BAT54V(SOT 563)

WILLAS
FM120-M+
BAT54V THRU
FM1200-M+
SOT-563 Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
profile surface
mounted application in order to
• Low
SCHOTTKY
BARRIER
DIODE
SOT-563
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
FEATURES
• Guardring for overvoltage protection.
high-speed
switching.
• Ultraschottky
Surface mount
barrier
diode arrays
Silicon
epitaxial
planar
chip,
metal silicon junction.
•
Pb-Free package is available
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
RoHS product
for packing/228
code suffix ”G”
MIL-STD-19500
6
5
4
1
2
3
productfor
for packing
code
suffixsuffix
"G" “H”
• RoHS
Halogen free
product
packing
code
Halogen free product for packing code suffix "H"
Moisture Sensitivity Level 1
Mechanical data
Method 2026
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Symbol
Limit
Unit
30
V
IO
200
mA
PD
150
mW
mi
VRRM
Peak Repetitive Peak Reverse Voltage
V
RWM
MAXIMUM
RATINGS AND ELECTRICAL CHARACTERISTICS
Working Peak Reverse
Voltage
VR
DC Ratings
Blocking
V oltage
at 25℃
ambient temperature unless otherwise specified.
Single Rectified
phase half Output
wave, 60Hz,
resistive of inductive load.
Average
Current
For capacitive load, derate current by 20%
Pr
eli
RATINGS
0.031(0.8) Typ.
na
Maximum Ratings @Ta=25℃
• Polarity : Indicated by cathode band
• Mounting Position : Any
Parameter
• Weight : Approximated 0.011 gram
Power
Dissipation
0.040(1.0)
0.024(0.6)
ry
• Epoxy : UL94-V0 rated flame retardant
Marking: KAV
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
30
14
40
15
50
667
16
VRRM
12
20
RθJA13
Maximum Recurrent Peak Reverse Voltage
60
18
80
10
100
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
VDC
20
TSTG30
40
50
80
100
MarkingResistance
Code
Thermal
Junction to Ambient
Junction Temperature
Maximum DC Blocking
Voltage
2SHUDWLQJStorage
Temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
125
60
-65-125
IO
Maximum Average Forward Rectified Current
TJ
IFSM
Symbol
TSTG
Parameter
Storage Temperature
Range
Reverse breakdown voltage
CHARACTERISTICS
Maximumvoltage
Forward Voltage
DC
Reverse
leakagate1.0A
current
IR= 100μA
VFIR
VR=25V
@T A=125℃
Forward
NOTES: voltage
IR
VF
2- Thermal Resistance From Junction to Ambient
Reverse recovery time
2012-06
2012-11
140
℃ 150
200
-55 to +150
- 65 to +175 Max
Min
30
0.50
Unit
V
0.70
CT
t rr
20.85
0.5
IF=1mA
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Total capacitance
105
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
Test conditions
V(BR)
120
200
40
120
-55 to +125
TJ
150
1.0
30
Typical Thermal Resistance (Note 2)
RΘJA
ELECTRICAL
(Ta=25℃CJunless otherwise
specified)
Typical JunctionCHARACTERISTICS
Capacitance (Note 1)
Operating Temperature Range
℃/W
115
10
IF=30mA
500
IF=100mA
1000
RL=100Ω
0.92
400
10
IF=10mA, IR=10mA~1mA
0.9
320
IF=10mA
VR=1V,f=1MHz
uA
5
mV
pF
ns
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT54V THRU
FM1200-M+
SOT-563
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
Outline Drawing
SOT-563
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
.024(0.60)
.020(0.50)
.067(1.70)
.059(1.50)
.012(0.30)
.004(0.10)
Mechanical data
0.040(1.0)
0.024(0.6)
ry
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.031(0.8) Typ.
.067(1.70)
.059(1.50)
na
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Pr
eli
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
CJ
Operating Temperature Range
TJ
.024(0.60)
.020(0.50)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
12
20
13
30
14
21
14
40
.011(0.27)
20
30
.007(0.17)
15
50
CHARACTERISTICS
16
60
18
80
10
100
115
150
120
200
28
35
42
56
70
105
140
40
50
60
80
100
150
200
.007(0.16)
1.0
.003(0.08)
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
mi
.043(1.10)
.051(1.30)
Method 2026
0.012(0.3) Typ.
@T A=125℃
0.50
0.70
0.85
0.9
0.92
0.5
IR
10
NOTES:
.067(1.70)
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
.059(1.50)
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2012-11
Rev.A COR
WILLAS ELECTRONIC
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BAT54V THRU
FM1200-M+
SOT-563
Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
• High current capability,
(1) low
(2) forward voltage drop.
BAT54V ‐T
Tape&Reel: 3 Kpcs/Reel capability. G ‐WS • High surge
Guardring
for
overvoltage
protection.
•
Note: (1) Packing code, Tape & Reel Packing • Ultra high-speed switching.
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” epitaxial planar chip, metal silicon junction.
• Silicon
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
• Polarity : Indicated
by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
ry
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.031(0.8) Typ.
na
0.012(0.3) Typ.
Dimensions in inches and (millimeters)
***Disclaimer*** Pr
eli
mi
WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
changes. WILLAS or anyone on its behalf assumes no responsibility or liability Single phase
half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximumwhich may be included on WILLAS data sheets and/ or specifications can Recurrent Peak Reverse Voltage
Vo
VRRM
Vo
14
21
28
35
42
56
70
105
140
Maximumand do vary in different applications and actual performance may vary over time. RMS Voltage
VRMS
Vo
Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Am
Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
Am
on rated load (JEDEC method)
superimposed
℃
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, P
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
-55 to +150
Operatinglife‐saving implant or other applications intended for life‐sustaining or other related Temperature Range
TJ
℃
- 65 to +175
Storage Temperature Range
TSTG
℃
applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN
Vo
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
mA
10
@T A=125℃
Rated DCsuch applications do so at their own risk and shall agree to fully indemnify WILLAS Blocking Voltage
NOTES: Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-11
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
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