ESD300-B1-02LRH Data Sheet (530 KB, EN)

TVS Diode
Transient Voltage Suppressor Diodes
ESD300-B1-02LRH
Low Clamping & Low Capacitance ESD/Surge Protection Diode
ESD300-B1-02LRH
Data Sheet
Revision 1.2, 2013-11-26
Final
Power Management & Multimarket
ESD300-B1-02LRH
Revision History: Revision 1.1, 2013-06-17
Page or Item
Subjects (major changes since previous revision)
Revision 1.2, 2013-11-26
4
Update of Figure 2-1)
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
2
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
Low Clamping & Low Capacitance ESD/Surge Protection Diode
1
Low Clamping & Low Capacitance ESD/Surge Protection Diode
1.1
Features
•
•
•
•
•
•
•
•
Extremely high ESD and surge protection
– IEC61000-4-2 (ESD): ±30 kV (air/contact discharge)
– IEC61000-4-5 (surge): ±18 A (8/20 μs)
Low clamping voltage VCL < 8 V (8 kV contact)
Maximum peak pulse power PPP = 260 W (8/20 μs)
Extremely low dynamic resistance: RDYN = 0.23 Ω typ.
Supports applications with signal voltage 3.3 V max.
Line capacitance: CL = typ. 1.2 pF
Package TSLP-2-17 compatible to SOD882D leadless ultra small Surface-Mounted Device (SMD)
Size 1 mm x 0.6 mm x 0.39 mm (0402)
1.2
•
•
•
Application Examples
Reliable ESD and surge protection of highly susceptible IC/ASICs in computers and peripherals, audio,
headset, human digital interfaces, video equipment, cellular handsets and accessories and portable
electronics
Dedicated solution to boost ESD and surge protection performance in miniaturized modern electronics
10/100/1000 Ethernet
1.3
Product Description
Pin 1 Marking
Pin 1
Pin 1
Pin 2
TSLP-2-17
Pin 2
a) Pin configuration
b) Schematic diagram
Configuration _Schematic_ Diagram.vst.vsd
Figure 1-1 Pin Configuration and Schematic Diagram
Table 1-1
Ordering Information
Type
Package
Configuration
Marking code
ESD300-B1-02LRH
TSLP-2-17
1 line, bi-directional
S3
Final Data Sheet
3
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
Characteristics
2
Characteristics
2.1
Maximum Ratings
Table 2-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
-30
-30
-
30
30
IPP
-18
-
18
A
Peak pulse power (tp = 8/20 μs)
PPP
-
-
260
W
Operating temperature range
TOP
-55
-
125
°C
150
°C
1)
ESD
contact discharge
air discharge
kV
VESD
Peak pulse current (tp = 8/20 μs)2)
2)
Storage temperature
Tstg
-65
1) VESD according to IEC61000-4-2 (R = 330 , C = 150 pF discharge network)
2) IPP according to IEC61000-4-5 (tp = 8/20 μs)
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.2
Electrical Characteristics at TA = 25 °C, unless otherwise specified
!"#
Figure 2-1 Definitions of electrical characteristics
Final Data Sheet
4
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
Characteristics
Table 2-2
DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
Typ.
Max.
Reverse working voltage VRWM
-3.3
-
3.3
V
Reverse current
-
-
100
nA
VR = 3.3 V
Unit
Note / Test Condition
pF
VR = 0 V, f = 1 MHz
Table 2-3
IR
RF Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Line capacitance
Table 2-4
CL
Values
Min.
Typ.
Max.
-
1.2
1.8
ESD Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Clamping voltage
VCL
Clamping voltage2)
VCL
Values
Unit
Note / Test Condition
V
VESD = 8 kV, tp= 30 ns
contact discharge
V
Min.
Typ.
Max.
-
8
-
-
5
8.5
10.5
-
tp = 8/20 µs
IPP = 1 A
IPP = 12 A
IPP = 18 A
-
9.5
12.5
-
tp = 100 ns
IPP = 16 A
IPP = 30 A
Clamping voltage3)
Dynamic resistance3)
RDYN
0.23
Ω
1) VESD according to IEC61000-4-2 (R = 330 Ω, C = 150 pF discharge network)
2) IPP according to IEC61000-4-5 (tp = 8/20 μs)
3)ANSI/ESD STM5.5.1 - Electrostatic Discharge Sensitive Testing using Transmission Line Pulse (TLP) Model.
TLP conditions: Z0 = 50 Ω, tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = 30 ns to t2 = 60 ns, extraction
of dynamic resistance using least squares fit of TLP characteristic between ITLP1 = 10 A and ITLP2 = 40 A. Please
refer to Application Note AN210 [1]
Final Data Sheet
5
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
Typical Characteristics at TA = 25 °C, unless otherwise specified
Typical Characteristics at TA = 25 °C, unless otherwise specified
3
10-6
-7
10
10-8
IR [mA]
10-9
10-10
10-11
10-12
-13
10
-3.5 -3 -2.5 -2 -1.5 -1 -0.5 0 0.5
VR [V]
1
1.5
2
2.5
3
3.5
3
3.5
Figure 3-1 Reverse current: IR = f(VR)
4
3.5
3
CL [pF]
2.5
2
1.5
1
0.5
0
-3.5 -3 -2.5 -2 -1.5 -1 -0.5
0 0.5
VR [V]
1
1.5
2
2.5
Figure 3-2 Line capacitance: CL = f(VR), f = 1MHz
Final Data Sheet
6
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
Typical Characteristics at TA = 25 °C, unless otherwise specified
60
30
ESD300-B1-02LRH
RDYN
50
25
40
20
30
15
20
10
10
5
0
0
-10
-5
-20
-10
Equivalent VIEC [kV]
ITLP [A]
RDYN = 0.223 Ω
RDYN = 0.227 Ω
-30
-15
-40
-20
-50
-25
-60
-20
-15
-10
-5
0
5
10
15
-30
20
VTLP [V]
Figure 3-3 Clamping voltage (TLP): ITLP = f(VTLP) according ANSI/ESD STM5.5.1 - Electrostatic Discharge
Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z0 = 50 Ω,
tp = 100 ns, tr = 0.6 ns, ITLP and VTLP averaging window: t1 = ns to t2 = 60 ns, extraction of
dynamic resistance using squares fit to TLP characteristics between ITLP1 = 10 A and
ITLP2 = 40 A. Please refer to Application Note AN210 [1]
Final Data Sheet
7
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
Typical Characteristics at TA = 25 °C, unless otherwise specified
25
ESD300-B1-02LRH
RDYN
20
RDYN = 0.3 Ω
15
10
IPP [A]
5
0
-5
-10
RDYN = 0.3 Ω
-15
-20
-25
-15
-10
-5
0
VCL [V]
5
10
15
Figure 3-4 Pulse current (IEC61000-4-5) versus clamping voltage: IPP = f(VCL)
Final Data Sheet
8
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
Typical Characteristics at TA = 25 °C, unless otherwise specified
70
Scope: 6 GHz, 20 GS/s
60
50
VCL [V]
40
VCL-max-peak = 64 V
30
VCL-30ns-peak = 8 V
20
10
0
-10
-20
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 3-5 IEC61000-4-2 : VCL = f(t), 8 kV positive pulse from pin 1 to pin 2
20
Scope: 6 GHz, 20 GS/s
10
0
VCL [V]
-10
-20
-30
-40
VCL-max-peak = -63 V
-50
VCL-30ns-peak = -8 V
-60
-70
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 3-6 IEC61000-4-2 : VCL = f(t), 8 kV negative pulse from pin 1 to pin 2
Final Data Sheet
9
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
Typical Characteristics at TA = 25 °C, unless otherwise specified
100
Scope: 6 GHz, 20 GS/s
80
VCL [V]
60
VCL-max-peak = 92 V
40
VCL-30ns-peak = 11 V
20
0
-20
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 3-7 IEC61000-4-2 : VCL = f(t), 15 kV positive pulse from pin 1 to pin 2
20
Scope: 6 GHz, 20 GS/s
0
VCL [V]
-20
-40
VCL-max-peak = -91 V
-60
VCL-30ns-peak = -10 V
-80
-100
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 3-8 IEC61000-4-2 : VCL = f(t), 15 kV negative pulse from pin 1 to pin 2
Final Data Sheet
10
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
Package Information
4
Package Information
4.1
TSLP-2-17
Top view
Bottom view
0.39 +0.01
-0.03
0.6 ±0.05
0.05 MAX.
1±0.05
0.65 ±0.05
2
0.25 ±0.035 1)
1
0.5 ±0.035 1)
Cathode
marking
1) Dimension applies to plated terminal
TSLP-2-7-PO V02
0.45
Copper
Solder mask
0.375
0.35
0.275
1
0.925
0.3
0.35
0.6
0.275
Figure 4-1 TSLP-2-17 Package outline (dimension in mm)
Stencil apertures
TSLP-2-7-FP V01
Figure 4-2 TSLP-2-17 Footprint (dimension in mm)
0.5
1.16
8
4
0.76
Orientation
marking
TSLP-2-7-TP V03
Figure 4-3 TSLP-2-17 Packing (dimension in mm)
Type code
12
Cathode marking
TSLP-2-18-MK V01
Figure 4-4 TSLP-2-17 Marking (example)
Final Data Sheet
11
Revision 1.2, 2013-11-26
ESD300-B1-02LRH
References
References
[1]
Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
Final Data Sheet
12
Revision 1.2, 2013-11-26
w w w . i n f i n e o n . c o m
Published by Infineon Technologies AG
Similar pages