TVS Diode Transient Voltage Suppressor Diodes ESD206-B1-02V Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode ESD206-B1-02V Data Sheet Revision 1.2, 2013-12-19 Final Power Management & Multimarket ESD206-B1-02V Revision History: Rev. 1.1, 2013-11-26 Page or Item Subjects (major changes since previous revision) Revision 1.2, 2013-12-19 5 Update Table 2-2) Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 2 Revision 1.2, 2013-12-19 ESD206-B1-02V Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode 1 Ultra Low Clamping Bi-directional ESD / Transient / Surge Protection Diode 1.1 Features • • • • • • • ESD/Transient/Surge protection of one data / Vbus line exceeding standard: – IEC61000-4-2 (ESD): ±30 kV (air/contact discharge) – IEC61000-4-4 (EFT): ±50 A (5/50 ns) – IEC61000-4-5 (surge): ±6 A (8/20 μs) Medium capacitance: CL = 12 pF (typ.) Bi-directional symmetrical working voltage: -5.5 V to +5.5 V Low leakage current Very low ESD clamping voltage: 9 V (typ.) Very low dynamic resistance: 0.15 Ω (typ.) Pb-free (RoHS compliant) and halogen free package 1.2 • • Application Examples Audio Line, Speaker, Headset, Microphone Protection Human Interface Devices (Keyboard, Touchpad, Buttons) 1.3 Product Description Pin 2 Pin 1 Pin 2 Pin 1 PG-SC79-2-1 a) Pin configuration b) Schematic diagram PG-SC 79-2-1_PinConf_and_SchematicDiag.vsd Figure 1-1 Pin Configuration and Schematic Diagram Table 1-1 Ordering Information Type Package Configuration Marking code ESD206-B1-02V SC79 1 line, bi-directional e Final Data Sheet 3 Revision 1.2, 2013-12-19 ESD206-B1-02V Characteristics 2 Characteristics 2.1 Maximum Ratings Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified1) Parameter Symbol Values Unit Min. Typ. Max. VESD - - 30 kV IPP - - 6 A Operating temperature range TOP -55 - 125 °C Storage temperature Tstg -65 - 150 °C 2) ESD air / contact discharge Peak pulse current (tp = 8/20 μs) 3) 1) Device is electrically symmetrical 2) VESD according to IEC61000-4-2 3) IPP according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 2.2 Electrical Characteristics at TA = 25 °C, unless otherwise specified !"# Figure 2-1 Definitions of electrical characteristics Final Data Sheet 4 Revision 1.2, 2013-12-19 ESD206-B1-02V Characteristics Table 2-2 DC Characteristics at TA = 25 °C, unless otherwise specified1) Parameter Symbol Values Unit Note / Test Condition Min. Typ. Max. Reverse working voltage VRWM - - 5.5 V Reverse current IR - - 50 nA Trigger voltage Vt1 6.1 - - V Holding voltage Vh 6.1 8 9.5 V IR = 10 mA Unit Note / Test Condition pF VR = 0 V, f = 1 MHz VR = 5.5 V 1) Device is electrically symmetrical Table 2-3 AC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Line capacitance Table 2-4 CL Values Min. Typ. Max. - 12 20 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol 1) Clamping voltage VCL 2) Clamping voltage Dynamic resistance 1) RDYN Values Unit Note / Test Condition V ITLP = 16 A Min. Typ. Max. - 8 - - 11.5 - ITLP = 30 A - 8 - IPP = 1 A - 10 - IPP = 6 A - 0.15 - Ω 1) ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω, tp = 100 ns, tr , = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristic between ITLP1 = 10 A and ITLP2 = 40 A. Please refer to Application Note AN210[1]. 