INFINEON PTFA211001E

PTFA211001E
Thermally-Enhanced High Power RF LDMOS FET
100 W, 2110 – 2170 MHz
Description
The PTFA211001E is a thermally-enhanced, 100-watt, internallymatched GOLDMOS ® FET intended for WCDMA applications. It is
characaterized for single- and two-carrier WCDMA operation from
2110 to 2170 MHz. Thermally-enhanced packaging provides the
coolest operation available. Full gold metallization ensures excellent
device lifetime and reliability.
Features
Two-carrier WCDMA Drive-up
-28
36
-31
32
Efficiency
-34
28
IM3 Up
24
-40
20
-43
16
-46
12
ACPR
-49
8
-52
4
-55
0
36
38
40
42
44
Drain Efficiency (%)
IM3 (dBc), ACPR (dBc)
VDD = 28 V, IDQ = 900 mA, ƒ = 2140 MHz, 3GPP WCDMA
signal, 8 dB P/A R, 10 MHz carrier spacing
-37
PTFA211001E
Package H-30248-2
46
Average Output Power (dBm)
•
Thermally-enhanced package, Pb-free and RoHScompliant
•
Broadband internal matching
•
Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 23 W
- Linear Gain = 16 dB
- Efficiency = 28.5%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –41 dBc
•
Typical CW performance, 2170 MHz, 28 V
- Output power at P–1dB = 125 W
- Efficiency = 57%
•
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
•
Excellent thermal stability, low HCI drift
•
Capable of handling 10:1 VSWR @ 28 V,
100 W (CW) output power
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 900 mA, POUT = 23 W average
ƒ1 = 2135 MHz, ƒ2 = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
Gps
15
16
—
dB
Drain Efficiency
ηD
27
28.5
—
%
Intermodulation Distortion
IMD
—
–37
–36
dBc
All published data at TCASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03, 2008-03-04
PTFA211001E
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
VGS = 0 V, IDS = 10 µA
V(BR)DSS
65
—
—
V
Drain Leakage Current
VDS = 28 V, V GS = 0 V
IDSS
—
—
1.0
µA
On-State Resistance
VGS = 10 V, V DS = 0.1 V
RDS(on)
—
0.08
—
Ω
Operating Gate Voltage
VDS = 28 V, IDQ = 900 mA
VGS
2.0
2.5
3.0
V
Gate Leakage Current
VGS = 10 V, V DS = 0 V
IGSS
—
—
1.0
µA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
V
Gate-Source Voltage
VGS
–0.5 to +12
V
Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
417
W
2.38
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C, 100 W CW)
RθJC
0.42
°C/W
Ordering Information
Type and Version
Package Outline
Package Description
Marking
PTFA211001E
H-30248-2
Thermally-enhanced slotted flange, single-ended
PTFA211001E
V1
*See Infineon distributor for future availability.
Data Sheet
2 of 9
Rev. 03, 2008-03-04
PTFA211001E
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Various Biases
Broadband Performance
VDD = 28 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
VDD = 28 V, IDQ = 900 mA, POUT = 44.0 dBm
-5
35
-35
1.0 A
-40
700 mA
-45
900 mA
-50
800 mA
-55
34
36
38
40
42
44
-10
30
Efficiency
-15
25
-20
Return Loss
20
-25
15
Gain
-30
Input Return Loss (dB)
-30
Gain (dB), Efficiency (%)
Adjacent Channel Power Ratio (dBm)
P/AR = 8 dB, 10 MHz carrier spacing, series show IDQ
10
-35
2070 2090 2110 2130 2150 2170 2190 2210
46
Frequency (MHz)
Average Output Power (dBm)
Intermodulation Distortion Products
vs. Tone Spacing
Power Sweep, CW Conditions
VDD = 28 V, IDQ = 900 mA, ƒ = 2170 MHz
VDD = 28 V IDQ = 900 mA, ƒ = 2140 MHz,
