DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW BC847M series NPN general purpose transistors Product specification Supersedes data of 2003 Jul 15 2004 Mar 10 Philips Semiconductors Product specification NPN general purpose transistors BC847M series FEATURES QUICK REFERENCE DATA • Leadless ultra small plastic package (1 mm × 0.6 mm × 0.5 mm) SYMBOL • Board space 1.3 × 0.9 mm • Power dissipation comparable to SOT23. APPLICATIONS PARAMETER MAX. UNIT VCEO collector-emitter voltage 45 V IC collector current (DC) 100 mA ICM peak collector current 200 mA PINNING • General purpose small signal DC PIN • Low and medium frequency AC applications • Mobile communications, digital (still) cameras, PDAs, PCMCIA cards. DESCRIPTION 1 base 2 emitter 3 collector DESCRIPTION NPN general purpose transistor in a SOT883 leadless ultra small plastic package. PNP complement: BC857M series. 3 handbook, halfpage 2 1 3 MARKING 1 2 TYPE NUMBER MARKING CODE BC847AM D4 BC847BM D5 BC847CM D6 Bottom view MAM475 Fig.1 Simplified outline (SOT883) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BC847AM BC847BM − DESCRIPTION Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm BC847CM 2004 Mar 10 2 VERSION SOT883 Philips Semiconductors Product specification NPN general purpose transistors BC847M series LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 50 V VCEO collector-emitter voltage open base − 45 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 100 mA Ptot total power dissipation note 1 − 250 mW note 2 − 430 mW Tamb ≤ 25 °C Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper stripline. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT note 1 500 K/W note 2 290 K/W in free air Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 µm copper stripline. 2. Device mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm2. 2004 Mar 10 3 Philips Semiconductors Product specification NPN general purpose transistors BC847M series CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS UNIT VCB = 30 V; IE = 0 − 15 nA − 5 µA − 100 nA BC847AM 110 220 BC847BM 200 450 emitter-base cut-off current VEB = 5 V; IC = 0 hFE DC current gain VCE = 5 V; IC = 2 mA BC847CM VCEsat MAX. VCB = 30 V; IE = 0; Tj = 150 °C collector-base cut-off current IEBO VBE MIN. base-emitter voltage collector-emitter saturation voltage 420 800 IC = 2 mA; VCE = 5 V 580 700 mV IC = 10 mA; VCE = 5 V − 770 mV IC = 10 mA; IB = 0.5 mA − 200 mV IC = 100 mA; IB = 5 mA; note 1 − 400 mV Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 1.5 pF fT transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz 100 − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − 10 dB Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Mar 10 4 Philips Semiconductors Product specification NPN general purpose transistors BC847M series GRAPHICAL INFORMATION BC847AM MHC646 400 MHC647 1200 VBE handbook, halfpage handbook, halfpage hFE (mV) (1) 1000 300 (1) 800 (2) 200 (2) 600 (3) 100 (3) 400 0 10−1 1 102 10 IC (mA) 200 10−1 103 1 10 102 IC (mA) 103 VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.3 Fig.2 DC current gain; typical values. MHC648 104 handbook, halfpage Base-emitter voltage as a function of collector current; typical values. MHC649 1200 handbook, halfpage VBEsat VCEsat (mV) (mV) 1000 (1) 103 (2) 800 (3) 600 (1) 102 (2) (3) 10 10−1 1 10 400 102 IC (mA) 200 10−1 103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 5 1 10 102 IC (mA) 103 Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN general purpose transistors BC847M series GRAPHICAL INFORMATION BC847BM MHC642 600 MHC643 1200 handbook, halfpage handbook, halfpage hFE VBE (mV) (1) 1000 400 (1) 800 (2) (2) 600 200 (3) (3) 0 10−1 1 400 102 10 IC (mA) 200 10−2 103 10−1 1 10 102 103 IC (mA) VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.7 Fig.6 DC current gain; typical values. MHC644 104 handbook, halfpage Base-emitter voltage as a function of collector current; typical values. MHC645 1200 handbook, halfpage VBEsat (mV) VCEsat (mV) 1000 (1) 103 (2) 800 (3) 600 102 (1) (2) (3) 10 10−1 1 10 400 102 IC (mA) 200 10−1 103 IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 Collector-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 6 1 10 102 I 103 C (mA) Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification NPN general purpose transistors BC847M series GRAPHICAL INFORMATION BC847CM MHC638 1200 MHC639 1200 handbook, halfpage handbook, halfpage VBE (mV) hFE (1) (1) 800 800 (2) (2) (3) 400 400 (3) 0 10−1 1 102 10 IC (mA) 0 10−2 103 10−1 1 10 102 103 IC (mA) VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.11 Base-emitter voltage as a function of collector current; typical values. Fig.10 DC current gain; typical values. MHC640 104 handbook, halfpage MHC641 1200 handbook, halfpage VBEsat (mV) VCEsat (mV) 1000 (1) 103 (2) 800 (3) 600 102 (1) (2) (3) 10 10−1 1 10 400 102 IC (mA) 200 10−1 103 1 10 102 I 103 C (mA) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IC/IB = 10. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.12 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.13 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Mar 10 7 Philips Semiconductors Product specification NPN general purpose transistors BC847M series PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2004 Mar 10 REFERENCES IEC JEDEC JEITA SC-101 8 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Philips Semiconductors Product specification NPN general purpose transistors BC847M series DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Mar 10 9 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/02/pp10 Date of release: 2004 Mar 10 Document order number: 9397 750 12838