elm34537ba

Single P-channel MOSFET
ELM34537BA-N
■General description
■Features
ELM34537BA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-11A
Rds(on) < 9mΩ (Vgs=-10V)
Rds(on) < 14mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
http://www.elm-tech.com
Ta=25°C. Unless otherwise noted.
Limit
Unit
Note
Symbol
Drain-source voltage
Vds
-30
V
Gate-source voltage
Vgs
±25
V
Ta=25°C
Continuous drain current
Ta=70°C
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Tc=25°C
Power dissipation
Tc=70°C
Junction and storage temperature range
-11.0
Id
A
Idm
-8.7
-50
Ias
-35
A
Eas
61
1.8
mJ
Pd
Tj, Tstg
A
3
W
1.2
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
Maximum junction-to-case
Rθjc
■Pin configuration
Typ.
Max.
68
Unit
Note
4
°C/W
25
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
SOURCE
SOURCE
3
4
5
SOURCE
GATE
DRAIN
6
7
8
DRAIN
DRAIN
DRAIN
D
G
S
Rev.1.0
4-1
Single P-channel MOSFET
ELM34537BA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
BVdss Id=-250μA, Vgs=0V
Zero gate voltage drain current
Idss
Gate-body leakage current
Igss
Gate threshold voltage
Static drain-source on-resistance
Condition
-10
Vds=0V, Vgs=±25V
Vds=-10V, Id=-11A
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Vsd
Is
If=-11A, Vgs=0V
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
Total gate charge (Vgs=-4.5V)
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgd
td(on)
Turn-on rise time
Turn-off delay time
tr
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Vgs=0V, Vds=0V, f=1MHz
Vds=-15V, Id=-11A
Vgs=-10V, Vds=-15V
td(off) Id=-11A, Rgen=6Ω
tf
trr
Qrr
V
Vds=-20V, Vgs=0V, Ta=55°C
Gfs
Qg
Qg
Qgs
-30
-1
Vgs(th) Vds=Vgs, Id=-250μA
Vgs=-10V, Id=-11A
Rds(on)
Vgs=-4.5V, Id=-11A
Rg
Ta=25°C. Unless otherwise noted.
Min. Typ. Max. Unit Note
Vds=-24V, Vgs=0V
Forward transconductance
Gate resistance
SWITCHING PARAMETERS
Total gate charge (Vgs=-10V)
http://www.elm-tech.com
If=-11A, dIf/dt=100A/μs
-1.0
μA
±100
nA
-1.6
7.2
-3.0
9.0
V
10.4
14.0
mΩ
1
S
1
V
A
1
40
-1.3
-11
2664
374
271
pF
pF
pF
3.7
Ω
56
28
9
nC
nC
nC
2
2
2
13
22
nC
ns
2
2
26
ns
2
102
ns
2
75
26
ns
ns
2
14
μC
NOTE :
1. Pulsed test : Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. The value of Rθja is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air
environment with Ta =25°C.
Rev.1.0
4-2
Single P-channel MOSFET
ELM34537BA-N
PV537BA
P-Channel Logic
Level Enhancement Mode
http://www.elm-tech.com
SOP-8
Field Effect Transistor
NIKO-SEM
■Typical electrical and thermal characteristics
Output Characteristics
VGS=�10V
VGS=�9V
VGS=�8V
VGS=�7V
VGS=�6V
VGS=�5V
VGS=�4.5V
VGS=�3.5V
VGS=�3V
24
18
12
VGS=-2.5V
6
0
0
1
2
3
Transfer Characteristics
30
-ID, Drain-To-Source Current(A)
-ID, Drain-To-Source Current(A)
30
Halogen-free & Lead-Free
4
24
18
12
25��
6
125�
�20��
0
5
0
-VDS, Drain-To-Source Voltage(V)
Gate charge Characteristics
3
4
5
Capacitance Characteristic
3000
VDS=-15V
ID=-11A
8
2500
C , Capacitance(pF)
-VGS , Gate-To-Source Voltage(V)
2
-VGS, Gate-To-Source Voltage(V)
10
6
4
2
CISS
2000
1500
1000
COSS
500
CRSS
0
0
10
20
30
40
50
0
60
0
Qg , Total Gate Charge(nC)
On-Resistance VS Gate-To-Source
RDS(ON)ON-Resistance(OHM)
0.02
0.015
0.01
0
ID=-11A
2
4
6
8
10
15
20
25
On-Resistance VS Drain Current
0.02
0.025
0.005
5
-VDS, Drain-To-Source Voltage(V)
0.03
RDS(ON)ON-Resistance(OHM)
1
0.015
VGS=-4.5V
0.01
VGS=-10V
0.005
0
10
-VGS, Gate-To-Source Voltage(V)
0
5
10
15
20
25
30
-ID , Drain-To-Source Current(A)
REV 1.0
F-34-4
3
Rev.1.0
4-3
Single P-channel MOSFET
PV537BA
P-Channel Logic
Level Enhancement Mode
ELM34537BA-N
SOP-8
http://www.elm-tech.com
Field Effect Transistor
NIKO-SEM
Halogen-free & Lead-Free
On-Resistance VS Temperature
Source-Drain Diode Forward Voltage
100
1.6
-IS , Source Current(A)
Normalized Drain to Source
ON-Resistance
1.8
1.4
1.2
1.0
1
VGS=-10V
ID=-11A
0.8
0.6
-50
-25
0
25
50
75
100
125
0.1
150
0.0
0.2
Safe Operating Area
100
0.4
0.6
0.8
80
Single Pulse
R�JA = 68C/W
TC=25C
Power(W)
10
1ms
Operation in This Area
is Limited by RDS(ON)
1.2
Single Pulse Maximum Power Dissipation
64
1
1.0
-VSD, Source-To-Drain Voltage(V)
TJ , Junction Temperature(C)
-ID , Drain Current(A)
25�
150�
10
10ms
48
32
100ms
0.1
0.01
NOTE :
1.VGS= -10V
2.TA=25C
3.R�JA = 68C/W
4.Single Pulse
0.1
16
DC
1
10
0
0.001
100
0.01
-VDS, Drain-To-Source Voltage(V)
0.1
1
10
100
Single Pulse Time(s)
Transient Thermal Response Curve
Transient Thermal Resistance
r(t) , Normalized Effective
10
1
Duty cycle=0.5
Notes
0.2
0.1
0.1
0.05
1.Duty cycle, D= t1 / t2
2.RthJA = 68 �/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
0.02
0.01
0.01
0.0001
single pulse
0.001
0.01
0.1
1
10
100
T1 , Square Wave Pulse Duration[sec]
REV 1.0
F-34-4
4
Rev.1.0
4-4
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