ESD217-B1-02EL Data Sheet (410 KB, EN)

Protection Device
TVS (Transient Voltage Suppressor)
ESD217-B1-02EL
Bi-directional, +14 / -8 V, 9 pF, 0402, RoHS and Halogen Free compliant
ESD217-B1-02EL
Data Sheet
Revision 1.1, 2014-11-11
Final
Power Management & Multimarket
Edition 2014-11-11
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ESD217-B1-02EL
Product Overview
1
Product Overview
1.1
Features
•
•
•
•
•
•
•
ESD / transient protection according to:
– IEC61000-4-2 (ESD): ±30 kV (air), ±25 kV (contact)
– IEC61000-4-4 (EFT): ±3 kV / ±60 A (5/50 ns)
– IEC61000-4-5 (Surge): ±3 A (8/20 µs)
Asymmetrical, bi-directional working voltage up to VRWM = +14 V / -8 V
Low capacitance: CL = 9 pF (typical)
Low clamping voltage: VCL = 26 V (typical) at ITLP = 16 A
Very low reverse current: IR < 1 nA (typical)
Ultra low dynamic resistance: RDYN = 0.2 Ω (typical)
Pb-free (RoHS compliant) and halogen free package
1.2
•
•
•
•
•
Application Examples
USB 2.0, 10/100 Ethernet, Firewire, DVI
Mobile communication
Consumer products (STD, MP3, DVD, DSC...)
LCD display, camera
Notebooks and destop computers, peripherals
1.3
Product Description
Pin 1 marking
(lasered)
Pin 1
Pin 1
Pin 2
Pin 2
PinConf_and_SchematicDiag.vsd
Figure 1-1 Pin Configuration and Schematic Diagram
Table 1-1
Part Information
Type
Package
Configuration
Marking code
ESD217-B1-02EL
TSLP-2-19
1 line, bi-directional
B
Final Data Sheet
3
Revision 1.1, 2014-11-11
ESD217-B1-02EL
Characteristics
2
Characteristics
Table 2-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
1)
Values
Unit
ESD air discharge
ESD contact discharge1)
VESD
±30
±25
kV
Peak pulse power2)
PPK
85
W
Peak pulse current2)
IPP
±3
A
Operating temperature range
TOP
-55 to 125
°C
Storage temperature
1) VESD according to IEC61000-4-2
Tstg
-65 to 150
°C
2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.1
Electrical Characteristics at TA = 25 °C, unless otherwise specified
$% & %'
&
%( &
&(
!" !! # Figure 2-1 Definitions of electrical characteristics
Final Data Sheet
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ESD217-B1-02EL
Characteristics
Table 2-2
DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Reverse working voltage VRWM
Breakdown voltage
Reverse current
Table 2-3
Values
Min.
Typ.
Max.
-8
–
14
14.5
8.5
17
11.5
20
14
–
<1
50
VBR
IR
Unit
Note / Test Condition
V
Pin 2 to Pin1
V
IR = 1 mA
Pin2 to Pin1
Pin1 to Pin2
nA
VR = 3.3 V
Unit
Note / Test Condition
VR = 0 V, f = 1 MHz
AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Min.
Typ.
Max.
Line capacitance
CL
–
9
13
pF
Series inductance
LS
–
0.4
–
nH
Table 2-4
ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Clamping voltage1)
VCL
2)
Clamping voltage
Dynamic resistance1)
RDYN
Values
Unit
Note / Test Condition
V
ITLP = 16 A, tp = 100 ns
Min.
Typ.
Max.
–
26
–
–
29
–
ITLP = 30 A, tp = 100 ns
–
25.5
–
IPP = 3 A, tp = 8/20 µs,
Pin2 to Pin1
–
24
–
IPP = 3 A, tp = 8/20 µs,
Pin1 to Pin2
–
0.2
–
–
0.4
–
Ω
tp = 100 ns, Pin2 to Pin1
tp = 100 ns, Pin1 to Pin2
1) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 300ps.
