Single N-channel MOSFET ELM32400LA-S ■General description ■Features ELM32400LA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. • • • • Vds=60V Id=22A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Ta=70°C Continuous drain current 60 ±20 22 18 80 Id Pulsed drain current Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg V V A A 50 3 W 32 -55 to 150 °C ■Thermal characteristics Parameter Maximum junction-to-case Maximum junction-to-ambient Steady-state Steady-state Symbol Rθjc Rθja ■Pin configuration Typ. Max. 2.5 55.0 Unit °C/W °C/W Note ■Circuit D TO-252-3(TOP VIEW) TAB 2 1 Pin No. 1 Pin name GATE 2 3 DRAIN SOURCE 3 4-1 G S Single N-channel MOSFET ELM32400LA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Igss Vds=40V, Vgs=0V, Ta=55°C 10 Vds=0V, Vgs=±20V nA 2.5 V A 1 mΩ 1 1 S V 1 1 Is 22 A Ism 2.6 A Rds(on) Output capacitance Reverse transfer capacitance SWITCHING PARAMETERS Total gate charge Gfs Vsd Coss Crss Gate-source charge Gate-drain charge Turn-on delay time Qgd td(on) Turn-on rise time Turn-off delay time tr 1.0 22 1.5 Vgs=10V, Id=10A 42 55 Vgs=4.5V, Id=8A 59 75 Vds=10V, Id=10A If=1A, Vgs=0V 14 Ciss Qg Qgs Turn-off fall time μA ±250 Static drain-source on-resistance Pulsed body-diode current DYNAMIC PARAMETERS Input capacitance V 1 Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=10V, Vds=5V Max. body-diode continuous current 60 Vds=48V, Vgs=0V Gate threshold voltage On state drain current Forward transconductance Diode forward voltage Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Note Vgs=0V, Vds=25V, f=1MHz Vgs=10V, Vds=30V Id=10A Vgs=10V, Vds=30V, Id=1A td(off) Rgen=6Ω tf NOTE : 1. Pulse test : Pulsed width ≤ 300μsec and Duty cycle ≤ 2%. 2. Independent of operating temperature. 3. Pulsed width limited by maximum junction temperature. 4-2 3 587 pF 80 46 pF pF 12.5 1.8 nC nC 2 2 3.7 nC ns 2 2 ns 2 19 ns 2 6 ns 2 11 8 Single N-channel MOSFET ELM32400LA-S ■Typical electrical and thermal characteristics 4-3 Single N-channel MOSFET ELM32400LA-S � �� �� � � � � � � � � 4-4