BCW70(69)LT1(SOT 23)

WILLAS
FM120-M+
BCW69LT1
THRU
BCW70LT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
reverse leakage current and thermal resistance.
PNPbetter
Silicon
SOD-123H
• Low profile surface mounted application in order to
Featrues
optimize board space.
We declare
that the
material
of product
loss,
high efficiency.
• Low power
compliance
with RoHS
requirements.
capability,
low forward voltage drop.
• High current
Pb-Free
package
is available
surge capability.
• High
1
overvoltage
protection.
• Guardring
RoHS
product for for
packing
code suffix
”G”
BASE
• Ultra
Halogen
freehigh-speed
product for switching.
packing code suffix “H”
Moisture
Sensitivity
Level
1 chip, metal silicon junction.
epitaxial
planar
• Silicon
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen
free product for packing code suffix "H"
MAXIMUM
RATINGS
Mechanical data
Rating
Symbol
0.146(3.7)
0.130(3.3)
3
COLLECTOR
Value
0.071(1.8)
0.056(1.4)
2
EMITTER
Unit
• Epoxy : UL94-V0 rated flame retardant
Collector–Emitter Voltage
V CEO
– 45
Vdc
• Case : Molded plastic, SOD-123H
– 5.0
Vdc,
Emitter–Base
EBO
• TerminalsVoltage
:Plated terminals,Vsolderable
per
MIL-STD-750
2026
Collector CurrentMethod
— Continuous
IC
– 100
• Polarity : Indicated by cathode band
Mounting
Position : Any
•
THERMAL
CHARACTERISTICS
• Weight : Approximated 0.011 gram
Characteristic
0.040(1.0)
0.024(0.6)
SOT–23
0.031(0.8) Typ.
0.031(0.8) Typ.
mAdc
Dimensions in inches and (millimeters)
Symbol
Max
Unit
Total Device
Dissipation FR–
5 Board, (1)
MAXIMUM
RATINGS
AND ELECTRICAL
CHARACTERISTICS
PD
225
mW
TA = 25°C
Ratings at 25℃ ambient temperature unless otherwise specified.
1.8
mW/°C
Derate above 25°C
Single phase half wave, 60Hz, resistive of inductive load.
Thermal Resistance, Junction to Ambient
RθJA
556
°C/W
For capacitive load, derate current by 20%
Total Device Dissipation
300 FM140-MH
mW
D
FM130-MH
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOLPFM120-MH
RATINGS
Alumina Substrate,
(2) TA = 25°C
2.4
mW/°C
Marking
Code
12
13
14
15
16
18
10
115
120
Derate above 25°C
20
30
40
50
60
80
100
150
200
Maximum
Recurrent
Peak
Reverse
Voltage
V
RRM
Thermal Resistance, Junction to Ambient
RθJA
417
°C/W
14
21
28
35
42
56
70
105
140
Maximum
RMS
Voltage
V
RMS
Junction and Storage Temperature
TJ , Tstg
–55 to +150
°C
Maximum DC Blocking Voltage
0.012(0.3) Typ.
Maximum
Average
Forward Rectified Current
DEVICE
MARKING
Peak Forward
Surge Current
ms single half
sine-wave
BCW69LT1
= H1; 8.3
BCW70LT1
= H2
superimposed on rated load (JEDEC method)
VDC
20
30
40
50
ELECTRICAL CHARACTERISTICS (TA = 25°CRunless
otherwise noted.)
ΘJA
Typical Junction Capacitance
(Note 1)
Characteristic
CJ
OFF CHARACTERISTICS
TSTG
Storage Temperature Range
TJ
Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 )
80
100
150
200
1.0
30
IFSM
Typical Thermal Resistance (Note 2)
Operating Temperature Range
60
IO
Symbol
-55 to +125
Min
40
120
Max
Unit
-55 to +150
- 65 to +175
V (BR)CEO
– 45
—
Vdc
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
CHARACTERISTICS
Collector–Emitter
Breakdown Voltage (IC = –100SYMBOL
µAdc, VFM120-MH
V (BR)CES
– 50
—
Vdc
EB = 0 )
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0)
IR
Cutoff
Current
@T A=125℃
Rated Collector
DC Blocking
Voltage
Maximum Average Reverse Current at @T A=25℃
– 5.0
I CEO
—
0.5
Vdc
(VCE = –20 Vdc, I E = 0 )
—
10
– 100
nAdc
(V
—
– 10
µAdc
NOTES:
= –20 Vdc, I = 0 , T = 100°C)
CE
1- Measured
at 1 MHZ andEapplied Areverse voltage of 4.0 VDC.
V (BR)EBO
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2- Thermal Resistance From Junction to Ambient
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCW69LT1
THRU
BCW70LT1
General
Purpose
Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize CHARACTERISTICS
board space.
ELECTRICAL
(TA = 25°C unless otherwise noted) (Continued)
loss, high efficiency.
• Low power
Characteristic
• High current capability, low forward voltage drop.
ON CHARACTERISTICS
• High surge capability.
DC Currentfor
Gain
overvoltage protection.
• Guardring
( IC= –2.0
mAdc, Vswitching.
BCW69LT1
CE = –5.0 Vdc )
high-speed
• Ultra
silicon junction.
• Silicon epitaxial planar chip, metalBCW70LT1
Collector–Emitter
Saturation
Voltage standards of
parts meet
environmental
• Lead-free
•
Symbol
Min
0.146(3.7)
0.130(3.3)
120
215
260
500
—
– 0.3
Vdc
– 0.6
– 0.75
Vdc
Max
Unit
0.012(0.3) Typ.
hFE
—
V CE(sat)
MIL-STD-19500
( IC = – 10 mAdc, /228
IB = –0.5 mAdc )
RoHS
product for
Base–Emitter
Onpacking
Voltage code suffix "G"
Halogen free product for packing code suffix "H"
( IC = – 2.0 mAdc, V CE = – 5.0Vdc )
V
BE(on)
0.071(1.8)
0.056(1.4)
Mechanical data
SMALL–SIGNAL CHARACTERISTICS
UL94-V0 rated flame retardant
• Epoxy
Output: Capacitance
: Molded
plastic,f =
SOD-123H
• Case
V CB = –10Vdc,
1.0 MHz)
( I E= 0
,
Noise Figure
• Terminals
:Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
C obo
—
NF
(V CE = – 5.0 Vdc,
I C = – 0.22026
mAdc, R S = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
Method
BCW69LT1
pF
0.031(0.8) Typ.
—
• Polarity : Indicated by cathode band
Ordering
Information
• Mounting Position : Any
Device
Marking
• Weight
: Approximated 0.011 gram
7.0
0.031(0.8) Typ.
10
dB
Dimensions in inches and (millimeters)
Shipping
3000/Tape&Reel
H1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
BCW70LT1
H2
3000/Tape&Reel
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
1.0
30
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.92
0.5
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCW69LT1
THRU
BCW70LT1
General
Purpose
Transistors
FM1200-M
1.0A
SURFACE MOUNT
SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package
TYPICAL NOISE CHARACTERISTICS
Features
outline
= – 5.0 offers
Vdc, T A = 25°C)
• Batch process design, excellent power(Vdissipation
CE
I n , NOISE CURRENT (pA)
e n , NOISE VOLTAGE (nV)
Mechanical data
1.0
SOD-123H
10.0
BANDWIDTH = 1.0 Hz
0.146(3.7)
R ~
~
0.130(3.3)
7.0
8
better reverse leakage current and thermal resistance.
profile surface mounted application in order to
optimize board space.
BANDWIDTH = 1.0 Hz
• Low power loss, high efficiency.
R S~
~0
7.0
low forward voltage drop.
• High current capability,
IC=10 µA
• High surge capability.
5.0
• Guardring for overvoltage protection.
switching.
• Ultra high-speed 30µA
3.0
• Silicon epitaxial planar
100µAchip, metal silicon junction.
environmental standards of
• Lead-free parts meet
300µA
/228
1.0mA
2.0 MIL-STD-19500
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
•
10Low
5.0
S
2.0
100µA
0.5
30µA
0.3
0.2
10µA
0.040(1.0)
0.024(0.6)
20
50
100
RATINGS
R S , SOURCE RESISTANCE ( Ω )
R S , SOURCE RESISTANCE ( Ω )
0.5 dB
5.0k
12
20
VRRM
Maximum
RMS Voltage
1.0k
14
500
Maximum
DC Blocking Voltage
20
VRMS
2.0dB
VDC
3.0 dB
Maximum
Average Forward Rectified Current
IO
200
5.0 dB
100
Peak Forward
Current
ms70
single
10 Surge20
30 8.350
100half sine-wave
200 300 500
IFSM700
1.0K
I C , COLLECTOR CURRENT (µA)
RΘJA
Typical Thermal Resistance (Note 2)
Figure 3. Narrow Band, 100 Hz
CJ
Typical Junction Capacitance (Note 1)
TJ
Operating Temperature Range
R S , SOURCE RESISTANCE ( Ω )
Storage1.0M
Temperature Range
CHARACTERISTICS
100k
50k
13
30
14
40
10k
5.0k
2.0k
VF
50k
20k
10k
IR
@T A=125℃
Rated DC Blocking Voltage
0.5dB
NOTES: 5.0k
2.0k
1- Measured at 1 MHZ and applied reverse voltage of 4.01.0dB
VDC.
1.0k
2- Thermal Resistance From Junction to Ambient
2.0dB
3.0 dB
5.0 dB
500
200
100
10
150.5 dB 16
50
60
21
28
35
42
50030
40
50
60
1.0k
200
100
10
20
30
50
70 100
1.0
30200
18
80
1.0dB
56
10
100
115
150
120
200
70
105
140
2.080dB
3.0 dB
100
150
200
5.0 dB
300
500 700 1.0K
I C , COLLECTOR CURRENT (µA)
40
120
-55 to +150
Figure 4. Narrow Band, 1.0 kHz
-55 to +125
- 65 to +175
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
100k
Maximum Average Reverse Current at @T A=25℃
BANDWIDTH = 1.0 Hz
10 Hz to 15.7KHz
Maximum Forward Voltage at 1.0A DC
Dimensions in inches and (millimeters)
200k
TSTG
500k
200k
10k
Figure 2. Noise Current
superimposed on rated load (JEDEC method)
5.0k
20k
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH
dB
Maximum
Recurrent Peak Reverse1.0
Voltage
2.0k
2.0k
1.0M
20k
10k
1.0k
0.031(0.8) Typ.
= 1.0 Hz
MAXIMUM RATINGSBANDWIDTH
AND ELECTRICAL
CHARACTERISTICS
500k
Ratings
at 25℃ ambient temperature unless otherwise specified.
200k
Single 100k
phase half wave, 60Hz, resistive of inductive load.
50k
For capacitive
load, derate current by 20%
Marking Code
500
f, FREQUENCY (Hz)
• Polarity : Indicated by cathode band NOISE FIGURE CONTOURS
• Mounting Position : Any
(V CE = – 5.0 Vdc, T A = 25°C)
• Weight : Approximated 0.011 gram
200
0.031(0.8) Typ.
Figure
1.2026
Noise Voltage
Method
500k
0.071(1.8)
0.056(1.4)
300µA
1.0
0.7
0.1
• Epoxy : UL94-V0 rated flame retardant
10
10
20
50 100
200
500 1.0k 2.0k
5.0k 10k
• Case : Molded plastic, SOD-123H
,
f, FREQUENCY (Hz)
• Terminals :Plated terminals, solderable per MIL-STD-750
1.0M
0.012(0.3) Typ.
IC=1.0mA
3.0
20
30
50
70
100
200
300
Noise
0.50 Figure is Defined
0.70as:
0.85
0.5
2
NF = 20 log 10
e n 2 + 4KTRS + I n R S2
4KTR S 10
0.9
0.92
1/ 2
( –––––––––––––––)
e n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I n = Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10 –23 j/°K)
T = Temperature of the Source Resistance (°K)
R s = Source Resistance ( Ω )
500 700 1.0K
I C , COLLECTOR CURRENT (µA)
Figure 5. Wideband
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M
BCW69LT1
THRU
BCW70LT1
General Purpose Transistors
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
TYPICAL
STATIC
CHARACTERISTICS
in order
to
• Low profile surface mounted application
optimize board space.
0.6
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
0.4 Halogen
free product for packing code suffix "H"
Mechanical data
0.05 0.1 0.2
0.5 1.0 2.0
Method 2026
5.0
10
1.2
V, VOLTAGE (VOLTS)
VRRM
12
20
Maximum RMS Voltage
VRMS
14
VDC
20
@ V = 1.0 V
0.4
0.2
Maximum
DC Blocking Voltage
V CE(sat) @ I C /I B = 10
IO
Maximum
0 Average Forward Rectified Current
50
IFSM
, COLLECTOR
CURRENT (mA)
superimposed on ratedI Cload
(JEDEC method)
0.1
0.2
0.5
1.0
200 µA
150 µA
40
100 µA
50µA
20
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
0
0
5.0
10
15
20
25
30
35
40
Figure 7. Collector Characteristics
1.6
0.8
∗ θ VC for V CE(sat)
25°C to 125°C
0
–55°C to 25°C
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
BE(on)
CE
Maximum Recurrent Peak
Reverse
Voltage
V
250 µA
300µA
*APPLIES for I C / I B< h FE / 2
RATINGS AND ELECTRICAL CHARACTERISTICS
V BE(sat) @ I RATINGS
/I B = 10
C
Marking0.6Code
0.071(1.8)
0.056(1.4)
Dimensions in inches
and (millimeters)
V CE , COLLECTOR–EMITTER
VOLTAGE
(VOLTS)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single1.0
phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
0.8
I B= 400 mA
350µA
60
20
1.4
T J=25°C
MAXIMUM
T A = 25°C
PULSE WIDTH =300 µs
DUTY CYCLE<2.0%
80
θ V , TEMPERATURE COEFFICIENTS (mV/°C)
0.002 0.0050.010.02
0.012(0.3) Typ.
100
: UL94-V0 rated flame retardant
•
• Case : Molded plastic, SOD-123H
,
•0 Terminals :Plated terminals, solderable per MIL-STD-750
0.2 Epoxy
• Polarity : Indicated
by CURRENT
cathode band
I B , BASE
(mA)
Figure
6. Collector
Position
: Any Saturation Region
• Mounting
• Weight : Approximated 0.011 gram
0.146(3.7)
0.130(3.3)
I C , COLLECTOR CURRENT (mA)
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
1.0
• High surge capability.
• Guardring for overvoltage protection. T J = 25°C
• Ultra high-speed switching.
0.8
• Silicon epitaxial planar chip, metal silicon junction.
50 mA standards
10 environmental
mA
100 mA of
• Lead-free
I C= parts
1.0 mA meet
2.0
5.0
10
Peak Forward Surge Current 8.3 ms single half sine-wave
Figure
10.
Typical Thermal Resistance
(Note
2) “On”
20
Voltages RΘJA
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
–0.8
13
14
40
15
50
16
60
18
10
25°C
80 to 125°C
100
115
150
120
200
28
35
θ VB for V BE
40
50
42
56
105
140
150
200
30
21
–1.6
30
–2.4
100
0.1
0.2
70
–55°C to 25°C
80
100
60
1.0
5.0 10
0.5
1.0
2.0
20
50
30
I C , COLLECTOR CURRENT (mA)
100
40
Figure 11. Temperature
Coefficients
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
IR
0.50
0.70
0.85
0.9
0.5
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCW69LT1
THRU
BCW70LT1
FM1200-M
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
TYPICAL
DYNAMIC
CHARACTERISTICS
power
dissipation
offers
• Batch process design, excellent
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
500
1000
30
20
10
0.146(3.7)
0.130(3.3)
700
VCC= –3.0 V
0.012(0.3) Typ.
IC /I B= 10
IB1=IB2
T J= 25°C
500
ts
300
0.071(1.8)
0.056(1.4)
200
t, TIME (ns)
t, TIME (ns)
• Low power loss, high efficiency.
V CC= 3.0 V
300 • High current capability, low forward voltage
drop.
IC /I B= 10
200 • High surge capability.
T J= 25°C
• Guardring for overvoltage protection.
100 • Ultra high-speed switching.
70 • Silicon epitaxial planar chip, metal silicon junction.
50 • Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffixt r"G"
Halogen free product for packing code suffix "H"
td @ V BE(off)= 0.5 V
100
70
50
tf
30
Mechanical data
20
0.040(1.0)
0.024(0.6)
7.0
• Epoxy : UL94-V0 rated flame retardant
5.0
: Molded
plastic,
• Case 2.0
1.0
3.0
5.0 7.0 SOD-123H
10
20
30
50 70 100
,
• Terminals :Plated terminals, solderable per MIL-STD-750
10
–1.0
–2.0
–3.0
–5.0 –7.0 –10
0.031(0.8) Typ.
10.0
T J= 25°C
J
7.0
V CE=20 V RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM
300
RATINGS
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
VRMS
14
70
Maximum
50 DC Blocking Voltage
0.5
0.7
1.0
2.0
20
VDC
3.0
5.0 7.0
10
20
30
50
IO
I C , COLLECTOR CURRENT (mA)
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
Figure 12. Current–Gain — Bandwidth
Product
Maximum Average Forward Rectified Current
3.0
2.0
13
30
14
40
15
50
16
60
18
80
C ob
10
100
115
150
120
200
21
28
35
42
56
70
105
140
150
200
1.0
30
0.05
40
0.1
superimposed on rated load (JEDEC method)
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
0.5
Storage Temperature
Range
0.3
CHARACTERISTICS
0.1
0.50 FIGURE 16
IR
@T A=125℃
-55 to +150
t
1.0
2.0
10
20
50
100
0.92
200
READ TIME AT t 1 (SEE AN–569)
Z θJA(t) = r(t) • RθJA
1
t
5.0
0.9
0.70DUTY CYCLE, D 0.85
= t1 / t 2
P(pk)
SINGLE PULSE
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
50
D CURVES
0.5 APPLY FOR POWER
PULSE
10 TRAIN SHOWN
0.01
0.01
2- Thermal
Resistance From Junction to Ambient
0.01
0.02
0.05 0.1 0.2
0.5
20
0.03
NOTES: 0.02
10
- 65 to +175
VF
0.05
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0.02
100
5.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum0.1
Forward Voltage at 1.0A DC
0.07
0.05
80
2.0
40
120
TSTG
0.2
1.0
1.0
V R , REVERSE VOLTAGE
(VOLTS)
30
Figure 13. Capacitance
-55 to +125
TJ
Operating Temperature Range
60
0.5
CJ
0.7
Typical Junction
Capacitance
(Note 1)
D = 0.5
50
0.2
RΘJA
Typical Thermal
Resistance (Note 2)
1.0
0.2
C ib
5.0
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
20
–70
–100
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Ratings at 25℃ ambient temperature
5.0 V unless otherwise specified.
200phase half wave, 60Hz, resistive of inductive load.
Single
For capacitive load, derate current by 20%
–50
Figure 11. Turn–Off Time
• Polarity : Indicated by cathode band
• Mounting Position : Any
500
• Weight
: Approximated 0.011 gram
T = 25°C
100
Marking
Code
–30
I C , COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
C, CAPACITANCE (pF)
f T, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)
I C , COLLECTOR CURRENT (mA)
Method 2026
–20
2
500
T J(pk) – T A = P (pk) Z
1.0k
2.0k
5.0k
10k
θJA(t)
20k
50k
100k
t, TIME (ms)
Figure 14. Thermal Response
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
BCW69LT1
THRU
BCW70LT1
FM1200-M
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
I C , COLLECTOR CURRENT (nA)
104
103
• Low power loss, high efficiency.
V CCcurrent
= 30 V capability, low forward voltage drop.
• High
• High surge capability.
I CEO
protection.
• Guardring for overvoltage
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
I CBO
of
• Lead-free parts meet environmental standards
DESIGN NOTE: USE OF THERMAL
RESPONSE DATA
0.130(3.3)
0.146(3.7)
0.012(0.3) Typ.
A train of periodical power pulses can be represented by the
model
as shown in Figure 16. Using the model and the device
0.071(1.8)
102
thermal response the normalized effective transient thermal0.056(1.4)
resistance
of
Figure
14
was
calculated
for
various
duty
cycles.
101
To find Z θJA(t) , multiply the value obtained from Figure 14 by the
MIL-STD-19500 /228
AND
RoHS
product
for
packing
code
suffix
"G"
steady
state value R θJA .
