Protection Device TVS (Transient Voltage Suppressor) ESD311-U1-02N Uni-directional, 15 V, 210 pF, 0603, RoHS and Halogen Free compliant ESD311-U1-02N Data Sheet Revision 1.0, 2014-05-28 Final Power Management & Multimarket Edition 2014-05-28 Published by Infineon Technologies AG 81726 Munich, Germany © 2014 Infineon Technologies AG All Rights Reserved. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. ESD311-U1-02N Product Overview 1 Product Overview 1.1 Features • • • • • • • ESD / Transient / Surge protection according to: – IEC61000-4-2 (ESD): ±30 kV (air / contact discharge) – IEC61000-4-4 (EFT): ±4 kV / ±80 A (5/50 ns) – IEC61000-4-5 (surge): ±28 A (8/20 μs) Uni-directional working voltage up to VRWM = 15 V Low capacitance: CL = 210 pF (typical) Low clamping voltage VCL = 29 V (typical) at IPP = 28 A Low reverse current. IR < 1 nA (typical) Small and flat-profile SMD plastic package: 1.6 mm x 0.8 mm x 0.375 mm. Pb-free (RoHS compliant) and halogen free package 1.2 • Application Examples Surge protection of USB VBUS lines in mobile devices 1.3 Product Description Pin 1 Pin 1 marking (lasered) Pin 1 Pin 2 Pin 2 PinConf_and_SchematicDiag.vsd Figure 1-1 Pin Configuration and Schematic Diagram (in mm) Table 1-1 Part Information Type Package Configuration Marking code ESD311-U1-02N TSNP-2-2 uni-directional A Final Data Sheet 3 Revision 1.0, 2014-05-28 ESD311-U1-02N Maximum Ratings 2 Maximum Ratings Table 2-1 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol ESD air / contact discharge 1) Values Unit VESD ±30 kV PPK 800 W Peak pulse current IPP 28 A Operating temperature range TOP -40 to 125 °C Storage temperature 1) VESD according to IEC61000-4-2 Tstg -65 to 150 °C Peak pulse power 2) 2) 2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5 Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. 3 Electrical Characteristics %& ' &( ' &) ' ') !" !!# $ Figure 3-1 Definitions of electrical characteristics Final Data Sheet 4 Revision 1.0, 2014-05-28 ESD311-U1-02N Electrical Characteristics Table 3-1 DC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit Min. Typ. Max. Note / Test Condition Reverse working voltage VRWM – – 15 V Breakdown voltage VBR 16 17 – V IT = 1 mA Reverse current IR – <1 100 nA VR = 15V Unit Note / Test Condition pF VR = 0 V, f = 1 MHz Table 3-2 AC Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Line capacitance Table 3-3 CL Values Min. Typ. Max. – 210 290 ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Clamping voltage 1) VCL 2) Clamping voltage Dynamic resistance 1) Values Unit Note / Test Condition V ITLP = 16 A, tp = 100 ns Min. Typ. Max. – 22 26.5 – 23 28 ITLP = 30 A, tp = 100 ns – 21 25.5 IPP = 1 A, tp = 8/20 µs – 29 35 IPP = 28 A, tp = 8/20 µs – 0.07 – Ω tp = 100 ns 1) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100 ns, tr = 600 ps. RDYN 2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5 Final Data Sheet 5 Revision 1.0, 2014-05-28 ESD311-U1-02N Typical Characteristics Diagrams 4 Typical Characteristics Diagrams Typical characteristics diagrams at TA = 25°C, unless otherwise specified -3 10 10-4 10-5 -6 10 -7 IR [A] 10 -8 10 -9 10 10-10 10-11 -12 10 0 2 4 6 8 VR [V] 10 12 14 16 Figure 4-1 Reverse leakage current: IR = f(VR) 220 200 180 CL [pF] 160 140 120 100 80 60 0 1 2 3 4 5 6 7 8 VR [V] 9 10 11 12 13 14 15 Figure 4-2 Line capacitance: CL = f(VR) Final Data Sheet 6 Revision 1.0, 2014-05-28 ESD311-U1-02N Typical Characteristics Diagrams 75 Scope: 6 GHz, 20 GS/s VCL [V] 50 VCL-max-peak = 42 V 25 VCL-30ns-peak = 20 V 0 -25 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-3 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse from pin 1 to pin 2 25 Scope: 6 GHz, 20 GS/s VCL [V] 0 -25 VCL-max-peak = -31 V -50 -75 -50 VCL-30ns-peak = -1 V 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-4 Clamping voltage (ESD) VCL = f(t), 8 kV negative pulse from pin 1 to pin 2 Final Data Sheet 7 Revision 1.0, 2014-05-28 ESD311-U1-02N Typical Characteristics Diagrams 75 Scope: 6 GHz, 20 GS/s VCL [V] 50 VCL-max-peak = 20 V VCL-30ns-peak = -20 V 25 0 -25 -50 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-5 Clamping voltage (ESD) VCL = f(t), 15 kV positive pulse from pin 1 to pin 2 25 Scope: 6 GHz, 20 GS/s VCL [V] 0 -25 VCL-max-peak = -52 V -50 -75 -50 VCL-30ns-peak = -1 V 0 50 100 150 200 tp [ns] 250 300 350 400 450 Figure 4-6 Clamping voltage (ESD) VCL = f(t), 15 kV negative pulse from pin 1 to pin 2 Final Data Sheet 8 Revision 1.0, 2014-05-28 ESD311-U1-02N Typical Characteristics Diagrams 40 60 30 RDYN = 0.07 Ω ITLP [A] 40 20 20 10 0 0 -20 -40 -10 -20 RDYN = 0.05 Ω -60 -30 -80 -40 -30 -25 -20 -15 -10 Equivalent VIEC [kV] 80 ESD311-U1-02N RDYN -5 0 5 10 15 20 25 30 VTLP [V] Figure 4-7 Clamping voltage (TLP): ITLP = f(VTLP)[1], pin 1 to pin 2 Final Data Sheet 9 Revision 1.0, 2014-05-28 ESD311-U1-02N Typical Characteristics Diagrams 40 30 20 10 IPP [A] 0 -10 -20 -30 -40 -50 -60 -15 -10 -5 0 5 10 VCL [V] 15 20 25 30 35 Figure 4-8 Pulse current (Surge): IPP = f(VCL)[1], pin 1 to pin 2 Final Data Sheet 10 Revision 1.0, 2014-05-28 ESD311-U1-02N 5.1 TSNP-2-2 Top view Bottom view 0.7 ±0.05 0.1 A 0.95 1.6 ±0.05 A 0.02 MAX. 0.35 ±0.05 0.4 MAX. 0.8 ±0.05 B 0.1 B Package Information 0.75 ±0.05 5 0.1 B Package Information 0.15 x 45° Pin 1 marking TSNP-2-2-PO V01 Figure 5-1 TSNP-2-2: Package outline 0.7 0.4 0.35 0.75 0.75 0.4 0.35 0.7 0.7 0.7 Copper Stencil apertures Solder mask TSNP-2-2-FP V01 Figure 5-2 TSNP-2-2: Footprint 4 8 1.75 Pin 1 marking 0.5 0.95 TSNP-2-2-TP V01 Figure 5-3 TSNP-2-2: Packing Type code 1 Pin 1 marking Date code (M) TSNP-2-2-MK V01 Figure 5-4 TSNP-2-2: Marking example, Type code see: Table 1-1 “Part Information” on Page 3 Final Data Sheet 11 Revision 1.0, 2014-05-28 ESD311-U1-02N Revision History: Rev. 0.9.1, 2014-05-20 Page or Item Subjects (major changes since previous revision) Revision 1.0, 2014-05-28 All Status change to final Trademarks of Infineon Technologies AG AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last Trademarks Update 2010-10-26 Final Data Sheet 2 Revision 1.0, 2014-05-28 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG