
VCL [V]
75
VCL-max-peak = 105 V
50
VCL-30ns-peak = 10 V
25
0
-25
-50
0
100
200
tp [ns]
300
400
Figure 3-7 Clamping voltage at +15 kV discharge according IEC61000-4-2 (R = 330 Ohm, C = 150 pF)
50
Scope: 6 GHz, 20 GS/s
25
0
VCL [V]
-25
-50
-75
VCL-max-peak = -119 V
-100
VCL-30ns-peak = -10 V
-125
-150
0
100
200
tp [ns]
300
400
Figure 3-8 Clamping voltage at -15 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF)
Final Data Sheet
10
Revision 1.2, 2013-12-19
ESD206-B1-02V
Package Information
4
Package Information
4.1
SC79
0.2
M
A
+0.05
0.13 -0.03
0.8 ±0.1
A
1
0.3 ±0.05
0.2 ±0.05
Cathode
marking
1.2 ±0.1
1.6 ±0.1
2
0.55 ±0.04
SC79-PO V02
1.35
0.35
Figure 4-1 SC79: Package outline(dimension in mm)
0.35
SC79-FP V02
Figure 4-2 SC79: Footprint (dimension in mm)
Cathode
marking
0.2
8
1.96
Reel with 2 mm Pitch
2
1.33
Standard
4
0.4
Cathode
marking
0.93
0.66
SC79-TP V05
Figure 4-3 SC79: Tape and reel (dimension in mm)
Figure 4-4 SC79: Marking example
Final Data Sheet
11
Revision 1.2, 2013-12-19
ESD206-B1-02V
References
References
[1]
Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
Final Data Sheet
12
Revision 1.2, 2013-12-19
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