ESD311-U1-02N Data Sheet (557 KB, EN)

Protection Device
TVS (Transient Voltage Suppressor)
ESD311-U1-02N
Uni-directional, 15 V, 210 pF, 0603, RoHS and Halogen Free compliant
ESD311-U1-02N
Data Sheet
Revision 1.0, 2014-05-28
Final
Power Management & Multimarket
Edition 2014-05-28
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
ESD311-U1-02N
Product Overview
1
Product Overview
1.1
Features
•
•
•
•
•
•
•
ESD / Transient / Surge protection according to:
– IEC61000-4-2 (ESD): ±30 kV (air / contact discharge)
– IEC61000-4-4 (EFT): ±4 kV / ±80 A (5/50 ns)
– IEC61000-4-5 (surge): ±28 A (8/20 μs)
Uni-directional working voltage up to VRWM = 15 V
Low capacitance: CL = 210 pF (typical)
Low clamping voltage VCL = 29 V (typical) at IPP = 28 A
Low reverse current. IR < 1 nA (typical)
Small and flat-profile SMD plastic package: 1.6 mm x 0.8 mm x 0.375 mm.
Pb-free (RoHS compliant) and halogen free package
1.2
•
Application Examples
Surge protection of USB VBUS lines in mobile devices
1.3
Product Description
Pin 1
Pin 1 marking
(lasered)
Pin 1
Pin 2
Pin 2
PinConf_and_SchematicDiag.vsd
Figure 1-1 Pin Configuration and Schematic Diagram (in mm)
Table 1-1
Part Information
Type
Package
Configuration
Marking code
ESD311-U1-02N
TSNP-2-2
uni-directional
A
Final Data Sheet
3
Revision 1.0, 2014-05-28
ESD311-U1-02N
Maximum Ratings
2
Maximum Ratings
Table 2-1
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
ESD air / contact discharge
1)
Values
Unit
VESD
±30
kV
PPK
800
W
Peak pulse current
IPP
28
A
Operating temperature range
TOP
-40 to 125
°C
Storage temperature
1) VESD according to IEC61000-4-2
Tstg
-65 to 150
°C
Peak pulse power
2)
2)
2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
3
Electrical Characteristics
%& ' &(
'
&) '
')
!" !!# $ Figure 3-1 Definitions of electrical characteristics
Final Data Sheet
4
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ESD311-U1-02N
Electrical Characteristics
Table 3-1
DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Note / Test Condition
Reverse working voltage
VRWM
–
–
15
V
Breakdown voltage
VBR
16
17
–
V
IT = 1 mA
Reverse current
IR
–
<1
100
nA
VR = 15V
Unit
Note / Test Condition
pF
VR = 0 V, f = 1 MHz
Table 3-2
AC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Line capacitance
Table 3-3
CL
Values
Min.
Typ.
Max.
–
210
290
ESD and Surge Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Clamping voltage
1)
VCL
2)
Clamping voltage
Dynamic resistance
1)
Values
Unit
Note / Test Condition
V
ITLP = 16 A, tp = 100 ns
Min.
Typ.
Max.
–
22
26.5
–
23
28
ITLP = 30 A, tp = 100 ns
–
21
25.5
IPP = 1 A, tp = 8/20 µs
–
29
35
IPP = 28 A, tp = 8/20 µs
–
0.07
–
Ω
tp = 100 ns
1) Please refer to Application Note AN210[1]. TLP parameter: Z0 = 50 Ω , tp = 100 ns, tr = 600 ps.
