2SA2070 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications DC-DC Converter Applications Unit: mm • High DC current gain: hFE = 200 to 500 (IC = -0.1 A) • Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) • High-speed switching: tf = 70 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −7 V DC IC −1.0 Pulse ICP −2.0 IB −0.1 Collector current Base current DC Collector power dissipation t = 10 s Junction temperature Storage temperature range PC (Note) 1.0 2.0 A A W JEDEC ― Tj 150 °C JEITA SC-62 Tstg −55 to 150 °C TOSHIBA 2-5K1A Note: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 2 645 mm ) Weight: 0.05 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = −50 V, IE = 0 ― ― −100 nA Emitter cut-off current IEBO VEB = −7 V, IC = 0 ― ― −100 nA V (BR) CEO IC = −10 mA, IB = 0 −50 ― ― V hFE (1) VCE = −2 V, IC = −0.1 A 200 ― 500 hFE (2) VCE = −2 V, IC = −0.3 A 125 ― ― Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage VCE (sat) IC = −0.3 A, IB = −0.01 mA ― ― −0.20 Base-emitter saturation voltage VBE (sat) IC = −0.3 A, IB = −0.01 mA ― ― −1.10 V VCB = −10 V, IE = 0, f = 1 MHz ― 8 ― pF ― 60 ― ― 280 ― ― 70 ― Collector output capacitance Rise time Switching time Storage time Fall time Cob tr tstg tf See Figure 1. VCC ≈ −30 V, RL = 100 Ω IB1 = −IB2 = −10 mA 1 V ns 2004-07-07 2SA2070 Marking IB2 Input IB1 IB1 Part No. (or abbreviation code) RL VCC 20 µs 4 Output IB2 Lot No. Duty cycle < 1% Figure 1 C A line indicates lead (Pb)-free package or lead (Pb)-free finish. Switching Time Test Circuit & Timing Chart 2 2004-07-07 2SA2070 IC − VCE −1 hFE − IC −50 −40 3000 Common emitter VCE = −2 V Single nonrepetitive pulse −30 −0.8 hFE −20 −15 −10 −0.6 DC current gain IC (A) −100 Collector current 5000 −5 −0.4 −2 IB = −1mA −0.2 −0.2 −0.4 −0.8 −0.6 Collector-emitter voltage −1 VCE Ta = 100°C 300 25 −55 100 30 Common emitter Ta = 25°C Single nonrepetitive pulse 0 −0 0 1000 10 −0.001 −1.2 −0.003 −0.01 (V) −0. 1 −0.3 −1 Collector current IC (A) VCE (sat) − IC VBE (sat) − IC −10 −5 −3 Common emitter IC/IB = 30 Single nonrepetitive pulse Common emitter Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) −0.03 −1 −0.3 −0.1 Ta = 100°C −0.03 25 −0.01 −0.001 −55 −0.03 25 −1 Ta = 100°C −0.3 −0.1 −55 −0.03 −0.001 −0.003 −0.01 IC/IB = 30 Single nonrepetitive pulse −3 −0. 1 −0.3 −1 −0.003 −0.01 −0.03 −0.1 −0.3 −1 Collector current IC (A) Collector current IC (A) IC – VBE Collector current IC (A) −1 −0.8 Common emitter VCE = −2 V Single nonrepetitive pulse −0.6 −0.4 Ta = 100°C 25 −0.2 0 0 −0.2 −0.4 −0.6 Base-emitter voltage −0.8 VBE −55 −1.0 −1.2 (V) 3 2004-07-07 2SA2070 rth – tw Transient thermal resistance rth (j-a) (°C/W) 1000 100 10 Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted an on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 1 0.001 2 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe Operating Area −3 −1 IC max (pulsed)* IC max (continuous) 10 ms* 1 ms* 100 µs* 10 µs* 10 s* DC operation (Ta = 25°C) −0.3 100 ms* *: Single nonrepetitive pulse Ta = 25°C −0.1 Note that the curves for 100 ms, 10 s and DC operation will be different when the devices aren’t mounted on an FR4 board (glass −0.03 epoxy, 1.6 mm thick, Cu area: 645 mm2). These characteristic curves must be derated linearly with increase in temperature. −0.01 −0.1 −0.3 −1 −3 Collector-emitter voltage VCEO max Collector current IC (A) −10 −10 VCE −30 −100 (V) 4 2004-07-07 2SA2070 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07