2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Final Data Sheet
5
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ESD217-B1-02EL
Typical Characteristics Diagrams
3
Typical Characteristics Diagrams
Typical characteristics diagrams at TA = 25°C, unless otherwise specified
10-3
-4
10
-5
10
10-6
-7
IR [A]
10
10-8
-9
10
10-10
10-11
-12
10
10-13
-8
-6
-4
-2
0
2
4
VR [V]
6
8
10
12
14
12
14
CL [pF]
Figure 3-1 Reverse leakage current: IR = f(VR), pin 2 to pin 1
13
12
11
10
9
8
7
6
5
4
3
2
1
0
1 MHz
1 GHz
-8
-6
-4
-2
0
2
4
VR [V]
6
8
10
Figure 3-2 Line capacitance: CL = f(VR), pin 2 to pin 1
Final Data Sheet
6
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ESD217-B1-02EL
Typical Characteristics Diagrams
45
22.5
40
20
35
17.5
30
15
25
12.5
20
ITLP [A]
25
ESD217-B1-02EL
RDYN
RDYN = 0.2 Ω
10
15
7.5
10
5
5
2.5
0
0
-5
-2.5
-10
-5
-15
-7.5
-20
RDYN = 0.4 Ω
Equivalent VIEC [kV]
50
-10
-25
-12.5
-30
-15
-35
-17.5
-40
-20
-45
-22.5
-50
-25
-45-40-35-30-25-20-15-10 -5 0 5 10 15 20 25 30 35 40 45
VTLP [V]
Figure 3-3 Clamping voltage (TLP): ITLP = f(VTLP)[1], pin 2 to pin 1
Final Data Sheet
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ESD217-B1-02EL
Typical Characteristics Diagrams
3.5
3
2.5
2
1.5
1
IPP [A]
0.5
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-30
-25
-20
-15
-10
-5
0
5
VCL [V]
10
15
20
25
30
Figure 3-4 Clamping voltage(Surge): IPP = f(VCL)[1], pin 2 to pin 1
Final Data Sheet
8
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ESD217-B1-02EL
Typical Characteristics Diagrams
0
Insertion Loss [dB]
-5
-10
-15
-20
ESD217-B1-02EL
-25
-30
10
100
1000
10000
f [MHz]
Figure 3-5 Insertion loss vs. frequency in a 50 Ω system
Final Data Sheet
9
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ESD217-B1-02EL
Package Information
4
Package Information
4.1
TSLP-2-19
Top view
Bottom view
0.31 +0.01
-0.02
0.6 ±0.05
1±0.05
2
1
0.25 ±0.035 1)
0.65 ±0.05
0.05 MAX.
0.5 ±0.035 1)
Pin 1
marking
1) Dimension applies to plated terminals
TSLP-2-19, -20-PO V01
Figure 4-1 TSLP-2-19 Package outline
0.28
0.35
Solder mask
0.38
0.93
0.3
1
Copper
0.28
0.45
0.35
0.6
Stencil apertures
TSLP-2-19, -20-FP V01
Figure 4-2 TSLP-2-19 Footprint
0.4
1.16
Pin 1
marking
8
4
0.76
TSLP-2-19, -20-TP V02
Figure 4-3 TSLP-2-19 Packing
Type code
12
Pin 1 marking
TSLP-2-19, -20-MK V01
Figure 4-4 TSLP-2-19 Marking example, Type code see: Table 1-1 “Part Information” on Page 3
Final Data Sheet
10
Revision 1.1, 2014-11-11
ESD217-B1-02EL
References
References
[1]
Infineon AG - Application Note AN210: Effective ESD Protection design at System Level Using VF-TLP
Characterization Methodology
[2]
Infineon AG - Recommendations for PCB Assembly of Infineon TSLP and TSSLP Packages
Final Data Sheet
7
Revision 1.1, 2014-11-11
ESD217-B1-02EL
Revision History Rev. 1.0, 2014-05-16
Page or Item
Subjects (major changes since previous revision)
Revision 1.1, 2014-11-11
3
Table 1-1) updated
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
2
Revision 1.1, 2014-11-11
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Published by Infineon Technologies AG
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