MTN007N03LS3

Spec. No. : C867S3
Issued Date : 2012.10.12
Revised Date : 2013.09.09
Page No. : 1/9
CYStech Electronics Corp.
30V N-Channel Enhancement Mode MOSFET
MTN007N03LS3
Features
• Simple drive requirement
• Small package outline
• Pb-free lead plating and halogen-free package
Symbol
BVDSS
ID
RDSON@VGS=4.5V, ID=400mA
RDSON@VGS=2.5V,ID=250mA
RDSON@VGS=1.8V,ID=150mA
30V
780mA
310mΩ(typ)
440mΩ(typ)
580mΩ(typ)
Outline
MTN007N03LS3
SOT-323
D
G：Gate
S：Source
D：Drain
G
S
Ordering Information
Device
MTN007N03LS3-0-T1-G
MTN007N03LS3
Package
SOT-323
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
CYStek Product Specification
Spec. No. : C867S3
Issued Date : 2012.10.12
Revised Date : 2013.09.09
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C (Note 3)
Continuous Drain Current @ TA=70°C (Note 3)
Pulsed Drain Current (Notes 1, 2)
Maximum Power Dissipation@ TA=25℃
Linear Derating Factor
Limits
30
±8
780
620
3.5
0.35
ID
IDM
PD
ESD susceptibility
Operating Junction and Storage Temperature
Tj, Tstg
Unit
V
mA
A
W
0.003
1000 (Note 4)
-55~+150
W/°C
V
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10 seconds.
4. Human body model, 1.5kΩ in series with 100pF.
Thermal Performance
Parameter
Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note)
Symbol
Limit
Unit
Rth,ja
360
°C/W
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤10 seconds.
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
IGSS
IDSS
*RDS(ON)
*GFS
Dynamic
Ciss
Coss
Crss
MTN007N03LS3
Min.
Typ.
Max.
Unit
30
0.5
-
0.02
0.75
310
440
580
1.2
1.0
±5
1
10
400
600
750
-
V
V/°C
V
-
58
10
6
-
Test Conditions
S
VGS=0, ID=250μA
Reference to 25°C, ID=250μA
VDS=VGS, ID=250μA
VGS=±8V, VDS=0
VDS=30V, VGS=0
VDS=24V, VGS=0 (Tj=70°C)
VGS=4.5V, ID=400mA
VGS=2.5V, ID=250mA
VGS=1.8V, ID=150mA
VDS=5V, ID=400mA
pF
VDS=15V, VGS=0, f=1MHz
μA
mΩ
CYStek Product Specification
CYStech Electronics Corp.
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
Source-Drain Diode
*VSD
-
6
7
14
4
1.4
0.2
0.5
-
-
0.74
1.2
Spec. No. : C867S3
Issued Date : 2012.10.12
Revised Date : 2013.09.09
Page No. : 3/9
ns
VDS=15V, ID=400mA, VGS=4.5V,
RG=6Ω
nC
VDS=24V, ID=780mA, VGS=4.5V
V
VGS=0V, IS=100mA
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTN007N03LS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C867S3
Issued Date : 2012.10.12
Revised Date : 2013.09.09
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
3.5
5V
4.5V
4V
VGS=3.5V
2.5
VGS=3V
2.0
VGS=2.5V
1.5
1.0
ID=250μA,
VGS=0V
BVDSS, Normalized Drain-Source
Breakdown Voltage
ID, Drain Current (A)
3.0
VGS=2V
1.2
1
0.8
0.5
VGS=1.5V
0.0
0
1
2
3
VDS, Drain-Source Voltage(V)
4
0.6
-75 -50 -25
5
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1600
1
Tj=25°C
1200
VSD, Source-Drain Voltage(V)
RDS(on), Static Drain-Source On-State
Resistance(mΩ)
1400
VGS=1.8V
VGS=2.5V
1000
800
600
400
200
VGS=0V
0.8
0.6
Tj=150°C
0.4
0.2
VGS=4.5V
0
0
0.1
0.2
0.3
0.4
0.5 0.6
0.7
ID, Drain Current(A)
0.8
0.9
0
1
0.2
0.4
0.6
0.8
IDR, Reverse Drain Current (A)
1
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
2
900
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=400mA
800
700
600
500
400
300
200
100
1.8
VGS=4.5V, ID=400mA
1.6
1.4
1.2
1
