APTM100H35FTG-Rev2.pdf

APTM100H35FTG
Full - Bridge
MOSFET Power Module
Application
 Welding converters
 Switched Mode Power Supplies
 Uninterruptible Power Supplies
 Motor control
VBUS
Q3
Q1
VDSS = 1000V
RDSon = 350m typ @ Tj = 25°C
ID = 22A @ Tc = 25°C
G3
G1
S1
OUT1
S3
OUT2
Q4
Q2
G2
G4
S2
S4
NTC1
0/VBU S
NTC2
Features
 Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
 Kelvin source for easy drive
 Very low stray inductance
- Symmetrical design
- Lead frames for power connections
 Internal thermistor for temperature monitoring
 High level of integration
Benefits
 Outstanding performance at high frequency operation
 Direct mounting to heatsink (isolated package)
 Low junction to case thermal resistance
 Solderable terminals both for power and signal for
easy PCB mounting
 Low profile
 RoHS Compliant
Absolute maximum ratings
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
22
17
88
±30
420
390
25
50
3000
Unit
V
A
V
m
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–
APTM100H35FTG– Rev 2 October, 2012
Symbol
VDSS
APTM100H35FTG
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 1000V
Tj = 25°C
VGS = 0V,VDS = 800V
Tj = 125°C
VGS = 10V, ID = 11A
VGS = VDS, ID = 2.5mA
VGS = ±30V, VDS = 0V
Typ
350
3
Max
100
500
420
5
±100
Unit
Max
Unit
µA
m
V
nA
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
VGS = 10V
VBus = 500V
ID = 22A
Td(on)
Tr
Td(off)
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Min
Typ
5.2
0.88
0.16
nF
186
nC
24
122
18
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5
12
ns
155
40
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
900
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
1423
µJ
623
µJ
779
Source - Drain diode ratings and characteristics
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Min
Typ
Tj = 25°C
Max
22
17
1.3
18
320
Tj = 125°C
650
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 22A
IS = - 22A
VR = 670V
diS/dt = 100A/µs
Tj = 25°C
3.6
Tj = 125°C
9.72
Unit
A
V
V/ns
ns
µC
 dv/dt numbers reflect the limitations of the circuit rather than the device itself.
di/dt  700A/µs
VR  VDSS
Tj  150°C
IS  - 22A
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2–
APTM100H35FTG– Rev 2 October, 2012
Symbol Characteristic
IS
Continuous Source current
(Body diode)
VSD
Diode Forward Voltage
dv/dt Peak Diode Recovery 
APTM100H35FTG
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Characteristic
Junction to Case Thermal Resistance
Min
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
4000
-40
-40
-40
2.5
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
M5
Typ
Max
0.32
150
125
100
4.7
160
Unit
°C/W
V
°C
N.m
g
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.15 K
RT 
Min
Typ
50
3952
Max
Unit
k
K
R25
T: Thermistor temperature

 1
1  RT: Thermistor value at T
exp  B25 / 85 
 
 T25 T 

See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com
www.microsemi.com
3–
APTM100H35FTG– Rev 2 October, 2012
SP4 Package outline (dimensions in mm)
APTM100H35FTG
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
VGS=15, 10&8V
50
7V
40
6.5V
30
6V
20
5.5V
10
0
5
10
15
20
25
60
50
40
30
TJ=25°C
20
10
5V
0
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
70
ID, Drain Current (A)
TJ=125°C
30
0
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
1.2
VGS=10V
VGS=20V
1
3
4
5
6
7
8
9
25
Normalized to
VGS=10V @ 11A
1.1
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
1.4
TJ=-55°C
0
0.9
0.8
20
15
10
5
0
0
10
20
30
40
50
60
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
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4–
APTM100H35FTG– Rev 2 October, 2012
ID, Drain Current (A)
60
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS=10V
ID=11A
2.0
1.5
1.0
0.5
0.0
-50 -25
TJ, Junction Temperature (°C)
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
limited by RDSon
1.1
ID, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
100
1.2
1.0
0.9
0.8
0.7
0.6
1ms
10
Single pulse
TJ=150°C
TC=25°C
10ms
1
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
10000
Ciss
Coss
1000
Crss
100
0
10
20
30
40
50
VDS, Drain to Source Voltage (V)
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10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
14
ID=22A
TJ=25°C
12
VDS=200V
VDS=500V
10
VDS=800V
8
6
4
2
0
0
50
100
150
200
250
Gate Charge (nC)
5–
APTM100H35FTG– Rev 2 October, 2012
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100H35FTG
APTM100H35FTG
Delay Times vs Current
Rise and Fall times vs Current
80
180
td(off)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
70
140
60
120
tr and tf (ns)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
100
80
60
40
50
40
tr
30
20
td(on)
10
20
0
0
0
10
20
30
40
50
0
10
ID, Drain Current (A)
50
4
Eon
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
2
1.5
Switching Energy (mJ)
Switching Energy (mJ)
20
30
40
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2.5
Eoff
1
0.5
0
VDS=670V
ID=22A
TJ=125°C
L=100µH
3.5
3
2.5
Eoff
2
Eon
1.5
Eoff
1
0.5
0
0
10
20
30
40
50
0
ID, Drain Current (A)
5
10
15
20
25
30
35
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
IDR, Reverse Drain Current (A)
1000
250
225
200
Frequency (kHz)
tf
ZVS
175
150
125
100
75
ZCS
VDS=670V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
50
25
0
5
8
Hard
switching
10
13
15
18
ID, Drain Current (A)
20
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100
TJ=150°C
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
6–
APTM100H35FTG– Rev 2 October, 2012
td(on) and td(off) (ns)
160
APTM100H35FTG
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Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
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faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.
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7–
APTM100H35FTG– Rev 2 October, 2012
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
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