2) IPP according to IEC61000-4-5 (tp = 8/20 μs) Final Data Sheet 5 Revision 1.2, 2013-12-19 ESD206-B1-02V Typical Characteristics at TA = 25 °C, unless otherwise specified 3 Typical Characteristics at TA = 25 °C, unless otherwise specified 10-8 -9 IR [A] 10 10-10 10-11 -12 10 -6 -4 -2 0 VR [V] 2 4 6 Figure 3-1 Reverse current, IR = (VR) 13 12 CL [pF] 11 10 9 8 7 6 -6 -5 -4 -3 -2 -1 0 VR [V] 1 2 3 4 5 6 Figure 3-2 Line capacitance: CL = f(VR), f = 1MHz Final Data Sheet 6 Revision 1.2, 2013-12-19 ESD206-B1-02V Typical Characteristics at TA = 25 °C, unless otherwise specified 70 40 ESD206-B1-02V RDYN 35 60 30 50 25 40 20 30 15 RDYN = 0.15 Ω ITLP [A] 20 10 10 5 0 0 -10 -5 -20 -10 RDYN = 0.15 Ω -30 -15 -40 -20 -50 -25 -60 -30 -70 -35 -80 -20 -15 -10 -5 Equivalent VIEC [kV] 80 0 5 10 15 -40 20 VTLP [V] Figure 3-3 Clamping voltage VTLP = f(ITLP)[1] Note: TLP parameter: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristic between ITLP1 = 10 A and ITLP2 = 40 A. The equivalent stress level VIEC according IEC 61000-4-2 (R = 330 Ω, C = 150 pF) is calculated at the broad peak of the IEC waveform at t = 30 ns with 2 A / kV Final Data Sheet 7 Revision 1.2, 2013-12-19 ESD206-B1-02V Typical Characteristics at TA = 25 °C, unless otherwise specified 8 ESD206-B1-02V RDYN 7 6 5 4 3 RDYN = 0.5 Ω 2 IPP [A] 1 0 -1 -2 RDYN = 0.7 Ω -3 -4 -5 -6 -7 -8 -15 -10 -5 0 VCL [V] 5 10 15 Figure 3-4 Pulse current (IEC61000-4-5) versus clamping voltage: IPP = f(VCL) Final Data Sheet 8 Revision 1.2, 2013-12-19 ESD206-B1-02V Typical Characteristics at TA = 25 °C, unless otherwise specified 100 Scope: 6 GHz, 20 GS/s 75 VCL [V] 50 VCL-max-peak = 65 V 25 VCL-30ns-peak = 8 V 0 -25 -50 0 100 200 tp [ns] 300 400 Figure 3-5 Clamping voltage at +8 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF) 50 Scope: 6 GHz, 20 GS/s 25 VCL [V] 0 -25 VCL-max-peak = -65 V -50 VCL-30ns-peak = -8 V -75 -100 0 100 200 tp [ns] 300 400 Figure 3-6 Clamping voltage at -8 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF) Final Data Sheet 9 Revision 1.2, 2013-12-19 ESD206-B1-02V Typical Characteristics at TA = 25 °C, unless otherwise specified 150 Scope: 6 GHz, 20 GS/s 125 100 VCL [V] 75 VCL-max-peak = 105 V 50 VCL-30ns-peak = 10 V 25 0 -25 -50 0 100 200 tp [ns] 300 400 Figure 3-7 Clamping voltage at +15 kV discharge according IEC61000-4-2 (R = 330 Ohm, C = 150 pF) 50 Scope: 6 GHz, 20 GS/s 25 0 VCL [V] -25 -50 -75 VCL-max-peak = -119 V -100 VCL-30ns-peak = -10 V -125 -150 0 100 200 tp [ns] 300 400 Figure 3-8 Clamping voltage at -15 kV discharge according IEC61000-4-2 (R = 330 Ω, C = 150 pF) Final Data Sheet 10 Revision 1.2, 2013-12-19 ESD206-B1-02V Package Information 4 Package Information 4.1 SC79 0.2 M A +0.05 0.13 -0.03 0.8 ±0.1 A 1 0.3 ±0.05 0.2 ±0.05 Cathode marking 1.2 ±0.1 1.6 ±0.1 2 0.55 ±0.04 SC79-PO V02 1.35 0.35 Figure 4-1 SC79: Package outline(dimension in mm) 0.35 SC79-FP V02 Figure 4-2 SC79: Footprint (dimension in mm) Cathode marking 0.2 8 1.96 Reel with 2 mm Pitch 2 1.33 Standard 4 0.4 Cathode marking 0.93 0.66 SC79-TP V05 Figure 4-3 SC79: Tape and reel (dimension in mm) Figure 4-4 SC79: Marking example Final Data Sheet 11 Revision 1.2, 2013-12-19 ESD206-B1-02V References References [1] Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP Characterization Methodology Final Data Sheet 12 Revision 1.2, 2013-12-19 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG