2SC4672(SOT 89)

WILLAS
FM120-M+
2SC4672 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Package outline
Features
SOT-89
TRANSISTOR
(NPN)design, excellent power dissipation offers
• Batch process
better reverse leakage current and thermal resistance.
SOD-123H
FEATURES
• Low profile surface mounted application in order to
board space.
z Lowoptimize
Saturation
Voltage
• Low power loss, high efficiency.
z Excellent
hFE Characteristics
capability, low forward voltage drop.
• High current
High
surge
capability.
•
z Complements the 2SA1797
• Guardring for overvoltage protection.
z Pb-Free
package is
available
switching.
• Ultra high-speed
0.146(3.7)
0.130(3.3)
1. BASE
0.012(0.3) Typ.
2. COLLECTOR
0.071(1.8)
0.056(1.4)
3. EMITTER
RoHS
product
for packing
code
suffix
"G"junction.
epitaxial
planar chip,
metal
silicon
• Silicon
Halogen
free parts
product
packing code
suffix "H"
meetfor
environmental
standards
of
• Lead-free
MIL-STD-19500 /228
Moisture Sensitivity Level 1
• RoHS product for packing code suffix "G"
z
Pb Free Produc
Halogen free product for packing code suffix "H"
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
• Case : Molded plastic, SOD-123H
,
Symbol
Parameter
• Terminals :Plated terminals,
solderable per MIL-STD-750
VCBO
0.031(0.8) Typ.
Value
Collector-Base
Voltage
Method 2026
: Indicated by cathode
Collector-Emitter
Voltageband
VCEO• Polarity
Position : Any
Emitter-Base
Voltage
VEBO• Mounting
•
Weight
:
Approximated
Collector Current0.011 gram
IC
0.031(0.8) Typ.
Unit
60
V
50
Dimensions
in inches and (millimeters)
V
6
V
2
A
PC
Collector
Power
Dissipation
500
mW
MAXIMUM
RATINGS
AND ELECTRICAL CHARACTERISTICS
Ambient
250
RθJA at 25℃Thermal
℃/W
Ratings
ambient Resistance
temperature From
unlessJunction
otherwiseTo
specified.
Single
wave, 60Hz,
resistive of inductive load.
Junction
Temperature
Tj phase half
For capacitive load, derate current by 20%
Tstg
Storage Temperature
RATINGS
150
℃
-55~+150
℃
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
12
13
14
15
VRMS
14
21
28
35
VDC
20
30
40
50
16
60
otherwise
specified)
ELECTRICAL
CHARACTERISTICS (Ta=25℃ unless
20
30
40
50
Maximum Recurrent Peak Reverse Voltage
VRRM
Maximum RMS Voltage
Parameter
Symbol
Maximum DC Blocking Voltage
Collector-base
voltage
Maximum Average breakdown
Forward Rectified
Current
conditions
42
V(BR)CEO
IC=1mA,IB=0
V(BR)EBO
IE=50µA,IC=0
6
Collector
cut-off
current
Typical Thermal
Resistance
(Note 2)
ICBO
RΘJA
VCB=60V,IE =0
Typical Junction
Capacitance
Emitter
cut-off
current (Note 1)
CJ
IEBO
TJ
VEB=5V,IC
Emitter-base
breakdown
voltage
superimposed on rated
load (JEDEC
method)
Operating Temperature Range
DC current gain
hFE
Storage Temperature Range
TSTG
Collector-emitter saturation voltage
VCE(sat)
CHARACTERISTICS
Transition frequency
VF
Collector output capacitance
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
105
140
150
200
Unit
V
30
V
0.1
µA
0.1
µA
-55 to +150
VCE=2V, IC=500mA
120
200
82
- 65 to +175
IC=1A,IB=50mA
390
0.35
V
FM120-MH
FM130-MH
FM140-MH
FM150-MH FM160-MH FM180-MH
FM1100-MH FM1150-MH
FM1200-MH
SYMBOL
fT
VCE=2V,I
C=0.5A,
f=100MHz
210
MHz
Maximum Forward Voltage at 1.0A DC
CLASSIFICATION OF hFE
-55 to +125
100
115
150
V
40
120
=0
Max
80
60 1.0
50 IFSM
70
Typ
60
IC=50µA,IE=0
Collector-emitter breakdown voltage
10
100
56
Min
V(BR)CBO
IO
Peak Forward Surge Current 8.3 ms single half sine-wave
Test
18
80
Cob
@T A=125℃
IR
0.50
VCB=10V, IE=0, f=1MHz
0.70
0.5
25
0.85
0.9
pF
0.92
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
RANK
P
Q
R
RANGE
82–180
120–270
180–390
MARKING
DKP
DKQ
DKR
2- Thermal Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC4672 THRU
FM1200-M+
SOT-89 Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
Typical Characterisitics
SOD-123+ PACKAGE
Static Characteristic
1.0
Package outlineCOMMON EMITTER
300
Features
COMMON EMITTER
VCE=2V
T =25℃process design, excellent power dissipation offers
• Batch
4.0mA
hFE
optimize board space.
3.2mA
0.6
• Low power loss, high efficiency. 2.8mA
voltage drop.
• High current capability, low forward
2.4mA
• High surge capability.
0.4
2.0mA
• Guardring for overvoltage protection.
1.6mA
• Ultra high-speed switching.
1.2mA
0.2
junction.
• Silicon epitaxial planar chip, metal silicon
0.8mA
standards of
• Lead-free parts meet environmentalI =0.4mA
1
2
for packing
code suffix3"G"
• 0RoHS product
COLLECTOR-EMITTER VOLTAGE
200
Ta=25℃
VCE
0
0.1
4
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any T =100℃
0.2
• Weight : Approximated 0.011 gram
a
Ta=25℃
Ratings at 25℃ ambient temperature unless otherwise specified.
0.0
Single phase
half wave, 60Hz,
resistive of inductive
load. 2
0.1
1
0.3
COLLECTOR
CURRENT
IC (A)
For capacitive load, derate
current
by 20%
0.031(0.8) Typ.
0.031(0.8) Typ.
Ta=25℃
0.8
Dimensions in inches and (millimeters)
Ta=100℃
0.6
0.4
VRRM
Maximum
1 RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
a
Ta=25℃
Peak Forward Surge Current 8.3 ms single half sine-wave
0.3
superimposed
on rated load (JEDEC method)
IO
IFSM
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature
Range
0.4
0.6
COLLECTOR CURRENT
0.8
1.0
1000
13
30
14
40
15
50
21
28
35
30
40
50
100
2
(A)
Cib
42
56
60
80
f=1MHz10
IE=0/IC=0
100
115
150
120
200
70
105
140
100
150
200
Ta=25℃
1.0
30
10
1
0.1
40
120
-55 to +125
TSTG 1.2
18
80
-55 to +150
0.3
1
- 65 to
+175
3
REVERSE VOLTAGE
CHARACTERISTICS
PC —— Ta
Maximum
600 Forward Voltage at 1.0A DC
V
10
20
(V)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Average Reverse Current at @T A=25℃
0.50
0.70
0.85
0.9
0.92
0.5
IR
@T A=125℃
Rated DC Blocking Voltage
IC
16
60
Cob
BASE-EMMITER VOLTAGE VBE (V)
500
1
0.3
C
(A)
IC
COLLECTOR CURRENT
Maximum Average Forward
Rectified Current
T =100℃
0.1
0.2
β=20
(pF)
CE
Maximum Recurrent
Peak Reverse Voltage
12
20
COLLECTOR POWER DISSIPATION
PC (mW)
—— IC
Cob/ Cib ——
VCB/ VFM180-MH
FM160-MH
FM1100-MH FM1150-MH FM1200-MH
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
EB
V =2V
2
(A)
0.040(1.0)
0.024(0.6)
0.2
0.1
CAPACITANCE
IC —— VBE
RATINGS
Marking Code
COMMON EMITTER
IC
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
2
VBEsat
1.2
BASE-EMITTER SATURATION
VOLTAGE VBEsat (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (V)
1
0.3
COLLECTOR CURRENT
β=20
: UL94-V0 rated flame retardant
• Epoxy
Case
:
Molded plastic, SOD-123H
•
0.4
1.0
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.1
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
(V)
IC
CEsat
0.3
0.146(3.7)
0.130(3.3)
100
Halogen free product for packing code suffix "H"
——
MechanicalV data
0.5
SOD-123H
B
MIL-STD-19500 /228
0.0
DC CURRENT GAIN
COLLECTOR CURRENT
Ta=100℃
better reverse leakage current and thermal resistance.
3.6mA
in order to
• Low profile surface mounted application
IC
(A)
a
0.8
Pb Free Produc
—— IC
hFE
10
NOTES:400
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal
300 Resistance From Junction to Ambient
200
100
0
0
2012-06
2012-0
25
50
75
AMBIENT TEMPERATURE
100
Ta
125
(℃ )
150
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC4672 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
Outline Drawing
SOT-89
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500 /228
• RoHS product for packing code suffix "G"
.181(4.60)
Halogen free product for packing code suffix "H"
Mechanical data
.173(4.39)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
.061REF
• Terminals :Plated terminals, solderable
per MIL-STD-750
Method 2026
(1.55)REF
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.063(1.60)
0.031(0.8) Typ.
0.031(0.8) Typ.
.055(1.40)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.102(2.60)
.091(2.30)
FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
SYMBOL FM120-MH FM130-MH FM140-MH
.167(4.25)
RATINGS
.154(3.91)
Marking Code
12
.023(0.58)
20
.016(0.40)
VRRM
Maximum Recurrent Peak Reverse Voltage
13
30
14
40
15
50
16
60
18
80
10
100
115
150
120
200
V
Maximum RMS Voltage
VRMS
14
21
28
35
42
56
70
105
140
V
Maximum DC Blocking Voltage
VDC
20
30
40
50
60
80
100
150
200
V
Maximum Average Forward Rectified Current
Peak Forward
Surge Current 8.3 ms single half sine-wave
.031(0.8)
IO
IFSM
Typical Thermal Resistance (Note 2)
RΘJA
.047(1.2)
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
.060TYP
(1.50)TYP
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
TSTG
40
120
-55 to +125
.197(0.52)
.013(0.32)
A
A
℃
-55 to +150
- 65 to +175
.017(0.44)
.014(0.35)
.118TYP
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
(3.0)TYPVF
0.9
0.92
0.50
0.70
0.85
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
1.0
30
@T A=125℃
0.5
IR
U
V
m
10
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
Rev.C
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
2SC4672 THRU
FM1200-M+
SOT-89
Plastic-Encapsulate Transistors
1.0A SURFACE MOUNT SCHOTTKY
BARRIER RECTIFIERS -20V- 200V
SOD-123+ PACKAGE
Pb Free Product
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board
space.
Ordering
Information:
0.146(3.7)
• Low power loss, high efficiency.
0.130(3.3)
Packing capability, low forward voltage drop.
• High current Device PN (3)
surge capability.
• High
2SC4672 x
–SOT89 (1)G(2)‐WS Tape& Reel: 1 Kpcs/Reel • Guardring for overvoltage protection.
Note: (1)
high-speed switching.
• Ultra CASE:SOT‐89 epitaxial planar chip, metal silicon junction.
• Silicon
(2) RoHS product for packing code suffix ”G”;Halogen free product for packing code suffix “H” • Lead-free parts meet environmental standards of
/228
MIL-STD-19500
(3) CLASSIFICATION OF h
FE RANK • RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
***Disclaimer*** MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
WILLAS reserves the right to make changes without notice to any product Ratings at 25℃
ambient temperature unless otherwise specified.
Single phase
half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
Marking for any errors or inaccuracies. Data sheet specifications and its information Code
12
13
14
15
16
18
10
115
120
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
V
VRRM
contained are intended to provide a product description only. "Typical" parameters V
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
which may be included on WILLAS data sheets and/ or specifications can V
Maximum
DC Blocking Voltage
20
30
40
50
60
80
100
150
200
VDC
A
Maximum
Average Forward Rectified Current
and do vary in different applications and actual performance may vary over time. IO
1.0
WILLAS does not assume any liability arising out of the application or Peak Forward
Surge Current 8.3 ms single half sine-wave
30
IFSM
A
superimposed on rated load (JEDEC method)
use of any product or circuit. ℃
40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical Junction Capacitance (Note 1)
CJ
-55 to +125
TJ
WILLAS products are not designed, intended or authorized for use in medical, Operating Temperature Range
Storage Temperature Range
TSTG
-55 to +150
- 65 to +175
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
applications where a failure or malfunction of component or circuitry may directly V
0.9
Maximum Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
or indirectly cause injury or threaten a life without expressed written approval 0.5
Maximum
Average Reverse Current at @T A=25℃
IR
m
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES: such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2- Thermal
Resistance From Junction to Ambient
2012-06
2012-0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
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