IRF IRKTF180-12HK

Bulletin I27100 rev. C 03/01
IRK.F180.. SERIES
MAGN-A-pak
 Power Modules
FAST THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
180 A
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 V RMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of MAGN-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are
required.
Major Ratings and Characteristics
Parameters
IRK.F180..
Units
180
A
85
°C
400
A
@ 50Hz
7130
A
@ 60Hz
7470
A
@ 50Hz
255
KA 2s
@ 60Hz
232
KA 2s
2550
KA 2√s
tq
20 and 25
µs
trr
2
µs
IT(AV)
@ TC
IT(RMS)
ITSM
2
I t
I2√t
VDRM / V RRM
up to 1200
TJ
- 40 to 125
range
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V
o
C
1
IRK.F180.. Series
Bulletin I27100 rev. C 03/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
IRK.F180-
Voltage
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/I DRM max.
Code
peak reverse voltage
repetitive peak rev. voltage
@ T J = 125°C
V
V
mA
08
800
800
12
1200
1200
50
Current Carrying Capacity
ITM
ITM
Frequency f
o
180 el
ITM
Units
100µs
180 el
o
50Hz
370
530
565
800
2400
3150
A
400Hz
435
650
670
1000
1540
2050
A
2500Hz
290
430
490
720
610
830
A
5000Hz
240
345
390
540
390
540
A
10000Hz
170
270
290
390
-
-
A
50
50
50
50
50
Recovery voltage Vr
50
Voltage before turn-on Vd
80%VDRM
80%VDRM
V
80%VDRM
V
Rise of on-state current di/dt
50
50
-
-
-
-
A/µs
Case temperature
85
60
85
60
85
60
°C
Equivalent values for RC circuit
10Ω/0.47µF
10Ω/0.47µF
10Ω/0.47µF
On-state Conduction
Parameter
IT(AV)
IRK.F180..
Units Conditions
Maximum average on-state current
180
A
@ Case temperature
85
°C
180° conduction, half sine wave
IT(RMS)
Maximum RMS current
400
A
as AC switch
ITSM
Maximum peak, one-cycle,
7130
A
t = 10ms
No voltage
non-repetitive surge current
7470
t = 8.3ms
reapplied
6000
t = 10ms
100% VRRM
6280
t = 8.3ms
reapplied
Sinusoidal half wave,
t = 10ms
No voltage
Initial TJ = 125°C
232
t = 8.3ms
reapplied
180
t = 10ms
100% VRRM
164
t = 8.3ms
reapplied
I2t
I2 √t
Maximum I2 t for fusing
Maximum I2 √t for fusing
255
2550
KA2 s
KA2√s t = 0 to 10ms, no voltage reapplied
1.30
VT(TO)2 High level value of threshold voltage
1.38
r t1
Low level value of on-state slope resistance
0.90
r t2
High level value of on-state slope resistance
0.71
VTM
Maximum on-state voltage drop
1.84
V
IH
Maximum holding current
600
mA
TJ = 25°C, IT > 30 A
IL
Typical latching current
1000
mA
TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
2
V
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
VT(TO)1 Low level value of threshold voltage
(I > π x IT(AV) ), TJ = TJ max.
mW
(16.7% x π x I T(AV) < I < π x I T(AV)), TJ = TJ max.
(I > π x IT(AV) ), TJ = TJ max.
Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
Switching
Parameter
di/dt
IRK.F180..
Maximum non-repetitive rate of rise
800
Units Conditions
A/µs
Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
T J = 25°C
trr
Maximum recovery time
tq
Maximum turn-off time
2
µs
K
J
20
25
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 750A, T J = 125°C, di/dt = -25A/µs,
µs
VR = 50V, dv/dt = 400V/µs linear to 80% V DRM
Blocking
Parameter
dv/dt
IRK.F180..
Maximum critical rate of rise of off-state
1000
Units Conditions
V/µs
TJ = 125°C., exponential to = 67% VDRM
3000
V
50 Hz, circuit to base, TJ = 25°C, t = 1 s
50
mA
voltage
VINS
RMS isolation voltage
IRRM
Maximum peak reverse and off-state
IDRM
leakage current
TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
IRK.F180..
Units Conditions
P GM
Maximum peak gate power
60
W
f = 50 Hz, d% = 50
P G(AV)
Maximum peak average gate power
10
W
TJ = 125°C, f = 50Hz, d% = 50
IGM
Maximum peak positive gate current
10
A
TJ = 125°C, tp < 5ms
- VGM
Maximum peak negative gate voltage
5
V
IGT
Max. DC gate current required to trigger
200
mA
V GT
DC gate voltage required to trigger
3
V
IGD
DC gate current not to trigger
20
mA
V GD
DC gate voltage not to trigger
0.25
V
TJ = 25°C, Vak 12V, Ra = 6
TJ = 125°C, rated VDRM applied
Thermal and Mechanical Specifications
Parameter
IRK.F180..
TJ
Max. junction operating temperature range
- 40 to 125
T stg
Max. storage temperature range
- 40 to 150
R thJC
Max. thermal resistance, junction to
Units Conditions
°C
0.125
K/W
Per junction, DC operation
0.02
K/W
Mounting surface flat and greased
case
R thC-hs Max. thermal resistance, case to
heatsink
Per module
T
Mounting torque ± 10% MAP to heatsink
wt
Approximate weight
busbar to MAP
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4 - 6 (35 - 53)
4 - 6 (35 - 53)
500 (17.8)
A mounting compound is recommended. The torque
should be rechecked after a period of 3 hours to allow
(lb*in) for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
g (oz) lubricated with a compound
Nm
3
IRK.F180.. Series
Bulletin I27100 rev. C 03/01
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
Sinusoidal conduction Rectangular conduction
180°
0.009
0.006
120°
0.010
0.011
90°
0.014
0.015
60°
0.020
0.020
30°
0.032
0.033
Units
Conditions
K/W
TJ = 125°C
Ordering Information Table
Device Code
IRK
T
F
180
1
2
3
4
-
12
H
K
5
6
7
1
- Module type
2
- Circuit configuration
3
- Fast SCR
4
- Current rating: IT(AV) x 10 rounded
5
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
6
- dv/dt code: H ≤ 400V/µs
7
- tq code: K ≤ 20µs
J ≤ 25µs
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
Outline Table
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
M a xim um A llo w a ble C ase Tem pera ture ( C )
130
IRKLF..
IRKUF..
IR K.F180.. Series
R thJC (D C ) = 0.12 5 K/W
120
110
C o n d u ctio n A n g le
100
90
30
80
60
90
120
70
180
60
0
40
80
120
160
200
IRKVF..
M ax im um Allow a ble C ase Tem pera ture ( C )
IRKHF..
IRKTF..
IRKKF..
130
IRKNF..
IR K.F1 8 0 .. Se ries
R thJC (D C ) = 0 .1 2 5 K /W
120
110
C o n d u c tio n Pe rio d
100
90
30
60
80
90
120
70
1 80
DC
60
0
50
100
150
200
250
Averag e O n -state C urren t (A )
Averag e O n-state C urren t (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
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300
5
IRK.F180.. Series
1 80
1 20
90
60
30
300
250
200
RM S Lim it
150
C ond uctio n An gle
100
IRK.F1 80 .. Series
Per Ju n ction
T J = 1 25 C
50
0
0
20
40
60
80 100 120 140 160 180
M axim um Av erag e O n-state Po w e r Loss (W )
350
450
DC
180
120
90
60
30
400
350
300
250
200 RM S Lim it
150
C on d u c tio n Pe riod
100
IRK.F18 0.. Series
Per Junction
T J = 12 5 C
50
0
0
50
200
250
300
A verag e O n-sta te C urre n t (A )
Fig. 4 - On-state Power Loss Characteristics
6500
A t A ny Rate d Loa d C o nd itio n A nd W ith
Rate d V R RM A p plie d Fo llo w ing Surg e .
In itial T J = 125 C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
6000
5500
5000
4500
4000
3500
IRK.F18 0.. S eries
Pe r Jun ctio n
3000
10
100
7500
M a xim um No n Rep etitiv e Surg e C urrent
V ers us Pulse Tra in D ura tio n . C ontro l
O f C o nduction May Not Be Maintained.
In itial T J = 125 C
N o V o lta g e R e a p p lie d
Ra te d V RR MR e a pp lie d
7000
6500
6000
5500
5000
4500
4000
3500
3000
IRK.F180.. Series
Pe r Jun ctio n
2500
0.01
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
T J = 25 C
T J = 12 5 C
IR K.F1 80.. Series
Per Ju n ctio n
100
1
2
3
4
5
6
7
In sta n ta n e o us O n -sta te V olta g e (V )
Fig. 7 - On-state Voltage Drop Characteristics
1
Fig. 6 - Maximum Non-Repetitive Surge Current
Transient Therm al Im pedanc e Z thJC (K/W )
10000
0.1
Pu ls e Train D uration (s)
Nu m b er O f E qu a l Am plitu d e Half C yc le C u r re nt Pu lse s (N)
Instan ta neous O n -state C urren t (A )
150
Fig. 3 - On-state Power Loss Characteristics
1
6
100
A ve ra g e O n-sta te C urre n t (A)
Pe a k H alf Sin e W av e O n-state C urre n t (A )
Pea k Ha lf Sine W a ve O n -state C urren t (A)
M axim um Ave rag e O n -state Pow er Lo ss (W )
Bulletin I27100 rev. C 03/01
1
Ste a dy Sta te V a lue:
R thJ C = 0.125 K/W
(D C O p eratio n)
0.1
0.01
IRK.F180 .. Series
Per Junctio n
0.001
0.001
0.01
0.1
1
10
100
Sq u are W a ve Pulse D ura tio n (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
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IRK.F180.. Series
320
M axim um Re verse Rec o very C urre nt - Irr (A)
M axim u m Re verse Rec ove ry C h arg e - Q rr ( C )
Bulletin I27100 rev. C 03/01
I TM = 1000 A
500 A
300 A
200 A
100 A
300
280
260
240
220
200
180
160
140
120
IRK.F 180.. Se ries
T J = 125 C
100
80
10
20
30
40
50
60
70
80
90 100
180
I TM = 1000A
5 00A
3 00A
2 00A
1 00A
160
140
120
100
80
60
IRK.F180.. Series
T J = 125 C
40
20
10
20
30
40
50
60
70
80
90 100
Ra te O f Fa ll O f Fo rw a rd C urre n t - d i/d t (A/ s)
Rate O f Fall O f Fo rw a rd C urren t - d i/dt (A/ s)
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
P eak On-state C urre nt ( A)
1E4
40 0
150
1E3
1000
50 H z
150
50 H z
1000
400
2 50 0
2 50 0
5 00 0
5 00 0
1E2
Snub b er circuit
R s = 10 ohm s
C s = 0.47 F
V D = 80% V D R M
IRK .F180.. Serie s
Sinuso id a l p ulse
T C= 85 C
tp
1E1
1E1
1E2
tp
1E4
1E4 1E1
1E1
1E3
Snub b e r circ uit
R s = 10 ohm s
C s = 0.47 F
V D = 80% V D RM
IRK .F 180.. Series
Sinusoid a l pulse
T C= 60 C
1E2
Pulse Ba sewid th ( s)
1E3
1E4
Pulse Ba sewid th ( s)
Fig. 11 - Frequency Characteristics
Pea k On -sta te C urrent (A )
1E4
50 H z
50 H z
150
1E3
1 00 0
150
40 0
400
1 00 0
2 50 0
2 50 0
5000
5 00 0
1E2
tp
1E1
1E1
IRK .F180.. Series
Tra p ezo id a l p ulse
T C = 8 5 C d i/d t 50A/ s
1E2
Snub b er circuit
R s = 10 ohm s
C s = 0.47 F
V D = 80% V D R M
1E3
tp
Snub b er circuit
R s = 10 ohm s
C s = 0.47 F
V D= 80% V D RM
IRK .F180.. Series
Tra p ezoid a l p ulse
T C = 85 C d i/d t 100A/ s
1E4
1E1
1E4 E1
Pulse Base w id th ( s)
1E2
1E3
1E4
Pulse Base w idth ( s)
Fig. 12 - Frequency Characteristics
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IRK.F180.. Series
Bulletin I27100 rev. C 03/01
P eak O n -sta te C urren t (A )
1E4
50 H z
50 H z
1 50
150
40 0
1E3
400
1 00 0
1 00 0
2 50 0
2 50 0
5 00 0
5000
1E2
tp
Snub b er circuit
R s = 10 ohm s
C s = 0.47 F
V D = 80% V D R M
IRK .F1 80.. Se rie s
Tra p ezoid a l p ulse
T C = 60 C d i/d t 50A/ s
1E1
1E1
1E2
tp
1E1
1E4
1E4 E1
1E3
Snub b e r circuit
R s = 10 ohm s
C s = 0.47 F
V D = 80% V D R M
IRK .F 180.. Series
Tra p ezoid a l p ulse
T C = 60 C d i/d t 100A/ s
1E2
1E3
1E4
Pulse Ba se w idth ( s)
Pulse Basewidth ( s)
Fig. 13 - Frequency Characteristics
1E4
10 jou les p er p u lse
5
10 jou les p er p ulse
5
1
2 .5
0 .5
1
0 .2 5
1E3
0 .5
0 .1
0 .25
0 .1
0 .0 5
0 .0 5
1E2
tp
IRK.F 180.. Series
Sinuso id a l p ulse
tp
1E1
1E1
1E2
IRK.F180.. Series
Tra p ezo id a l p ulse
d i/d t 50A / s
1E4
1E1
1E4 E1
1E3
1E2
1E3
1E4
Pulse Ba se w idth ( s)
Pulse Base w id th ( s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
Recta n g u lar g a te p u lse
a ) R eco m m en d ed lo a d lin e fo r
ra ted d i/d t : 1 0V , 1 0o hm s
b ) Reco m m en d ed lo a d line fo r
<= 3 0% ra ted d i/d t : 1 0V , 20 o h m s
(1)
(2)
(3)
(4)
PG M
PG M
PG M
PG M
=
=
=
=
8W , tp = 25m s
20W , tp = 1m s
40W , tp = 5m s
80W , tp = 2.5m s
10
(a )
Tj=25 C
1
Tj=-40 C
(b )
Tj=125 C
Instantaneo us G ate Voltage (V)
P ea k O n -state C urre n t ( A)
2 .5
(1)
(2)
(3)
(4)
VGD
IG D
0.1
0.01
IRK.F180.. Serie s
0.1
Fre que ncy Lim ite d by PG (AV)
1
10
100
Instantaneo us G ate C urre nt (A)
Fig. 15 - Gate Characteristics
8
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