POUT = 50 dBm PEP
Gain
40
15
30
14
TCASE = 25°C
TCASE = 90°C
Efficiency
20
13
0
20
40
60
80
100
120
Intermodulation Distortion (dBc)
50
16
Gain (dB)
-15
60
Drain Efficiency (%)
17
10
140
-25
3rd Order
-30
-35
-40
5th
-45
-50
7th
-55
0
5
10
15
20
25
30
Tone Spacing (MHz)
Output Power (W)
Data Sheet
-20
3 of 9
Rev. 03, 2008-03-04
PTFA211001E
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
2-Tone Drive-up
50
-25
45
-30
Efficiency
IM3
40
35
-35
30
-40
IM5
25
-45
20
-50
15
-55
10
IM7
-60
Adjacent Channel Power Ratio (dB)
-20
Drain Efficiency (%)
Intermodulation Distortion (dBc)
VDD = 28 V, IDQ = 900 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
5
-65
0
37
39
41
43
45
47
49
-32
50
-36
40
Efficiency
-40
ACPR Low
-44
10
ACPR Up
-52
0
36 37
51
38 39
45
Efficiency
-20
40
35
-25
30
IM3 Up
25
-35
20
-40
Gain
-45
15
Normalized Bias Voltage
-15
Gain (dB), Drain Efficiency (%)
3rd Order Intermodulation
Distortion (dBc)
50
1.03
0.2 A
1.02
0.6 A
32 33
1.0 A
1.01
1.5 A
1.00
3.0 A
0.99
4.5 A
0.98
6.0 A
7.5 A
0.97
9.0 A
0.96
0.95
-20
10
0
20
40
60
80
100
Case Temperature (°C)
Supply Voltage (V)
Data Sheet
45 46
Bias Voltage vs. Temperature
-10
28 29 30 31
43 44
Voltage normalized to typical gate voltage,
series show current
IDQ = 900 mA, ƒ = 2140 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 50 dBm
25 26 27
40 41 42
Average Output Power (dBm)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
23 24
20
-48
Output Power, PEP (dBm)
-30
30
Drain Efficiency (%)
VDD = 28 V, IDQ = 900mA, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
4 of 9
Rev. 03, 2008-03-04
PTFA211001E
RA
Broadband Circuit Impedance
RD G
ENE
MHz
R
jX
R
jX
2070
3.02
–2.80
2.64
1.47
2110
2.96
–2.32
2.57
1.84
2140
2.89
–2.01
2.51
2.10
2170
2.84
–1.66
2.44
2.34
2210
2.85
–1.20
2.40
2.70
Z Source
0.2
Z Load Ω
2070 MHz
0.1
Z Source Ω
Frequency
2210 MHz
0 .0
S
Z Load
2210 MHz
2070 MHz
0.1
VE
G
W ARD LOA D T HS T O
LE NG
Z Load
- W AV E LE NGT H
S T OW
A
Z Source
Z0 = 50 Ω
0 .1
D
See next page for circuit information
Data Sheet
5 of 9
Rev. 03, 2008-03-04
PTFA211001E
Reference Circuit
C1
0.001µF
R2
1.3KV
R1
1.2KV
QQ1
LM7805
VDD
Q1
BCP56
C2
0.001µF C3
0.001µF
R3
2KV
R4
2KV
R5
10V
C4
10 µF
35V
R8
2KV
R6
5.1KV
C5
R7
0.1µF 5.1KV
C6
1µF
C8
C7
0.01µF 10pF
C11
10pF
l6
R9
10V
RF_IN
l1
l2
C9
0.4pF
l4
VDD
C14
10µF
50V
C19
1.2pF
DUT
l3
C13
0.02µF
l8
l5
C10
10pF
C12
1µF
l7
l10
l11
l12
C21
10pF
l13
l14
l15
RF_OUT
C20
1.2pF
l9
C15
10pF
C16
1µF
C17
0.02µF
C18
10µF
50V
A 2 1 1 0 0 1 e f _ sc h
Reference circit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PTFA211001E
PCB
0.76 mm [.030”] thick, εr = 4.5
Microstrip
l1
l2
l3
l4
l5
l6
l7
l8, l9
l10
l11 (taper)
l12 (taper)
l13
l14
LDMOS Transistor
Rogers TMM4
Electrical Characteristics at 2140 MHz 1 Dimensions: L x W (mm)
0.130 λ, 52.0 Ω
9.96 x 1.30
0.235 λ, 52.0 Ω
18.01 x 1.30
0.191 λ, 39.0 Ω
14.30 x 2.08
0.018 λ, 11.5 Ω
1.22 x 10.03
0.024 λ, 64.0 Ω
1.88 x 0.89
0.261 λ, 64.0 Ω
20.32 x 0.89
0.073 λ, 7.0 Ω
4.98 x 17.68
0.170 λ, 55.0 Ω
13.08 x 1.17
0.043 λ, 5.0 Ω
2.95 x 25.40
0.059 λ, 5.0 Ω / 17.4 Ω
4.01 x 25.40 / 6.17
0.033 λ, 17.4 Ω / 42.0 Ω
2.36 x 6.17 / 1.83
0.124 λ, 42.0 Ω
9.30 x 1.83
0.381 λ, 50.0 Ω
29.11 x 1.37
2 oz. copper
Dimensions: L x W (in.)
0.392 x 0.051
0.709 x 0.051
0.563 x 0.082
0.048 x 0.395
0.074 x 0.035
0.800 x 0.035
0.196 x 0.696
0.515 x 0.046
0.116 x 1.000
0.158 x 1.000 / 0.243
0.093 x 0.243 / 0.072
0.366 x 0.072
1.146 x 0.054
1Electrical characteristics are rounded.
Data Sheet
6 of 9
Rev. 03, 2008-03-04
PTFA211001E
Reference Circuit (cont.)
R5
C5
C4
R6
R4 R3
C1
C3
+
10
35V
C9
RF_IN
R8
C11
R7
C13
C8
C12
C10
R9
C6
C14
C7
QQ1
Q1
R1
VDD
Q1
R1
R7 C6 C7
VDD
VDD
C1
LM
C2
R2
+
QQ1
LM
C2
R2
R5
C5
C4
R6
R4 R3
C3
R8
C8
C19
A211001ef_dtl
RF_OUT
C20
C15
C21
C18
C16
C17
VDD
A 2 1 1 0 0 1 e f _ a ssy
Reference circuit assembly diagram* (not to scale)
Component
Description
Suggested Manufacturer
P/N or Comment
C1, C2, C3
C4
C5
C6, C12, C16
C7
C8, C10, C11,
C15, C21
C9
C13, C17
C14, C18
C19, C20
Q1
QQ1
R1
R2
R3, R8
R4
R5, R9
R6, R7
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Capacitor, 1 µF
Capacitor, 0.01 µF
Ceramic capacitor, 10 pF
Digi-Key
Digi-Key
Digi-Key
ATC
Digi-Key
ATC
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT-ND
920C105
200B 103
100B 100
Ceramic capacitor, 0.4 pF
Capacitor, 0.02 µF
Tantalum capacitor, 10 µF, 50 V
Ceramic capacitor, 1.2 pF
Transistor
Voltage regulator
Chip resistor 1.2 k-ohms
Chip resistor 1.3 k-ohms
Chip resistor 2 k-ohms
Potentiometer, 2 k-ohms
Chip resistor 10 ohms
Chip resistor 5.1 k-ohms
ATC
Digi-Key
Gerrette Electronics
ATC
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
100B 0R4
200B203
TPS106K050R0400
100B 1R2
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P2KECT-ND
3224W-202ETR-ND
P10ECT-ND
P5.1KECT-ND
1Gerber Files for this circuit available on our Web site: www.infineon.com/rfpower
Data Sheet
7 of 9
Rev. 03, 2008-03-04
PTFA211001E
Package Outline Specifications
Package H-30248-2
(45° X 2.72
[.107])
CL
4.83±0.51
[.190±.020]
D
FLANGE 9.78
[.385]
LID 9.40+0.10
–0.15
19.43 ±0.51
[.370+.004
–.006 ]
[.765±.020]
S
CL
2X R1.63
[R.064]
G
4X R1.52
[R.060]
2X 12.70
[.500]
27.94
[1.100]
19.81±0.20
[.780±.008]
1.02
[.040]
CL
SPH 1.57
[.062]
3.61±0.38
[.142±.015]
0.0381 [.0015]
-A34.04
[1.340]
2 4 8 c-a se s
h: -3 0 2 4 8 -2 _ p o _ 9 -F -0 8
Diagram Notes:
1.
Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2.
All tolerances ± 0.127 [.005] unless specified otherwise.
3.
Pins: D = drain, S = source, G = gate.
4.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
5.
Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S - flange: 2.54 micron [100 microinch] (min)
D, G - leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
8 of 9
Rev. 03, 2008-03-04
PTFA211001E
Confidential, Limited Internal Distribution
Revision History:
2008-03-04
Previous Version:
2005-02-04, Data Sheet
Data Sheet
Page
All
Subjects (major changes since last revision)
Remove references to alternate products.
7
Correct circuit information
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Please send your proposal (including a reference to this document) to:
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GOLDMOS® is a registered trademark of Infineon Technologies AG.
Edition 2008-03-04
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2004.
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any
third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
9 of 9
Rev. 03, 2008-03-04