RDYN
2) Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5
Final Data Sheet
5
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ESD311-U1-02N
Typical Characteristics Diagrams
4
Typical Characteristics Diagrams
Typical characteristics diagrams at TA = 25°C, unless otherwise specified
-3
10
10-4
10-5
-6
10
-7
IR [A]
10
-8
10
-9
10
10-10
10-11
-12
10
0
2
4
6
8
VR [V]
10
12
14
16
Figure 4-1 Reverse leakage current: IR = f(VR)
220
200
180
CL [pF]
160
140
120
100
80
60
0
1
2
3
4
5
6
7
8
VR [V]
9
10 11 12 13 14 15
Figure 4-2 Line capacitance: CL = f(VR)
Final Data Sheet
6
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ESD311-U1-02N
Typical Characteristics Diagrams
75
Scope: 6 GHz, 20 GS/s
VCL [V]
50
VCL-max-peak = 42 V
25
VCL-30ns-peak = 20 V
0
-25
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 4-3 Clamping voltage (ESD): VCL = f(t), 8 kV positive pulse from pin 1 to pin 2
25
Scope: 6 GHz, 20 GS/s
VCL [V]
0
-25
VCL-max-peak = -31 V
-50
-75
-50
VCL-30ns-peak = -1 V
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 4-4 Clamping voltage (ESD) VCL = f(t), 8 kV negative pulse from pin 1 to pin 2
Final Data Sheet
7
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ESD311-U1-02N
Typical Characteristics Diagrams
75
Scope: 6 GHz, 20 GS/s
VCL [V]
50
VCL-max-peak = 20 V
VCL-30ns-peak = -20 V
25
0
-25
-50
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 4-5 Clamping voltage (ESD) VCL = f(t), 15 kV positive pulse from pin 1 to pin 2
25
Scope: 6 GHz, 20 GS/s
VCL [V]
0
-25
VCL-max-peak = -52 V
-50
-75
-50
VCL-30ns-peak = -1 V
0
50
100
150
200
tp [ns]
250
300
350
400
450
Figure 4-6 Clamping voltage (ESD) VCL = f(t), 15 kV negative pulse from pin 1 to pin 2
Final Data Sheet
8
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ESD311-U1-02N
Typical Characteristics Diagrams
40
60
30
RDYN = 0.07 Ω
ITLP [A]
40
20
20
10
0
0
-20
-40
-10
-20
RDYN = 0.05 Ω
-60
-30
-80
-40
-30 -25 -20 -15 -10
Equivalent VIEC [kV]
80
ESD311-U1-02N
RDYN
-5
0
5
10
15
20
25
30
VTLP [V]
Figure 4-7 Clamping voltage (TLP): ITLP = f(VTLP)[1], pin 1 to pin 2
Final Data Sheet
9
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ESD311-U1-02N
Typical Characteristics Diagrams
40
30
20
10
IPP [A]
0
-10
-20
-30
-40
-50
-60
-15
-10
-5
0
5
10
VCL [V]
15
20
25
30
35
Figure 4-8 Pulse current (Surge): IPP = f(VCL)[1], pin 1 to pin 2
Final Data Sheet
10
Revision 1.0, 2014-05-28
ESD311-U1-02N
5.1
TSNP-2-2
Top view
Bottom view
0.7 ±0.05
0.1 A
0.95
1.6 ±0.05
A
0.02 MAX.
0.35 ±0.05
0.4 MAX.
0.8 ±0.05
B
0.1 B
Package Information
0.75 ±0.05
5
0.1 B
Package Information
0.15 x 45°
Pin 1 marking
TSNP-2-2-PO V01
Figure 5-1 TSNP-2-2: Package outline
0.7
0.4
0.35
0.75
0.75
0.4
0.35
0.7
0.7
0.7
Copper
Stencil apertures
Solder mask
TSNP-2-2-FP V01
Figure 5-2 TSNP-2-2: Footprint
4
8
1.75
Pin 1
marking
0.5
0.95
TSNP-2-2-TP V01
Figure 5-3 TSNP-2-2: Packing
Type code
1
Pin 1 marking
Date code (M)
TSNP-2-2-MK V01
Figure 5-4 TSNP-2-2: Marking example, Type code see: Table 1-1 “Part Information” on Page 3
Final Data Sheet
11
Revision 1.0, 2014-05-28
ESD311-U1-02N
Revision History: Rev. 0.9.1, 2014-05-20
Page or Item
Subjects (major changes since previous revision)
Revision 1.0, 2014-05-28
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Status change to final
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™,
MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
Final Data Sheet
2
Revision 1.0, 2014-05-28
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Published by Infineon Technologies AG
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