•
I CEX @ V BE(off) = 3.0 V
100
Halogen free product for packing code suffix "H"
Example:
Mechanical data
Dissipating 2.0 watts peak under the following conditions:
10–1
0.040(1.0)
t 1 = 1.0 ms, t 2 = 5.0 ms. (D = 0.2)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
Using Figure 14 at a pulse width of 1.0 ms and D = 0.2, the reading
10–2 • Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
of r(t)
, is 0.22.
–4• Terminals
–2
0 :Plated
+20
+40
+60
+80
+100 +120
+140 +160
terminals,
solderable
per MIL-STD-750
The peak rise in junction temperature is therefore
2026
T J , Method
JUNCTION
TEMPERATURE (°C)
∆T = r(t) x P (pk) x R θJA = 0.22 x 2.0 x 200 = 88°C.
Dimensions in inches and (millimeters)
• Polarity
: Indicated
cathode band
Figure 15.
Typicalby
Collector
Leakage Current
For more information, see AN–569.
• Mounting Position : Any
• Weight : Approximated 0.011 gram
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
14
40
Maximum RMS Voltage
VRMS
14
21
28
VDC
20
30
40
Maximum DC Blocking Voltage
IO
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
CJ
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
.080(2.04)
.070(1.78)
CHARACTERISTICS
TJ
16
60
18
80
10
100
115
150
120
200
35
42
56
70
105
140
50
60
80
100
150
200
-55 to +125
TSTG
1.0
30
40
120
.008(0.20)
.003(0.08)
- 65 to +175
-55 to +150
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
15
50
.083(2.10)
13
30
.063(1.60)
.047(1.20)
Maximum Recurrent Peak Reverse Voltage
.122(3.10) 12
20
.106(2.70)
VRRM
Marking Code
.110(2.80)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.006(0.15)MIN.
MAXIMUM RATINGS AND ELECTRICAL
SOT-23CHARACTERISTICS
0.50
0.85
0.9
0.5
IR
@T A=125℃
0.70
0.92
10
.004(0.10)MAX.
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.020(0.50)
.012(0.30)
.055(1.40)
.035(0.89)
NOTES:
Dimensions in inches and (millimeters)
2012-06
2012-
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
General Purpose Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
FM120-M+
BCW69LT1
THRU
BCW70LT1
FM1200-M+
Pb Free Produc
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
0.146(3.7)
high efficiency.
• Low power loss,
Device PN Packing 0.130(3.3)
forward voltage drop.
• High current capability, low
(1)
‐WS Tape&Reel: 3 Kpcs/Reel surge capability.
• High Part Number G
Guardring
for
overvoltage
protection.
•
Note: (1) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Ordering Information: 0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** WILLAS reserves the right to make changes without notice to any product MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
specification herein, to make corrections, modifications, enhancements or other Ratings at 25℃ ambient temperature unless otherwise specified.
Singlechanges. WILLAS or anyone on its behalf assumes no responsibility or liability phase half wave, 60Hz, resistive of inductive load.
For
capacitive
load, derate current by 20%
for any errors or inaccuracies. Data sheet specifications and its information SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
contained are intended to provide a product description only. "Typical" parameters Marking Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
which may be included on WILLAS data sheets and/ or specifications can Maximum
Recurrent Peak Reverse Voltage
VRRM
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
and do vary in different applications and actual performance may vary over time. Maximum DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
WILLAS does not assume any liability arising out of the application or Maximum Average Forward Rectified Current
IO
1.0
use of any product or circuit. Peak Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed
on rated load (JEDEC method)
40
Typical Thermal Resistance (Note 2)
RΘJA
WILLAS products are not designed, intended or authorized for use in medical, 120
Typical Junction Capacitance (Note 1)
CJ
-55
to
+125
-55 to +150
life‐saving implant or other applications intended for life‐sustaining or other related Operating
Temperature Range
TJ
- 65 to +175
Storage Temperature Range
TSTG
applications where a failure or malfunction of component or circuitry may directly CHARACTERISTICS
or indirectly cause injury or threaten a life without expressed written approval SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
of WILLAS. Customers using or selling WILLAS components for use in 0.5
Maximum Average Reverse Current at @T A=25℃
IR
such applications do so at their own risk and shall agree to fully indemnify WILLAS 10
@T A=125℃
Rated DC
Blocking Voltage
NOTES:Inc and its subsidiaries harmless against all claims, damages and expenditures. 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
2012-
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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