elm34v555a

Single P-channel MOSFET
ELM34V555A-N
■General description
■Features
ELM34V555A-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-6A
Rds(on) < 28mΩ (Vgs=-10V)
Rds(on) < 45mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Tc=70°C
Power dissipation
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
-30
V
Junction and storage temperature range
Vgs
±20
V
Id
-6.0
-4.7
A
Idm
Ias
Eas
-24
-19.3
18.6
A
A
mJ
Pd
Tj, Tstg
1.7
1.1
-55 to 150
3
W
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
72
Unit
°C/W
Note
4
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
1
2
Pin name
SOURCE
SOURCE
3
4
SOURCE
GATE
5
6
DRAIN
DRAIN
7
8
DRAIN
DRAIN
4-1
D
G
S
Single P-channel MOSFET
ELM34V555A-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
Vds=-20V, Vgs=0V, Ta=55°C
-10
Vds=0V, Vgs=±20V
Vgs(th) Vds=Vgs, Id=-250μA
Vgs=-10V, Id=-6A
Rds(on)
Vgs=-4.5V, Id=-6A
Vds=-5V, Id=-6A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
If=-6A, Vgs=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
Turn-on rise time
Turn-off delay time
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
V
-1
Gfs
Gate-source charge
Gate-drain charge
Turn-on delay time
-30
Vds=-24V, Vgs=0V
Forward transconductance
Gate resistance
SWITCHING PARAMETERS
Total gate charge
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
-0.8
μA
±100
nA
-1.5
22
-2.5
28
V
32
45
mΩ
1
S
1
V
A
1
22
-1.0
-10
Vgs=0V, Vds=-15V, f=1MHz
846
120
106
pF
pF
pF
Vgs=0V, Vds=0V, f=1MHz
11
Ω
20.0
2.4
4.8
nC
nC
nC
2
2
2
td(on)
tr
Vgs=-10V, Vds=-15V
10.4
7.8
ns
ns
2
2
td(off) Id=-6A, Rgen=6Ω
22.0
ns
2
7.0
ns
2
12.2
3.5
ns
nC
Rg
Qg
Qgs
Qgd
Vgs=-10V, Vds=-15V
Id=-6A
tf
trr
Qrr
If=-6A, dIf/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. The value of Rθja is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with Ta =25°C.
4-2
Single P-channel MOSFET
SOP-8
Halogen-free & Lead-Free
■Typical electrical and thermal characteristics
Output Characteristics
Transfer Characteristics
24
VGS=-10V
VGS=-9V
VGS=-8V
VGS=-7V
VGS=-6V
VGS=-5V
VGS=-4.5V
VGS=-3.5V
18
-ID, Drain-To-Source Current(A)
-ID, Drain-To-Source Current(A)
24
VGS=-3V
12
6
VGS=-2.5V
0
0
1
2
3
4
5
18
12
6
25℃
125℃
0
6
0
-VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
2
3
4
5
Capacitance Characteristic
1000
VDS=-15V
ID=-6A
900
8
C , Capacitance(pF)
-VGS , Gate-To-Source Voltage(V)
1
-20℃
-VGS, Gate-To-Source Voltage(V)
10
6
4
CISS
800
700
600
500
400
300
200
2
COSS
100
0
0
4
8
12
16
0
20
CRSS
0
Qg , Total Gate Charge(nC)
10
15
20
25
30
On-Resistance VS Drain Current
On-Resistance VS Gate-To-Source
0.05
RDS(ON)ON-Resistance(OHM)
0.08
0.06
0.04
ID=-6A
0.02
0
5
-VDS, Drain-To-Source Voltage(V)
0.1
RDS(ON)ON-Resistance(OHM)
PV555BA
P-Channel Logic Level Enhancement Mode
ELM34V555A-N
Field Effect Transistor
NIKO-SEM
2
4
6
8
0.04
VGS=-4.5V
0.03
VGS=-10V
0.02
0.01
0
10
-VGS, Gate-To-Source Voltage(V)
0
3
6
9
12
15
-ID , Drain-To-Source Current(A)
REV 0.9
E-29-3
3
4-3
Single P-channel MOSFET
SOP-8
Halogen-free & Lead-Free
On-Resistance VS Temperature
Source-Drain Diode Forward Voltage
2.0
100
1.8
-IS , Source Current(A)
Normalized Drain to Source
ON-Resistance
PV555BA
P-Channel Logic Level Enhancement Mode
ELM34V555A-N
Field Effect Transistor
NIKO-SEM
1.6
1.4
1.2
1.0
0.8
150℃
25℃
1
VGS=-10V
ID=-6A
0.6
0.4
10
-50
-25
0
25
50
75
100
125
0.1
150
0.0
0.2
0.4
TJ , Junction Temperature(˚C)
0.8
1.0
25
10
100ms
NOTE :
1.VGS= -10V
2.TA=25˚C
3.RθJA = 72˚C/W
4.Single Pulse
0.1
15
Power(W)
1ms
10ms
0.01
Single Pulse
RθJA = 72˚C/W
TA=25˚C
20
1
5
DC
1
10
0
0.001
100
0.01
-VDS, Drain-To-Source Voltage(V)
0.1
1
10
100
Single Pulse Time(s)
Transient Thermal Response Curve
r(t) , Normalized Effective
10
Transient Thermal Resistance
-ID , Drain Current(A)
↓
0.1
1.4
Single Pulse Maximum Power Dissipation
Operation in This Area
is Limited by RDS(ON)
10
1.2
-VSD, Source-To-Drain Voltage(V)
Safe Operating Area
100
0.6
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
Notes
0.1
1.Duty cycle, D= t1 / t2
2.RthJA = 72 ℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
T1 , Square Wave Pulse Duration[sec]
REV 0.9
E-29-3
4
4-4
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