0.8
0.6
0.4
0
0
MTN007N03LS3
1
2
3
4
VGS, Gate-Source Voltage(V)
5
-60
-20
20
60
100
140
Tj, Junction Temperature(°C)
180
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C867S3
Issued Date : 2012.10.12
Revised Date : 2013.09.09
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance---(pF)
100
VGS(th) , Normalized Threshold Voltage
Capacitance vs Drain-to-Source Voltage
Ciss
C oss
10
Crss
1.6
ID=250μA
1.4
1.2
1
0.8
0.6
0.4
1
0.1
1
10
VDS, Drain-Source Voltage(V)
-60 -40 -20
100
0
20 40
60 80 100 120 140 160
Tj, Junction Temperature(°C)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Gate Charge Characteristics
10
20
VDS=24V
Power (W)
15
VGS, Gate-Source Voltage(V)
TJ(MAX) =150°C
TA=25°C
RθJA=360°C/W
10
5
0
0.001
8
VDS=15V
6
4
2
ID=780mA
0
0.01
0.1
1
Pulse Width(s)
10
0
100
Maximum Safe Operating Area
0.5
1
1.5
2
Qg, Total Gate Charge(nC)
2.5
3
Maximum Drain Current vs JunctionTemperature
10
1
1ms
10ms
0.1
TA=25°C, Tj=150°C,
VGS=4.5V, RθJA=360°C/W
Single Pulse
100ms
DC
0.01
0.01
MTN007N03LS3
0.1
1
10
VDS, Drain-Source Voltage(V)
ID, Maximum Drain Current(A)
0.9
100μs
ID, Drain Current (A)
VDS=10V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
TA=25°C, VGS=4.5V, RθJA=360°C/W
0.1
0
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C867S3
Issued Date : 2012.10.12
Revised Date : 2013.09.09
Page No. : 6/9
Typical Characteristics(Cont.)
Power Derating Curve
Typical Transfer Characteristics
0.4
3.5
VDS=5V
PD, Power Dissipation(W)
ID, Drain Current (A)
3
2.5
2
1.5
1
Mounted on FR-4 board
with 1 in² pad area
0.3
0.2
0.1
0.5
0
0
0
1
2
3
4
VGS , Gate-Source Voltage(V)
0
5
20
40
60
80 100 120
TA, Ambient Temperature(℃)
140
160
Transient Thermal Response Curves
1
Normalized Transient Thermal Resistance
D=0.5
0.2
0.1
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*ZθJA(t)
4.RθJA=360 °C/W
0.05
0.02
0.01
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
Forward Transfer Admittance vs Drain Current
GFS, Forward Transfer Admittance(S)
10
1
0.1
VDS =5V
Ta=25°C
Pulsed
0.01
0.001
MTN007N03LS3
0.01
0.1
ID, Drain Current(A)
1
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C867S3
Issued Date : 2012.10.12
Revised Date : 2013.09.09
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTN007N03LS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C867S3
Issued Date : 2012.10.12
Revised Date : 2013.09.09
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTN007N03LS3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C867S3
Issued Date : 2012.10.12
Revised Date : 2013.09.09
Page No. : 9/9
SOT-323 Dimension
TE
CH
□□
Marking:
Date
Code
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
Style: Pin 1.Gate 2.Source 3.Drain
Millimeters
Min.
Max.
0.900
1.100
0.000
0.100
0.900
1.000
0.200
0.400
0.080
0.150
2.000
2.200
1.150
1.350
DIM
A
A1
A2
b
c
D
E
Inches
Min.
Max.
0.035
0.043
0.000
0.004
0.035
0.039
0.008
0.016
0.003
0.006
0.079
0.087
0.045
0.053
DIM
E1
e
e1
L
L1
θ
Millimeters
Min.
Max.
2.150
2.450
0.650 TYP
1.200
1.400
0.525 REF
0.260
0.460
0°
8°
Inches
Min.
Max.
0.085
0.096
0.026 TYP
0.047
0.055
0.021 REF
0.010
0.018
0°
8°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTN007N03LS3
CYStek Product Specification